DESCRIPTION Silicon planar PNPN switch in a SOT143B plastic package. It is an integrated PNP/NPN transistor pair, with all electrodes accessible. APPL

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1 DISCRETE SEMICONDUCTORS DATA SHEET M3D071 Supersedes data of 1997 Jul Apr 22

2 DESCRIPTION Silicon planar PNPN switch in a SOT143B plastic package. It is an integrated PNP/NPN transistor pair, with all electrodes accessible. APPLICATIONS Switching applications. PINNING PIN 1 anode gate 2 anode 3 cathode 4 cathode gate DESCRIPTION MARKING handbook, 2 columns 4 3 TYPE NUMBER MARKING CODE a ag A kg k MBB068 Top view MSB014 Fig.1 Simplified outline (SOT143B) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT NPN transistor V CBO collector-base voltage open emitter 70 V V CER collector-emitter voltage R BE =10kΩ 70 V V EBO emitter-base voltage open collector 5 V I C collector current (DC) note ma I CM peak collector current note ma I E emitter current (DC) 175 ma I ERM repetitive peak emitter current t p =10µs; δ = A PNP transistor V CBO collector-base voltage open emitter 70 V V CEO collector-emitter voltage open base 70 V V EBO emitter-base voltage open collector 70 V I E emitter current (DC) 175 ma I ERM repetitive peak emitter current t p =10µs; δ = A 1999 Apr 22 2

3 SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Combined device P tot total power dissipation T amb 25 C 250 mw T stg storage temperature C T j junction temperature 150 C T amb operating ambient temperature see Fig C Notes 1. Provided the I E rating is not exceeded. 2. During switching on, the device can withstand the discharge of a capacitor of a maximum value of 500 pf. This capacitor is charged when the transistor is in cut-off condition, with a collector supply voltage of 160 V and a series resistance of 100 kω. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-a thermal resistance from junction to ambient in free air 500 K/W CHARACTERISTICS T amb =25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT NPN transistor I CER collector cut-off current V CE =70V; R BE =10kΩ 100 na V CE =70V; R BE =10kΩ; T j = 150 C 10 µa I EBO emitter cut-off current I C = 0; V EB =5V; T j = 150 C 10 µa V CEsat collector-emitter saturation voltage I C = 10 ma; I B =1mA 500 mv V BEsat base-emitter saturation voltage I C = 10 ma; I B =1mA 900 mv h FE DC current gain I C = 10 ma; V CE =2V 50 f T transition frequency I C = 10 ma; V CE = 2 V; f = 100 MHz 100 MHz C c collector capacitance I E =i e = 0; V CB = 20 V; f = 1 MHz 5 pf C e emitter capacitance I C =i c = 0; V EB = 1 V; f = 1 MHz 25 pf PNP transistor I CEO collector cut-off current I B = 0; V CE = 70 V; T j = 150 C 10 µa I EBO emitter cut-off current I C = 0; V EB = 70 V; T j = 150 C 10 µa h FE DC current gain I E = 1 ma; V CB = 5 V 3 15 Combined device V AK forward on-state voltage R KG-K =10kΩ I A = 50 ma; I AG =0 1.4 V I A = 50 ma; I AG = 0; T j = 55 C 1.9 V I A = 1 ma; I AG =10mA 1.2 V I H holding current R KG-K =10kΩ;I AG = 10 ma; V BB = 2 V; (see Fig.5) 1 ma 1999 Apr 22 3

4 SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Switching times t on turn-on time V KG-K = 0.5 to 4.5 V; R KG-K =1kΩ; see Figs 6 and µs V KG-K = 0.5 to 0.5 V; R KG-K =10kΩ 1.5 µs t off turn-off time R KG-K =10kΩ; see Figs 8 and 9 15 µs a (anode) (e ) 2 e 2 PNP transistor kg (cathode gate) (b 1,c 2) ag (anode gate) (c 1,b 2) NPN transistor b,c 1 2 P N P N P N MBB681 c,b 1 2 e 1 k (cathode) (e ) 1 MBB680 Fig.2 Two transistor equivalent circuit. Fig.3 PNPN silicon controlled switch structure Apr 22 4

5 kg I KG I A a I AG I K k ag V AK V BB I A a R KG-K kg I AG ag DUT k MBB683 MBB682 Fig.4 symbol. Fig.5 Equivalent test circuit for holding current. V i (V) MBB V 2.7 kω R KG-K 16 kω V AK +50 V % 90 % time V I V AG-K MBB685 t on time Fig.6 Test circuit for turn-on time. Fig.7 Pulse duration increased until dashed curve disappears Apr 22 5

6 handbook, V AK halfpage (V) MBB V +50 V 1 kω 2.7 kω 16 kω C 12 C = C opt V AK mercury wetted contact R KG-K 0 t q C < C opt time MBB Fig.8 Test circuit for turn-off time. Fig.9 Capacitance increased until C = C opt dashed curve disappears. 1.2 MBB MBB583 h FE X V AG-K = 5 V h FE X V I 100 AG (ma) T amb ( o C) X is the value of h FE at I C = 10 ma; V AG-K = 2 V; T amb =25 C. X is the value of h FE at I AG = 10 ma; V AG-K = 2 V; T amb =25 C. Fig.10 Normalized DC current gain as a function of anode gate current. Fig.11 Normalized DC current gain as a function of ambient temperature Apr 22 6

7 1.2 MBB I H X MBB587 V AK X T amb ( C) T amb ( o C) X is the value of V AK at I C = 10 ma; I AG = 10 ma; I A = 1 ma; V BB = 2 V; R KG-K =10kΩ; T amb =25 C. X is the value of I H at I C = 10 ma; I AG = 10 ma; V BB = 2 V; R kg-k =10kΩ; T amb =25 C. Fig.12 Normalized anode-cathode voltage as a function of ambient temperature. Fig.13 Normalized holding current as a function of ambient temperature. 300 MBB580 Ptot (mw) T amb ( o C) Fig.14 Power derating curve Apr 22 7

8 PACKAGE OUTLINE Plastic surface mounted package; 4 leads SOT143B D B E A X y v M A H E e b p w M B 4 3 Q A A1 1 2 c b 1 Lp e1 detail X mm scale DIMENSIONS (mm are the original dimensions) UNIT mm A A 1 max 0.1 b p b c D E e 1.9 e H E L p Q v 0.2 w y OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT143B Apr 22 8

9 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale Apr 22 9

10 NOTES 1999 Apr 22 10

11 NOTES 1999 Apr 22 11

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