CMOS 14 ADS..7 ADS

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2 CMOS 14 ADS..7 ADS

3 5.GHz The design of 5.GHz low voltage and low power consumption mixer with current reuse Maxwell s PHS 3 G OFDM 5 GHz RF RF SOC, System on a Chip (GaAs) (Bipolar) BiCMOS CMOS 0.18um f T 60 GHz CMOS CMOS CMOS

4 low voltage low power CMOS RF IC Design TSMC 0.18 um CMOS 0.534mW 5.GHz 4.1 (mixer) (transceiver) (down conversion mixer) 3.1 (up conversion mixer) Voltage Conversion Gain (Power ConversionGain) 4.3

5 VIFOUT ( rms) G V = V RFIN ( rms) PL ( IF ) G P = P AVS ( RF ) 4.3 V out Vout RS iout RL RL RS = 10 log 10 log 10 log = 10 log A V V = in R L i = in R S V R in L R S Vin RF Vout IF RS RL 10log( ) S L R R RS RL db 4.3 (dynamic range) 80 db 100 db ( ) ( ) 1 db (third-order intercept point) db 1 db

6 4.4 1 db 1 db 1 db (IP 1dB 1 db (OP 1dB ) 4.4 ( ) 1 db P 1dB 4.3. (IP 3 ) (IM3) 4.5 -

7 ω ω ω 1 ω ω 1 ω ω ω1 ω1 ω LO ω ω ω LO 1 1 ω ω 1 ω LO

8 Output Power Fundamental(Slope=1) 3-order inter-modulation (Slope=3) 4.7 (IP3) 4.7 (IIP3) IF IM3 IIP 3 IP 3 Two Tones P IIP 3 dbm P ( db ) Pin ( dbm) 0 1 LO 1 LO 1 LO LO P in P

9 IIP 3 P 1dB IIP 3 10 db P 1dB IIP : (MDS) (SNR) MDS = P + 10log BW + SNR RS = KT + NF + 10log BW + SNR min = 174dBm + NF + 10log BW + SNR Hz min P RS SNR min (NoiseFloor) (Spurious-free dynamic range, SFDR) 4.7 IM3 Noise Floor MDS 4.5 LO RF IF LO-IF Isolation = LO input port LO output port LO-RF Isolation = LO input port LO output port RF-IF Isolation = RF input port RF output port LO-IF LO min

10 LO-RF LO RF LO LNA RF-IF 4.6 (noise power) : 1. (thermal noise): Johnson. (shot noise): 3. (flick noise): 1/f white ( ) 4.9 V R ( f ) = 4kTR k (Boltzmann s constant JK ) T R 4.10 I R ( f ) = 4kT R MOS

11 flicker MOS Flicke (trapped) p MOS (channel resistance) I ( f ) = (4kT) r ds d r ds (homogeneous) I ( f ) = 4kT( 3) d g m F S N I I = = SO N O SNR SNR IN OUT S N I O db (cascade) : Fcascade F F 1 F 1 3 = L G1 GG 1 F n G n n SSB DSB

12 Single Side Band, SSB Double Side Band, DSB 3 db SSB 4.1 DSB homodyne AM SSB 4.13 DSB SSB DSB SSB DSB db 3dB 4.7

13 LNA LNA LNA IP x () t = Acosωt y 3 () t = α x( t) + α x ( t) + x ( t) 1 α ( ) = cos + cos + cos y t α A ωt α A ωt α A ωt αa 3α3A αa α3a = + α1a + cosωt+ cos ωt+ cos 3ωt RF IF S 10 db LO LO LO

14 4.10 CMOS 5.1 IC MOS MOS CMOS

15 RF+ LO+ OUT+ LO- LO- OUT- LO+ RF- MOS R ON 5. CMOS IC 5.3 LO M 1 V DS M 1 RF LO

17 M 1 M M 3 R L 5.4 RF M 1 M M 3 LO MOS LO LO 4.5 M M g m R L π IF RF RF-IF LO IF LO LO-IF RF I Q LO 5.5 Gilbert mixer RF LO IF LO M 3 -M 4 M 5 -M 6 MOS LO MOS M 3 M 6 RF+ RF- LO MOS RF

18 RF M 1 M (transconductance) 5.5. LO M 3 ~M 6 LO LO LO LO LO IF g m R L PMOS PMOS r ds PMOS

19 4.9 (a) LO (b) RF LO IF LO 6.1 LO Power chocke (a) (b) 6.1 (a) (b) Gilbert mixer Gilbert mixer RF LO port port (1) ()

20 CG V IF = = gmrload (1) VRF π CG=. KnI SS RL π () IP3 (3) IP3 3 3 I SS β n (3) () (3) (current-reuse bleed)[1] (charge injection)[] (a) (b) 6.3 (a) (b)

