5/3/2010 1
IC LED / 2
3
() (IC/LED) // // // ( : ) // 4
2008 :8,532 :5,224 16,052 472,531 >1002% 30>>10018% <3080% (45%) (480) (1050) (220) ICFPD(40) (5433) (18%) (230) ICFPD(60) (70) (150) (2379) (37%) (1300) (500) ICFPD(100) (100) (300) (3640)
1800 1600 1400 1200 1000 800 600 400 200 0 610 728 965 1095 1250 1477 1573 1095 457 590 793 982 1213 1443 1650 1450 746 850 813 765 788 830 693 650 140 200 260 340 400 480 IC 59 63 110 99 142 208 210 175 FPD 201 279 378 385 497 450 3 23 35 () 3988 4276 4628 4511 4282 4297 3486 2765 : 2002 2003 2004 2005 2006 2007 2008 2009(f) 5000 4500 4000 3500 3000 2500 2000 1500 1000 500 0 6
2~3 ICLED +3 2012
8
(NT$1,000/G8.5G7.5) (NT$600/G8.5G6) (NT$60/) :(CNY455/G6G8.5)(CNY280/G8.5) (CNY138/G6)(CNY250/G8.5) 5/CNY1,225 AMAT3/G8.5PVD8.5CF Ulvac : Q170%
:
Samsung SonyLG NokiaApple Motorola
LCD 2004 2005 2006 2007 2008 2009 (e) () 11.8 8.4 10.7 12.6 15.1 14.1 () 201 279 378 385 497 422 () 1098 1,004 844 562 522 295 () 1287 1275 1211 934 1004 703 70% 60% 50% 40% 30% 20% 10% 0% 2008 2004 2005 2006 2007 2008 2009(e )
ARRAY 65% () CELL 25% LCD () LCM 10% ADI AEI PS AOI 1% 6% 25% 6% 0.8% 25% 5% 0.8% 5.5% 4.5% 8% 12.4% 30% 30% 7% 5% 15% 15% 30% 30% 10% 15% 60% 60% (93%) (40%) PI ODF 6% 10% 3% 10% 15% 15% 10% 2% 6% 8% 9% 6% 95% 2% 35% 35% 0% 0% 0% 40% 85% 100% 100% 20% (20%) (80%) ACF IC / 25% 25% 10% 11% 14% 15% 70% 40% 100% 100% 100% 100% CF Total Pitch Bali /Burr
TFT LCD G8.5 AOI G6 slit coater AMOLED Oxide TFT G6 G5 G8.5 (3u) AOI PI G6 AOI IC OLB bonding R2R R2R ODF G5 A
IC IC 15
2009NT$1,39027.3% 2010NT$3,000-(NT$1500/22) (NT$450/28)DRAM-(NT$520/42) (NT$450)Cu wire bonding 200993.5%200881.1% IC
:SEMI :SEMI
IC IC BenQ Acer Asus
19 1980 4 19661974 1974 1979 1987 6 1990 6 1994 DRAM DRAM 2001 12 2000 SoC IC 1996 2000 2004 1991 1980 1987 1966
: 2001 2002 2003 2004 2005 2006 2007 2008 2009(e) 5,269 6,529 8,188 10,990 11,179 13,933 14,667 13,473 12,186 733 933 870 1,908 1,433 2,064 2,544 2,318 1,898 43 59 63 110 99 142 208 210 173 690 874 807 1,798 1,334 1,922 2,336 2,108 1,725
/ (3D18) / (SEMATECH)
(3D IC) () () () X 20% X () 30% Via Oxide Cu Cu CMP X X X X X X X X X X () 10% 80% 80% X 20% 80% 30% 80% X 30% 5% X X X (BGA) 20% 10% 60% (WLCSP/ QFN/BGA) X 10% 90% 20% 10% 80%
200mm start when 150mm is 33% of total capacity 300mm start when 200mm is 45% of total capacity 450mm 2012-2013 Trigger 450mm when 300mm capacity is over 50% of total capacity
24
2009 2010-2013 2012 2013 2GW 2009 CIGSCIGS
180 873 2,700 750 2011 19921994PV 2005 2009 672 480 250 230 Japan 2008FIT 500%2009 132 100 274 43 Korea 2,320 650 2010 2000FIT2004 EGGPV 20107 2,200 1,560 1,200 Germa ny 2007FIT16 200892008 2009 500MW 500 2,560 600 Spain 2009 2008 2007 (MW)
Solar Cell Wafer Based Thin-Film Compound (C-Si) (Poly-Si) GaAs (A-Si)SiGe,SiC Cds,CdTe,CIS,CIGS Organic Nanotech Spherical 27
