DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-a, AB or B operated mobile, industrial and military transmitters in th

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1 DISCRETE SEMICONDUCTORS DATA SHEET August 1986

2 DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-a, AB or B operated mobile, industrial and military transmitters in the h.f. and v.h.f. bands. It is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. It has a 1 2 " flange envelope with a ceramic cap. All leads are isolated from the flange. QUICK REFERENCE DATA R.F. performance up to T h =25 C MODE OF OPERATION V CE V I C I C(ZS) A f MHz c.w. (class-b) > 6 > 7 s.s.b. (class-a) (P.E.P.) typ. 19,5 typ. 4 s.s.b. (class-ab) 28, (P.E.P.) typ. 19, typ. 42 typ. 3 Note 1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones. Relative to the according peak envelope powers these figures should be increased by 6 db. P L W G p db η % d 3 (1) db PIN CONFIGURATION 4 3 PINNING - SOT121B. PIN DESCRIPTION 1 collector 2 emitter 3 base 4 emitter 1 2 MLA876 Fig.1 Simplified outline. SOT121B. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. August

3 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (V BE =) peak value V CESM max. 7 V Collector-emitter voltage (open base) V CEO max. 35 V Emitter-base voltage (open collector) V EBO max. 4 V Collector current (average) I C(AV) max. 1 A Collector current (peak value); f > 1 MHz I CM max. 25 A R.F. power dissipation (f > 1 MHz); T mb =25 C P rf max. 16 W Storage temperature T stg 65 to +15 C Operating junction temperature T j max. 2 C 1 2 MGP543 2 MGP544 I C (A) P rf (W) 15 ΙΙΙ 1 ΙΙ derate by.79 W/K T h = 7 C T mb = 25 C 1 Ι derate by.61 W/K V CE (V) 5 5 T 1 h ( C) I Continuous d.c. operation II Continuous r.f. operation III Short-time operation during mismatch Fig.2 D.C. SOAR. Fig.3 R.F. power dissipation; V CE 28 V; f > 1 MHz. THERMAL RESISTANCE (dissipation = 8 W; T mb =86 C; i.e. T h =7 C) From junction to mounting base (d.c. dissipation) R th j-mb(dc) = 1,45 K/W From junction to mounting base (r.f. dissipation) R th j-mb(rf) = 1,6 K/W From mounting base to heatsink R th mb-h =,2 K/W August

4 CHARACTERISTICS T j =25 C Collector-emitter breakdown voltage V BE =;I C =5mA V (BR)CES > 7 V Collector-emitter breakdown voltage open base; I C = 1 ma V (BR)CEO > 35 V Emitter-base breakdown voltage open collector; I E = 5 ma V (BR)EBO > 4 V Collector cut-off current V BE = ; V CE =35V I CES < 5 ma D.C. current gain (1) I C = 5 A; V CE =5V h FE 2 to 85 Collector-emitter saturation voltage I C = 15 A; I B =3 A V CEsat typ. 2 V Transition frequency at f = 1 MHz (2) I E = 5 A; V CB =28V f T typ. 37 MHz I E = 15 A; V CB =28V f T typ. 35 MHz Collector capacitance at f = 1 MHz I E =I e = ; V CB =28V C c typ. 155 pf Feedback capacitance at f = 1MHz I C = 1 ma; V CE =28V C re typ. 12 pf Collector-flange capacitance C cf typ. 3 pf Notes 1. Measured under pulse conditions: t p 3 µs; δ,2. 2. Measured under pulse conditions: t p 5 µs; δ,1. August

5 75 MGP545 6 MGP546 h FE V CE = 28 V C c (pf) 5 5 V typ 5 1 I C (A) 2 V 4 CB (V) Fig.4 Typical values; T j =25 C. Fig.5 I E = I e = ; f = 1 MHz; T j =25 C. 75 handbook, full pagewidth MGP547 f T (MHz) 5 V CB = 28 V 2 V I E (A) 25 Fig.6 Typical values; f = 1 MHz; T j =25 C. August

