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仙鼠水
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1 SiC th Meeting on SiC and Related Wide Bandgap Semiconductors (Technical Program) (November 10, Thursday) 10:00-10:10 (Opening Address) (Plenary) 10:10~11:20 10:10 I-1 Shallow and Deep Defect Levels in SiC (Invited) G. Pensl 1, T. Frank 1, S. Reshanov 1, F. Schmid 1, and M. Weidner 1, T. Ohshima 2, and H. Itoh 2 ( 1 University of Erlangen-Nürnberg, Germany, 2 Japan Atomic Energy Agency, Japan) 10:45 I-2 Micropipe-Free Single Crystal Silicon Carbide (SiC) Ingots via Physical Vapor Transport (PVT) (Invited) C. Basceri, I. Khlebnikov, Y. Khlebnikov, P. Muzykov, M. Sharma, G. Stratiy, M. Silan, and C. Balkas (INTRINSIC Semiconductor Corp., USA) SiC (SiC Growth) 11:25~12:40 11:25 II-1 SiC Dislocation Behavior in SiC Bulk Single Crystals (Invited) 11:55 II-2 SiC-CVD Numerical Modeling of SiC-CVD (Invited) 1 Michel Pons LTPCM/INPG 12:25 II-3 4H-SiC(0001), (000-1) basal plane, (P-6) Comparison of Propagation and Nucleation of Basal Plane Dislocations in 4H-SiC{0001} Epitaxy ,2 2 1 ( ) 2 12:40-14:00 (Lunch) i

2 (Future Prospects) 14:00~15:00 14:00 III-1 SiC Prospects of SiC Power Devices (Invited) 14:30 III SiC Market Analysis for Material, Components and Applications (Invited) P. Roussel (Yole Development, France) 15:00-15:15 (Break) (Poster Session) 15:15~17:45 15:15~16:30 (P-1, P-3, P-5,,, P-79) 16:30~17:45 (P-2, P-4, P-6,,, P-78) SiC P-1 Si-C-(Co, Fe SiC Growth of SiC Single Crystal from Si-C-(Co, Fe) Ternary Solution P-2 4H-SiC{03-38} SiC Growth of Micropipe Free Crystals on 4H-SiC {03-38} Seeds P-3 High Quality SiC Crystals Grown by the Physical Vapor Transport Method with a New Crucible Design Jung-Doo Seo, Kap-Ryeol Ku, Jung-Gyu Kim, Ju-Young Lee, Myung-Ok Kyun, Won-Jae Lee, Geun-Hyoung Lee, Il-Soo Kim, Byoung-Chul Shin (Dong-Eui University, Electronic Ceramics Center, Korea) P-4 CVD Development of Practical High-Rate CVD Machine P-5 SiC Control of Dislocations during SiC Homoepitaxial Growth P-6 4H-SiC(0001), (000-1) basal plane, Comparison of Propagation and Nucleation of Basal Plane Dislocations in 4H-SiC{0001} Epitaxy ,2 2 1 ( ) 2 ii

3 P-7 4H-SiC Influence of Ion Implantation Layer on 4H-SiC Epitaxial Layer P-8 SiC Epitaxial Growth of SiC Using Hydrogen Chloride P-9 {0001}4H-SiC Epitaxial Growth of 4H-SiC{0001} with Large Off-Angles P-10 4H-SiC (0001) Epitaxial Layers Grown by Sublimation Method Using Horizontal Furnace Chi-Kwon Park, Joon-Ho An, Won-Jae Lee, Byoung-Chul Shin and Shigehiro Nishino (Dong-Eui University, Korea) P-11 3C-SiC LPE SiC LPE Growth of 3C-SiC Single Crystal Using Cold-Crucible P-12 Si C-SiC Dependence of Stacking Fault and Twin Densities on Deposition Conditions during 3C-SiC Heteroepitaxial Growth on Si Substrates P-13 Cat-CVD µc SiC Low Temperature Growth of Microcrystalline SiC by Catalytic CVD from Monomethylsilane P-14 3C-SiC Epitaxial Growth of 3C-SiC by Reactive Sputtering ( ) SiC P-15 4H-SiC The Evaluation of 4H-SiC Substrate by Schottky Barrier Rectifiers SiXON P-16 (EBIC ) SiC Evaluation of Defects in SiC Epilayer Using Electron-Beam-Induced Current Method iii

4 P-17 KOH 4H-SiC(000-1) Observation of Defects on 4H-SiC (000-1) Face Using Molten KOH Etching Method P-18 SiC Observation of Defects in SiC Single Crystals Using by Infrared Light Scattering Tomography Wutimakun Passapong P-19 SiC{0001} Identification of Surface Polarity of SiC {0001} Face by DUV Raman Scattering P-20 SiC Numerical Simulation of Deep-Ultraviolet Raman Spectrum in SiC P-21 SiC Characterization of Electrical Properties of SiC Epi-layer Using Infrared Reflectance Spectroscopy P-22 DLTS p 4H-SiC Deep Levels in As-Grown P-type 4H-SiC Epilayers Investigated by DLTS P-23 Deep Levels Related to Carbon Displacements in n- and p-type 4H-SiC L. Storasta, I. Kamata, T. Nakamura and H. Tsuchida P-24 SiO2/SiC Characterization of SiO2/SiC Interfaces by Spectroscopic Ellipsometer Extension to UV Region P-25 In-situ SiC Real Time Observation of SiC Oxidation Using an In-situ Ellipsometer P-26 SiO2/4H-SiC(0001) Dynamical Simulation of SiO2/4H-SiC(0001) Interface Oxidation Process: from First-Principles 1, 2, 1, 2, 1, iv

