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Ferroelectric Random Access Memory FRAM FRAM, Ferroelectric Random Access Memory,, FRAM, EEPROM, FLASH,, FRAM FRAM EEPROM FLASH SRAM + + 150ns 5ms 10μs 55ns 10 13 10 6 10 5 Charge pump FRAM FRAM FRAM SOP/SONFRAM RFID LSI/LSI FRAMLSI,, FRAMLSI, FRAM FRAMLSI RFID LSI LSI LSI FRAM FRAMFerroelectric film FRAM PZT, ZrTi,,,,,,,, 1 0 EEPROM, FRAM, 0 Data PZT 1 Data PZT 3
FRAM 16Kbit 4Mbit SPI, 4Kbit 1Mbit I 2 C 3.3V, 1.8V EEPROM SOP, SON Small Outline Non-leaded packagewl-csp Wafer Level Chip Size Package TSOP SOP256Kbit 4Mbit SRAM, bit 8M/16M 8Mbit 1.8V-3.3V 4M 4Mbit MB85RQ4ML 1.7V-1.95V MB85R4M2T 1.8V-3.3V 2M MB85RS2MTA 1M MB85RC1MT MB85RS1MT 512K MB85RC512T MB85RS512T 256K MB85RC256V 2.7V-5.5V MB85RS256TY Automotive MB85RS256B MB85R256F 128K MB85RC128A MB85RS128TY Automotive 1.8V - 3.6V MB85RS128B 64K MB85RC64TA MB85RC64V 3.0V-5.5V MB85RS64T /TU MB85RS64 MB85RS64V 3.0V-5.5V 16K MB85RC16 MB85RC16V 3.0V-5.5V MB85RDP16LX(*) 1.65V-1.95V MB85RS16N 4K MB85RC04V 3.3V-5.5V * I 2 C 1.8V I 2 C 3.3V I 2 C 5.0V SPI 1.8V SPI 3.3V SPI 5.0V 3.3V 1.8V-3.3V FRAM 10,,,,,, / RAID,, IC IC 4
Ferroelectric Random Access Memory AEC-Q100 FRAM 125,,, MB85RS128TY MB85RS256TY, 125 125,,, FRAM AEC-Q100 *1, PPAP *2,, FRAM *1 : AEC Automotive Electronic Council *2 : PPAP Production Part Approval Process P/N MAX *3 MB85RS256TY 256Kbit 1.8 3.6V 33MHz -40 +125 10 13 10 10+85 1+125 *4 MB85RS128TY 128Kbit 1.8 3.6V 33MHz -40 +125 10 13 10 10+85 1+125 *4 SOP-8 SOP-8 *3 : +85,, datasheet *4 : 125, Instrument Cluster Car Infotainment ecall Electric Power Steering Vehicle Travelling Data Recorder EV/Battery Management nt System Tire Pressure Monitoring System 5
FRAM 8Mbit FRAM 8 Mbit FRAM, RAID, FRAM 8 Mbit FRAM SRAM,, SRAM FRAM, SRAM, 8 Mbit FRAM,, FRAM FRAM,, EEPROM,,,, FRAM,,, FRAM, FRAM,, FRAM,, FRAM, BLE,, ic-haus, FRAM, FRAM, FRAM Rotary encoder demo FRAM FRAM, FRAM FRAM,, SOP TSOP FRAM FRAM, FRAM, 6
Ferroelectric Random Access Memory FRAM I 2 C P/N MAX *1 MB85RC1MT 1Mbit 1.8 3.6V 3.4MHz -40 +85 10 13 10 10+85 SOP-8 MB85RC512T 512Kbit 1.8 3.6V 3.4MHz -40 +85 10 13 10 10+85 SOP-8 MB85RC256V 256Kbit 2.7 5.5V 1MHz -40 +85 10 12 1 10+85 SOP-8 MB85RC128A 128Kbit 2.7 3.6V 1MHz -40 +85 10 12 1 10+85 SOP-8 MB85RC64TA 64Kbit 1.8 3.6V 3.4MHz -40 +85 10 13 10 10+85 SOP-8 / SON-8 MB85RC64V 64Kbit 3.0 5.5V 1MHz -40 +85 10 12 1 10+85 SOP-8 MB85RC16 16Kbit 2.7 3.6V 1MHz -40 +85 10 12 1 10+85 SOP-8 / SON-8 MB85RC16V 16Kbit 3.0 5.5V 1MHz -40 +85 10 12 1 10+85 SOP-8 MB85RC04V 4Kbit 3.0 5.5 V 1MHz -40 +85 10 12 1 10+85 SOP-8 SPI P/N MAX *1 MB85RQ4ML *2 4Mbit 1.7 1.95V 108MHz -40 +85 10 13 10 10+85 SOP-16 MB85RS2MTA 2Mbit 1.8 3.6V 40MHz -40 +85 10 13 10 10+85 SOP-8 / DIP-8 MB85RS1MT 1Mbit 1.8 3.6V 30MHz/40MHz -40 +85 10 13 10 10+85 SOP-8 / WL-CSP MB85RS512T 512Kbit 1.8 3.6V 30MHz/40MHz -40 +85 10 13 10 10+85 SOP-8 MB85RS256TY *3 256Kbit 1.8 3.6V 33MHz -40 +125 