21 6.3 gm = g m1 + gm g m I D M 1 ( 1 ) ( 1 ) I D M D I M 1 W L (W/L) 1 = (W/L) ( W L) 1 ( W L) = 0.5(W/L) ( W L) M ( 1 ) D I ( W L)1 M1 g m = 1 ( ) I D g + g m1 m 6.4 LO Vcc RF (current reuse) [3] 4 PMOS NMOS CMOS NMOS g m NMOS PMOS g m M 1 M [4] RF

22 5 [4] (1) M p M n () M p R P M n (3) M n R n M p Lp Lp Ln Ln 6.5 (a) (b) (c) M p M n RF M p M n 6[5]

23 6.6 Current reuse NMOS PMOS 1 V DD 1. Vo, V m1 m1 VB1= Vo=575.0mV VB1 50 Ω (R 1 ) M 1 1 R1 // r g m1 o1 4 (R o ) 1 R O = // ro 1 // RS 5 g m1

24 6.7 Current reuse 1 current reuse TSMC 0.18 um 1.8 V CMOS Model CMOS

25 6.8 Current reuse CMOS

26 (1) paper standard () ADS (3) layout Cadence (4) netlist (1) W L W L W L () 50Ω ADS

27 dB S Simulation-S_Param

28 7. 4. LNA Simulation-HB RF LO Mixer 3 LO RF VAR LO 0 dbm RF (-30 dbm) RF HARMONIC BALANCE Sweep Parameter to sweep RF

29 RF

30 Eqn1: V1 IF HARMONIC BALANCE Freq[1] LO Freq[] RF IF=RF-LO V1(LO,RF) LO -1 RF 1 mix (1) () Eqn: V1(IF) dbm RF P_1dB IIP3 P_1dB P_1dB Power IIP3 GHz 1 MHz

31 IP3 IIP3 OIP3 IP LO-RF IF-RF RF 値 LO 0 dbm RF-LO RF-IF RF -30 dbm

33 HARMONIC BALANCE NFssb NFdsb NFdsb 3 db 7.6 Simulate Annotate DC Solution 値値

34 ADS ADS Agilent ADS 1. V 5. GHz LO Power 8.1 LO Power RF 5. GHz db 8.3 LO (5.1 GHz) db 8.4 (100 MHz) db gain m9 P_LO= gain1=4.370 m9 db(s(1,1)) m4 freq= 5.00GHz db(s(1,1))= m P_LO freq, GHz 8.1 LO Power 8. RF

35 db(s(,)) m5 freq= 5.100GHz db(s(,))=-13.0 m5 db(s(3,3)) m6 m6 freq= 100.0MHz db(s(3,3))= freq, GHz freq, GHz 8.3 LO 8.4 IF RF -30 dbm LO 0 dbm RF LO IF db db 8.6 LO IF RF db db( (-30 db)) 8.7 IF LO RF db db( db-(-30 db)) 8.8 DSB SSB 0 m freq= 100.0MHz dbm(rf)= m1 freq= 5.100GHz dbm(rf)= m3 m4 freq= 100.0MHz freq= 5.00GHz dbm(lo)= dbm(lo)= dbm(rf) -100 m m1 dbm(lo) m m freq, GHz freq, GHz 8.5 LO-RF IF-RF 8.6 IF-LO RF-LO m5 freq= 5.100GHz dbm(if1)= m5 m6 m6 freq= 5.00GHz dbm(if1)= m1 noisefreq= 100.0MHz m noisefreq= 100.0MHz NFdsb=13.30 NFssb= m dbm(if1) NFssb NFdsb m freq, GHz noisefreq, MHz 8.7 LO-IF RF-IF 8.8

36 V RF 5. GHz Power -30 dbm LO 5.1 GHz Power = 0 dbm P in 1dB = -10 dbm IIP3 = 0 dbm 10 m1 P_RF= dbm(vif)= m P_RF= Pideol= m1 P_RF= Pideol=4.357 m1 0 Pideol dbm(vif) m1 m Pideol dbm(vif) dbm(vif1) P_RF 8.9 P 1dB (LO Power = 0 dbm) P_RF 8.10 IIP3 (SS TT FF) TSMC 0.18um: Simulated Characteristics(process corner) RF Frequency /RF power 5. GHz/ -30 dbm LO Frequency / LO power 5.1 GHz/ 0 dbm IF Frequency 100 MHz Process Corner SS TT FF Core Vdd 1. V 1. V 1. V Buffer Vdd 1. V 1. V 1. V Conversion Gain 3.63 db 4.37 db 4.79 db P1dB -14 dbm -10 dbm -14 db IIP3-4 dbm 0 dbm -4 db LO-RF isolation db db db IF-RF isolation db db db IF-LO isolation db db db RF-LO isolation db db db LO-IF isolation db db db RF-IF isolation db db db RF Port Return Loss db db db LO Port Return Loss db db db IF Port Return Loss db db db Noise figure(dsb) db 13.3 db db Core Power consumption 0.1 mw mw 1.84 db Buffer Power consumption mw mw db

