D4

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成棼丁
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1 m SiGe BiCMOS 5-GHz 5/60 GHz 0.18-m SiGe BiCMOS 5/60 GHz Dual- Conversion Receiver Using a Shared Switchable 5-GHz Double Balance Gilbert Mixer m SiGe BiCMOS 5-GHz / (5/60 GHz) 5 GHz 60 GHz / 60 GHz 60 GHz (IF1) 5 GHz 5 GHz I/Q Q 5 GHz 5 GHz 4.9 GHz 5.4 GHz 60 MHz 18~26 db 8 db 60 GHz -1 db 3-dB 1 GHz Abstract A microwave/millimeter-wave dual-conversion receiver with a shared switchable 5-GHz Gilbert mixer is demonstrated using 0.18-m SiGe BiCMOS process in this paper. Because 5 GHz and 60 GHz are so far apart, a dual conversion architecture is adopted to integrate microwave/millimeter-wave paths in the same receiver. A sub-harmonic Schottky diode mixer is employed at the first conversion stage for the 60 GHz path while a shared switchable Gilbert mixer is employed at the second conversion stage to merge the first intermediate frequency (IF1) of the 60-GHz path with the signal received from the 5 GHz path. A tunable Q-enhanced cross-coupled active filter is inserted between the 5 GHz LNA and the shared switchable Gilbert I/Q mixer for the RF channel selection in the 5 GHz path. The 5-GHz path has 18 to 26 db conversion gain and noise figure of 8 db with a 60 MHz channel bandwidth for the tuning range from 4.9 GHz to 5.4 GHz while the 60-GHz path has conversion gain of -1 db and 3-dB IF bandwidth of 1 GHz..

2 NANO COMMUNICATION 24 No m SiGe BiCMOS 5-GHz5/60 GHz 021 Keywords Dual-conversionGilbert MixerSub-harmonicSchottky DiodeActive FilterChannel SelectionDirect-conversion (Data Rates) 60 GHz (Wireless Gigabit Alliance, WiGig) 2 GHz 60 GHz [1] (Institute of Electrical and Electronics Engineers, IEEE) IEEE ad 7 Gbit/s 256 QAM ac 1024 QAM ax (High-level-modulation) 5 GHz (Wireless LAN, WLAN) 5/60 GHz (Dualconversion Receiver) (Heterodyne Receiver) (Image Signal) (Off-chip) (Surface Acoustic Wave Filter) IC (Direct-conversion) (Baseband) 5/60 GHz 60 GHz 2 GHz (Channel Bandwidth) 5 GHz 5/60 GHz (IF2) (Gain-bandwidth Trade-off ) 5 GHz (Tunable Active Bandpass Filter) (IF2) 5 GHz (RF Channel Selection) Q (Cross-coupled) [2-3] Q 5 GHz 5 GHz (IF2) GHz /60 GHz (a) (b)

022 GHz 5 GHz MHz I/Q (Shared Switchable Double Balance Gilbert I/Q Mixer) 5 GHz 60 GHz 1(a) 1(b) 60 GHz (Subharmonic Schottky Diode Mixer) I/Q IF1 5 GHz 5/60 GHz IF 2 5/60 GHz 60 GHz

3 022 GHz 5 GHz MHz I/Q (Shared Switchable Double Balance Gilbert I/Q Mixer) 5 GHz 60 GHz 1(a) 1(b) 60 GHz (Subharmonic Schottky Diode Mixer) I/Q IF1 5 GHz 5/60 GHz IF 2 5/60 GHz 60 GHz ((Millimeter-wave) 5 GHz (Microwave) GHz (Embedded Silicon Process) (Turn-on Voltage)(Minority Carriers) (Rat-race Coupler) (Coupled) (Through)1/4 3/4 2(b) 180 [7] M5 M6 1/4 (Broadside Coupling)2(c) (M1) (Slow-wave)2(d) 2(b) (C h a r a c t e r i s t i c Impedance) 70.7 (Normalized)3(a) 2(b) GHz0.18- m SiGe BiCMOS (Cut-off Frequency) 60 GHz 0.18-m SiGe BiCMOS 200 GHz [4] (Anti-parallel Diode Pairs, APDPs) (Single Balance) [5-6] 2(a) LO 2 (a) (b) 1/4 3/4 (c) 1/4 (d)

NANO COMMUNICATION 24 No. 3 0.18-m SiGe BiCMOS 5-GHz5/60 GHz 023 3 (a) (b) 70.7 (c) 60 3(b) 3(a) 3(b) 2.

