HT647PL

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俭毛
5 years ago
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1 LDMOS 射频功率晶体管 1. 产品特性无内匹配设计, 方便应用于从 HF 至 600MHz 频率范围内的各类窄宽带功放增强鲁棒性设计适用于 20-28V 供电电压内部集成的增强 ESD 设计优异的热稳定性符合 RoHS 规范 HT647PL HT647PLB HT647PL 封装 : H2110S-4L 2. 产品用途模拟及数字广播气象及航空雷达专网通信基站工业用激光源和等离子设备各类核磁共振仪器粒子加速器 HT647PLB 封装 : H2110-4L Gate A 3 1 Drain A Gate B 4 2 Drain B 3. 订购信息 (Top View) 引脚连接型号封装描述封装名称 HT647PL Earless flanged ceramic package; 4 leads H2110S-4L HT647PLB Flanged ceramic package; 2 mounting holes; 4 leads H2110-4L 1 / 10

2 4. 典型性能 HT647PL 200W 射频功率晶体管可应用于 MHz 频率范围内各类雷达通信和 ISM 应用表 1. 窄带典型射频性能测试条件 :V DD=28Vdc,I DQ=600mA,CW Signal, 基于华太功放电路测试频率 (MHz) 线性增益 (db) P1dB (dbm) P1dB 效率 (%) P3dB (dbm) P3dB 效率 (%) 表 2. 宽带典型射频性能测试条件 :V DD=28Vdc,I DQ=1000mA,CW Signal, 基于华太功放电路测试频率 (MHz) 线性增益 (db) P1dB (dbm) P1dB 效率 (%) P3dB (dbm) P3dB 效率 (%) 极限参数表 3. 极限参数参数符号值单位漏源电压 V DSS -0.5, +65 V 栅源电压 V GS -5.0, +10 V 温度存储 T stg -55 to / 10

3 工作结温 T J -40 to 热性能表 4. 热性能参数符号条件典型值单位热阻 ( 管芯至封装法兰 ) R θjc 封装管脚温度 :80 CW 输出功率 :200W 0.4 /W 7. 电学特性表 5. 电学特性参数符号测试条件最小值典型值最大值单位击穿电压 V (BR)DSS V GS=0V; I D=108uA 开启电压漏极漏电电流栅极漏电电流 V GS(th) I DSS I GSS V DS= V GS; I D=108uA V DS=65V; V GS=0V V DS=0V; V GS= 5V V V ua ua 表 6. ESD 特性测试方法等级 HBM ( 参考 JESD22--A114) 1B MM ( 参考 EIA/JESD22--A115) A CDM ( 参考 JESD22--C101) III 表 7. 负载失配测试 ( 基于华太 Demo PA 测试电路 ) 测试条件测试结果 3 / 10

4 VSWR=10:1 at all Phase Angles Pulsed: VDD=28Vdc, IDQ=600mA, f=400mhz, Pout=200W Peak (20W Avg.), 100usec Pulse Width, 10% Duty. 晶体管性能无衰减 8. 参考设计 MHz 测试电路设计版图图 1. HT647PL 测试电路元件布局 MHz 表 8. HT647PL MHz 测试电路元件清单 Part Description Part Number Manufacturer C1, C2, C3 56pF Chip Capacitor ATC100B560JT500XT ATC C4, C7, C9 100pF Chip Capacitors GRM1885C1H101JA01D TDK C5, C8, C10 10nF Chip Capacitors GR321AD72E103KW01D Murata C6 10uF Chip Capacitors Arbitrary Arbitrary C11 12pF Chip Capacitors ATC100B120JT500XT ATC C12, C13, C14, C15, C16 100pF Chip Capacitors ATC100B101JT500XT ATC C pF Chip Capacitors ATC100B102JT500XT ATC C18 10uF Chip Capacitors 22201C106MAT2A AVX C19 470uF, 50V Electrolytic Capacitors Electrolytic Capacitors Arbitrary R1, R2 50Ohm, /4W Chip Resistors Arbitrary Arbitrary R3 1KOhm, Wire Resistors Arbitrary Arbitrary E1, E2, E3 #61 Multi-Aperture Core Fair-Rite Coax1,2,3 16Ohm SR Coax, 40 mm Arbitrary Arbitrary Coax4,5 18Ohm SR Coax, 80 mm Arbitrary Arbitrary 4 / 10

