Integration of Air Pollution Control Technologies for Semiconductor Industry NSC 89-EPA-Z-011-001 8871 891231. ( ) Abstract (Keywords:Semiconductor industry Air pollutionpollution control technology) Though the rise of semiconductor industry is PC only about forty years, the speed of rise is very fast. The electronic products have becoming the necessity of human daily life. Every developed country have put lots of efforts to do the research and development in order to take the advance position in industrial capability and market share. The yearly production value will be N.T 105.3 billion which declares the potential of the semiconductor industry. Due to very small amount of raw materials used in the semiconductor fabrication and highly recycle rate of the used products. Compared with other industries, the total pollution of semiconductor industry may be lower. However, certain processing technologies may use many hazardous chemicals which cause environmental problems. Therefore, the pollution control is still an important task of the semiconductor industry. The whole semiconductor fabrication process can be viewed as many batch reactors (process equipments) connected in a series. It is very easy to replace a particular process 1
equipment with a new one or even made by different manufacturers. The process parameters will also be different for each equipment. Therefore, in this study, will use the concepts of material balance to set up the model for each equipment then the material balance for the whole process is established by integrating each equipment model into a picked process. At the same time, the optimal exhaust strategy will be obtained. 1. 2.. 3. 4. 5. 6. 1 250 IC ( 2) 1 () 1 () A 87 2 (1)CVD nitride SiH 2 Cl 2 NH 3 (SiH 2 Cl 2 ) NH 3. (2)nitride etch NF 3 oxidation (3)CVD oxide SiH 4 CVD nitride (4)Metal etch via etch CF 4 C 2 F 6 BCl 3 Cl 2 SiH 4 2
( ) 1 (CVD) powder Local Scrubber 1. 1.Exhaust powder metal etch CVD process 2. pump back stream Cl 2 PH 3 AsH 3 SiH 4 B 2 H 4 2. Exhaust 3.Powder / 4. 1~5 3. H 2 SO 4 NH 3 HCl HF HNO 3 CH 3 COOHH 3 PO 4 (1)NH 3 4. (2)PH 3 AsH 3 (NaClO) (local scrubber) 3
4. + Oxidizer(Fixed Zeolite (3) Bed Concentrator) (B 2 H 6 ) (B 4 H 10 ) 5. + Oxidizer(Zeolite Rotary Concentrator) (BF 3 ) (BCl 3 ) ( ) 4 (4) (SiH 4 ) (SiH 2 Cl 2 NF 3 NH 3 BCl 3 Cl 2 CF 4 C 2 F 6 PH 3 AsH 3 PFCs (SiH 4 ) Ecosys G4 (SiH 2 Cl 2 ) powder Centrotherm H300 DAS H 2 6~10 Burn box 11~16 T/F L/S ( ) SiH 4 powder SiH 4 (NH 4 Cl) powder Maintain ( passivation )SiH 4 powder powder VOCs 1.VOC ABATEMENT SYSTEM: LCD VOC VOC <150PPM 30,000CMH ( ) 55,000CMH 3 VOC Destruction 99%VOC DMSOMEA 1~2ppm (VOC 55,000m 3 /Hr) (VOC 56,000m3/Hr) 1. ( ) (Fixed Carbon Bed Concentrator) 2.CATALYTIC FUME INCINETATOR ( ) 2. ( ) + ( ) (Fluidized Carbon Bed Concentrator) ( ) ( 3. (Activated Carbon Filter) 300) 4