4 NANO COMMUNICATION 24 No m SiGe BiCMOS 5-GHz5/60 GHz (a) (b) 70.7 (c) 60 3(b) 3(a) 3(b) GHz 5 GHzMHz (Wideband) Q 60 5(a) 5(b) 5 GHz (Chebyshev)3(c) 4 60 GHz 60 GHz 1 GHz IF 2 Q(Center-tapped) (Buffer) 5(b) Vtune VbiasQ 6(a) I/Q60 GHz5 GHz (Transconductance)60 GHz5 GHz (V60GHz/V5GHz) I/Q6(b) (V60GHz/V5GHz)5 /60 GHz 60 GHz IF2 - (Shuntshunt Feedback Amplifier) 4 60 GHz (Poly-phase Filter) [ (Orthogonal)LO I/Q

024 5 (a) Q (b) 5 GHz (Cascade) 5 GHz Q 6 (a) I/Q (b) I/Q 5 GHz 60 GHz 7 0.18-m SiGe BiCMOS 5/60 GHz 2.45 x 1.8 mm 2 5 GHz 1.8 V 87 mw Vtune 4.9 GHz 5.

5 024 5 (a) Q (b) 5 GHz (Cascade) 5 GHz Q 6 (a) I/Q (b) I/Q 5 GHz 60 GHz m SiGe BiCMOS 5/60 GHz 2.45 x 1.8 mm 2 5 GHz 1.8 V 87 mw Vtune 4.9 GHz 5.4 GHz 60 MHz GHz 5.4 GHz (Conversion Gain) db IP1dB -50 dbmiip3-40 dbm3-db IF 2 30 MHz Q SiGe HBT (Flicker Noise) 8 db 60 GHz 82 mw m SiGe BiCMOS 5/60 GHz 57 GHz 64 GHz -3 1 dbip1db dbm -18 dbmiip3-6 dbm -10 dbm 3-dB IF2 0.8 GHz

6 NANO COMMUNICATION 24 No m SiGe BiCMOS 5-GHz5/60 GHz GHz 11 (Saturated) LO1 6 dbm 12(a) LO dbm I/Q 12(b) GHz IP1dB IIP3 8 5 GHz GHz IF2 9 5 GHz IF2 12(a) RF=60 GHz LO1 (b) RF=5.2 GHz LO 2

7 m SiGe BiCMOS 5 GHz 4.9 GHz 5.4 GHz This work is supported by National Science Council of Taiwan, Republic of China under contract numbers MOST E and by MoE ATU Program under contract number 105W958. The authors would like to thank National Chip Implementation Center (CIC) for technical support mixer and slow-wave rat race hybrid, in Proc. IEEE Global Symp. Millim. Waves (GSMM), pp , May [6] Yu-Chih Hsiao, Chinchun Meng, and Shih-Te Yang, 5/60 GHz 0.18 m CMOS Dual-Mode Dual- Conversion Receiver Using a Tunable Active Filter for 5-GHz Channel Selection, IEEE Microwave and Wireless Components Letters, vol. 26, no. 11, pp , Nov [7] S. March, A Wideband Stripline Hybrid Ring, IEEE Trans. Microwave Theory Tech., vol. MTT-16, pp.361, Jun [1] WiGig Unites 60 GHz Wireless Development. [Online]. Available: unites_60_ghz_wireless_development.html [2] R. F. Wiser, M. Zargari, D. K. Su, and B. A. Wooley, "A 5-GHz Wire-less LAN Transmitter with Integrated Tunable High-Q RF Filter," IEEE J. Solid-State Circuits., vol. 44, no.8, pp , Aug [3] T. Soorapanth and S. S. Wong, A 0-dB IL MHz bandpass filter utilizing Q-enhanced spiral inductors in standard CMOS, IEEE J. Solid-State Circuits, vol. 37, no. 5, pp , May [4] H.-J. Wei, C. C. Meng, T.-W. Wang, T.-L. Lo, and C.-L. Wang, 60-GHz dual-conversion down-/up-converters using Schottky diode in 0.18 m foundry CMOS technology, IEEE Trans. Microw. Theory Tech., vol. 60, no. 6, pp , Jun [5] Y.-C. Hsiao, C. C. Meng, and H.-J. Wei, 60-GHz m CMOS dual conversion receiver using Schottky diode

NANO COMMUNICATION 23 No.3 90 CMOS 94/188 GHz CMOS 94/188 GHz A 94/188 GHz Dual-Band VCO with Gm- Boosted Push-Push Pair in 90nm CMOS 90 CMOS 94

NANO COMMUNICATION 23 No.3 90 CMOS 94/188 GHz 23 90 CMOS 94/188 GHz A 94/188 GHz Dual-Band VCO with Gm- Boosted Push-Push Pair in 90nm CMOS 90 CMOS 94/188GHz LC class-b 0.70 0.75 mm 2 pad 1 V 19.6 ma (ƒ