Diode 肖特基二极管 (Schottky Diode) V RRM Peak repetitive reverse voltage 反向重复峰值电压 V RWM Working peak reverse voltage 反向工作峰值电压 V R DC Blocking Voltage 反向直流电压 V R(RMS) RMS Reverse Voltage 反向电压有效值 I F(AV) Average Rectified Forward Current 正向平均电流 I R Reverse Current 反向电流 I FSM Non-Repetitive Peak Forward Surge Current 正向浪涌电流 V F Forward Voltage 正向直流电压 C j Typical Junction Capactiance 结电容 P D Power Dissipation 耗散功率 T j Operating Junction Temperature 工作结温 T stg Storage Temperature Range 存储温度 R th(j-a) Thermal Resistance from Junction to Ambient 结到环境的热阻 Pin 二极管 ( Pin Diode) V R Continuous reverse voltage 反向直流电压 I F Continuous forward current 正向直流电流 V F Forward voltage 正向电压 I R Reverse current 反向电流 C d diode capacitance 二极管电容 r d diode forward resistance 二极管正向电阻 P tot total power dissipation 总的功率损耗 T j Junction Temperature 结温 T stg storage temperature 存储温度 TVS 二极管 (TVS Diode) I PP Maximum reverse peak pulse current 峰值脉冲电流 V C Clampling voltage 钳位电压 I R Maximum reverse leakage current 最大反向漏电流 V (BR) Breakdown voltage 击穿电压 V RWM Working peak reverse voltage 反向工作峰值电压 V F Forward voltage 正向电压 I F Forward current 正向电流 I T Test current 测试电流
可控硅 (SCR) V DRM Peak repetitive off-state voltage 断态重复峰值电压 V RRM Peak repetitive reverse voltage 反向重复峰值电压 I T(RMS) RMS On-state current 额定通态电流 I TSM Non repetitive surge peak on-state current 通态非重复浪涌电流 I GM Forward peak gate current 控制极重复峰值电流 V TM peak forward on-state voltage 通态峰值电压 I GT Gate trigger current 控制极触发直流电流 V GT Gate trigger voltage 控制极触发电压 I H Holding current 维持电流 I DRM Peak repetitive off-state current 断态重复峰值电流 I RRM Peak repetitive reverse current 反向重复峰值电流 P G(AV) Average gate power dissipation 控制极平均功率 Tj operating junction temperature range 工作结温 Tstg storage temperature range 存储温度
稳压管 (Three Terminal Voltage Regulator) V I input voltage 输入电压 Vo output voltage 输出电压 ΔVo Load regulation 输出调整率 ΔVo Line regulation 输入调整率 Iq quiescent current 偏置电流 ΔIq quiescent current change 偏置电流变化量 V N Output noise voltage 输出噪声电压 RR Ripple rejection 纹波抑制比 Vd dropout voltage 降落电压 Isc short circuit current 短路输出电流 Ipk peak current 峰值输出电流 T opr operating junction temperature range 结温 T stg storage temperature range 存储温度 43 系列稳压管 (Adjustable Shunt Regulator) V KA Cathode voltage 阴极电压 I K Cathode current range(continous) 阴极电流 I ref Reference input current range,continous 基准输入电流 P D Power dissipation 耗散功率 R th(j-a) Thermal resistance from junction to ambient 结到环境的热阻 T opr operating junction temperature range 工作结温 Tstg storage temperature range 存储温度 V ref Reference input voltage 基准输入电压 ΔV ref(dev) Deviation of reference input voltage over full temperature range 全温度范围内基准输入电压的偏差 ΔV ref /ΔV KA Ratio of change in reference input voltage to the change in cathode voltage 基准输入电压变化量与阴极电压变化量的比 ΔI ref(dev) Deviation of reference input current over full temperature range 全温度范围内基准输入电流的偏差 I min Minimum cathode current for regulation 稳压时最小负极电流 I off Off-state cathode current 关断状态阴极电流 Z KA Dynamic impedance 动态阻抗