5 Coax6 50Ohm SR Coax, 146 mm Arbitrary Arbitrary Q1 LDMOS transistor HT647PL Kunshan Huatai Electronics Ltd. PCB 30mil, εr=3.50 RF 35 Taconic MHz 参考设计典型性能测试条件 :V DD=28Vdc, I DQ=600mA, CW Signal Pout(dBm) MHz 450MHz 500MHz Pin(dBm) 图 2. Pout vs. Pin 5 / 10

6 D 70 Gain (db) Gain 400MHz 450MHz 500MHz Drain Efficiency (%) Pout (dbm) 图 3. Gain and Eff vs. Pout MHz 宽带测试电路设计版图图 4. HT647PL 测试电路元件布局 MHz 表 9. HT647PL MHz 宽带测试电路元件清单 Part Description Part Number Manufacturer 6 / 10

7 C1, C2, C3 56pF Chip Capacitor ATC100B560JT500XT ATC C4, C7, C9 100pF Chip Capacitors GRM1885C1H101JA01D TDK C5, C8, C10 10nF Chip Capacitors GR321AD72E103KW01D Murata C6 10uF Chip Capacitors Arbitrary Arbitrary C11 3pF Chip Capacitors ATC100B3R0JT500XT ATC C12, C13, C16, 100pF Chip Capacitors ATC100B101JT500XT ATC C14, C15, C pF Chip Capacitors ATC100B102JT500XT ATC C18 10uF Chip Capacitors 22201C106MAT2A AVX C19 470uF, 50V Electrolytic Capacitors Electrolytic Capacitors Arbitrary R1, R2 50Ohm, /4W Chip Resistors Arbitrary Arbitrary R3 1KOhm, Wire Resistors Arbitrary Arbitrary E2, E3 #43 Multi-Aperture Core Fair-Rite E1, E4, E5, E6, E7 #61 Multi-Aperture Core Fair-Rite Coax1,7 50Ohm SR Coax, 120 mm Arbitrary Arbitrary Coax3,4,5,6 25Ohm SR Coax, 120 mm Arbitrary Arbitrary Q1 LDMOS transistor HT647PL Kunshan Huatai Electronics Ltd. PCB 30mil, εr = 3.50 RF 35 Taconic MHz 参考设计典型性能测试条件 :V DD=28Vdc, I DQ=1000mA, CW Signal Pout(dBm) MHz 300MHz 512MHz Pin(dBm) 7 / 10

8 图 5. Pout vs. Pin D Gain(dB) Gain 100MHz 300MHz 512MHz Drain Efficiency (%) Pout(dBm) 图 6. Gain and Eff vs. Pout 0 Gain and Eff VS. Pout 8 / 10

9 9. 封装尺寸 H2110S-4L 9 / 10

10 H2110-4L Symbol Dimesions in Milimeters Dimesions in Inches Min. Mon. Max. Min. Mon. Max. A B C D D E E F H H L P Q q U U e / 10

HTN7G27S010P

HTN7G27S010P LDMOS 射频功率晶体管 1. 产品特性无内匹配设计, 方便应用于从 1.8 至 0MHz 频率范围内的各类窄宽带功放为适应高 VSWR 应用的增强型鲁棒性设计最高工作 VDD 可达 50V 适用于 28V 至 50V 范围内供电电压, 方便不同功率等级功放设计优异的功率线性度优异的热稳定性内部集成的增强 ESD 设计符合 RoHS 规范 HTH7G06P500H 封装 :H2110S-4L