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1 LED 技術及應用發展新趨勢 洪盟淵晶元光電

2 Outline Overview of LED Industry LED Applications Roadmap to High Efficiency at Injection High Currents New Technology for Solid State Lighting - ACLED

3 Global and Taiwan LED Market Trends USD$M No.1 in Volume (Taiwan 38 %, Japan 27%) No.2 in Revenue (Taiwan 23%, Japan 37%) 30% % ,392 5,737 6,166 6,850 20% 15% % ,226 1,280 1,406 1,658 5% 0 年 (f) 2009(f) 2010(f) Worldwide LED Taiwan LED 全球 LED 產值我國 LED 產值全球 Worldwide LED 成長率 growth rate 我國 LED 成長率 market value market value 0% Taiwan growth rate Source : ITRI/IEK(2008)

4 Worldwide LED Market Outlook for M illio n (USD) Ele c.e q u ip / o th e r Illu m in a tio n Au to m o tive Sig n a l O th e r M o b ile M o b ile p h o n e Sig n s/ d isp la y Source:IEK(2009)

5 LED Notebook Backlight Demands In 2009, there will be around 63M of NB that will use LED backlight, assuming 40 LED in each LED backlight. -> a 40% penetration rate

6 Outline Overview of LED industry in Taiwan LED New Applications Roadmap to High Efficiency at Injection High Currents New Technology for Solid State Lighting - ACLED

7 LED LCDTV Market Penetration Equivalent to 63% of the total LED used in worldwide cell phones

8 LCD TV with LED Backlight 三星 LED 節能液晶電視 6 月來台上市 6.5mm thick

9 The Advantage of LED LCDTV

10 Historical Evolution for Solid State Technology

11 Government Policies in Driving SSL Taiwan Australia European Union Japan Canada California England Plan to replace the incandescent light bulb with LED lamp at 2009 Q1 in government buildings, and are not allowed to manufacture and use incandescent light bulb completely starting from 2012 Plan to ban the incandescent lamp after 2010 Plan to ban (producing and using) the incandescent lamp after 2010 The government announced at The incandescent light buibs will be completely phased out before 2012 Plan to ban using the incandescent lamp after 2012 will phase out the use of incandescent bulbs by Plan to eliminate incandescent lamp gradually by 2012

12 Business Model - Vertical Integration Solid State Lighting Chip Pkg Devices Osram Opto Lumileds Nichia Toyada Gosei Lexedis Cree- Cotco Module Applications Osram Sylvania Philips- TIR, PLI, Color Kinetics GE Lumination ZUMTOBEL Tridonic Acto

13 Retail Light Source Survey Type model - Incandescent MR-16 PAR PL 2 / 4 pin Fluorescent T8 T-5 T3-E27 CFL 2U-E27 T2-E14 LED MR-16 Lm/W W/Pkg Lm/Pkg* W/$ Lm/$* P.F Lifetime Color. T ~15 5~100 ~600 2~9 ~60 - ~1000 Warm 25~35(Xe) 20~50 ~500 1 ~20 - ~2000 Warm 6~15 50~150 ~ ~5 - ~2500 Warm 65~75 18~30 ~ ~9 ** >12000 Tunable 60~95 20~60 ~ ~1 ~30 ** 8000 Tunable 85~95 14~54 ~ ~0.13 ~8 ** Tunable 65~70 13~28 ~ ~10 57% 3000 Tunable 50~65 13~28 ~ ~10 57% 3000 Tunable 50~55 5~10 ~ ~0.0 8 ~3 ~55% 3000 Tunable 55~65 2~5 ~ ~0.3 - >20000 Tunable CRI >80 >85 >85 >80 ~70 >80 ~70 ~70 ~70 >75 * on average ** depends on ballast ** All price in NT$

14 LED Lighting Applications EverLight Street Light 13W LED Light Bulb MR16 Cree Down Light Module Delta Solar Street Light

15 Cost Analysis for Different Lighting Sources

16 光譜與植物發育的關係 光譜範圍 280~315nm 315~400nm 400~520nm( 藍 ) 對植物生理的影響對形態與生理過程的影響極小葉綠素吸收少, 影響光周期效應, 阻止莖伸長葉綠素與類胡蘿蔔素吸收比例最大, 對光合作用影響最大 色素的吸收率不高 520~610nm 610~720nm( 紅 ) 720~1000nm 葉綠素吸收率低, 對光合作用與光周期效應有顯著影響吸收率低, 刺激細胞延長, 影響開花與種子發芽轉換成為熱量

