國立中山大學學位論文典藏.PDF

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1 InGaAsP Planarized InGaAsP Semiconductor Lasers for Giga-bit Applications 1

2 1

3 1.3µm SiO 2 (Benzocyclobutene, BCB) BCB SiO 2 SiO 2 laser die 500µm 300µm mount submound 34mA 1.31V 10.1Ω 76 3dB 1.9G 2

4 Abstract Ridge-type 1.3µm InGaAsP diode lasers with planar waveguide structure have beem successfully fabricated and mounted on silicon submounds. The laser diodes were fabricated by first etch a ridge structure for light guidance.typical ridge width is around 3µm. After ridge etching, a SiO2 thin film was sputtered onto the sample as surface passivation layer, fllowing by the coating of Benzocyclobutene (BCB) polymer for surface planarization.the unwanted BCB polymer was removed by dry etching process until the passivation oxide can be observed.before metallization, SiO 2 layers above the ridge were removed by wet etching technique. The fabrication was completed by evaporating contact metals to the samples. The finished samples were cleaved into laser dies with a dimension of 500µm 300µm.The dies were mounted onto a Si submound for DC and AC measurement.the threshold current of the planarized laser is 34mA.The threshold voltage and total resistance of the planar device are 1.31V and 10.1Ω.The quantum efficiency as large as 76 is obtained.the frequency response of the device is also measured.the 3dB bandwidth is about 1.9GHz 3

5 DC AC

6 BCB 12 5

7 BCB BCB SEM SEM (To-can laser) (our device) (To-can laser) (our device) 31 6

8 1.3µm optical fiber [1] 1.3µm [2, 3] lateral index guiding transverse active region cladding layer confinement 1.3µm 1.5µm 1.5µm ~ 2µm Flip-Chip submound Au/Sn Au 1

9 BCB Å Flip-Chip submound OEIC(Optoelectronic Integrate Circuit) waveguide alignment BPM-CAD BCB lift off mounting wire bounding 2

10 comb generator DC AC 3

11 2-1 (Correlation Function Method) fundamental mode (x-direction) (y-direction) 2-1 layer Composition Thickness type Refractive index 0 InP Substrate 350µm n InP Buffer 0.5µm n InAlAs 0.1µm n GRIN AlQ (AlT to 0.96) 0.15µm u QW, 6Barrier 5/8.5(nm) GRIN AlQ (0.96 to AlT) 0.15µm u InAlAs 0.1µm u InP 0.17µm p InGaAsP 25nm p InP 0.18µm p InGaAsP 50nm p InGaAs 0.2µm p 3.4 4

12 BCB ridge BCB 2-1 ridge 2-2 5

13 FWHM 3.16µm 0.8µm n effect FWHM 3.16µm 0.8µm n effect BCB 1 BCB 1.6 6

14 3-1 : SiO2 BCB RIE SiO2 P N 7

15 (1) (2) (3) (4) (3) (5) (1) AZ r.p.m 40 (2)

16 (3) I-line 42 Mask1 (4) AZ-400K = (5) (1) 1 : to etch InGaAs and InP H 2 O : HCl : HBr : H 2 O 2 = 50 : 10 : 10 : 1 H 2 O HCl HBr H 2 O 2 H 2 O HCl 15 HBr H 2 O/HCl/HBr 15 H 2 O 2 2: to etch InP and stop at InGaAsP A = H 2 O : HCl = 1 : 4 (10 : 40) B = CH 3 COOH : HBr = 1 : 1 (25 : 25) A B (2) 1 H 2 O InGaAs InGaAsP InP 2 InP InGaAsP 2µm (3) 9

17 (4) (5) 30 InGaAsP etching stop layer MQW Mask 10

18 ridge 3µm 2µm BCB BCB SiO2 SiO2 (1) 2500Å SiO2 250W 3m torr 11

19 BCB (1) BCB 3-2 ( ) 300 N2 on N2 off BCB (min) (1) (RIE) (ECR) BCB SiO2 SF6 O2 6 5 (S.C.C.M) 10mtorr RIE 70W ECR 200W 12

20 SiO2 (1) BOE SiO2 NH4F H2O 70g SiO2 SiO2 BCB BCB 7.5µm BCB 13

21 SiO2 contact layer (1)~(5) (1) AZ rpm 40 (2) (3) I-line 44 (4) AZ-400K (1) HCl HCl

22 P (1) P Cr 420 Å Au Cr 500 Å 2500 Å Au/Sn submound Au/Sn contact (lift off) (1) (2) (3) (1) HCl HCl N (1) n Au/Ge 500 Å 500 Å Au Au/Ge 15

23 (annealing) (1) ridge BCB ` UV light 16

24 P p-metal 17

25 N p-metal n-metal mounting (1) 500µm 300µm laser die (2) mount 3500Å Au/Sn submound 300 (1) mounting In wire bounding mounting LD submoun 18

26 wire bounding In SMA connector 19

27 3-2 BCB Flip-Chip SOG BCB BCB BCB SOG BCB BCB SOG SOG BCB 1.6 SOG BCB self-aligned [4] ρl R= A 20