Technology Module Efficiency (%) Energy payback time (Year) Available resource (GW p ) Advantages Disadvantages Equipments Applications Efficiency PECVD, LPCVD (BIPV) a-si 6.4 (Kaneka) 1.9-3.0 1.65x10 5 (TCO) Cost, non-toxicity, raw materials (BIPV) Cost, the highest efficiency Toxicity, availability of raw materials, yield Evaporator, Sputter, Painting CIGS 12 (Wurthsolar) 1.3 1.8 56 240 (In) 9.3 (First Solar) Cost efficiency Toxicity, availability of raw materials, Uniformity CBD, close space sublimation CdTe 0.5 0.9 310 430 (Te)
30 200823 22.4% 62.3% 11.8% 3.4% 0 200 400 600 800 1000 1200 1400 0% 10% 20% 30% 40% 50% 60% 70% PV PV PV 2008 2008 700 700
CIGS CIGS CIGS CIGS AOI PECVD CVD / CIGS
LED LED 32
LED LED LEDNT$55LED LEDMOCVD MOCVDLED50040% 1023LG MOCVD300
LEDMOCVD/ MOCVD MOCVD1/3 35% 14% LED 14% MOCVD 37% 700 600 500 400 300 200 100 0 240 120 272 136 325 156 420 200 500 240 600 2005 2006 2007 2008 2009 2010 LED 288
2010MOCVD
2010MOCVD
() HVPE MOCVD () X X 5% X 10% X X / () 30% 30% 1% 30% 30% 70% 50% (/) () 80% 10% 10% 40% () 20% 10% 80% 10% X 30% 30% 30% 20%
Semes (19%) (18%) Micro (15%) AKT (82%) ULVAC (4%) Nikon (51%) Canon (49%) (UV)PVDCVD Track Track Track AOI PS CF Total Pitch Bali/Bu rr ADI AEIRoller Coater/DNS (35%) Toray (20%) TEL (18%) Koyo Thermo System (32%) Clean Technology (32%) ESPEC (16%) DNS (38%) TEL (30%) (19%) TEL (66%) YAC (15%) ADP (6%) DNS (45%) Semes( 32%) Micro (5%) TEL (58%) DNS (13%) Semes (12%) Murata / / / /// /// / / / / / 2.3% 22.5% 10% 9.6% 29% 1.5% 7% 4.3% 1% 1.5% 3.3% 8% CFPSCFTotal PitchBali/BurrULVAC (79%) AKT (8%) Canonanelva (8%) /2009 TFT TFT-LCD Array LCD Array 1 (1/4)
Nakan (70%) (15%) (6%)/PI Nakan (31%) ESPEC (23%) Denko (19%) Techno (46%) (31%) (14%) (77%) (9%) Lemi (4%) Medec (73%) SFA (13%) Takatori (4%) Toshiba Yasugawa FUNAC Murata ODF / / / / / / / 4% 10% 4% 2% 8% 5% 6% 9% 10% 20% 12% 10% AOI (29%) ULVAC (28%) Techno (19%) Kornic System (10%)TFT TFT-LCD Cell LCD Cell /2009 1 (2/4)
ACF (25%) Toray (20%) Panasonic Factory Solution (5%) ICACFCOGTAB/ Aging ovenpanasonic Factory Solution (43%) (37%) Toray (10%) (53%) (20%) (18%) Yamato scientific (78%) (4%) Micronics Japan (66%) Cathode (12%) Toray (7%) Murata / / / / / / / / / 25% 25% 15% 10% 14% 11% TFT TFT-LCD Module LCD Module /2009 1 (3/4)
Laser Repair Charm & Ci(24%) OLFT(22%) V Technology (14%) PDI(9%)Laser Repair Macro Inspection Micro Inspection RGV AGV/MG V Sorter AGV/MGV Sorter Stocker Olympus V Technology Takano ADP Olympus (50%) DE&T ADP Suntech Murata Daifuku Suntech / / / / Stocker Macro Inspection Micro Inspection CDOL Measure CD Measure RGV Cassette Station Cassette Station Sokkia V Technology Murata / / / / TFT TFT-LCD LCD /2009 1 (4/4)
44 (PVD) (CVD) () (ECD) (CMP) 505.1 94.8 429 (Dry Strip) / / (Track) (Stepper) 573.2 2,075.5 174.9 AMAT (41.4%) Novellus (21.1%) TEL (20.2%) Novellus (57.4%) Semitool (36.0%) AMAT (4.2%) AMAT (79.5%) Novellus (8.0%) Ulvac (6.1%) AMAT (72.4%) Ebara (23.5%) Tokyo Seimitsu (2.0%) Mattson (24.4%) PSK (23.4%) Novellus (19.3%) TEL (79.1%) Sokudo (12.7%) SEMES (5.0%) ASML (62.7%) Nikon (22.8%) Canon (14.5%) Lam Research (40.9%) TEL (25.5%) AMAT (23.4%) (Dry Etch) 1,494.3 () 2IC(1/3) /2009
