國立中山大學學位論文典藏.pdf

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1 Single Mode Buried Polymer Waveguides on Silicon Substrate

2 ??????

3 (SiO 2 ) (Single mode buried polymer waveguides) BPM CAD (trench) (Benezocy-clobutene, BCB) (guiding layer) SiO 2 (bottom cladding layer) (etching back method)bcb (top cladding layer) (cut back method) (propagation loss) (coupling loss) TE 0.91dB/cm TM 0.97dB/cm 0.06dB/cm 1.78dB?

4 Abstract In this paper, a single mode buried polymer waveguide on silicon dioxide layer on silicon substrate is presented. The waveguide was completed by first obtaining the optical field distribution using a beam propagation method. The waveguide structure is carefully designed to ensure a single-mode operation of this device. The waveguide was fabricated by first etching a trench on SiO 2 layer. Then Benezocy-clobutene (BCB) polymer was deposited onto the layer and cured in proper conditions. Finally, a thin hybrid sol-gel layer was used as the top cladding layer after the BCB polymer etch-back process. The propagation losses are 0.91dB/cm and 0.97dB/cm for TE and TM polarized lights. The polarization dependent loss is 0.06dB/cm. The coupling loss of the waveguide is 1.78dB.

6 BCB Sol-gel SiO BCB 22

7 BCB BCB BCB Sol-gel

9 ??? (Planar light wave circuit, PLC) (PLC) (optical switch)

10 PLC Dense Wavelength Division Multiplexing, DWDM?? (Flame Hydrolysis Deposition, FHD) [1] silica-on-silicon? FHD SiO 2 (polymer)? (polymer)[2,4,6]? (low propagation loss) (high temperature/thermal coefficient)?

11 ? (coupler) (optical splitter) (filter) (optical switch)?? ( buried waveguides ) ( ridgewaveguides ) ( diffusion waveguide ) ( laser diode) ( optical detector )?? (micro-prism bending) [9] (branch) [10]?

12 PECVD SiO 2 cladding layer? SiO 2 (spin-coating)? (sol-gel)[11] Beam Propagation Method (BPM) CAD? BCB BCB sol-gel? (propagation loss) (coupling loss)?

13 ? core core core?

14 ?? BPM CAD? PECVD 10µm SiO 2 (n SiO2 )=1.565? (dry etching) SiO 2 5µm 5µm (trench) (Benezocy-clobutene, BCB)[3]BCB (n BCB )=1.578? sol-gel 1µm (n sol-gel =1.47) (top-cladding layer)?

15 [9,12]?? PECVD? PECVD?

16 Sol-gel Thickness SiO 2 BCB Silicon n 2-1 layer index(for?=1.3µm) thickness(µm) top-cladding layer(sol-gel) core layer (BCB) bottom-cladding layer(sio 2 )

17 2-2. BCB sol-gel? Cyclotene BCB 2-2? sample? BCB sample BCB? BCB sample? (prism coupler) [10,11]1.3µm BCB 1.3µm?

18 Property value Dielectric Constant(1kHz~20GHz) 2.65 Dissipation Factor(1kHz~1MHz) Volume Resistivity(O-cm) 1x10 19 Thermal Conductivity(W/m k) 0.29 T g () >350 CTE(ppm/) 52 Viscosity 1100 Stress(Mpa) BCB 2-2 BCB 5000rpm 7.3µm? BCB Sample BCB etching back 5000rpm? 2-3 BCB 1.570~1.578 ; 200 BCB BCB BCB (glass transform temperature,t g )350 BCB Confinement factor?

19 Thickness(um) Speed(rpm) 2-2 BCB TE TM Index Curing temperature() 2-3 BCB

20 Si-1114 sol-gelsol-gel [11] inorganic organic sol-gel?? sol-gel?? sol-gel sol-gel 2-3 (rpm) (m) Sol-gel

21 5000rpm 0.7µm sol-gel 1µm sol-gel? 2-3. [5,8,12]? BPM CAD? Confinement factor Spot size?

22 Spot size 4.8µm 4.2µm Confinement factor 89.2% Coupling loss to single mode fiber 1.2 db

23 2-4 BPM CAD Spot Size 4.8µm 4.2µm 89.2% 1.2 db??

24 [8,12] ? 3-1. Sample Sol-gel Cr BCB Etch back BCB Cr SiO 2 3-1

25 3-2. Sample Sample Acetone? Sample Isopropyl Alcohol? Sample DI water? Sample 120? () Cr (Thermal Evaporation ) torr 75 Amp 0.4 Å /sec

26 3000 Å Photo-lighthography AZ rpm rpm 40sec sample? ot plat sec I-line 45secAZ ~40sec? sec Cr? Cr (wet etching) 120ml 100ml Cr-7T? sample Cr-7T 60sec 50Å/sec?

27 SiO 2 (Reactive Ion Etch, RIE ) sample RIE power (O 2 ) 80W 15 mtorr 6 s.c.c.m 10 min (Reactive Ion Etch, RIE ) (Electron Cyclotron Resonance, ECR)SiO 2

28 POWER (SF 6 ) RIE=100W; ECR=200W 8~10mtorr 6 s.c.c.m 83 min 602 A /min 3-2 SiO 2 Cr (1) sample Cr-7T Cr? BCB Sample BCB Sample 500rpm 60sec 5000rpm 40sec? BCB Sample 70 sample?

