LED Mu-Tao Chu 1
LED LED LED 2
LED LED LED LED100 lm/w LED 2015LED~30% 400LEDLED DOE LED Source: Solid-State Lighting Research and Development: Multi-Year Program Plan, March 2011, DOE LED LED LED OEMODM LED LED LED 2012LED LED 3
LED 208 lm/w (350 ma) 132 lm/w (350 ma) Cree Nichia Osram (2010) Epistar 163 lm/w (350 ma) 249 lm/w (20 ma) 130 lm/w (350 ma) 142 lm/w (350 ma) 120 lm/w (350 ma) 150 lm/w (350 ma) 160 lm/w (HV@1W, 2700K) 120 lm/w (350 ma) 110 lm/w (HV@1W, 2700K) Move to 2012-13 : Epistar Source : McKinsey 2010 130lm/W 130lm/W2015~200lm/W DOE DOE2-3 4
LED : droop : binning yield ( ) : : : : : droop LED($/lm),, (lm/w). 5
LED 6
: LEDGaNSi 8 GaN on Si GaN on Si 8 SiPorous SiNC buffer layerlt AlN interlayer AlGaN graded layerstraingan LED 8 MOCVD The The cost cost of of 8 Si 8 Si will will be be 1/10 1/10 of of sapphire s sapphire s @ 2015. 2015. 8 8 is is the the most most efficient efficient process process size size for for LED LED equipment. equipment. + + SixNyCz layer as strain released nucleation layer nano-rods as strain released layer patterned Si substrate (current result: crack free 4.2 um GaN on 2 patterned Si ) 7
MOCVD Color Binning Cold wall outlet Osram Opto, white LEDs has 120 bins showerhead wafer wafer holder LED binning problem: -Flow field -Heat field outlet Defect gettering center Catalyst assist process Pre-strained InGaN/GaN layer Polarization-matched AlGaInN quantum barriers 8
-LED -LED -LED arrayacled LED( )LED TV(VLC) ACLED (VLC) HMD LED -LED array: TV (3D) Dice Projection Sony CrystalLED TV 9
Dice projection Dice projector: Emissive Imager (-LED) + Projection Lens (direct projection) Regular projector: Illumination + optics + passive imager + projection lens Pixel of RGB -LED array for dice projector Dice : microled chip Dice 3M V.S. 1. 2. -LED array (>40 lm/w)(~ 1cm 3 ) 10
A19 LED : X X = 0.95 X 0.92 X 0.9 = 0.78 k=3~4w/mk 60W 100g 调 热 LED Product Weight (g) Light Distribution Angle Luminous (lm) Wattage (W) CRI CCT (K) P-Company 180 300 800 12.5 80 2700 E-Company 180 120 800 8 80 2700 ITRI 100 >300 820 9.8 80 2700 11
Thin-Film LED Motivation N-electrode MQW mirror 3 2 carrier substrate 1 Key Factors: 1. Improving Thermal Resistance 2. Maintaining the Mirror Structure 3. Reducing the Area of Top metal Shielding 12
Thin-Film LED (TFP) : EQE CCT Low Profile TFP wire-bond TFP Improved thermal droop 30 Improved light extraction 6 5 14-mil TFP 25 TFP with wire TFP without wire Intensity(a.u.) 4 3 2 1 14-mil faceup LED Intensity (a.u.) 20 15 10 5 0 0 0 10 20 30 40 50 60 70 80 90 100 0 100 200 300 400 500 600 700 800 900 1000 Current(mA) Current(mA) Due to shortest thermal path design, in 14-mil device size, TFP has higher saturation current of 800mA than conventional face-up LED of 250mA. With no light-shading electrode design, TFP has higher luminous intensity than TFP with conventional wire-bond structure. This is owing to more Copyright uniform 2012 current ITRI spreading and higher light extraction. 13
: CS/PCRICCT 2011 CRI>80 CCT 2500 6500K C/P 0.6 1.8 LED Muti chips+ic+ LED: *2$/Klm *No Binning *No PWM Dimming * LED: *CS() *(Unified Vision) sensor 2013 2015 sensor ++ database+ LED *LED *LED NBI *LED 14
: (1) LED / / LED LED LED LED () () UV () () (2) LED (3) LED (4) LED 15
LED / / UV / / / / / / 16
GaN on Si LEDLED LED LEDLED LEDLEDLED LED100 (750CO 2 ) LED 17
Thank You 18