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1 GHz CMOS 103 e-learning ( ) 103 / CIC Introduction to Conversational French - Syllabus Summer

2 102 SoC ( CIC ) Full-custom 32 Full-custom 28 Analog Circuit 28 FPGA 32 Cell Based Design 53 ESL IC Linux performance 12 ESL 8-point FFT Cortex- M4 16-point FFT 2 8-point FFT RTL Verilog (B) Synopsys Platform Architect ARM DS-5 FFT FFT SystemC 8- point FFT Verilog Cortex-M4 SystemC/Verilog 2

3 Full-custom String Matching Engine Image process DSP Communication Filter DC Servo Loop Full-custom ( External Resistor) 8~12MHz FPGA CIC MorFPGA IC IC 5 2 3

4 IC IC MEMS 4

5 C M O S 5

6 210 GHz CMOS (Design and Implementation of a 210 GHz CMOS Amplifier) / 40 CMOS 210 GHz GHz 10.5 db 13 GHz 0.8 V db CMOS 200 GHz CMOS 200 GHz (Cut-off Frequency, ft) (Silicon Substrate) (Ultra-Thick Top Metal ) MIM (Metal-Insulator-Metal) CMOS 100 GHz CMOS (Common Source) (Cascode) [1] (Impedance Transformation) ft (Inter-stage coupling) 210 GHz 40 CMOS 210 GHz CMOS 6

7 S ( Maximum Available Gain, MAG ) CMOS ft ( Unilateral Amplifier ) 0.5 db Ri Ci Ro Co (Transconductance) gm S- (1) f0 gm/ci ft [2] [3] RS = RL (1) (2) 7

8 40 NMOS MAG Gv,max H21 40 NMOS Gv,max MAG (H21) 10.8 (VGS) (VDD) 0.8V Gv,max MAG (Unconditionally Stable) 200 GHz (2) 210 GHz Gv,max (2) Ro ft L Ro ft RO L ft 1/L Gv,max Ro/Ri Cascode CS gmro (Intrinsic Gain) Cascode Ri Cascode (Ro/Ri) CS 5 CS CG (Common Gate) Cascode ft Cascode CS 1 db Cascode VDD CS Cascode 200GHz LC (Self-resonant Frequency) 200GHz 200 GHz (Single-Stub Shunt Matching Network) 8

9 (a) (b) (a) (b) (Insertion Loss, IL) ZL ZS (Smith Chart) (a) ZS= 50 Ω TL1 TL2 d l (b) Z0 A B α db/λ IL PL/Pin = (PL/Pd)(Pd/Pin) (4) Gd Gstub YD Ystub ΓL = (ZL-Z0)/(ZL+Z0) Z0 d l (Conjugate Matching) [4] Z0 50 Ω 210 GHz α 2.8 db/λ ZL ZS ZL ZS 50Ω Agilent ADS ZL ZS IL IL [5] Gv,max IL Gv,max Ro/Ri 9

10 IL GHz IL Ro/Ri 210 GHz CS Cascode IL IL Gv,max (Total Gain) ILi ILo 50Ω MOS VGS= 0.8V CS Cascode VDD 0.8V 1.6V finger number 2 32 finger 0.9 µm Cascode ILo Cascode 1.5 db Cascode (nr=20) Cascode CS 210 GHz 210 GHz 40 CMOS CS nr = 12 10

11 9 (CPW) (Microstrip) (Ground Plane) 4.5 µm (Multi-line De-embedding Method) Pad 720 µm 540 µm ADS MLIN (Modeling) ft ft VDS 0.9V VDS VGS ft ft VDS dc 0.67 / ft 11

12 Gv,max (ac) (dc) ac CS Gv,max 0.45 db Gv,max MOM 1 db dc (a) (b) Zout Zin (a) (b) d l x 0.1λ (Shunt Stub) 0.94 db 12

13 ADS Momentum ILi ILo db 1.6 db 210 GHz 3.0 db 10 db db GHz 40 CMOS MIM 140 GHz 220 GHz S HP 4142B RF E8361C N5260A N5256AW05 LRRM 13

14 S S S GHz 10.5 db 3- db 13 GHz GHz S11 S22-12 db -22 db (S12) -30 db 0.8 V 52.9 ma (NF)210 GHz 13.4 db 210 GHz (PAE) 0.8V 1dB (P1dB) -7.2 dbm (PSAT) -3.2 dbm PAE 0.75 VDD= 0.9 V PSAT -2.4 dbm 1.8 db210 GHz 140 GHz CMOS 14