45 / (Furnace) (RTP) (Critical Dimensio n Insp.) (Defect Insp.) (Thin Film Insp.) () (Automa tion) 176.4 208.4 161.1 167.4 705 647.6 (Ion Implant) 443.4 (Wet Station) (Single Wafer Processor) AMAT (70.6%) Mattson (18.5%) DNS (4.6%) TEL (43.0%) Hitachi Kokusai (35.1%) ASM (13.3%) Hitachi High -Tech. (64.1%) AMAT (16.7%) KLA-Tencor (12.2%) KLA-Tencor (38.4%) Rudolph (14.2%) Nanometrics (9.7%) KLA-Tencor (56%) AMAT (16.7%) Hitachi High Tech. (7.7%) Brooks (26.9%) Asyst (21.4%) HP (10.1%) Varian (43.1%) SEN (16.6%) AMAT (15.2%) Axcelis (14.3%) Nissin (10.0%) DNS (51.3%) TEL (21.3%) SES (14.1%) SEZ (42.7%) DNS (34.0%) Semitool (8.7%) 373.8 208 () /2009 2IC(2/3)
( ) () /2009 2IC(3/3) IC / Advantest Disco (52.7%) (37%) (55.6%) TEL(38.4%) Delta Design Hanmi Electroglas (31.3%) (18.2%) (4.8%) Seiko Epson (10.8% ) (17%) / / K&S TOWA ASM Shibuya ICOS Laserfront(5 (30.2%) (25.8%) (23.8%) (50.5%) (78%) 1.7%) ASM Dai-Ichi Disco Athlete Athlete (28.8%) (24.8%) (21.8%) (14.2%) (4.5%) Shinkawa BESI Yamada (24.5%) (19.2%) (16.3%) / Renesas (23.2%) ESEC (22.5%) ASM (19.8%) Panasonic( 32.2%) BESI (26.5%) Toray (17.6%) BTU (30%) Tamura (25%) RAM (23%) 46
PV / I-V a. b. c. PECVD a. b. Endeas Wacom Berger Oriel AMAT ULVAC Novellus TEL ESPEC Nakan TEL DNS TEL Hitachi Kokusai ASM Lam Research TEL AMAT TEL DNS AMAT Hitachi KLA TEL DNS 3(1/2) /2009
Glas s PECV D Testin g Clean er Las er Sputt er Wirin g Framin g Clean er Clean er Clean er Sputt er Las er Las er PV : EPV Berger NPC Endeas Belval Olbriht NPC Spire Panamac Meier Olbriht AMAT ULVAC Oerlikon Nano PV Adema NHT Asaki /2008 3(2/2)
HVPE MOCVD --- ID Saw, Wire Saw Sumitomo, AXT / Sumitomo Aixtron Wafer Bonder Finetech, Research Devices 0% <5% 0% X X X (Speed Fam) 10% S /2009 4LED(1/4) () LED LED LED(GaN LED(GaN) Laser Lift Off JPSA NA 0% 0% HVPE LED MOCVD Aixtron()80% Veeco(Emcore)10% Thomas Swan ()8% Nippon Sanso 2% X
/ CVD Oxford STS ()30 Samco 30% AMAT Plasmatherm Novellus (Photoresist Spinner) Kyowariken Karl-Suss (Aligner) Karl-Suss 50% Canon 20% Quintel 15% EVG (UV-Ozone Stripper) ULVAC Samco ACT(Ashland) (RIE) (ICP) Oxford STS Samco Unaxis Anelva TEL / / AMAT ULVAC Anelva (Furnace) (RTA) ULVAC ARTs Unaxis () () 50% 30% 30% 30% 30%70% 50% /2009 Clean Bench 4LED(2/4) () Samco GaN (80%) (DBR)thin film
4LED(3/4) () 10% LED/ LED Prober/Tester P.W.S 20 () (Wafer Back Grinder) LED LED Logitech() GN() LED LED Opto system // (Dicing Saw/Scriber/Breaker) Dicing Saw Disco()80 Scriber/breaker Opto System Tecdia Newwave()70% Speedfan 20% Opto system 50 () 25 (Tester) (Tester) 80% 10% /2009 LED LED Logitech 80 Dicing Saw Disco80 LED (Die Sorter) ASM() 60% 30 45% ASM() 90
(Die Bonder) ASM 80% K&S NEC TOSHIBA /2009 Flip Chip Bonding Flip Chip Bonder ASM 10 IC LED ChipIC 4LED(4/4) () (Wire Bonder) ASM 70% KAIJO 20% K&S TOSHIBA 80 (Molding) ASM LED (GaN) ASM 20% 80% 10% 30% 30% 20% 20% Trim/Form LED Nihon Garter Ismeca