CS60系列高压晶闸管

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戽意却
5 years ago
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HCS60 are suitable for general purpose applications, a high gate sensitivity is required. HCS60 TO-47 are non-insulated design.

1 Phase Control Thyristor: 相位控制晶闸管器件参数 DESCRIPTION: High current density due to double mesa technology. HCS60xxx of silicon controlled rectifiers are specifically designed for high power switching and phase control applications. HCS60 are suitable for general purpose applications, a high gate sensitivity is required. HCS60 TO-47 are non-insulated design. 产品应用 : 自动化电气设备 ; 开关电源 ; 无功补偿 ; 复合开关 ; 交流电开关 ; 交流 / 直流电源转换电路 ; 工业和家庭电加热器温度控制 ; 大功率路灯 ; 大功率捕鱼器 ; 电机马达调速控制电路 ; 以及三相交流输入的高压电路及变频电路 QUICK REFERENCE 參考特性产品型号 Part Number 工业型号 Industry Part 通态电流 I T(RMS) 峰值电压 V DRM /V RRM 触发电流 I GT 触发电压 V GT 封装外形 Package HCS60-08io1 HCS60-1io1 CS60-08io1 CS60-1io V 100 V no-insulated HCS60-16io1 HCS60-18io1 HCS60-0io1 CS60-16io1 CS60-18io1 CS60-0io V 1800 V 000 V Super-47 or TO-47 no-insulated ( 非绝缘型 ) Super-47 or TO Pin Symbol Description Description Pin Polarity Circuit diagram 管腳排列對應極性極性名詞極性含義腳位與極性之電路符號表示 K G Cathode node Gate Tab 陰極陽極門 - 控制極散熱片 1=K = 3=G G K HOHI ELECTRONICS CO., LTD. 注册商标仿冒必究 KKG Product Data

2 Phase Control Thyristor: 相位控制晶闸管电气參數 BSOLUTE RTINGs (Limiting Values) 额定值参数 SYMBOL 符號表示 Paramenter & Test Conditions 符號含義及參數測試條件說明 Value 數值 Unit 單位 I T(RMS) RMS On-State RMS Current (all conduction angels) Lead current llmltation 75 I T(V) verage On-State Current (half sine wave) I TSM I GM I t P GM P G(V) Non-Repetitive Surge peak on-state Current (half sine cycle, Tj=5 ) Peak gate current I t Value for fusing Circuit Fusing Consideration Peak Gate Power verage Gate Power dissipation Tc=80 f=50hz, t=10ms tp=01µs, t=10ms tp=01µs, f=60hz, t=8.3ms s W V DRM V RRM V DSM V RSM Peak Repetitive Peak Off State Voltage Peak Repetitive Peak Reverse Voltage Non Repetitive Surge Peak Off State Voltage Non Repetitive Peak Reverse Voltage 800~ ~100 V T j Operating Junction Temperature Range Rate V RRM and V DRM Tstg Storage junction Temperature Range T L Maximum Lead Temperature for Soldering Purposes 1/8,from Case for 10 Seconds di T /dt Repetitive rate of rise of on-state Current after triggering I TM =70, I G =100m dlg/dt=1/µs -40 ~ ~ /µs ELECTRICL CHRCTERISTICs (Tj=5 Unless Otherwise Noted) 電参数 SYMBOL 符號表示 Paramenter & Test Conditions 參數符號含義及測試條件說明 Min 最小值 Typ 典型值 Max 最大值 Unit 單位 I GT V D =1V, R L =33Ω I H Holding Current (I T =500m) 150 m I L I G = 1. I GT 00 I DRM I RRM Tj=5 V D =V DRM, V R =V RRM µ m V GT V D =1V, RL=33Ω 1.5 V GD Gate Non-Trigger Voltage (V D =V DRM, R L =3.3KΩ, T j =15 ) 0. V V TM Peak Forward On-State Voltage (I TM =100,T j =5,tp=380µs) 1.55 dv/dt V D =67% V DRM, Gate open, T j = V/µs R th(j-mb) Thermal Resistance From Junction to mounting base TO /W HOHI ELECTRONICS CO., LTD. 注册商标 KKG Product Data 仿冒必究

3 Phase Control Thyristor: 相位控制晶闸管封装信息 Package Information (mm & Inches) TO-47 (Super-47) 封裝尺寸單位 : 毫米與英寸對照 mm & Inches Detail Scale: :1 MILLIMETERS INCHES MILLIMETERS INCHES DIM. DIM. MIN. MX. MIN. MX. MIN. MX. MIN. MX D D E b E b e 5.45 BSC 0.15 BSC b L c L D R 注册商标仿冒必究 HOHI ELECTRONICS CO., LTD. KKG Product Data

Phase Control Thyristor: 相位控制晶闸管电报特性 P (W) FIG.

() FIG.3: On-state characterstics (maxmum values). I TSM () FIG.

5: Non-repetitive surge peak on-state current for a slnusoldal pulse

I GT,I H,I L [T j ]/I GT,I H,I L [T j =5 ] FIG.

4 Phase Control Thyristor: 相位控制晶闸管电报特性 P (W) FIG.1: Maximum power dissipation versus average on-state current (half cycle) I T(RMS) () FIG.: RMS on-state current versus case 180 temperature (full cycle) I TM () FIG.3: On-state characterstics (maxmum values). I TSM () FIG.4: Surge peak on-state current versus number of cycles. FIG.5: Non-repetitive surge peak on-state current for a slnusoldal pulse with width tp<10ms, I TSM (),I t ( s) and corresponding value of I t. I GT,I H,I L [T j ]/I GT,I H,I L [T j =5 ] FIG.6: Relatlve variations of gate trlgger current, holding current and Iatching current versus junction temperature (typical values) 注册商标仿冒必究 HOHI ELECTRONICS CO., LTD. KKG Product Data

5 Phase Control Thyristor: 相位控制晶闸管联络信息版本信息 , KKG Product Data-V1.0 经中华人民共和国工商行政管理总局商标局批准 KKG 图案字母均为我公司正式注册商标, 仿冒盗用均属侵权, 违法必究! 深圳市浩海电子有限公司 SHENZHEN HOHI ELECTRONICS CO., LTD. DD: Room , 5th Floor, Block, Huafeng Commercial Building, rea 5, Bao'an District, Shenzhen, Guangdong Province, CHIN. 中国. 广东省. 深圳市. 宝安区. 宝城 5 区. 华丰商务大厦座五楼 50~503 公司电话总机八线 TEL: TEL: FX: , Web: HOHI ELECTRONICS CO., LTD. 注册商标 KKG Product Data 仿冒必究

CS45系列高压晶闸管

CS45系列高压晶闸管 Phase Control Thyristor: 相位控制晶闸管器件参数 DESCRIPTION: High current density due to double mesa technology. HCS45xxx of silicon controlled rectifiers are specifically designed for high power switching and phase