8 3. 16~22 (1) Back-mixing () (Cleaning, A001) (2) Back-mixing (3) () (Diffusion, A002) SiH 4 NH 3 Turndown AsH 3 /H 2 PH 3 /He N 2 O 85% 10% () (Photolithography, A003) VOCs VOCs 5 VOCs () (Implanting, A004) 90% () (Etching, A005) VOCs 6 7 95% 4 () (Thin Film, A006) CVD CVD PFCs () (Chemical polishing, A007) VOCs (slurry) KOH NH 4 OH 2 () B () (DRAM) VOCs () (A001~A009) 5
13 () NF 3 VOCs ( 3 ) () 14 WF 3 NF 3 CVD-W (B005 3 B006) C005 ( 4) CVD-W () WF 6 NF 3 PECVD (B001~B004) PECVD NH 3 (C001~C004) N 2 O (B008) (C007) 9 NF 3 VOCs PECVD B 1011 10 ( 5) 88911899 B VOCs (PFCs) 12 () B PFCs 10 VOCs CF 4 C 2 F 6 NF 3 SF 6 C 3 F 8 C 4 F 8 CHF 3 32 2 PFCs 6
PFCs 2.Edwards Thermal Process Unit (TPU) GWP ( 6) GWP 90% Porous Wall NO x 3.Ecosys Guardian Active Oxidation Scrubber PFCs ()PFCs 4.Ecosys Phoenix Active Flame Oxidizer (1)CVD PFCs GWP 99% NG H 1. 2 NO x C 2 F 6 5.Delatech CDO (Controlled Decomposition/ Oxidation) 2. PFCs PFC 6.Kanken KT-1000 3. NF 3 + H 2 O N 2 HF Motorola NF 3 C 2 F 6 C 3 F 8 C 2 F 6 C 2 F 6 + H 2 O CO 2 + F 2 emission, 4. AsH 3 700 NF 3 (applied materials ) NF 3 F - 21~27 Novellus Applied Materials 28~29 700 100% (2)dry etch PFCs () 1. PFCs 2. PFCs 1. C2F 6 CHF 3 SF 6 (>95%)CF 4 ( >75%) 2. (3) 1. 3. VOCs 2.Plasma or Microwave 3. 4. 1.Edwards GRC(Gas Reactor Column) 5. PFCs EtchCVD Temperature Management System 120 PFC 7
1. 1998 8712. 876 19.S. P. Sun, D. Bennett, L. Zazzera, and W. 2. Reagen, Semiconductor International, Feb., / 1998. 867 20.B. A. Wofford, M. W. Jackson, C. Hartz, and J. 3. W. Bevan, Environ. Sci. Technol., Vol.33, 1999, 1892-1897 21.J. A. B. Van Hoeymissen, M. Daniel, N. 80 6 Anderson, W. Fyen, and M. Heyns, Mat. Res. Soc. Symp. Proc., Vol.447, 1997, 55-60 4. VLSI 22.C. L. Hartz, J. W. Bevan, M. W. Jackson and 8736 B. A. Wofford, Environ. Sci. Technol., Vol.32, 5. S.M.SZE, Semiconductor Devices Physics 1998, 682-687 and Technology, JOHN WILEY and SONS, 23.A. M. Pierce, J. Van Gompel, Mat. Res. Soc. (1985). Symp. Proc., Vol.447, 1997, 49-54 6. S.M.SZE, ULSI TECHNOLOGY, 24.J. Van Gompel, T. Walling, Semiconductor McGRAW-HILL. International, Sep., 1997. 7. 25.L. Zazzera, and W. Reagen, J. Electrochem. Soc., Vol.144, No.10, 1997, 3597~3601 pp.100-111 869 26. SDK Presents New Model of Flourine Gas 8. Scrubber, news from SDK, Oct. 28, 1999 27. pp.64-83 8512,, 1999, 168-178. 9. 28.G. M. Tom, J. Mcmanus, W. Knolle, and I. Stoll, Mat. Res. Soc. Symp. Proc., Vol.344, 1994, 267-272 pp.30-38 8710 29. 10.,, 1999, 230-238 863. 11. 846. 12. 1 764. 13. Fab.A pp.130- + VOCs Fab.B 137 863 14. - CDO SiO 2 Fab.C CDO SiO 2 881. Fab.D SiH 4 15.M. T. Mocella, Mat. Res. Soc. Symp. Proc., + VOCs Fab.E Vol.344, 1994, pp.255-258 16. + VOCs Fab.F 17. (1995). 18. 1998-8