17 Epistar HB LED Product Line-up nm (Al X Ga 1-X ) y In 1-y P In X Ga 1-X N Mass Production DB BL 561nm PG nm 571nm YG 585nm SY nm 589nm YL BH nm 595nm AY BA nm 605nm YO BC nm 615nm SO/RO GL nm 624nm HR GH nm 631nm SR 639nm DR Pilot Run nm

18 Outline Overview of LED industry in Taiwan LED Applications Roadmap to High Efficiency at High Injection Currents New Technology for Solid State Lighting - ACLED

19 Efficiency Evolution of Light Sources Courtesy of Department of Energy, USA

20 Efficiency Roadmap (DOE) Courtesy of Department of Energy, USA Copyright 2009 by EPISTAR/R&D. All Rights Reserved

21 Luminous Efficiency Luminous Efficiency (lm/w) =η= pack x η phos x η elec xη int x η extract Where η pack : Packaging Efficiency (optics design) η phos : Phosphor Conversion Efficiency (phosphor design) η elec : Electrical Efficiency (V( f and injection efficiency) η int : Internal Quantum Efficiency (Epi layer design and quality) extract : Light Extraction Efficiency (LED chip structure and device design) η extract η ext = η int x η extract is the External Quantum Efficiency (EQE) Copyright 2009 by EPISTAR/R&D. All Rights Reserved

22 Efficiency Breakdown (Phosphor-Converting LED) Multi-Year Program Plan FY 09-FY 15 March 2009

23 How Achievable is 150 lm/w?

24 Improvement of Luminous Efficiency Internal Quantum Efficiency - droop issue Epitaxial quality Quantum well/barrier design Light Extraction Efficiency Light scattering/diffraction in or on the LED chip Reduce the absorption of the reflected/scattered light. Electric Efficiency Current spreading (crowding) Finger and Transparent Contact Metal Layer (ITO) Reduce forward voltage Phosphor Conversion Efficiency Packaging Efficiency Copyright 2009 by EPISTAR/R&D. All Rights Reserved

25 Droop Issue - Attributions Droop: External quantum efficiency drops as injection current increases. Droop attributions Phonon-assisted Auger Recombination - Philips Lumileds, OSRAM Piezoelectric (Polarization) effects in the quantum wells - RPI, Samsung Electro-Mechanics, Virginia Commonwealth Univ Non-radiative recombination - West Virginia University Defects Copyright 2009 by EPISTAR/R&D. All Rights Reserved

26 Device Design Approaches Better current spreading New transparent oxide Optimized contact finger design Thicker n-gan Better light extraction Surface texturing Interface light path design Reduce forward voltage, V f Increase p-gan doping concentration Reduce contact resistance Copyright 2009 by EPISTAR/R&D. All Rights Reserved

27 Power Chip Portfolio Venus-Series Generic Saturn-H Series p-pad ITO p-cladding Layer Active Layer n-cladding Layer n-pad p-pad ITO p-cladding Layer Active Layer n-cladding Layer n-pad p-pad ITO p-cladding Layer Active Layer n-cladding Layer n-pad Buffer Layer ESS Lambertian Reflector Bonding Layer Al 2 O 3 Substrate Al 2 O 3 Substrate AlN Substrate ITO on rough p-gan Leaf vein finger design ITO on flat p-gan ESS technology ITO on flat p-gan Lambertion reflector High k thermal substrate Separation of heat dissipation and current path Copyright 2009 by EPISTAR/R&D. All Rights Reserved

28 Evolution of Power Chip Performance ma 700 ma Efficiency Evoluation 100 lm/w EQE (%) lm/w Time Sequence V45 V45B V45C Generic SH50 Product Portfolio Copyright 2009 by EPISTAR/R&D. All Rights Reserved

29 Outline Overview of LED industry in Taiwan LED Applications Roadmap to High Efficiency at High Injection Currents New Technology for Solid State Lighting - ACLED

30 From Power to Illumination Most of the lighting source are powered by AC Power!!!

31 Worldwide Main Voltage & Frequency

32 From Light Bulb to LED Conventional Lighting AC Electricity Switch / Dimmer $$ Bulb / Lamp &η Conventional DCLED lighting AC Electricity Converter / Adapter AC Electricity Switch / Dimmer Control circuit LED driven via DC LED via AC B

33 Efficiency from AC Utility to DC Input AC 110~130V LUXEON Rebels 2 DC V: 7.6V I: 350mA Driver IC LM3445 source:

34 The ACLED Market Forecast (billion Japan Yen) Forecast by Japan 電波新聞 billion billion billion 10 (Forecast by EOL)

35 Innovation for LED Lighting: ACLED ACLED Circuit chip design Voltage V f time In a single chip V f AC LED chip works under high voltage driven directly. No additional rectifier or adapter need. The area size and the numbers of microchips (cells) decide the driving voltage and power.

