FEATURES High power gain High output voltage High maximum junction temperature Gold metallization ensures excellent reliability. DESCRIPTION Silicon N

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1 DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 995 Apr File under Discrete Semiconductors, SC4 995 Sep 6

2 FEATURES High power gain High output voltage High maximum junction temperature Gold metallization ensures excellent reliability. DESCRIPTION Silicon NPN transistor in a 4-lead dual-emitter SOT7A package with a ceramic cap. All leads are isolated from the mounting base. Emitter ballasting resistors and application of gold sandwich metallization ensures an optimum temperature profile and excellent reliability properties. APPLICATIONS It is primarily intended for use in MATV and microwave amplifiers, such as aerial amplifiers, radar systems, oscilloscopes, spectrum analyzers, etc. 4 PINNING PIN collector emitter 3 base 4 emitter DESCRIPTION 3 Top view MSA457 Fig. SOT7A. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V CEO collector-emitter voltage open base 6 V I C collector current (DC) 5 ma P tot total power dissipation up to T mb =5 C 8 W h FE DC current gain I C = ma; V CE =8V; 4 T amb =5 C f T transition frequency I C = ma; V CE =8V; 7 GHz f = GHz; T amb =5 C G UM maximum unilateral power gain I C = ma; V CE =8V; 8.5 db f = 5 MHz; T amb =5 C V O output voltage I C = ma; V CE =8V; f (p+q r) = MHz; d im = 6 db; R L =75Ω. V Product and environmental safety - toxic materials WARNING This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 995 Sep 6

3 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 34). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CBO collector-base voltage open emitter 5 V V CEO collector-emitter voltage open base 6 V V EBO emitter-base voltage open collector V I C collector current (DC) 5 ma P tot total power dissipation up to T mb =5 C 8 W T stg storage temperature C T j junction temperature + C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-mb thermal resistance from junction to mounting base P tot = 8 W; up to T mb =5 C.9 K/W 995 Sep 6 3

4 CHARACTERISTICS T j =5 C (unless otherwise specified). SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)CBO collector-base breakdown voltage I C =. ma; I E = 5 V V (BR)CEO collector-emitter breakdown voltage I C = ma; I B = 6 V V (BR)EBO emitter-base breakdown voltage I E =. ma; I C = V I CBO collector-base leakage current I E = ; V CB =8V µa h FE DC current gain I C = 5 ma; V CE =V 5 6 f T transition frequency I C = ma; V CE =8V; 7 GHz f = GHz; see Fig.3 C c collector capacitance I E =i e = ; V CB =8V;.5 pf f = MHz C e emitter capacitance I C =i c = ; V EB =.5 V; 5 pf f = MHz C re feedback capacitance I C = ; V CE = 8 V; f = MHz; see Fig pf G UM Notes maximum unilateral power gain; note I C = ma; V CE =8V; f = 5 MHz; T amb =5 C; I C = ma; V CE =8V; f = 8 MHz; T amb =5 C; 8.5 db 4.5 db V O output voltage note.35 V note 3. V d second order intermodulation note 4 6 db distortion note 5 6 db. G UM is the maximum unilateral power gain, assuming s is zero. G UM = s log ( s ) ( s ) db.. d im = 6dB (DIN454B); see Fig.; I C = ma; V CE = 8 V; R L =75Ω;T amb =5 C; V p =V O ; f p = MHz; V q =V O 6 db; f q = MHz; V r =V O 6 db; f r = MHz; measured at f (p+q r) = MHz; see Fig d im = 6dB (DIN454B); see Fig.; I C = ma; V CE = 8 V; R L =75Ω;T amb =5 C; V p =V O ; f p = MHz; V q =V O 6 db; f q = 83.5 MHz; V r =V O 6 db; f r = 85.5 MHz; measured at f (p+q r) = MHz; see Fig V O = 5 dbmv = 36 mv; I C = 9 ma; V CE = 8 V; R L =75Ω;T amb =5 C; measured at f (p+q) = 45 MHz; see Fig V O = 5 dbmv = 36 mv; I C = 9 ma; V CE = 8 V; R L =75Ω;T amb =5 C; measured at f (p+q) = 8 MHz; see Fig Sep 6 4

