CS45系列高压晶闸管

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HCS45 are suitable for general purpose applications, a high gate sensitivity is required.

1 Phase Control Thyristor: 相位控制晶闸管器件参数 DESCRIPTION: High current density due to double mesa technology. HCS45xxx of silicon controlled rectifiers are specifically designed for high power switching and phase control applications. HCS45 are suitable for general purpose applications, a high gate sensitivity is required. HCS45 provides a 2500V RMS isolation voltage from all three teminals to extemal heetsink complying with UL standards (File ref.: E252906). 产品应用 : 自动化电气设备 ; 开关电源 ; 无功补偿 ; 复合开关 ; 交流电开关 ; 交流 / 直流电源转换电路 ; 工业和家庭电加热器温度控制 ; 大功率路灯 ; 大功率捕鱼器 ; 电机马达调速控制电路 ; 以及三相交流输入的高压电路及变频电路 QUIC REFERENCE 參考特性产品型号 Part Number 工业型号 Industry Part 通态电流 I T(RMS) 峰值电压 V DRM /V RRM 触发电流 I GT 触发电压 V GT 封装外形 Package HCS45-08io HCS45-2io HCS45-6io HCS45-8io HCS45-20io CS45-08io CS45-2io CS45-6io CS45-8io CS45-20io 0800 V 200 V 600 V 800 V 2000 V 绝缘型 or TO-247D 非绝缘型 TO-247D no-insulated ( 非绝缘型 ) (TO-3PT or TO-28) Insulated ( 绝缘型封装 ) Mraking 元件打印标识 3 H: 浩海电子 H: HOHI G: 品牌 - 注册商标 aa: 出厂年份 bb: 出厂自然周 2 Pin Symbol Description Description Pin Polarity Circuit diagram 管腳排列對應極性極性名詞極性含義腳位與極性之電路符號表示 2 3 G 4 Cathode node Gate Tab 陰極陽極門 - 控制極散熱片 = 2= 3=G G HOHI ELECTRONICS CO., LTD. 注册商标 G Product Data 仿冒必究

2 Phase Control Thyristor: 相位控制晶闸管电气參數 BSOLUTE RTINGs (Limiting Values) 额定值参数 SYMBOL 符號表示 Paramenter & Test Conditions 符號含義及參數測試條件說明 Value 數值 Unit 單位 I T(RMS) I T(V) verage On-State Current (half sine wave) I TSM RMS On-State RMS Current (all conduction angels) (Tc=80 ) TO-247D (Tc=83 ) (Tc=80 ) TO-247D (Tc=83 ) Non-Repetitive Surge peak on-state Current f=50hz, t=0ms (half sine cycle, Tj=25 ) f=30hz, t=8.3ms I GM Forward Peak Gate Current tp=20µs, Tj=25 5 I 2 t I2t Value for fusing Circuit Fusing Consideration t=0ms s P GM P G(V) Peak Gate Power verage Gate Power dissipation tp=20µs, Tj=25 Tj=25 0 W V DRM V RRM Peak Repetitive Peak Off State Voltage (Tj=25 ) Peak Repetitive Peak Reverse Voltage (Tj=25 ) TO-247D 800~2000 V T j Operating Junction Temperature Range Rate V RRM and V DRM -40 ~ +25 Tstg Storage junction Temperature Range -40 ~ +50 T L Maximum Lead Temperature for Soldering Purposes /8,from Case for 0 Seconds 260 di T /dt Repetitive rate of rise of on-state Current after triggering ITM=40, IG=00m dlg/dt=/µs 50 /µs ELECTRICL CHRCTERISTICs (Tj=25 Unless Otherwise Noted) 電参数 SYMBOL 符號表示 Paramenter & Test Conditions Min Typ Max Unit 參數符號含義及測試條件說明最小值典型值最大值單位 I GT V D =2V, R L =33Ω I H Holding Current (I T =500m) m I L I G =.2 I GT I DRM I RRM Tj=25 V D =V DRM, V R =V RRM Tj= µ m V GT V D =2V, R L =33Ω.5 V GD Gate Non-Trigger Voltage (V D =V DRM, R L =3.3Ω, T j =25 ) 0.2 V V TM Peak Forward On-State Voltage (I TM =80,T j =25,tp=380µs).8 dv/dt V D =67% V DRM, Gate open, T j = V/µs R th(j-mb) R th(j-hs) Thermal Resistance From Junction to mounting base Thermal Resistance From Junction to heatsink with heatsink compound 0.65 TO-247D TO-247D 0.85 /W HOHI ELECTRONICS CO., LTD. 注册商标仿冒必究 G Product Data

3 Phase Control Thyristor: 相位控制晶闸管封装信息 MECHNICL DT TO-247D 封裝尺寸單位 : 毫米與英寸對照 mm & Inches DIMENSIONS REF. Millimeters Inches Min Min B C D E F G H J L P Q S MECHNICL DT (TO-28) 封裝尺寸單位 : 毫米與英寸對照 mm & Inches DIMENSIONS REF. Millimeters Min. Typ. 4.4 B.45 C 4.35 D 0.5 E 2.7 F 5.8 G 20.4 H 5. J 5.4 Inches Min. Typ L P R 注册商标仿冒必究 HOHI ELECTRONICS CO., LTD. G Product Data

Phase Control Thyristor: 相位控制晶闸管电报特性 P (W) FIG.

2: RMS on-state current versus case temperature (full cycle) I TM () FIG.

4: Surge peak on-state current versus number of cycles. FIG.

I TSM (),I 2 t ( 2 s) and corresponding value of I 2 t.

4 Phase Control Thyristor: 相位控制晶闸管电报特性 P (W) FIG.: Maximum power dissipation versus average on-state current (half cycle) I T(RMS) () FIG.2: RMS on-state current versus case temperature (full cycle) I TM () FIG.3: On-state characterstics (maxmum values). I TSM () FIG.4: Surge peak on-state current versus number of cycles. FIG.5: Non-repetitive surge peak on-state current for a slnusoldal pulse with width tp<0ms, I TSM (),I 2 t ( 2 s) and corresponding value of I 2 t. I GT,I H,I L [T j ]/I GT,I H,I L [T j =25 ] FIG.6: Relatlve variations of gate trlgger current, holding current and Iatching current versus junction temperature (typical values) 注册商标仿冒必究 HOHI ELECTRONICS CO., LTD. G Product Data

5 Phase Control Thyristor: 相位控制晶闸管联络信息版本信息 , G Product Data-V , G Product Data-V2.0 经中华人民共和国工商行政管理总局商标局批准 G 图案字母均为我公司正式注册商标, 仿冒盗用均属侵权, 违法必究! SHENZHEN HOHI ELECTRONICS CO., LTD. 2 floor(whole floor), BOXIN Building. 0 Lane on the 8th. Yufeng Garden. 82 District. BON District, Shenzhen City, Guangdong Province, China. 中國廣東省深圳市寶安區 82 区裕豐花園零巷 8 號寶馨樓二楼 ( 全层 ) TEL: TEL: FX: , Web: 深圳市浩海电子有限公司公司电话总机八线 HOHI ELECTRONICS CO., LTD. 注册商标 G Product Data 仿冒必究

CS60系列高压晶闸管

CS60系列高压晶闸管 Phase Control Thyristor: 相位控制晶闸管器件参数 DESCRIPTION: High current density due to double mesa technology. HCS60xxx of silicon controlled rectifiers are specifically designed for high power switching and phase