5 P-27 SiO2/SiC Generation of Amorphous SiO2/SiC Interface by the First-Principles Molecular Dynamics Simulation 1, P-28 PAW SiC First-Principles Calculations of Schottky-Barrier Heights of SiC Interfaces by PAW Method SiC P-29 CVM SiC Characteristics of SiC Surface Processed by Plasma CVM (Chemical Vaporization Machining) P-30 4H-SiC(0001) Catalyst Assisted Chemical Polishing of 4H-SiC (0001) P-31 SiC Surface Roughness of Ion Implanted 6H/4H-SiC Using High Pressure Atmospheric Annealing P-32 Al H-SiC EBAS Investigation of Properties for Post Al-Implanted 4H-SiC Annealing by EBAS P-33 DLC 4H-SiC Encapsulated Annealing of N + -Implanted 4H-SiC With DLC Film P-34 3C-SiC Electrical Properties of N + -Implanted 3C-SiC P-35 SiC Improvement in Reliability of Thermal Oxide Grown on 4H-SiC Wafer Using Atomic Hydrogen Radical Irradiation v

6 P-36 4H-SiC(0001) SiO2 CV Evaluation of SiO2 Thin Films Deposited on 4H-SiC(0001) Substrates by Capacitance-Voltage Method P-37 NO CVD 4H-SiC MOS Interface Properties of 4H-SiC MOS Structure with NO-Annealed CVD Gate Oxide P-38 MOCVD HfO2/4H-SiC Low Temperature Deposition of HfO2 on 4H-SiC and Characterization of the Interface Property P-39 GaN/SiC HBT GaN Study on GaN Selective Etch for GaN/SiC HBT Process SiC P-40 4H-SiC(0001) (000-1) Large Active Area Schottky Barrier Diode on 4H-SiC(0001) and (000-1) P-41 SiC-SBD Damage Creations due to Heavy Ion Irradiation in SiC-SBD P-42 4H-SiC Ultra-Low Von and High Voltage 4H-SiC Heterojunction Diode P-43 4H-SiC(000-1) pin Faburication and Evaluation of 4H-SiC (000-1) pin Diode 1, P-44 6H-SiC n + p Oxygen and Silicon Ion Beam Induced Current in 6H-SiC n + p Diodes P V, 1.01mΩcm 2 SiC-SIT (BGSIT) Development of 700V, 1.01mΩcm 2 SiC-SIT with Buried Gate (BGSIT) vi

7 P V SiC FET Fabrication of Normally-off 600 V SiC Junction FET P-47 4H-SiC RESURF JFET Fabrication of Multichip Module of 4H-SiC RESURF Type JFET P-48 Si/4H-SiC Novel Power Si/4H-SiC Heterojunction Tunneling Transistor (HETT) P-49 4H-SiC MOSFET Characterization of 4H-SiC MOSFETs Formed on the Different Trench Sidewalls P-50 (11-20) MOS MOSFET The Characteristics of the MOSFETs Fabricated on the Trench Sidewalls of Various Faces Using 4H-SiC (11-20) Substrates P-51 DMOSFET Fabrication of DMOSFETs by the High-Temperature Rapid Thermal Oxidation and Nitridation Using the Cold-Wall Furnace P-52 4H-SiC p-channel MOSFET 4H-SiC p-channel MOSFET with High Channel Mobility P-53 4H-SiC RESURF MOSFET Reduction of On-Resistance in 4H-SiC Multi-RESURF MOSFETs P-54 4H-SiC MESFET RF RF Characteristics of Fully Ion Implanted MESFET in Bulk Semi-Insulating 4H-SiC Substrate P-55 Scaling Law for Power Devices and Figure of Merit based on Scaling Law vii

8 P-56 The Novel Figure of Merit and Power Loss Comparison in Semiconductor Materials for Power Converter P-57 Si-CoolMOS SiC-SBD 3kW-3 PWM Trial Design for High Power Density PWM Converter with Si-CoolMOS and SiC-SBD P-58 4H-SiC(0001) AlGaN/GaN HEMT rf-mbe Growth of AlGaN/GaN HEMT Structure on 4H-SiC(0001) Vicinal Substrates by rf-plasma Assisted MBE 1, P-59 RF-MBE AlN/GaN HEMT Fabrication and Characterizations of HEMT Structure Using AlN/GaN Super-Lattice by RF-MBE 1 2 K. Jeganathan P-60 TEM AlN Observations of the Reduction of TDs in AlN on Vicinal Sapphire Substrates by TEM P-61 Si GaN Defect Characterization of Si-Doped GaN Films by a Scanning Near-Field Optical Microscope-Induced Photoluminescence Using an Ultra Violet Laser and by High Spatial Resolution Cathodoluminescence Spectroscopy M. Yoshikawa, S. Sugie, M. Murakami, T. Matsunobe, K. Matsuda, and H. Ishida (Toray Research Center Inc.) P-62 DLTS GaN MOCVD GaN DLTS Study of Electron Traps in MOCVD GaN Grown on Bulk GaN P-63 DLTS p GaN Characterization of Deep Level in p-gan by Current DLTS viii