3 Thin Films WF 6, NF 3 CVD-W ( 3) PH 3, H 2 ( 5) SiH 2Cl 2 CVD-Epi ( 4) NH 3, N 2O PECVD( 6) VOCs NF 3 AsH 3PH 3 NH 3, SiH 4, PH 3, N 2O 5 99% STEP NH 2,18,29 Nitridation 3 18.546 10-3 m ole/m in SiH 2 Cl 2 1.806 10-3 m ole/m in N 1,7,15,17, 2 Oxidation O 24,25,28,35 2 H 2 4,20,31,41 Nitride etch NF 3 280 sccm for 15.4 m in 6,22(wet), 42(dry) Oxide etch 23 Silicon etch 67,75 Viaetch (SiO 2 ) 58,68 M etal etch (dry) NF 3 CHF 3 H 2 SO 4 H 2 O 2 =41 (acid vapor) C 2 F 6 CF 3 O 2 CF 4 BCl 3 Cl 2 16 H 3 O1 CH 3 COOH 1 HNO 3 (acid vapor) 78 (wet) 70,78 Polyim ide etch O 2, VOC 61,73 Inversion protect deposition CF 4,O 2 (clean) Ion im plant 2 (Cleaning)-A001 (Diffusion)-A002 Ecosys ES-50 1. (Lithography)-A003 powder2. (Implantation)-A004 EDWARD GRC (Etching)-A005 (Thin Films)-A006 (CMP)-A007 (Cleaning-2)-A008 AsH 3 PH 3 8 40 sccm for 3.2 m in 75 sccm for 3.2 m in 112 sccm 120 sccm 147 sccm VOCs VOCs VOCs VOCs VOCs 4 SiH2Cl2 Ecosys G4 SiH4 DAS PH3 BRUN BOX TEOS NF3 BCl3 Cl2 NH3 CHF3 CF4 C2F6 NMP (14%) Iso_Propanol(14%) Acetone(10%) Ethyl Acetate(10%) Ethyl Lactate(10%) n-propanel(10%) HMDS(<1%) Methnol(<1%) CVD Edwards GRC Kanken KT-1000 VOC ABATEMENT SYSTEM (M&W) 9 VOCs 9
13 NH 6 3, SiH 4, PH 3, N 2 O AsH 3, PH 3 NF (cmm) 3 508 WF 6, NF 3, NH 3, N 2 O, 350PH 3, * 18 420 SiH 250 440 2 Cl 2, H 2 177 200 400 148 80 15 14 200 500 100 950 3000 200 950 3000 360 WF 6, NF 3 3 PH 3, H 2 5 VOC SiH 2 Cl 2 4 NH 3, N 2 O 6 TSMC 2 + Specitial Active cat. Bed 120000CMH TSMC 3/4 68000 CMH TSMC 5 + Specitial Active cat. Bed 112000 CMH TSMC 6 + Specitial Active cat. Bed 186000 CMH UMC 84000 CMH UMC 63000 CMH PSC 51000 CMH WINBON 2 (M&W) + Specitial Active catalyst Bed 45000 CMH WINBON 3 70000 CMH WINBON 4 + Specitial Active catalys Bed 45000 CMH WINBON 5 MOSEL (M&W) + Specitial Active catalys Bed 70000 CMH HITEL II 42000 CMH PSMC( ) (M&W) + Specitial Active catalys Bed 7000 CMH 7 (kg/hr) HF HCl H 2SO 4 HNO 3 H 3PO 4 ppm ppm mg/m 3 HF HCl H 2SO 4 HNO 3 H 3PO 4 ppm ppm SC-02 99% 5.3 5.5 SC-03 99% 5.3 5.5 16 16 0.15 0.29 0.56 1.2 SC-16 >95% 6.2 5.2 0.02 0.37 SC-12 >95% 0.16 0.87 0.29 0.4 10
SC-17 SC-04 SC-07 >95% 4 0.19 95% 6.6 1.25 1 10 95% 0.81 0.28 0.15 3.9 0.8 10 mg/n 3 C01 5.4 80 ppm N.D<0. 741 ppm 0.8 10 mg/n 3 C03 2.9 80 ppm N.D<0. 505 ppm 0.9 10 mg/n 3 C05 5.8 80 ppm N.D<0. 122 ppm 1.1 10 mg/n 3 C06 4.1 80 ppm N.D<0. 531 ppm C07 9.6 2175 ppm N.D<0. 1659 ppm C08 N.D<0. 44024 ppm N.D<0. 23464 ppm N.D<0. 1466 ppm C09 1.1 39021 ppm 12.8 21501 ppm 12 Process C06 modules 8.08 ppm NIEA A412.70A(1hr) C07 11.2 80 A001 ppm B001 N itridation ( N H 3,SiH 2, C l 2 ) NN itride etch etch (N F3) (N F 3) O xide etch (N F 3, C H F 3) V iaetch (SiO 2 ) M etal etch (CF 4, B C l 3, C l 2, acid vapor) Inversion protect deposition (CF 4,O 2 ) O xidation ( V O C ) Polyim ide etch ( V O C ) A002 A003 ( ) A004 A005 A006 A007 A008 A009 B002 B003 B004 B005 B006 B007 3 6.3 10 mg/n C0 36.8 80 mpp 1-3 4.72* 6 5.1 mg/s 102.1 810 3 mg/n C02 28.9 80 mpp -3 2.11* 8 5.1 mg/s 102.1 810 3 mg/n C03 08.7 80 mpp 0.01 5 5.5 mg/s C04 52.4 310 3 mg/n 421 80 mpp -4 N.D<1.64 5.1 mg/s C05 *100.03 839. g/s(m 3 0 A) N.D<5. pp NIEA C06 02 m A433.71(1hr) N.D<5. pp NIEA ) 02 m A433.71(1hr C001 C002 C003 C004 C005 C006 C007 B008 2 1 Process modules Process modules A001 B001 11 C001 A001 A002 A003 A004 B001 B002 B003 B004 C001 C002 C003 C004
3 6 Atmospheric lifetimes global warming potentials of PFCs 12