2007 1 GaN Copyright 2007, Toshiba Corporation. 2 GaN ( SSPA 1 3
ECM ECM I max V max -V knee P out I max (V max -V knee ) HPMHigh High Power Mirowave FCS V knee Vmax 4 6 GaAs SiGe II-VI ZnSe,ZnS, CdS III-V GaAs, GaP,GaN IV-IV SiC, SiGe 5 7
GaN 4H-SiC 6H-SiC GaAs Si (W/cmK) BM : E BHFM : E : =0.42 a=4.76c=12.99 4 3 v 2 (10 7 cm/sec) 1 E(KV/cm)InP GaAs Si GaN 0 50 100 150 8 10 GaAs135 GaAs10 GaAs2.4 GaAs2.6 GaAs3/4 (As) LEDLD 9 11
GaNHEMT GaN-HEMT (Ti/Al/Ni/Au) (Ni/Au) n-algan UD-GaN (3.0um) undopeal0.3ga0.7n(50a) (Ti/Al/Ni/Au) n-al0.3ga0.7n (5E18cm-3, 100A) UD Al0.3Ga0.7N(30A) UD-GaN 1.2eV n-algan Ec Ev UD-GaN (0001) or SiC AlN GaAs56 12 14 (111) AlGaN I max V max -V knee P out I max (V max -V knee ) GaAs GaN I max GaN GaAs GaAs56 V knee V knee V max V max V max V max I max I max P out P out 13 15
SiGaN GaAs-FET Infrastructure GaAs-FET Handheld GaAs-FPFET GaN-HEMT SiC-FET LDMOS GaN 16 18 2.6 2.6 NEC Y. Okamoto, et al. 2005 IEEE MTTS Int. Microwave Symp. L @4GHz Pulsed output power 150W @ Vd=50V Breakdown Voltage >200V @ 1mA/mm 17 19
Mitsubishi Y. Kamo, et al. 2005 IEEE MTTS Int. Microwave Symp. XWFET (GaN) @5GHz Pulsed output power 140W @ Vd=40V Breakdown Voltage 160V @ 1mA/mm XWFET(GaN) 21.5mm12.9mm @9.5GHz CW output power W @Vd=V Breakdown Voltage >V @1mA/mm 20 22 @6GHz Pout (dbm), Gain (db) 60 50 40 30 20 10 0 pulse ;width=20μs, duty = 2.5% W g =46.08mm f=6.0ghz V ds =+25V Pout 13.2dB Gain 174W PAE 34.7% 0 10 20 30 40 50 P in (dbm) 100 80 60 40 20 0 PAE ( % ) Pout (dbm), Gain (db) 60 50 40 30 20 10 0 CW W g =46.08mm f=6.0ghz V ds =+22V Pout 10.2dB Gain 89W PAE 31.1% 0 10 20 30 40 50 Pin (dbm) 100 80 60 40 20 0 PAE ( % ) WFET (GaN) WFET (GaN) W @ GHz Pulsed output power W @ Vd=V Breakdown Voltage >V @1mA/mm 21.5mm12.9mm 21 23
GaN GaN 24 26 GaN 2 DARPA X 1998 Nitres(UCSB) GaNPA 2000 Cree(SiC Nitres Cree Lighting GaNPA NitronexNorth Carolina State Univ. RF-NitroHughes Electronics and Cornell Univ. 2001 Nitronex GaN on Si PA RF-Nitro GaNPA RF Micro DevicesTRW GaAs HBT for CDMA RF-Nitro(2001) 2002 DARPA WBG Technology Initiative Microsystem Integration 20032004 TriQuint GaNPower Amp. Cree ATMI(2003) 20052007 NitronixCreeRF Micro DeviceRFHICLS 25 27
EU BRITE-EURAMMIGHT-Project ESPRIT MarconiThomas SwanThomson CSF CNRSInfineon Daimler-Chrysler Picoiga International, Nottingham, Ghent IMEC Ulm, Fraunhofer Institute Ka LSWiMAX Cree pulse TSB pulse pulse CW pulse CW CW Eudyna CSICS CW CW Frauhofer Rockwell Rockwell 28 30 NEC 1998 GaAs NTT SONY NEDO 2002 NEC 20022007 PJ SCFET CW XW L/SFET 29 GaN 31
GaN GaN Evaluation of Substrate Quality DC 32 Surface morphology of epi HEMTs on 2 inch epitaxial wafer image Superimposed fabricated device Box plot of gate leakage current comparing A, B area and other area Presented by K. Matsushita, et al. (Toshiba Corp) at COMPOUND SEMICONDUCTOR MANTECH 2005 International Conference on Compound Semiconductor MANufacturing TECHnology New Orleans, Louisiana, U.S.A. Microscope Image of concentrated defect area Defects concentrated area A and B Gate leakage current devices are showninsquare. April 11-14, 14, 2005 Improving an epitaxial layer quality is critically important to realize target devices 34 33 35
Vd_stress70V Vd_stress100V GaN SX45 36 38 4 W/cm 2 110 W/cm 2 80 W/cm 2 Pentium4 GaN 3800 W/cm2 W/cm 2 C70W 600W/cm 2 3800W/cm 2 110W/cm 2 1300W/cm 2 37 GaN 39
40 GaN GaAs0 GaN 41 48GHz 8GHz 100W 100W X/Ku X/Ku 818GHz 18GHz 50W 50W GaAs 2GHz GaN GaN 42 43
~GHGH~ X Ku Ku 2007.6.21 44 46 C WFET C WFET X WFET X WFET WFET WFET 45 47
49.6dBm(91W) 57.49dBm(561W) 40.5% 15.1% Input/Output characteristics of the 90W FET 48 50 C-Band 500W SSPA 90W GaAs FET 64pcs in final stage for 3.5kW Transmitter >57dBm(500W) @5.25.4GHz 5.4GHz 49 51
XWFETTGI8596-50) 50) F E A T U R E S HIGH POWER BROAD BAND INTERNALLY MATCHED HEMT Pout=47.0dBm at Pin=41.0dBm HERMETICALLY SEALED PACKAGE HIGH GAIN GL=9.0dB at 8.5GHz to 9.6GHz RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C ) CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX. Output Power at Pin=41dBm Pout dbm 46.0 47.0 Liner Gain GL db 8.0 9.0 V DS=24V Drain Current IDS1 f=8.5to9.6ghz A 4.5 TBD Gain Flatness Δ G db ± 0.8 Power Added Efficiency η add % 35 Channel Temperature Rise Δ Tch (VDS X IDS + Pin Pout)X Rth(c-c) C 110 PACKAGE OUTLINE ( 7- AA04A ) Unit in mm Gate 19inch 2 19inch 1 Smaller MoreMore reliable Reduced occupied frequency bandwidth Source Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260 C. 52 54 C X WFET WFET Bm Pout=50W WFET 12.9 A, A 21.5 Bm 53 55
(11 (11 GaN X500MHz 250W 25dB +35V-5V 150mm150mm45mm GaAsGaN X500MHz W NF 5dB DC48V 214mm450mm153mm 56 58 C X WFET WFET WFET 57 59