28 BCB 2µm 2000 Å 3-1 Height(Å) ~ 2000Å Scan length(µm) 3-1 BCB BCB SF6[5] BCB SiO2 SiO2 BOE SiO2 SiO2 BCB SiO 2 CHF 3 21

29 SiO 2 BCB [6] sample Specific contact resistance BCB BCB SiO 2 Height(Å) ~300Å Scan length(µm) 3-2 BCB 22

30 BCB ridge 3-3 SEM ridge BCB 3-4 SEM 23

31 DC I-V

32 I-P mA (Differential Quantum Efficiency)[7] 76 25

33 Normalized Intensity Angle (degree) 4-3 FWHM(Full Width at Half Maximum)[8] aspect ratio

34 4-3 comb generator RF Amplifier Bias T High Speed Measurement System RF Amplifier Comb generator Bias Tee laser diode lens detector DCA 100MHZ 9dBm Sine wave Signal generator oscilloscope 4-4 RF comb generator Bias T high speed detector( 2.5GHz) 27

35 4-4 AC Laser input pulse ps Bias T To-can 28

36 Laser ouput pulse (To-can) 1ns/div 4-6 (To-can laser) Laser output pulse(our device) 1ns/div 4-7 (our device) 29

37 To-can ps 527ps Response(dB) Frequency(GHz) (To-can) 30

38 2 0-2 Response(dB) Frequency(GHz) (our device) To-can 3dB 1.5GHz 1.9GHz 31

39 4-5 34mA current spreading cladding [9] buried heterostructure[10] active region cladding layer[11, 12] AC 241ps 696ps 527ps 3dB 1.5GHz 1.9GHz 2GHz 32

40 BCB mounting 34mA 1.31V 10.1Ω 76 3dB 1.9GHz mount submound mounting wire bounding wire 33

41 1.Govind P. Agrawal, and Niloy K. Dutta, Semiconductor lasers, Van Nostrand Reinhold, Ivan P. Kaminow, Fellow, IEEE, LawrenceW. Stulz, J. S. Ko, Andrew G. Dentai, Member, IEEE, Robert E. Nahory, J. Christian Dewinter, and Robert L. Hartman, Low-Threshold InGaAsP Ridge Waveguide Lasers at 1.3µm, IEEE J. Quantum Electron., vol. QE-19, no. 8, August R. F. Kazarinov and G. L. Belenky, Novel Design of AlGaInAs-InP Lasers Operating at 1.3µm, IEEE J. Quantum Electron., vol. 3, no 3, pp , C. C. Lin, K. S. Liu, M. C. Wu, and S. C. Ko and W. H. Wang, Facet- Coating Effects on the 1.3-µm AlGaInAs-InP Monolithic Laser Arrays, IEEE. J. Quantum Electron., vol. 36, pp , R. J. Shul, C. T. Sullivan and G. B. McClellan, Anisotropic ECR etching of Benzocyclobutene, Electron. Lett., vol. 31, no. 22, pp , Shau Jun Wu, Fabrication and Characterization of Planarized 0.808µm AlGaAs Diode Lasers, Institute of Electro-Optical Engineering,NSYS U, 2001.(Thesis) 7.P. Unger, P. Roentgin, G. L. Bona, Junction-side up Operation of AlGaInP laser with very low threshold currents, Electron. Lett., vol. 28, pp , Haiyin Sun, Measurement of laser diode astigmatism, Optical Engineering, vol. 36, no. 4, pp ,

42 9.Bor June Chen, Fabrication and Characterization of a Planar 0.67µm Diode laser with Facet Coating, Institute of Electro-Optical Engineering, NSYSU, 1999.(Thsis) 10.Keizo Takemasa, Munechika Kubota, Tsutomu Munakata, and Hiroshi Wada, 1.3-µm AlGaInAs Buried-Heterostructure Lasers, IEEE Photo. Technol. Lett., vol. 11, no. 8, pp , S. Y. Hu, D. B. Young, A. C. Gossard, L. A. Coldren, The Effect of Lateral Leakage Current On the Experimental Gain Current Density Curve in Quantum-Well Ridge-wave-Guide Lasers, IEEE J. Quantum Electron., vol. 3, Iss. 10, pp , S. Y. Hu, S. W. Corzine, K. K. Law, D. B. Young, A. C. Gossard, L.A. Coldren, and J. L. Mertz, Lareral Carrier Diffusion and Surface Recombination in InGaAs/AlGaAs Quantum-Well Ridge-wave-Guide Lasers, Appl. Phys. Lett., vol. 76, Iss. 8, pp ,

國立中山大學學位論文典藏

國立中山大學學位論文典藏 db/km ps/ km-nm 1.55µm 0.2dB/km 1.3µm 1.55µm 1.3µm [1] 1-1 1.55µm 1.3µm In x Ga 1-x As y P 1-y x y 1.1µm 1.65µm InGaAlAs [2,3] InGaAsP Lattice constant InP 1-2 0.75eV In 0.53 Ga 0.47 As 1.47eV In 0.52