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沁势狄
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2 ECM ECM I max V max -V knee P out I max (V max -V knee ) HPMHigh High Power Mirowave FCS V knee Vmax 4 6 GaAs SiGe II-VI ZnSe,ZnS, CdS III-V GaAs, GaP,GaN IV-IV SiC, SiGe 5 7

3 GaN 4H-SiC 6H-SiC GaAs Si (W/cmK) BM : E BHFM : E : =0.42 a=4.76c= v 2 (10 7 cm/sec) 1 E(KV/cm)InP GaAs Si GaN GaAs135 GaAs10 GaAs2.4 GaAs2.6 GaAs3/4 (As) LEDLD 9 11

4 GaNHEMT GaN-HEMT (Ti/Al/Ni/Au) (Ni/Au) n-algan UD-GaN (3.0um) undopeal0.3ga0.7n(50a) (Ti/Al/Ni/Au) n-al0.3ga0.7n (5E18cm-3, 100A) UD Al0.3Ga0.7N(30A) UD-GaN 1.2eV n-algan Ec Ev UD-GaN (0001) or SiC AlN GaAs (111) AlGaN I max V max -V knee P out I max (V max -V knee ) GaAs GaN I max GaN GaAs GaAs56 V knee V knee V max V max V max V max I max I max P out P out 13 15

SiGaN GaAs-FET Infrastructure GaAs-FET Handheld GaAs-FPFET GaN-HEMT SiC-FET LDMOS GaN 16 18 2.6 2.6 NEC Y.

5 SiGaN GaAs-FET Infrastructure GaAs-FET Handheld GaAs-FPFET GaN-HEMT SiC-FET LDMOS GaN NEC Y. Okamoto, et al IEEE MTTS Int. Microwave Symp. Pulsed output power Vd=50V Breakdown Voltage 1mA/mm 17 19

6 Mitsubishi Y. Kamo, et al IEEE MTTS Int. Microwave Symp. XWFET Pulsed output power Vd=40V Breakdown Voltage 1mA/mm XWFET(GaN) CW output power Breakdown Voltage 20 Pout (dbm), Gain (db) pulse ;width=20μs, duty = 2.5% W g =46.08mm f=6.0ghz V ds =+25V Pout 13.2dB Gain 174W PAE 34.7% P in (dbm) PAE ( % ) Pout (dbm), Gain (db) CW W g =46.08mm f=6.0ghz V ds =+22V Pout 10.2dB Gain 89W PAE 31.1% Pin (dbm) PAE ( % ) WFET (GaN) WFET (GaN) GHz Pulsed output power Vd=V Breakdown Voltage 21.5mm12.9mm 21 23

7 GaN GaN GaN 2 DARPA X 1998 Nitres(UCSB) GaNPA 2000 Cree(SiC Nitres Cree Lighting GaNPA NitronexNorth Carolina State Univ. RF-NitroHughes Electronics and Cornell Univ Nitronex GaN on Si PA RF-Nitro GaNPA RF Micro DevicesTRW GaAs HBT for CDMA RF-Nitro(2001) 2002 DARPA WBG Technology Initiative Microsystem Integration TriQuint GaNPower Amp. Cree ATMI(2003) NitronixCreeRF Micro DeviceRFHICLS 25 27

8 EU BRITE-EURAMMIGHT-Project ESPRIT MarconiThomas SwanThomson CSF CNRSInfineon Daimler-Chrysler Picoiga International, Nottingham, Ghent IMEC Ulm, Fraunhofer Institute Ka LSWiMAX Cree pulse TSB pulse pulse CW pulse CW CW Eudyna CSICS CW CW Frauhofer Rockwell Rockwell NEC 1998 GaAs NTT SONY NEDO 2002 NEC PJ SCFET CW XW L/SFET 29 GaN 31

GaN GaN Evaluation of Substrate Quality DC 32 Surface

image Superimposed fabricated device Box plot of gate

International Conference on Compound Semiconductor

concentrated area A and B Gate leakage current devices

9 GaN GaN Evaluation of Substrate Quality DC 32 Surface morphology of epi HEMTs on 2 inch epitaxial wafer image Superimposed fabricated device Box plot of gate leakage current comparing A, B area and other area Presented by K. Matsushita, et al. (Toshiba Corp) at COMPOUND SEMICONDUCTOR MANTECH 2005 International Conference on Compound Semiconductor MANufacturing TECHnology New Orleans, Louisiana, U.S.A. Microscope Image of concentrated defect area Defects concentrated area A and B Gate leakage current devices are showninsquare. April 11-14, 14, 2005 Improving an epitaxial layer quality is critically important to realize target devices

10 Vd_stress70V Vd_stress100V GaN SX W/cm W/cm 2 80 W/cm 2 Pentium4 GaN 3800 W/cm2 W/cm 2 C70W 600W/cm W/cm 2 110W/cm W/cm 2 37 GaN 39

11 40 GaN GaAs0 GaN 41 48GHz 8GHz 100W 100W X/Ku X/Ku 818GHz 18GHz 50W 50W GaAs 2GHz GaN GaN 42 43

12 ~GHGH~ X Ku Ku C WFET C WFET X WFET X WFET WFET WFET 45 47

50 C-Band 500W SSPA 90W GaAs FET 64pcs in final

13 49.6dBm(91W) 57.49dBm(561W) 40.5% 15.1% Input/Output characteristics of the 90W FET C-Band 500W SSPA 90W GaAs FET 64pcs in final stage for 3.5kW Transmitter 5.4GHz 49 51

XWFETTGI8596-50) 50) F E A T U R E S HIGH POWER BROAD BAND INTERNALLY MATCHED HEMT Pout=47.0dBm at Pin=41.

6GHz RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C ) CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX. Output Power at Pin=41dBm Pout dbm 46.

8 Power Added Efficiency η add % 35 Channel Temperature Rise Δ Tch (VDS X IDS + Pin Pout)X Rth(c-c) C 110 PACKAGE OUTLINE ( 7- AA04A ) Unit in

14 XWFETTGI ) 50) F E A T U R E S HIGH POWER BROAD BAND INTERNALLY MATCHED HEMT Pout=47.0dBm at Pin=41.0dBm HERMETICALLY SEALED PACKAGE HIGH GAIN GL=9.0dB at 8.5GHz to 9.6GHz RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C ) CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX. Output Power at Pin=41dBm Pout dbm Liner Gain GL db V DS=24V Drain Current IDS1 f=8.5to9.6ghz A 4.5 TBD Gain Flatness Δ G db ± 0.8 Power Added Efficiency η add % 35 Channel Temperature Rise Δ Tch (VDS X IDS + Pin Pout)X Rth(c-c) C 110 PACKAGE OUTLINE ( 7- AA04A ) Unit in mm Gate 19inch 2 19inch 1 Smaller MoreMore reliable Reduced occupied frequency bandwidth Source Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260 C C X WFET WFET Bm Pout=50W WFET 12.9 A, A 21.5 Bm 53 55

15 (11 (11 GaN X500MHz 250W 25dB +35V-5V 150mm150mm45mm GaAsGaN X500MHz W NF 5dB DC48V 214mm450mm153mm C X WFET WFET WFET 57 59

Tokyo Tech Template

Tokyo Tech Template 2.4GHz CMOS PA,,, 2010/07/21 Contents 1 Introduction 2 PA (Power Amplifier) 2.4GHz : WiMAX, WLAN, Bluetooth Introduction 3 Capacitive cross-coupling Self-biased cascode Schematic 4 Out V DD 2 : 1 V DD