6 APPLICATION INFORMATION R.F. performance in c.w. operation (unneutralized common-emitter class-b circuit); T h =25 C f (MHz) V CE (V) P L (W) P D (W) η (%) z i (Ω) Z L (Ω) ,74 + j1,35 4,3 + j,6 handbook, full pagewidth 5 Ω C1 C2 L1 L2 L3 T.U.T. C3 C4 C5 L4 L5 C8 C7 5 Ω C6 +V CC MGP548 Fig.7 Test circuit; c.w. class-b; f = 15 MHz. List of components: C1 = C2 = C7 = C8 = 5 to 1 pf film dielectric trimmer C3 = 23 pf; 2 82 pf and 39 pf multilayer ceramic chip capacitors (5 V, ATC (1) ) in parallel C4 = 39 pf multilayer ceramic chip capacitor (5 V, ATC (1) ) C5 = 1 nf feed-through capacitor C6 = 1 nf polyester capacitor L1 = strip (3 mm 8 mm); bent to form inverted U shape with top 15 mm above heatsink, and bottom 5 mm above heatsink L2 = 1 µh r.f. choke L3 = strip; shape as shown in Fig.8; 5 mm above heatsink L4 = strip (4 mm 8 mm); bent in form, 25 mm at 15 mm above heatsink, 5 mm at 5 mm above heatsink L5 = strip (75 mm long; width 8 mm); 5 mm above base L1, L3, L4, and L5 are copper strips with a thickness of,6 mm. Heatsink: aluminium;,9 K/W At P L = 1 W and V CE = 28 V, the output power at heatsink temperatures between 25 C and 9 C relative to that at 25 C is diminished by typ.,12 W/K. Component layout on an aluminium heatsink for 15 MHz test circuit is shown in Fig.8. Note 1. ATC means American Technical Ceramics. August

7 handbook, full pagewidth C5 L4 C2 L2 C4 output 5 Ω L5 C1 L1 L3 C8 input 5 Ω C3 C7 aluminium heatsink MGP549 Fig.8 Component layout on an aluminium heatsink for 15 MHz test circuit. Earthing bolts. August

8 15 MGP55 1 MGP551 1 P L (W) G p (db) η η (%) 1 typ G p P 4 S (W) 5 1 P 15 L (W) Fig.9 V CE = 28 V; f = 15 MHz; T h =25 C. Fig.1 V CE = 28 V; f = 15 MHz; T h =25 C; typical values. 15 P Lnom (W) (VSWR = 1) MGP552 1 T h 7 C 5 9 C VSWR The graph shows the permissible output power under nominal conditions (VSWR = 1) as a function of the expected VSWR during short-time mismatch conditions with heatsink temperatures as parameter. Fig.11 R.F. SOAR; c.w. class-b operation; f = 15 MHz; V CE =28V; R th mb-h =,2 K/W. August

9 OPERATING NOTE Below 5 MHz a base-emitter resistor of 4,7 Ω is recommended to avoid oscillation. This resistor must be effective for r.f. only. 3 r i, x i (Ω) 2 x i MGP553 1 r i r i x i f (MHz) V CE = 28 V; P L = 1 W; T h =25 C; typical values; class-b operation. Fig.12 Input impedance (series components). 6 MGP554 3 MGP555 R L, X L (Ω) G p (db) 4 R L typ X L 1 2 f (MHz) V CE = 28 V; P L = 1 W; T h =25 C; typical values; class-b operation. 1 f (MHz) 2 V CE = 28 V; P L = 1 W; T h =25 C; typical values; class-b operation. Fig.13 Load impedance (series components). Fig.14 August

10 R.F. performance in s.s.b. class-a operation V CE =26V; T h =4 C; f 1 = 28, MHz; f 2 = 28,1 MHz OUTPUT POWER W G p db I C d 3 A db 35 (P.E.P.) typ. 19,5 3 typ. 4 handbook, full pagewidth C1 5 Ω C1 C2 L1 L2 T.U.T. L5 C11 5 Ω R5 L3 L4 C8 C12 C13 C3 C4 R3 C5 R7 R2 R4 +V CC BY26 R6 C6 C9 BD136 C7 C14 R1 R8 MGP556 Fig.15 Test circuit; s.s.b. class-a; f = 28 MHz. August