9 P-64 ICP GaN Relationship between Surface Band Bending and Carrier Lifetime of GaN Etched by ICP P-65 Mg GaN Enhancement of Blue Emission from Mg-Doped GaN by Water Vapor Plasma Treatment P-66 AlGaN/GaN HEMT Study of Low Specific On-Resistance AlGaN/GaN HEMT P-67 AlGaN/GaN HEMT Study of Normally-OFF AlGaN/GaN HEMT P-68 AlGaN/GaN MIS-HEMT Study of High Breakdown Voltage AlGaN/GaN MIS-HEMT P-69 AlGaN/GaN HFET SiNx Investigation of Film for Low Gate Leakage of AlGaN/GaN HFET P-70 Ti/Al-Si/Mo AlGaN/GaN HFET Low-On-Resistance of AlGaN/GaN HFET Using Ti/Al-Si/Mo Ohmic Electrode P-71 AlGaN/GaN AlGaN/GaN Schottky Barrier Diode with a High Breakdown Voltage P-72 Si GaN MESFET Double-Ion-Implanted GaN MESFETs with Low Source/Drain Resistance ix

10 P-73 Si AlGaN/GaN HEMT Characteristics of AlGaN/GaN HEMTs on Si Substrates P-74 AlGaN /GaN MIS HFET A Study of Vertical Device Operation of MIS Type AlGaN/GaN Heterostructure Field Effect Transistor P-75 GaN p-n Breakdown Characteristics of p-n Junction Diodes Fabricated on a GaN Standing Substrate P-76 ZnO Analysis of ZnO by Cathodoluminescence and Raman Spectroscopy P-77 ZnO Synthesis of Spintronics Materials Based on ZnO and Study on Their Characterization P-78 SiC Raman Spectra from Single Walled Carbon Nanotubes Grown on SiC Substrates P-79 Surface Conditioning for Compound Semiconductor Substrate and Various Metal Surface by Using Ozonated Water 18:30~20:30 (Reception) x

11 (November 11, Friday) (Characterization) 9:30~11:45 9:30 V-1 ESR SiC ESR Characterization of Point Defects in SiC (Invited) 10:00 V-2 SiC Characterization of SiC Wafers by Room-Temperature Photoluminescence Mapping (Invited) JAXA 2 10:30 V-3 SiC Observation of Defects in SiC Using Non-Destructive Evaluation Techniques (Invited) 11:00 V-4 4H-SiC (P-15) The Evaluation of 4H-SiC Substrate by Schottky Barrier Rectifiers SiXON 11:15 V-5 Deep Levels Related to Carbon Displacements in n- and p-type 4H-SiC (P-23) L. Storasta I. Kamata T. Nakamura and H. Tsuchida 11:30 V-6 DLTS GaN MOCVD GaN (P-62) DLTS Study of Electron Traps in MOCVD GaN Grown on Bulk GaN :45-13:00 (Lunch) (13:00~13:10) SiC (SiC Devices) 13:10~14:40 13:10-1 SiC MOSFET, JFET Ultra Low Loss SiC MOSFET and JFET (Invited) xi

12 13:40-2 SiC SBD (Super-SBD) SiC Floating Junction Schottky Barrier Diode (Super-SBD) (Invited) 14: V SiC FET (P-46) Fabrication of Normally-Off 600 V SiC Junction FET :25-4 Si/4H-SiC (P-48) Novel Power Si/4H-SiC Heterojunction Tunneling Transistor (HETT) 14:40-15:00 (Break) GaN (GaN Devices) 15:00~16:30 15:00-1 AlGaN/GaN HFET SiNx (P-69) Investigation of Film for Low Gate Leakage of AlGaN/GaN HFET 15:15-2 AlGaN/GaN MIS-HEMT (P-68) Study of High Breakdown Voltage AlGaN/GaN MIS-HEMT :30-3 GaN Recent Advances in GaN Power Devices (Invited) 16:00-4 III-Nitride Microwave Power Devices (Invited) 16:30-16:40 (Closing Remarks) xii

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微纳电子技术编辑部厦门创新众人会议服务有限公司三会议地点 : 厦门杏林湾大酒店厦门市集美区杏滨路 301 号, 近杏林大桥引桥旁距厦门高崎机场约 12 公里, 距厦门北站约中国半导体行业协会半导体分立器件分会中半器协 [2015]005 号 2015 全国新型半导体功率器件及应用技术研讨会第二轮通知自 2015 年 7 月 1 日中国半导体行业协会以中半器协 [2015]003 号文发出 2015 全国新型半导体功率器件及