5 MEA6 V BB input 75 Ω L nf L4 nf L3 L6 kω 4 Ω nf L L5 DUT nf nf 4.7 µf V CC output 75 Ω pf 33 Ω 33 Ω pf MEA6 L = 8 nh. L = 5 nh, turns copper wire, internal diameter mm. L3 = nh, turns copper wire, internal diameter.5 mm. L5: Lp = mm; Rc = 75 Ω. L6: Lp = 6 mm; Rc = 75 Ω. Fig. Intermodulation distortion and second order distortion MATV test circuit. f T (GHz) 8 MLC99. Cre (pf).5 MLC I C (ma) V CB (V) V CE = 8 V; f = GHz. I C = ; f = MHz. Fig.3 Transition frequency as a function of collector current; typical values. Fig.4 Feedback capacitance as a function of collector-base voltage; typical values. 995 Sep 6 5

6 MLC99 MLC993 d im d im (db) (db) I C (ma) I C (ma) V O =.35 V; V CE = 8 V; f (p+q r) = MHz; see Fig.. V O =. V; V CE = 8 V; f (p+q r) = MHz; see Fig.. Fig.5 Intermodulation distortion as a function of collector current; typical values. Fig.6 Intermodulation distortion as a function of collector current; typical values. MLC994 MLC995 d d (db) (db) I C (ma) I C (ma) V O = 5dBmV = 36 mv; V CE = 8 V; f (p+q) = 45 MHz; see Fig.. V O = 5dBmV = 36 mv; V CE = 8 V; f (p+q) = 8 MHz; see Fig.. Fig.7 Second order distortion as a function of collector current; typical values. Fig.8 Second order distortion as a function of collector current; typical values. 995 Sep 6 6

7 9 o. 35 o GHz o..5 5 o. 4 MHz 5 35 o.5 9 o MLC996. V CE = 8 V; I C = ma; Z o =5Ω. Fig.9 Common emitter input reflection coefficient (s ); typical values. 9 o 35 o 4 MHz 8 o GHz o 35 o 9 o MLC997 V CE = 8 V; I C = ma. Fig. Common emitter forward transmission coefficient (s ); typical values. 995 Sep 6 7

8 9 o 35 o 3 GHz 8 o MHz o 35 o 9 o MLC998 V CE = 8 V; I C = ma. Fig. Common emitter reverse transmission coefficient (s ); typical values. 9 o. 35 o o GHz o 4 MHz o.5 9 o MLC999. V CE = 8 V; I C = ma; Z o =5Ω. Fig. Common emitter output reflection coefficient (s ); typical values. 995 Sep 6 8

9 SPICE parameters for the crystal SEQUENCE No. PARAMETER VALUE UNIT IS.358 fa BF. 3 NF.99 4 VAF 78.6 V 5 IKF 4.9 A 6 ISE fa 7 NE.85 8 BR NR.999 VAR.35 V IKR 5.6 ma ISC.454 fa 3 NC.75 4 RB 8. Ω 5 IRB. µa 6 RBM 8. Ω 7 RE.585 Ω 8 RC.88 Ω 9 () XTB. () EG. ev () XTI 3. CJE pf 3 VJE.6 V 4 MJE.37 5 TF 4. ps 6 XTF VTF.94 mv 8 ITF 3.84 A 9 PTF 45. deg 3 CJC.59 pf 3 VJC.6 V 3 MJC XCJC. 34 TR 9.7 ns 35 () CJS. F 36 () VJS 75. mv 37 () MJS. 38 FC.735 B Cbe L L3 L4 L B Fig.3 Package equivalent circuit SOT7A. List of components (see Fig.3) MLD DESIGNATION VALUE UNIT C be 5 ff C cb 36 ff C ce 36 ff L () L =.37; W =.64 mm L () L =.6; W =.64 mm L3 () L =.5; W =.33 mm L4 () L =.8; W =.6 mm L5 () L =.77; W =.33 mm L6 () L =.94; W =.6 mm L B.85 nh L E. nh Note. The micro striplines are on a double copper-clad substrate; ε r = 6.5; h =.8 mm. B' Ccb E' E C' L E L L5 L6 Cce C Note. These parameters have not been extracted, the default values are shown. 995 Sep 6 9

10 PACKAGE OUTLINE (x) min (4x) UNC max 5.35 max 9 o 6.9 min (x) max MBC866 Dimensions in mm. Fig.4 SOT7A. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 34). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 995 Sep 6

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