29 Temperature() Curing Time (min 3-2 BCB BCB etch back BCB etch back AZ rpm 40sec Sample hot plat sec? BCB BCB

30 RIE=100W, ECR=200W 8~10 mtorr SF 6 =6 s.c.c.m ; O 2 =4 s.c.c.m 1967 Å/min 3-3 BCB sol-gel Sample 5000rpm 40sec sol-gel? sol-gel sample

31 Curing Time() Temperature(min) 3-3 Sol-gel? Cr Cr SiO 2 Silicon

32 PR Cr SiO 2 Silicon PR Cr SiO 2 Silicon n Cr SiO 2 Silicon n

33 SiO Cr SiO 2 Silicon SiO 2 Silicon BCB BCB SiO 2 Silicon

34 BCB PR BCB Cr SiO 2 Silicon BCB BCB SiO 2 Silicon Sol-gel BCB Sol-gel SiO 2 Silicon 3-4

35 3-3. Cr SiO Å sample Cr Cr 3000 Å Cr? sample 50 ~60? SiO 2 sample 5 sample 3

36 sample? 3-5 SiO 2 SEM 5µm 5µm? 3-6 sol-gel BCB SiO 2 Silicon substrate? 3-5

37 3-6

38 ?? 4-1 sample?sample sample UV Pyrex-7740 sample UV UV sample Pyrex-7740 UV? 4-2. Blue-tape

39 Pyrex-7740 UV-epoxy Sol-gel BCB SiO 2 Silicon substrate 4-1? 0.3µm Al 2 O 3 90sec 90sec Al 2 O µmAl 2 O 3 120sec 120sec Al 2 O 3? 4-2

40 4-3?

41 4-3 [11,12]? coupler( )input 632.8nm Hi-Ne Laser input 1.3µm laser diode?coupler output polarizer input TE TM? output detector detector HP 4155 detector HP 4155? (1) 1.3µm lader diode (propagation loss)? ( cut-back method)[10]? Pi Po db

42 ? a = 10 Log P P o i (1) α (db) P i P o TE 0.92dB/cmTM 0.98dB/cm 0.06dB/cm 1.78dB?

43 Polarizer 1310nm 632.8nm Hi-Ne Len Couple Lens Lens Waveguide Lens Detector HP Semiconductor Parameter analyzer Loss (db) TE:y = x TM:y = x ength (cm) 4-5

44 ? sol-gel sol-gel sol-gel? BPM CAD? TE 0.92dB/cmTM 0.98dB/cm 0.06dB/cm 1.78dB, TM : 1.66Db? sol-gel sol-gel?

45 1. A. Kilian, J. Kirchof, G. Przyrembel, W. Wischmann,?Birefringence free planar optical waveguide made by flame hydrolysis deposition (FHD) through tailoring of the overcladding,? Journal of Lightwave Technology,, Vol. 18, 0 pp ,Feb B.L. Booth,?Low loss channel waveguides in polymers,? Journal of Lightwave Technology, Vol. 7, pp , Feb C.F. Kane, R.R. Krchnavek,?Benzocyclobutene optical waveguides,? IEEE Photonics Technology Letters, Vol. 7, pp , May C.W. Phelps, T.S. Barry, D.L. Rode, R.R. Krchnavek,? Low-loss, single-mode, organic polymer waveguides utilizing refractive index tailoring,? Journal of Lightwave Technology,, Vol. 15, pp , Oct L. Robitaille, C.L. Callender, J.P. Noad,?Design and fabrication of low-loss polymer waveguide components for on-chip optical interconnection,?ieee Photonics Technology Letters,Vol. 8, pp , Dec M. Usui, M. Hikita, T. Watanabe, M. Amano, S. Sugawara, S. Hayashida, S. Imamura,?Low-loss passive polymer optical waveguides with high environmental stability,? Journal of Lightwave Technology,, Vol.14, pp , Oct A.J.Beuhler, D.A. Wargowski, K.D. Singer, T. Kowalczyk,?Fabrication of low loss polyimide optical waveguides using thin-film multichipmodule process technology,? 44th Electronic Components and Technology Conference, pp , May J.Y. Lin, I.C. Yang, P.C. Lee and A.K.Chu,?Compact 1x2 Optical Couplers

46 base on Buried Optical Waveguides,? Institute of Electro-optical Engineering, National Sun Yat-sen University 10. G.T. Reed,?Methods of measurement of passive integrated optical waveguides,? Measurements on Optical Devices, IEE Colloquium on, pp. 2/1-2/7,Nov A. Moujoud, Z. Saddiki, T.T. ouam AND S.I. Najafi, the refractive-index variations with temperature of hybrid Thin Solid Films, pp , July 2002?Measurement of sol gel glasses?, 12.

[1-3] (Smile) [4] 808 nm (CW) W 1 50% 1 W 1 W Fig.1 Thermal design of semiconductor laser vertical stack ; Ansys 20 bar ; bar 2 25 Fig

[1-3] (Smile) [4] 808 nm (CW) W 1 50% 1 W 1 W Fig.1 Thermal design of semiconductor laser vertical stack ; Ansys 20 bar ; bar 2 25 Fig 40 6 2011 6 Vol.40 No.6 Infrared and Laser Engineering Jun. 2011 808 nm 2000 W 1 1 1 1 2 2 2 2 2 12 (1. 710119 2. 710119) : bar 808 nm bar 100 W 808 nm 20 bar 2 000 W bar LIV bar 808 nm : : TN248.4 TN365