36 Circuit Layout Diode Rectifier Principles Behind AC-Driven LED (Seoul Semiconductor) Bridge Rectifier (ITRI, Epistar) Rectifying diode / LED Copyright 2009 by EPISTAR/R&D. All Rights Reserved

37 Principles Behind AC-Driven LED Operation Point for DCLED is static V I I v 1 I 1 Q I 1 t v 1 V i-v transfer function of diode t Constant voltage Constant current Operation Point for ACLED is dynamic V I v 2 I 2 I I 2 v 1 t I 1 t I 1 v 1 v 2 V i-v transfer function of diode Alternating sinusoid voltage Alternating non-sinusoid current

38 Principle Behind AC-Driven LED I-V Characteristics of AC LED P optical & P electric -I Characteristics of AC LED Power Factor Real Power: Preal Apparent power: 1 = V( t) I( t) dt T apparent rms rms Power factor is the ratio of the real power to apparent power: The PF of AC LED is 0.8~0.9 T 0 P = V I P P. F. = real P apparent Voltage Current Time Copyright 2009 by EPISTAR/R&D. All Rights Reserved How to increase the PF?? 1. Increase the cell number 2. Reduce the operation current 3. Add resistor

39 Adding a resistor Solutions for Power System Variations I exp { V } I V I V Adding a Capacitor V rms V V t Copyright 2009 by EPISTAR/R&D. All Rights Reserved

40 Seoul Semiconductor ACLED 外觀 DC 下的近場 等效電路 (Diode rectifier type) 優點 每一顆逆向 LED 所承受的逆向偏壓是一樣的 不需考慮恆時發亮區及整流區的面積比例問題, 設計較為單純 Copyright 2009 by EPISTAR/R&D. All Rights Reserved

41 ACLED Chip Performances (Customer Packaging Data) Product Type: ES-RD-AC110V-A55-28L-3 (Bin 03) 10mA (without resistor): Wld: ~ 90 V ~ nm PS:1. LITEON 2. No Resistor 3. η is estimated Name X Y Lumen CCT I V Efficiency No./Unit lm K Irms Vrms lm/w Bin ES-RD-AC110V-A55-28L Driving Voltage : 110V (rms) Driving Current : 12mA (rms) Resister (Ω) ± 80 (Ω) Min Max Avg StdDev Copyright 2009 by EPISTAR/R&D. All Rights Reserved

42 ACLED Family Power Consumption ES-CE CE AC99 110V 4W ES-CE CE AE47 ES-CE CE AC55 ES-CE CE AD55 (under develop) 32V 0.7W 110V / 220V 1W Driving Voltage Copyright 2009 by EPISTAR/R&D. All Rights Reserved

43 Lower Cost Approach: ACLED 480 4W ~47 lm/ USD (if 4 chip per package) DCLED USD$0.6~ DOE Target Driver IC USD$ 2.0 Other component USD$ 4.0 MCPCB USD$ 1.0 Package Fixture USD$ 0.3 USD$ 0.5 Efficiency~80% EPI 490 4W ~90 lm/ USD (if 4 chip per package) ACLED USD$0.9~ Target MCPCB USD$ 1.0 Package Fixture USD$ 0.3 USD$ 0.5 P.F. ~ 95% Note: The cost of LED chip are only for reference because it depended on performance and chip size.

44 Use AC55 to form Lamps 4W AC LED 6W AC LED 15W AC LED Type AC LED Module LED AC55 (1W) X 4 AC55 (1W) X 6 AC55 (1W) X 15 Luminous Flux 230 lm 350 lm K Luminous Flux 160 lm 250 lm K Copyright 2009 by EPISTAR/R&D. All Rights Reserved

45 Vision With LED Lighting Up the World Through Diode Emitting Photograph: NASA

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