10 13 10 10 +85 1+125 SOP-8 MB85RS256B 256Kbit 2.7 3.6V 33MHz -40 +85 10 12 1 10+85 SOP-8 MB85RS128TY *3 128Kbit 1.8 3.6V 33MHz -40 +125 10 13 10 10 +85 1+125 SOP-8 MB85RS128B 128Kbit 2.7 3.6V 33MHz -40 +85 10 12 1 10+85 SOP-8 MB85RS64V 64Kbit 3.0 5.5V 20MHz -40 +85 10 12 1 10+85 SOP-8 MB85RS64 64Kbit 2.7 3.6V 20MHz -40 +85 10 12 1 10+85 SOP-8 MB85RS64T 64Kbit 1.8 3.6V 10MHz -40 +85 10 12 1 10+85 SOP-8 / SON-8 MB85RS64TU 64Kbit 1.8 3.6V 10MHz -55 +85 10 12 1 10+85 SOP-8 / SON-8 MB85RS16N 16Kbit 2.7 3.6V 20MHz -40 +95 10 12 1 10+95 SOP-8 / SON-8 MB85RDP16LX *4 16Kbit 1.65 1.95V 15MHz *5-40 +105 10 13 10 10+105 SON-8 *1 +85,, datasheet *2 SPI Quad SPI *3 AEC-Q 100 125, *4 *5 Dual SPI, 7.5MHz 7
FRAM FRAM TSOP SOP 256Kbit 4Mbit FRAM MB85R4M2T1.8V 3.6V, MB85R256F2.7V 3.6V SRAM SRAM, P/N *1 MB85R4M2T 4Mbit 256K 16 1.8 3.6V 150ns -40 10 13 10 10+85 TSOP-44 MB85R256F 256Kbit 32K 8 2.7 3.6V 150ns -40 +85 10 12 1 10+85 TSOP-28 / SOP-28 *1 +85,, datasheet FRAM LSI FRAM IC, FRAMLSI LSI MB94R330 P/N MB94R330 3.0 3.6V I 2 C 400kHz -20 +85 10 12 1 SON-8 MB94R330, Challenge & Response,,,,,, LSI, LSI FRAM FRAM IP AES Encryption communication I 2 C, SPI RF LSI mm mm mm mm WL-CSP-8 *1 0.33 SOP-28 7.6 x 17.8 2.8 SON-8 3.0 x 2.0 0.7 SOP-8 3.9 x 5.1 1.75 TSOP-28 11.8 x 8.0 1.2 SOP-16 7.5 x 10.3 2.7 TSOP-44 10.2 x 18.4 1.2 *1 :, datasheet 8
Ferroelectric Random Access Memory RFID FRAM RFIDLSI FRAM, FRAMRFID LSI FRAMRFID LSI RFID, RFID, FA,,,, LSI, /, 1 /, ISO15693 ISO18000-3, 6 I/F MAX 0 256Byte P/N*1 2KByte 8KByte SPI UHF band : 860 960MHz 3m MB97R8130 8KB HF band : 13.56MHz 50cm MB89R112B 8KB UHF band : 860 960MHz 3m MB97R8050 0B EPC memory : 128bit MB97R8120 8KB Non SPI HF band : 13.56MHz 50cm MB89R119B 256B MB89R118C 2KB MB89R112A 8KB *1 RFID LSI P/N *1 I/F MB97R8110 UHF band : 860-960MHz *1 8KB ISO/IEC18000-63 EPC C1G2 Ver.1.2.0 SPI Master SPI Slave GPIO Key Matrix Scan 10+85 10 12 1 RFID LSI 9
FRAM MB97R8110 R/W EPC C1G2 FRAM I/F MB97R8110 FRAM&RFID FRAM,,,, Corporate Name: Fujitsu Electronics Inc. Head Office: Shin-Yokohama Chuo Bldg., 2-100-45, Shin-Yokohama, Kohoku-ku, Yokohama, Kanagawa, 222-8508 Japan URL: http://www.fujitsu.com/jp/group/fei/en 10
FUJITSU SEMICONDUCTOR LIMITED Shin-Yokohama Chuo Bldg., 2-100-45, Shin-Yokohama, Kohoku-ku, Yokohama, Kanagawa, 222-0033 Japan http://jp.fujitsu.com/fsl/en/ All Rights Reserved. FUJITSU SEMICONDUCTOR LIMITED, its subsidiaries and affiliates (collectively, "FUJITSU SEMICONDUCTOR") reserves the right to make changes to the information contained in this document without notice. Please contact your FUJITSU SEMICONDUCTOR sales representatives before order of FUJITSU SEMICONDUCTOR device. Information contained in this document, such as descriptions of function and application circuit examples is presented solely for reference to examples of operations and uses of FUJITSU SEMICONDUCTOR device. FUJITSU SEMICONDUCTOR disclaims any