[1-3] (Smile) [4] 808 nm (CW) W 1 50% 1 W 1 W Fig.1 Thermal design of semiconductor laser vertical stack ; Ansys 20 bar ; bar 2 25 Fig

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省宋尤
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1 Vol.40 No.6 Infrared and Laser Engineering Jun nm 2000 W ( ) : bar 808 nm bar 100 W 808 nm 20 bar W bar LIV bar 808 nm : : TN248.4 TN365 : A : (2011) nm CW 2000 W semiconductor laser vertical stack Zhang Entao 1 Zhang Yanxin 1 Xiong Lingling 1 Wang Jingwei 1 Kang Lijun 2 Yang Kai 2 Wu Di 2 Yuan Zhenbang 2 Dai Huabin 2 Liu Xingsheng 12 (1. State Key Laboratory of Transient Optics & Photonics Xi an Institute of Optics & Precision Mechanics of Chinese Academy of Sciences Xi an China; 2. Xi an Focuslight Optoelectronics Technology Co. Ltd. Xi an China) Abstract: In order to promote the performance and power of high-power semiconductor lasers double-faced thermal conduction technology was used thermal design and packaging design were theoretically analyzed and optimized which greatly improved the power of micro-channel water cooled vertical stack and single bar semiconductor lasers. The power of 808 nm 20 bars vertical stack semiconductor laser reaches W under the continuous wave (CW) condition the average power of each bar reaches 100 W. The experimental data of LIV character spectrum character facula and smile of near field the spreading angle and direction of semiconductor laser were obtained which showed the excellent performance of this semiconductor lasers. Also the life-time test experiment was carried out and the result shows the good performance. The highpower semiconductor lasers will be used in many application fields. Key words: high power semiconductor laser; vertical stack; micro-channel water cooled; continuous wave(cw) : ; : : (YZ200844) : (1978-) Entaozhang@163.com

1076 40 0 [1-3] (Smile) [4] 808 nm (CW) 2 000 W 1 50% 1 W 1 W Fig.1 Thermal design of semiconductor laser vertical stack ; Ansys 20 bar ; bar 2 25 Fig.

2 [1-3] (Smile) [4] 808 nm (CW) W 1 50% 1 W 1 W Fig.1 Thermal design of semiconductor laser vertical stack ; Ansys 20 bar ; bar 2 25 Fig.2 Structure design of double-side heat conduction 6 L/min 808 nm CW W 1(a) bar 3 bar bar 1(b) bar (a) 2(b) Fig.3 Thermal flux vector graph of CW micro-channel 3 water cooled semiconductor laser

6 :808 nm 2000 W 1077 91.3% 8.7% Smile 5 808 nm 20 bar 4(a) bar 4(b) 300 μm 5 Fig.5 Technics process of semiconductor lasers vertical stack 4 Fig.

3 6 :808 nm 2000 W % 8.7% Smile nm 20 bar 4(a) bar 4(b) 300 μm 5 Fig.5 Technics process of semiconductor lasers vertical stack 4 Fig.4 Semiconductor lasers vertical stack and micro-channel water cooler 808 nm 3.1 bar CW (QCW) bar CW 808 nm PI W bar 100 W 6 CW 100 A 900~1 000 nm bar W 51% 150 W QCW 8% 808 nm W bar 250 W [5] Smile bar bar bar nm PI Fig.6 PI curve of 808 nm CW micro-channel water cooled bar ( 4(b)) vertical stack semiconductor laser

1078 40 bar [6-7] bar ( 7 ) (FWHM) 3.35 nm90% 5.46 nm 0.5 nm 7 808 nm vertical stack semiconductor laser at 300 mm 9 300 mm 808 nm Fig.

7 Spectrum character of 808 nm CW micro-channel water ( 4(b)) cooled vertical stack semiconductor laser bar 808 nm bar 8 bar 25 CW 100 W LIV 10 100 A 55% 8

4 bar [6-7] bar ( 7 ) (FWHM) 3.35 nm90% 5.46 nm 0.5 nm nm vertical stack semiconductor laser at 300 mm mm 808 nm Fig.9 Laser spot of 808 nm CW micro-channel water cooled 3.2 bar Fig.7 Spectrum character of 808 nm CW micro-channel water ( 4(b)) cooled vertical stack semiconductor laser bar 808 nm bar 8 bar 25 CW 100 W LIV A 55% nm Fig.8 Laser spot of 808 nm CW micro-channel water cooled vertical stack semiconductor laser in near field 10 bar 808 nm LIV 808nm 2000W Zemax Fig.10 LIV curve of single bar 808 nm CW micro-channel water cooled 300 mm 9(a) ; semiconductor laser 9(b) ; 90% ( ) ( [6-7] 90%

6 :808 nm 2000 W 1079 11 FWHM 1.74 nm90% 2.85 nm 12 bar Fig.