15 fpeak Gain VDD PDC Ref. Tech. Gain P1dB (dbm) Area (GHz) (V) (mw) (db) (mm 2 ) [6] 65 nm [7] 65 nm [8] 65 nm [9] 65 nm 142 * * [10] 65 nm * [11] 65 nm * This 40 nm Work *. 40 CMOS 210 GHz GHz 10.5 db 0.8 V GHz [1] T. Yao et al., Algorithmic design of CMOS LNAs and PAs for 60GHz radio, IEEE J. of Solid State Circuits, Vol. 42, No. 5, May [2] C.-H. Li and C.-N. Kuo, 16.9-mW 33.7-dB gain mmwave receiver front-end in 65 nm CMOS, in 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2012, pp [3] E. Laskin, P. Chevalier, A. Chantre, B. Sautreuil, and S. P. Voinigescu, 165-GHz transceiver in SiGe technology, IEEE J. Solid-State Circuits, vol. 43, no. 5, pp , May [4] D. M. Pozar, Microwave Engineering, 3rd ed. New York: Wiley, [5] I. Aoki, S. D. Kee, D. B. Rutledge, and A. Hajimiri, Distributed active transformer A new powercombining and impedance-transformation technique, IEEE Trans. Microw. Theory Tech., vol. 50, no. 1, pp , Mar [6] Z. Xu, Q. J. Gu and M.-C. F. Chang, 200 GHz CMOS amplifier working close to device ft, Electronics Letters, vol. 47, no. 11, pp , May [7] M. Seo, B. Jagannathan, J. Pekarik, and M. J. W. Rodwell, A 150 GHz amplifier with 8 db gain and +6 dbm Psat in digital 65 nm CMOS using dummy-prefilled microstrip lines, IEEE J. Solid-State Circuits, vol. 44, no. 12, pp , Dec [8] Z. Xu, Q. J. Gu, and M.-C. F. Chang, A three stage, fully differential GHz CMOS amplifier with wide band matching, IEEE Micorw. Wireless Compon. Lett., vol. 21, no. 10, pp , Oct [9] A. Tang, D. Murphy, F. Hsiao, Q. J. Gu, Z. Xu, G. Virbila, Y.-H. Wang, H. Wu, L. Nan, Y.-C. Wu, and M.-C. F. Chang, A CMOS GHz 0.4 dbm EIRP transmitter with 5.1 db P1dB extension using IF envelope feed-forward gain compensation, in IEEE MTT-S Int. Microwave Symp. Dig., 2012, pp [10]S. T. Nicolson, A. Tomkins, K. W. Tang, A. Cathelin, D. Belot, and S. P. Voinigescu, A 1.2V, 140GHz receiver with on-die antenna in 65 nm CMOS, in Proc. IEEE Radio Frequency Integrated Circuits Symp., 2008, pp [11]R. Fujimoto, M. Motoyoshi, K. Takano, and M. Fujishima, A 120 GHz / 140 GHz dual-channel ASK receiver using standard 65 nm CMOS technology, in Proc. Eur. Microw. Conf., 2011, pp

16 CIC (Automotive Transient Immunity Tester, TESEQ NSG5500) ISO (2004) ISO (2011) ISO (2010) (06)

17 103! IC IC IC CIC ,000 3,000 10,000 50% 70% (1) (2) huyjen@narlabs.org.tw FAX

18 18

19 103 e-learning 103 CIC : e-learning 流劉 huyjen@cic.narl.org.tw /5~5/25 8/4~8/24 10/6~10/26 6/2~6/15 9/1~9/14 11/03~11/16 19

20 103E001-B HSPICE 103E002-B Full-Custom IC Design Concept 103E003-B RF CMOS IC Design 103E004-B Verdi fundamental and Siloti full-chip-simulation training 103E005-B LakerADP+LakerL3 SDL flow training 103E006-B Advanced Design System - Fundamentals 103E007-B CMOS BioMEMS Sensing Technology 103E008-B Sensor Readout Circuit Technology 103E009-B RF 103E010-B Advanced Design System - Momentum 103E011-B Digital IC Testing Step-by-Step with Verigy E012-B Step Into Electronic System Level Design 103E013-B FPGA Design Fundamentals for Altera 103E014-B Logic Synthesis (Synopsys) 103E015-B Cell-Based IC Physical Design and Verification with IC Compiler 103E016-B Brief Introduction of Cell-based Design 103E017-B T18 103E018-B TSMC 0.35UM 20