and all warranties of any kind, whether express or implied, related to such information, including, without limitation, quality, accuracy, performance, proper operation of the device or non-infringement. If you develop equipment or product incorporating the FUJITSU SEMICONDUCTOR device based on such information, you must assume any responsibility or liability arising out of or in connection with such information or any use thereof. FUJITSU SEMICONDUCTOR assumes no responsibility or liability for any damages whatsoever arising out of or in connection with such information or any use thereof. Nothing contained in this document shall be construed as granting or conferring any right under any patents, copyrights, or any other intellectual property rights of FUJITSU SEMICONDUCTOR or any third party by license or otherwise, express or implied. FUJITSU SEMICONDUCTOR assumes no responsibility or liability for any infringement of any intellectual property rights or other rights of third parties resulting from or in connection with the information contained herein or use thereof. The products described in this document are designed, developed and manufactured as contemplated for general use including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high levels of safety is secured, could lead directly to death, personal injury, severe physical damage or other loss (including, without limitation, use in nuclear facility, aircraft flight control system, air traffic control system, mass transport control system, medical life support system and military application), or (2) for use requiring extremely high level of reliability (including, without limitation, submersible repeater and artificial satellite). FUJITSU SEMICONDUCTOR shall not be liable for you and/or any third party for any claims or damages arising out of or in connection with above-mentioned uses of the products. Any semiconductor devices fail or malfunction with some probability. You are responsible for providing adequate designs and safeguards against injury, damage or loss from such failures or malfunctions, by incorporating safety design measures into your facility, equipments and products such as redundancy, fire protection, and prevention of overcurrent levels and other abnormal operating conditions. The products and technical information described in this document are subject to the Foreign Exchange and Foreign Trade Control Law of Japan, and may be subject to export or import laws or regulations in U.S. or other countries. You are responsible for ensuring compliance with such laws and regulations relating to export or re-export of the products and technical information described herein. All company names, brand names and trademarks herein are property of their respective owners. 2010-2017 FUJITSU SEMICONDUCTOR LIMITED Printed in Japan AD05-00033-10Y September 2017 Edited: System Memory Company