11 Spectrum character of single bar 808nm CW micro-channel water cooled semiconductor laser 200 bar 808 nm 83% 2 nm 100% semiconductor laser in near field 2.

5 6 :808 nm 2000 W FWHM 1.74 nm90% 2.85 nm 12 bar Fig.12 Laser spot of single bar 808 nm CW micro-channel water cooled semiconductor laser in near field bar Smile 1 μm bar 808nm Fig.11 Spectrum character of single bar 808nm CW micro-channel water cooled semiconductor laser 200 bar 808 nm 83% 2 nm 100% semiconductor laser in near field 2.5 nm 900 bar 808 nm 99% 1 μm bar bar 95% FWHM 32.2 ; 95% bar FWHM (a) bar 12(b) 62 Smile [8] bar [8] CTE Smile 13 bar Smile Fig.13 "Smile" image of single bar micro-channel water cooled nm bar CTE Fig.14 Divergent angle of single bar 808 nm CW micro-channel water cooled laser diode in far filed

1080 40 bar : 300 mm 15 bar ±0.01 Smile 15 Fig.15 Centroid position migration after fast-axis collimating and slow-axis collimating bar 2 846 bar : 300 mm : ( ) 0.5 98.77%;96.87% ( ) ±0.

6 bar : 300 mm 15 bar ±0.01 Smile 15 Fig.15 Centroid position migration after fast-axis collimating and slow-axis collimating bar bar : 300 mm : ( ) %;96.87% ( ) ± bar 808 nm [1] Ma Xiaoyu Wang Jun Liu Suping. Present situation of investigations and applications in high power semiconductor lasers [J]. Infrared and Laser Engineering (2): CW (in Chinese) (CCP) 100 W [2] Yang Yongqiang. Cladding of high speed steel by high Iop 5%( 16 ) power diode laser[j]. Infrared and Laser Engineering (3): (in Chinese) [3] Gu Yuanyuan Peng Hangyu Wang Xiangpeng et al. High power and high brightness diode laser device [J]. Infrared and Laser Engineering (3): (in Chinese) [4] Liu Xingsheng Zhao Wei. Technology trend and challenges in high power semiconductor laser packaging [C]//Electronic Components and Technology Conference 2009: [5] Wang Jingwei Yuan Zhenbang Zhang Yanxin et al. 250 W QCW conduction cooled high power semiconductor laser [C]//Proceedings of 10th on Electronic Packaging 16 bar 808 nm Technology & High Density Packaging [6] Liu Xingsheng Wang Jingwei Wei Peiyong. Study of the Fig.16 Life time curve of single bar 808nm CW micro-channel mechanisms of spectral broadening in high power water cooled semiconductor semiconductor laser arrays [C]//IEEE 58th Electronic Components and Technology Conference 2008: [7] Wang Jingwei Yuan Zhenbang. Study of the mechanisms of spectral broadening in high power semiconductor laser arrays [J]. Chinese Journal of Lasers (1): (in Chinese) [8] Wang Jingwei Kang Lijun Yang Kai et al. Study of the mechanism of "smile" in high power diode laser arrays and CW W bar strategies in improving near-field linearity [C]//Proceedings of 59th Electronic Components and Technology Conference 2009:

2 ( 自然科学版 ) 第 20 卷波 ). 这种压缩波空气必然有一部分要绕流到车身两端的环状空间中, 形成与列车运行方向相反的空气流动. 在列车尾部, 会产生低于大气压的空气流

2 ( 自然科学版 ) 第 20 卷波 ). 这种压缩波空气必然有一部分要绕流到车身两端的环状空间中, 形成与列车运行方向相反的空气流动. 在列车尾部, 会产生低于大气压的空气流第 20 卷第 3 期 2014 年 6 月 ( 自然科学版 ) JOURNAL OF SHANGHAI UNIVERSITY (NATURAL SCIENCE) Vol. 20 No. 3 June 2014 DOI: 10.3969/j.issn.1007-2861.2013.07.031 基于 FLUENT 测轨道交通隧道中电波折射率结构常数张永