21 ~103 ~ /

22 T25HVG2-103B IC ( )/ ( ) T25HVG2-103B-A0001, 1.900*1.900 T25HVG2-103B-A0002 / 1.635*1.335 T25HVG2-103B-A *0.955 T25HVG2-103B-A0004, 5.900*4.900 T25HVG2-103B-A0005 SAW 0.435*0.435 T25HVG2-103B-A V 1.402*1.900 T25HVG2-103B-A0008 LED open/short 1.700*1.300 T25HVG2-103B-A um T25HVG2-103B-A0010, 0.646* *2.300 T25HVG2-103B-A bit LED 1.500*1.250 T25HVG2-103B-A *0.900 T25HVG2-103B-A *1.161 T25HVG2-103B-A *1.850 T25HVG2-103B-A *0.868 T25HVG2-103B-A0022 T25HVG2-103B-A0023 T25HVG2-103B-A * * *1.453 T25HVG2-103B-E *1.200 T25HVG2-103B-I *

23 Wafer Mapping (IC ) SiGe18-103B IC ( )/ ( ) SiGe18-103B-A0001 SiGe18-103B-A0003 SiGe BiC- MOS Q 5/60 GHz 1.050* *1.625 SiGe18-103B-A0004 SiGe BiCMOS 0.624*0.996 SiGe18-103B-A GHz / 60 GHz 2.652*1.708 SiGe18-103B-A GHz 1.102*0.836 SiGe18-103B-A *1.500 SiGe18-103B-A *1.025 SiGe18-103B-A *1.400 SiGe18-103B-A0014 PCSNIM 2.4/5GHz 0.959*0.862 SiGe18-103B-A GHz 0.969*0.778 SiGe18-103B-A0018 Ku 1.296*0.855 SiGe18-103B-P Gb/ s 0.450*0.650 SiGe18-103B-P0002 K 0.850*0.475 SiGe18-103B-P0003 Ku 0.945*0.470 SiGe18-103B-E0001 (III) 0.511*

24 SiGe18-103B-E0002 ( ) 0.770*0.899 SiGe18-103B-E0004 ( ) 0.706*0.675 SiGe18-103B-E0005 ( ) 0.868*0.857 SiGe18-103B-E0006 ( ) 0.987*0.910 SiGe18-103B-E0007 ( ) 0.508*0.300 SiGe18-103B-E0008 ( ) 0.723*0.985 SiGe18-103B-E0009 ( ) 0.837*0.639 SiGe18-103B-E0010 ( ) 1.187*1.027 Wafer Mapping (IC ) 24

25 P15-103A ( )/ ( ) P15-103A-A *1.000 P15-103A-A0003 X 1.000*1.000 P15-103A-A GHz 1.000*1.000 P15-103A-A0005 K-Band 1.000*1.000 P15-103A-A GHz 1.000*1.000 P15-103A-A GHz 1.000*1.000 P15-103A-A *2.000 P15-103A-A *2.000 P15-103A-A0010 LNA phemt 2.000*1.000 P15-103A-A0011 峯 1.000*1.000 P15-103A-A0012 峯 1.500*1.000 P15-103A-P0001 PHEMT ISM 1.500*

26 Wafer Mapping (IC ) 26

27 TN40G-103A ( )/ ( ) TN40G-103A- P0001a TN40G-103A- P0002 TN40G-103A- P0003 TN40G-103A- P *2.064 THz 0.600*0.600, 6 2-bit * *0.496 Wafer Mapping (IC ) 27

NANO COMMUNICATION 23 No.3 90 CMOS 94/188 GHz CMOS 94/188 GHz A 94/188 GHz Dual-Band VCO with Gm- Boosted Push-Push Pair in 90nm CMOS 90 CMOS 94

NANO COMMUNICATION 23 No.3 90 CMOS 94/188 GHz 23 90 CMOS 94/188 GHz A 94/188 GHz Dual-Band VCO with Gm- Boosted Push-Push Pair in 90nm CMOS 90 CMOS 94/188GHz LC class-b 0.70 0.75 mm 2 pad 1 V 19.6 ma (ƒ