NANO COMMUNICATION 23 No.3 90 CMOS 94/188 GHz CMOS 94/188 GHz A 94/188 GHz Dual-Band VCO with Gm- Boosted Push-Push Pair in 90nm CMOS 90 CMOS 94

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1 NANO COMMUNICATION 23 No.3 90 CMOS 94/188 GHz CMOS 94/188 GHz A 94/188 GHz Dual-Band VCO with Gm- Boosted Push-Push Pair in 90nm CMOS 90 CMOS 94/188GHz LC class-b mm 2 pad 1 V 19.6 ma (ƒ o ) ~ 95.17GHz (2ƒ o ) ~ GHz dbm (ƒ o ) dbm (2ƒ o ) 1 MHz dbc/hz Abstract In this study, a 94/188 GHz Voltage Controlled Oscillator (VCO) was designed by a standard 90 nm CMOS technology. This study proposes a LC-VCO with a gm- boosted push-push pair. The gm-boosted push-push pair obtains the highest conversion efficiency using class-b amplifier. The circuit occupies a chip area of mm 2 including the output buffers and pads. At a supply voltage of 1 V and the supply current is 19.6 ma, the fabricated LC-VCO provides a frequency tuning range from GHz at the fundamental port (ƒ o ), and a frequency tuning range from 185.5~190.3 GHz at the push-push port (2ƒ o ). The circuit delivers a maximum output power of dbm (ƒ o ) and dbm (2ƒ o ) and the phase noise is dbc/hz at 1 MHz frequency offset..

2 4 24 Keywords CMOSLC CMOS VCO LC Source-degeneration Gm-boosted Push-push Pair (Silicon-based IC Manufacturing Technology) CMOS/ BiCMOS (Millimeter-wave (MMW)) 60-GHz 24/77- GHz (Automatic Cruise Control, ACC) 94-GHz ft VCO SiGe HBT InP HBT CMOS 0.13 m 90 nm 65 nm 40 nm 28 nm IC 77 GHz 94 GHz VCO [1-2] LC CMOS 1 NMOS 1 (a) (b) LC-tank NMOS NMOS

3 NANO COMMUNICATION 23 No CMOS 94/188 GHz 25 (LC-tank) LC [3] 1(b) [1] LC [3-8] 2(b) Zin Distributed LC L1=L2=L/2 C1=C2=C/2 Distributed LC LC 2(a) (a) LC (b) LC [1] 3 V ov V o i T 3 90nm CMOS DC RF pads 0.70

4 ~ dbm 4(c) 1 MHz to dbc/hz GHz 5(a) ~ GHz 5(b) ~ dbm 5(c) 1 MHz to dbc/hz FOM [4]: 4 (a) (b) (c) 0.75 mm 2 1V 19.6 mw 0.8V mw 5 (a) (b) (c) GHz 4(a) ~ 95.17GHz 4(b) L( ƒ) fo ƒ dbc/hz Pdc

NANO COMMUNICATION 23 No. 3 90 CMOS 94/188 GHz 27 mw 1 94/188 GHz CMOS W-band G-band FOM LC CMOS 92.73-95.17GHz 185.5-190.3 GHz 188 GHz 1 MHz -92.24 dbc/ Hz FOM -184.8 dbc/hz 1V 19.

5 NANO COMMUNICATION 23 No CMOS 94/188 GHz 27 mw 1 94/188 GHz CMOS W-band G-band FOM LC CMOS GHz GHz 188 GHz 1 MHz dbc/ Hz FOM dbc/hz 1V 19.6 mw W-band G-band 1 ] 9 [ [[1] Shu-Wei Chu and Chorng-Kuang Wang, An 80 GHz Wide Tuning Range Push-Push VCO With Gm-boosted Full-Wave Rectification Technique in 90 nm CMOS, IEEE Microwave and Wireless Components Letters, VOL. 22, NO. 4, APRIL [2] Ping-Chen Huang,An, A 131 GHz push-push VCO in 90-nm CMOS technology, 2005 IEEE Radio Frequency Integrated Circuits Symposium, pp , June [3] F. Tzeng, D. Pi, A. Safarian, and P. Heydari, Theoretical Analysis of Novel Multi-order LC Oscillators IEEE Trans. On Circuit and System-II: Express briefs, vol.54, pp , March [4] A. Hajimiri and T.H. Lee, Design Issues in CMOS Differential LC Oscillators, IEEE J Solid-State Circuits 34, , [5] Z.-M. Tsai, C.-S. Lin, C. F. Huang, J. G. J. Chern, and H.Wang, A Fundamental 90-GHz CMOS VCO Using New Ring-coupled Quad, IEEE Microw. Wireless Compon. Lett., vol. 17, no. 3, pp , Mar [6] P.-C. Huang, R.-C. Liu, H.-Y. Chang, C.-S. Lin, M.- F. Lei, H. Wang, C.-Y. Su, and C.-L. Chang, A 131- GHz Push-push VCO in 90-nm CMOS Technology, in IEEE Radio Frequency Integr. Circuits Symp. Dig, pp , Jun [7] C. Cao and K. K. O, 192 GHz Push-push VCO in 0.13 um CMOS, Electron. Lett., vol. 42, pp , Feb ( MOST E MY3. [8] K.-H. Tsai, L.-C. Cho, J.-H. Wu, and S.-I. Liu, 3.5mW W-Band Frequency Divider with Wide Locking,Range in 90nm CMOS Technology, ISSCC Dig. Tech. Papers, pp , Feb., 2008.

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