11 List of components: C1 = 33 pf ceramic capacitor (5 V) C2 = 1 pf air dielectric trimmer (single insulated rotor type) C3 = 28 pf air dielectric trimmer (single non-insulated rotor type) C4 = 18 pf polystyrene capacitor C5 = C6 = C7 = 3,9 nf ceramic capacitor C8 = 2 33 pf ceramic capacitors in parallel (5 V) C9 = 33 nf polyester capacitor C1 = 82 pf ceramic capacitor (5 V) C11 = 1 pf air dielectric trimmer (single insulated rotor type) C12 = 18 pf air dielectric trimmer (single non-insulated rotor type) C13 = 15 pf polystyrene capacitor C14 = 39 nf polyester capacitor L1 = 72 nh; 3 turns Cu wire (1, mm); int. dia. 7 mm; length 4,8 mm; leads 2 5 mm L2 = Cu strip (28 mm 5mm,2 mm); 18 mm at 3 mm above printed-circuit board L3 = Ferroxcube choke coil (cat. no ) L4 = 3 nh; 6 turns Cu wire (1,5 mm); int. dia. 12 mm; length 16 mm; leads 2 5 mm L5 = 33 nh; 7 turns Cu wire (1,5 mm); int. dia. 12 mm; length 2,8 mm; leads 2 5 mm R1 = 1,5 kω (± 5%) carbon resistor (,5 W) R2 = 1 Ω (± 5%) carbon resistor (,5 W) R3 = 68 Ω (± 5%) carbon resistor (,5 W) R4 = 1 Ω wirewound potentiometer R5 = 33 Ω (± 5%) carbon resistor (,5 W) R6 =,68 Ω (± 1%) wirewound resistor (7 W) R7 = 12 Ω wirewound resistor (8 W) R8 = 1 Ω (± 1%) carbon resistor (,5 W) August

12 3 MGP557 d 3 (db) 4 typ P.E.P. (W) 5 Fig.16 Intermodulation distortion as a function of output power; V CE = 26 V; I C =3A; f 1 = 28, MHz; f 2 = 28,1 MHz; T h =4 C. August

13 R.F. performance in s.s.b. class-ab operation (linear power amplifier) V CE = 28 V; T h =25 C; f 1 = 28, MHz; f 2 = 28,1 MHz OUTPUT POWER G p η dt I C d (1) 3 d (1) 5 I C(ZS) W db % A db db ma 1 (P.E.P.) typ. 19 typ. 42 typ. 4,3 typ. 3 typ Note 1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones. Relative to the according peak envelope powers these figures should be increased by 6 db. handbook, full pagewidth C1 5 Ω C1 C2 L1 T.U.T. L3 C11 5 Ω C3 C4 L2 R1 C7 L4 C12 C13 C5 C8 temperature compensated bias (R i <.1 Ω) C6 C9 R2 +V CC MGP558 Fig.17 Test circuit; s.s.b. class-ab; f = 28 MHz. List of components: C1 = C11 = 15 pf air dielectric trimmer (single insulated rotor type) C2 = 27 pf ceramic capacitor (5 V) C3 = C12 = 15 pf air dielectric trimmer (single non-insulated rotor type) C4 = 18 pf ceramic capacitor (5 V) C5 = C8 = 3,9 nf ceramic capacitor C6 = 15 µf/6 V solid tantalum capacitor C7 = 15 pf ceramic capacitor (5 V) C9 = 1 nf polyester capacitor C1 = 75 pf mica dielectric trimmer (single insulated rotor type) C13 = 75 pf mica dielectric trimmer (single non-insulated rotor type) L1 = 3 turns enamelled Cu wire (1, mm); int. dia. 12 mm; length 12 mm L2 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no ) L3 = 3 turns enamelled Cu wire (2, mm); int. dia. 12 mm; length 12 mm L4 = 2 turns enamelled Cu wire (2, mm); int. dia. 12 mm; length 8 mm R1 = 27 Ω (± 1%) carbon resistor (,5 W) R2 = 4,7 Ω (± 1%) carbon resistor (,5 W) August

14 2 MGP559 d 3, d 5 (db) 3 d 3 4 d P.E.P. (W) 1 Typical values; V CE = 28 V; I C(ZS) = 5 ma; f 1 = 28, MHz; f 2 = 28,1 MHz; T h =25 C. Fig.18 Intermodulation distortion (1) as a function of output power. 1 MGP561 3 MGP56 r i (Ω) x i x i (Ω) G p (db) r i f (MHz) 2 V CE = 28 V; I C(ZS) = 5 ma; P L = 1 W (P.E.P.); T h =25 C; Z L = 2,7 Ω f (MHz) 2 V CE = 28 V; I C(ZS) = 5 ma; P L = 1 W (P.E.P.); T h =25 C; Z L = 2,7 Ω. Fig.2 Input impedance (series components). Fig.19 Power gain as a function of frequency. Figs 19 and 2 are typical curves and hold for an unneutralized amplifier in s.s.b. class-ab operation. August

15 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads SOT121B D A F q U 1 C B H c L b α 4 3 w 2 M A C p U 2 D 1 U 3 w 1 M A B 1 2 H Q 5 1 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) scale UNIT A b c D D 1 F H L p Q q U 1 U 2 U 3 w 1 w 2 α mm inches OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT121B August

16 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August

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