普通晶体管 (T ransistor) V CBO Collector-Base voltage 发射极开路, 集电极 - 基极电压 V CEO Collector-emitter voltage 基极开路, 集电极 - 发射极电压 V EBO Emitter-base voltage 集电极开路, 发射极 - 基极电压 I C Collector current 集电极电流 P C Collector power dissipation 集电极耗散功率 T j Junction temperature 结温 T stg storage temperature 存储温度 V (BR)CBO Collector-Base breakdown voltage 发射极开路, 集电极 - 基极反向电压 V (BR)CEO Collector-emitter breakdown voltage 基极开路, 集电极 - 发射极反向电压 V (BR)EBO Emitter-base breakdown voltage 集电极开路, 发射极 - 基极反向电压 I CBO Collector cut-off current 发射极开路, 集电极 - 基极截止电流 I EBO Emitter cut-off current 集电极开路, 发射极 - 基极截止电流 I CEO Collector cut-off current 基极开路, 集电极 - 发射极截止电流 h FE DC current gain 共发射极正向电流传输比的静态值 V CEsat Collector-emitter saturation voltage 集电极 - 发射极饱和电压 V BEsat Base-emitter saturation voltage 基极 - 发射极饱和电压 V BE Base-emitter voltage 基极 - 发射极电压 f T Transition frequency 特征频率 C obo Collector output capacitance 共基极输出电容 C ibo Collector input capacitance 共基极输入电容 F Noise figure 噪声系数 t on Turn-on time 开通时间 t off Turn-off time 关断时间 t r Rise time 上升时间 t s Storage time 存储时间 t f Fall time 下降时间 t d Delay time 延迟时间
数字晶体管 (Digital Transistor) V CC Supply voltage 直流电压 V IN input voltage 输入电压 I O output current 输出电流 P D Power dissipation 功率损耗 V I(off) Input-off voltage 输入截止电压 V I(on) Input-on voltage 输入开启电压 V O(on) output voltage 输出电压 I I input current 输入电流 I O(off) output current 输出截止电流 G I DC current gain 直流增益 R 1 Input resistance 输入电阻 R 2 /R 1 Resistance ratio 电阻率 f T Transition frequency 传输频率 T j junction temperature 结温 T stg storage temperature range 存储温度 V CBO Collector-base voltage 发射极开路, 集电极 - 基极反向击穿电压 V CEO Collector-emitter voltage 基极开路, 集电极 - 发射极反向击穿电压 V EBO Emitter-base voltage 集电极开路, 发射极 - 基极反向击穿电压
MOS 管 (MOSFET) I D Continous drain current 漏极直流电流 V GS Gate-source voltage 栅 - 源电压 V DS Drain-source voltage 漏 - 源电压 E AS single pulse avalchane energy 单脉冲雪崩击穿能量 R th(j-a) Thermal resistance from junction to ambient 结到环境的热阻 R th(j-c) Thermal resistance from junction to case 结到管壳的热阻 V (BR)DSS Drain-source breakdown voltage 漏源击穿电压 V (GS)th Gate threshold voltage 栅源阈值电压 I GSS Gate-body leakage current 漏 - 源短路的栅极电流 I DSS Zero gate voltage drain curent 栅 - 源短路的漏极电流 r DS(on) Drain-source on-resistance 漏源通态电阻 g fs Forward transconductance 跨导 V SD Diode forward voltage 漏源间体内反并联二极管正向压降 C iss Input capacitance 栅 - 源电容 C oss Output capacitance 漏 - 源电容 C rss Reverse transfer capacitance 反向传输电容 R g Gate resistance 栅极电阻 t d(on) Turn-on delay time 开通延迟时间 t r Rise time 上升时间 t d(off) Turn-off delay time 关断延迟时间 t f Fall time 下降时间 I DM Pulsed drain current 最大脉冲漏电流 P D Power dissipation 耗散功率 T j operating junction temperature range 结温 T stg storage temperature range 存储温度