37 0.8 V 1 V 1. V 1.4 V 1.8 V Conversion Gain db db 4.37 db db db P1dB 3 dbm 5 dbm -10 dbm 5 dbm 3 dbm IIP3 1 dbm 14 dbm 0 dbm 15 dbm 1 dbm LO-RF isolation db db db db db RF Port Return Loss db db db db db LO Port Return Loss db db db db db IF Port Return Loss db db db db db Conversion Gain db 4.37 db db P1dB -8 dbm -10 dbm -13 dbm IIP3 dbm 0 dbm -3 dbm RF Port Return Loss db db db LO Port Return Loss db db db IF Port Return Loss db db db paper [6] [7] [8] THIS WORK Tech. 0.18um CMOS Gilbert Folded 0.18um CMOS 0.18um CMOS 0.18um CMOS Conversion Gain(dB) P1dB(dBm) IIP3 [dbm] Pdiss [mw]

38 TSMC 0.18um: Simulated Characteristics IF frequency LO Frequency / LO power RF Frequency / RF power Operation Voltage Conversion Gain Input P 1dB IIP3 LO-RF isolation IF-RF isolation IF-LO isolation RF-LO isolation LO-IF isolation RF-IF isolation RF Port Return Loss LO Port Return Loss IF Port Return Loss Noise figure(dsb) Core Power consumption Buffer Power consumption 100 MHz 5.1 GHz/ 0 dbm 5. GHz/ -30 dbm 1. V 4.37 db -10 dbm 0 dbm db db db db db db db db db 13.3 db mw mw on wafer G-S-G pad 100 µ m on wafer CIC RF 5. GHz 1 * mm G-S-G-S-G RF input LO input IF Layout chip on wafer test RF probe DC probe S (S11 S S33) P 1dB IIP3

39 S P 1dB IIP3 P 1dB IIP3 Power Supply RF Combiner*3 DC Probe*1(5PIN) RF Probe*3(3PIN) IIP3 On wafer test [1] S. G. Lee, J. K. Choi, Current-reuse bleeding mixer, Electronics Letters, Vol. 36, Issue 8, pp , April 000. [] NacEachern, L.A.; Manku, T Leonard A.MacEachern, A charge-injection method for gilber cell biasing, Electrical and Computer Engineering, IEEE Canadian Conference on Volume 1 Page(s): , 4-8 May [3] A. N. Karanicolas, A.7-V 900-MHz CMOS LNA and mixer, IEEE Journal of Solid-State Circuits,: Vol. 31, Issue 1, pp , Dec [4] Ming-Feng Huang, Shuenn-Yuh Lee, and Chung u.kuo, Analysis and Implementation of a CMOS Even Harmonic Mixer with Current Reuse for Heterodyne/Direct Conversion Receivers. IEEE Transactions on Volume 5, Issue 9, Page(s): , Sept [5] CMOS [6] Vidojkovic, V., et al., Mixer Topology Selection for a GHzMulti-Standard Front-End in 0.18um CMOS, ISCAS,003 [7] Vojkan Vidojkovic, Johan van der Tang, A Low-Voltage Folded-Switching Mixer in m CMOS,IEEE,005 [8] Carsten Hermann, Marc Tiebout,, A 0.6-V 1.6-mW Transformer-Based.5-GHz Downconversion Mixer With +5.4-dB Gain and.8-dbm IIP3 in 0.13-_m CMOS, IEEE, DRC :

40 TSMC 0.18um Mixed-Signal/RF 1P6M Process DRC / command file : CTM Metal Density capacitor N/A CTM.R. CTM density is not enough. LVS :!!

41 !! *** Chip Features*** CKT name : 5.GHz Technology : TSMC 0.18um 1P6M Package : ( ) Chip Size : x mm ( mm ) Transistor/Gate Count : 4 NMOS PMOS ( / ) Power Dissipation : mw ( mw) ( buffer) Max. Frequency : RF = 5. GHz LO = 5.1 ( GHz) CAD Tools : ADS Testing Results : function work partial work fail

42 Chip Size: * mm

NANO COMMUNICATION 23 No.3 90 CMOS 94/188 GHz CMOS 94/188 GHz A 94/188 GHz Dual-Band VCO with Gm- Boosted Push-Push Pair in 90nm CMOS 90 CMOS 94

NANO COMMUNICATION 23 No.3 90 CMOS 94/188 GHz 23 90 CMOS 94/188 GHz A 94/188 GHz Dual-Band VCO with Gm- Boosted Push-Push Pair in 90nm CMOS 90 CMOS 94/188GHz LC class-b 0.70 0.75 mm 2 pad 1 V 19.6 ma (ƒ