DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in class-a, AB and B operated, industrial and military transmitters i

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1 DISCRETE SEMICONDUCTORS DATA SHEET August 1986

2 DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in class-a, AB and B operated, industrial and military transmitters in the h.f. and v.h.f. band. Resistance stabilization provides protection against device damage at severe load mismatch conditions. Matched h FE groups are available on request. It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange. QUICK REFERENCE DATA R.F. performance MODE OF OPERATION V CE f P L G p η dt I C I C(ZS) d 3 T h V MHz W db % A ma db C s.s.b. (class-a) 45 1, (P.E.P.) > 19,5 1,2 < 4 7 s.s.b. (class-ab) 5 1, (P.E.P.) typ. 18 typ. 45 (1) 1,45 5 typ Note 1. At 65W P.E.P. PIN CONFIGURATION PINNING - SOT123 alfpage 1 4 b c PIN DESCRIPTION 1 collector 2 emitter 3 base 4 emitter MBB12 e 2 3 MSB57 Fig.1 Simplified outline and symbol. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. August

3 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (V BE = ) peak value V CESM max. 11 V Collector-emitter voltage (open base) V CEO max. 55 V Emitter-base voltage (open collector) V EBO max. 4 V Collector current (average) I C(AV) max. 2,5 A Collector current (peak value); f > 1 MHz I CM max. 7,5 A D.C. and r.f. (f > 1 MHz) power dissipation; T mb = 25 C P tot ;P rf max. 94 W Storage temperature T stg 65 to + 15 C Operating junction temperature T j max. 2 C 1 MGP MGP467 I C (A) T mb = 25 C P rf (W) 1 1 T h = 7 C ΙΙ 5 Ι V CE (V) 5 T h ( C) 1 I Continuous d.c. and r.f. operation II Short-time operation during mismatch Fig.2 D.C. SOAR. Fig.3 Power derating curves vs. temperature. THERMAL RESISTANCE (dissipation = 54 W; T mb =86 C, i.e. T h =7 C) From junction to mounting base (d.c. and r.f. dissipation) R th j-mb = 2,1 K/W From mounting base to heatsink R th mb-h =,3 K/W August

4 CHARACTERISTICS T j =25 C Collector-emitter breakdown voltage V BE = ; I C = 25 ma V (BR) CES > 11 V Collector-emitter breakdown voltage open base; I C = 1 ma V (BR) CEO > 55 V Emitter-base breakdown voltage open collector; I E = 1 ma V (BR)EBO > 4 V Collector cut-off current V BE = ; V CE = 55 V I CES < 1 ma Second breakdown energy; L = 25 mh; f = 5 Hz open base E SBO > 8 mj R BE =1Ω E SBR > 8 mj D.C. current gain (1) typ. 25 I C = 1,2 A; V CE =5 V h FE 15 to 1 D.C. current gain ratio of matched devices (1) I C = 1,2 A; V CE =5 V h FE1 /h FE2 < 1,2 Collector-emitter saturation voltage (1) I C = 3, A; I B =,6 A V CEsat typ. 1,2 V Transition frequency at f = 1 MHz (1) I E = 1,2 A; V CB = 45 V f T typ. 49 MHz I E = 4, A; V CB = 45 V f T typ. 54 MHz Collector capacitance at f = 1 MHz I E =I e = ; V CB = 45 V C c typ. 53 pf Feedback capacitance at f = 1 MHz I C = 5 ma; V CE = 45 V C re typ. 35 pf Collector-flange capacitance C cf typ. 2 pf Note 1. Measured under pulse conditions: t p 2 µs; δ,2. August

5 1 MGP468 4 V CE = 45 V MGP469 I C (A) 1 typ h FE 3 5 V V BE (V) I 3 C (A) Fig.4 V CE = 4 V; T mb =25 C. Fig.5 Typical values; T j =25 C. 6 V CB = 45 V MGP47 3 MGP471 f T (MHz) 1 V C c (pf) typ 5 I 1 E (A) 25 V 5 CB (V) Fig.6 Typical values; f = 1 MHz; T j =25 C. Fig.7 I E =I e = ; f = 1 MHz; T j = 25 C. August

6 APPLICATION INFORMATION R.F. performance in s.s.b. class-a operation (linear power amplifier) V CE = 45 V; f 1 = 28, MHz; f 2 = 28,1 MHz OUTPUT POWER G p I C d (1) 3 d (1) 5 T h W db A db db C > 16 (P.E.P.) > 19,5 1,2 4 < 4 7 typ. 17 (P.E.P.) typ. 2,5 1,2 4 < 4 7 handbook, full pagewidth 5 Ω C1 L1 R1 C2 +V BB R2 T.U.T. L2 C5 L4 L3 C6 C8 C9 5 Ω C3 C4 C7 R3 +V CC MGP472 Fig.8 Test circuit; s.s.b. class-a. List of components in Fig.8: C1 = C2 = 1 to 78 pf film dielectric trimmer C3 = 22 nf ceramic capacitor (63 V) C4 = 4,7 µf/16 V electrolytic capacitor C5 = 1 µf/75 V solid tantalum capacitor C6 = C7 = 47 nf polyester capacitor (1 V) C8 = 68 pf ceramic capacitor (5 V) C9 = 3,9 nf ceramic capacitor L1 = 3 turns closely wound enamelled Cu wire (1, mm); int. dia 9, mm; leads 2 5 mm L2 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no ) L3 = 1,5 µh; 15 turns enamelled Cu wire (1, mm); int. dia. 1 mm; length 17,4 mm; leads 2 5 mm L4 = 162 nh; 6 turns enamelled Cu wire (1, mm); int. dia. 7, mm; length 11,6 mm; leads 2 5 mm R1 = 1,6 Ω; parallel connection of 3 4,7 Ω carbon resistors (± 5%;,125 W) R2 = 47 Ω carbon resistor (± 5%;,25 W) R3 = 4,7 Ω carbon resistor (± 5%;,25 W) Note 1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones. Relative to the according peak envelope powers these figures should be increased by 6 db. August

7 2 handbook, full pagewidth MGP473 d 3 (db) 3 I C =.8 A 1. A 1.2 A P.E.P. (W) 3 Fig.9 Intermodulation distortion (see note on previous page) as a function of output power. Typical values; V CE = 45 V; f 1 = 28, MHz; f 2 = 28,1 MHz; T h = 7 C. August

8 R.F. performance in s.s.b. class-ab operation (linear power amplifier) V CE = 5 V; f 1 = 28, MHz; f 2 = 28,1 MHz OUTPUT POWER G p η dt (%) I C (A) d 3 (1) d 5 (1) I C(ZS) T h W db AT 65 W P.E.P. db db ma C 1 to 65 (P.E.P.) typ. 18 typ. 45 typ. 1,45 typ. 3 < handbook, full pagewidth 5 Ω C1 C2 L1 R1 R2 T.U.T. L2 L3 C4 L4 C7 C9 5 Ω temperature compensated bias (R i <.1 Ω) C3 C5 C6 C8 +V CC MGP474 Fig.1 Test circuit; s.s.b. class-ab. List of components: C1 = C2 = 1 to 78 pf film dielectric trimmer C3 = C5 = C6 = 22 nf polyester capacitor C4 = 12 pf ceramic capacitor (5 V) C7 = 15 pf ceramic capacitor (5 V) C8 = 47µF/63 V electrolytic capacitor C9 = 3,9 nf ceramic capacitor L1 = 4 turns closely wound enamelled Cu wire (1,6 mm); int. dia 7, mm; leads 2 5 mm L2 = Ferroxcube wide-band h.f. choke, grade 3B (cat.no ) L3 = 9 turns enamelled Cu wire (1, mm); int. dia. 1 mm; length 14,5 mm; leads 2 5 mm L4 = 6 turns enamelled Cu wire (1, mm); int. dia. 6,5 mm; length 11, mm; leads 2 5 mm R1 = 2,4 Ω; parallel connection of 2 4,7 Ω carbon resistors R2 = 39 Ω carbon resistor Note 1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones. Relative to the according peak envelope powers these figures should be increased by 6 db. August

9 2 MGP475 5 G p MGP476 2 d 3, d 5 (db) η dt (%) G p (db) η dt 3 d d P.E.P. (W) P.E.P. (W) V CE = 5 V; I C(ZS) = 5 ma; f 1 = 28, MHz; f 2 = 28,1 MHz; T h =25 C; typical values. V CE = 5 V; I C(ZS) = 5 ma; f 1 = 28, MHz; f 2 = 28,1 MHz; T h =25 C; typical values. Fig.11 Intermodulation distortion as a function of output power (1). Fig.12 Double-tone efficiency and power gain as a function of output power. Ruggedness in s.s.b. operation The is capable of withstanding full load mismatch (VSWR = 5 through all phases) up to 45 W (P.E.P.) under the following conditions: V CE = 5 V; f 1 = 28, MHz; f 2 = 28,1 MHz; T h = 7 C; R th mb-h =,3 K/W. August

10 3 MGP477 2 MGP478 G p (db) r i, x i (Ω) 2 1 r i 1 x i f (MHz) 2 V CE = 5 V; I C(ZS) = 5 ma; P L = 6 W; T h =25 C; Z L = 16 Ω f (MHz) 2 V CE = 5 V; I C(ZS) = 5 ma; P L = 6 W; T h =25 C; Z L = 16 Ω. Fig.13 Power gain as a function of frequency. Fig.14 Input impedance (series components) as a function of frequency. Figs 13 and 14 are typical curves and hold for an unneutralized amplifier in s.s.b. class-ab operation. August

11 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads SOT123A D A F q U 1 C B H L 4 3 w 2 M b C c α A p U 2 U 3 1 w 1 M A B H 2 Q 5 1 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D 1 F H L p Q q U 1 U 2 U 3 w 1 w 2 α mm inches OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT123A August

12 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August

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