DISCRETE SEMICONDUCTORS BFG43W Supersedes data of 1997 Oct 29 File under Discrete Semiconductors, SC14 1998 Mar 11
BFG43W FEATURES Low current Very high power gain Low noise figure High transition frequency Very low feedback capacitance. PINNING PIN DESCRIPTION 1 emitter 2 base 3 emitter 4 collector APPLICATIONS Pager front ends RF front end Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.) Radar detectors. DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. 3 4 2 1 Top view MSB842 Marking code: P3. Fig.1 Simplified outline SOT343R. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V CBO collector-base voltage open emitter 1 V V CEO collector-emitter voltage open base 4.5 V I C collector current (DC) 3 3.6 ma P tot total power dissipation T s 14 C 16 mw h FE DC current gain I C = 3 ma; V CE =2V; T j =25 C 5 8 12 C re feedback capacitance I C = ; V CB =2V; f=1mhz 2 ff f T transition frequency I C = 3 ma; V CE = 2 V; f = 2 GHz; T amb =25 C 17 GHz G max maximum power gain I C = 3 ma; V CE = 2 V; f = 2 GHz; T amb =25 C 22 db F noise figure I C = 1 ma; V CE = 2 V; f = 9 MHz; Γ S = Γ opt 1 db CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-68, SNW-FQ-32A and SNW-FQ-32B. 1998 Mar 11 2
BFG43W LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CBO collector-base voltage open emitter 1 V V CEO collector-emitter voltage open base 4.5 V V EBO emitter-base voltage open collector 1 V I C collector current (DC) 3.6 ma P tot total power dissipation T s 14 C; note 1; see Fig.2 16 mw T stg storage temperature 65 +15 C T j operating junction temperature 15 C Note 1. T s is the temperature at the soldering point of the emitter pins. THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT R th j-s thermal resistance from junction to soldering point 82 K/W 2 MGD957 P tot (mw) 1 4 8 12 16 T s ( C) Fig.2 Power derating curve. 1998 Mar 11 3
BFG43W CHARACTERISTICS T j =25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)CBO collector-base breakdown voltage I C = 2.5 µa; I E = 1 V V (BR)CEO collector-emitter breakdown voltage I C = 1 ma; I B = 4.5 V V (BR)EBO emitter-base breakdown voltage I E = 2.5 µa; I C = 1 V I CBO collector-base leakage current I E = ; V CB = 4.5 V 15 na h FE DC current gain I C = 3 ma; V CE = 2 V; see Fig.3 5 8 12 C c collector capacitance I E =i e = ; V CB =2V; f=1mhz 17 ff C e emitter capacitance I C =i c = ; V EB =.5 V; f = 1 MHz 315 ff C re feedback capacitance I C = ; V CB = 2 V; f = 1 MHz; 2 ff see Fig.4 f T transition frequency I C = 3 ma; V CE = 2 V; f = 2 GHz; 17 GHz T amb =25 C; see Fig.5 G max maximum power gain; note 1 I C =.5 ma; V CE = 1 V; f = 9 MHz; 2 db T amb =25 C; see Figs 6 and 8 I C = 3 ma; V CE = 2 V; f = 2 GHz; T amb =25 C; see Figs 7 and 8 22 db 2 insertion power gain I C =.5 ma; V CE = 1 V; f = 9 MHz; 5 db S 21 T amb =25 C; see Fig.8 I C = 3 ma; V CE = 2 V; f = 2 GHz; 14 db T amb =25 C; see Fig.8 F noise figure I C = 1 ma; V CE = 2 V; f = 9 MHz; 1 db Γ S = Γ opt ; see Fig.13 I C = 1 ma; V CE = 2 V; f = 2 GHz; Γ S = Γ opt ; see Fig.13 1.6 db P L1 output power at 1 db gain compression I C = 1 ma; V CE = 1 V; f = 9 MHz; Z S =Z S opt ; Z L =Z L opt ; note 2 ITO third order intercept point I C = 1 ma; V CE = 1 V; f = 9 MHz; Z S =Z S opt ; Z L =Z L opt ; note 2 Notes 1. G max is the maximum power gain, if K > 1. If K < 1 then G max = MSG; see Figs 6, 7 and 8. 2. Z S is optimized for noise; Z L is optimized for gain. 5 dbm 6 dbm 1998 Mar 11 4
BFG43W 12 h FE MGG678 5 C re (ff) 4 MGG679 8 (1) (2) (3) 3 4 2 1 2 4 I C (ma) 6 (1) V CE =3V. (2) V CE =2V. (3) V CE =1V. 1 2 3 4 5 V CB (V) I C = ; f = 1 MHz. Fig.3 DC current gain as a function of collector current; typical values. Fig.4 Feedback capacitance as a function of collector-base voltage; typical values. 2 f T (GHz) 16 MGG68 3 MSG (db) MGG79 12 2 8 1 4 1 I C (ma) 1 2 4 6 I C (ma) V CE = 2 V; f = 2 GHz; T amb =25 C. V CE = 2 V; f = 9 MHz. Fig.5 Transition frequency as a function of collector current; typical values. Fig.6 Maximum stable gain as a function of collector current; typical values. 1998 Mar 11 5
BFG43W 3 MSG (db) MGG71 4 gain (db) 3 MSG MGG711 2 2 S 21 1 1 2 4 6 I C (ma) 1 1 2 1 3 1 f (MHz) 4 V CE = 2 V; f = 2 GHz. I C = 3 ma; V CE =2V. Fig.7 Maximum stable gain as a function of collector current; typical values. Fig.8 Gain as a function of frequency; typical values. handbook, full pagewidth 9 1 1. 135.5 2 45.8.6.2 5.4.2 18.2.5 1 2 5 4 MHz.2 3 GHz 5 135.5 2 45 1 9 MGG713 1. I C = 3 ma; V CE = 2 V; Z o =5Ω. Fig.9 Common emitter input reflection coefficient (S 11 ); typical values. 1998 Mar 11 6
BFG43W handbook, full pagewidth 9 135 45 4 MHz 18 25 2 15 1 5 3 GHz 135 45 9 MGG714 I C = 3 ma; V CE =2V. Fig.1 Common emitter forward transmission coefficient (S 21 ); typical values. handbook, full pagewidth 9 135 45 3 GHz.5.4.3.2.1 18 4 MHz 135 45 9 MGG715 I C = 3 ma; V CE =2V. Fig.11 Common emitter reverse transmission coefficient (S 12 ); typical values. 1998 Mar 11 7
BFG43W handbook, full pagewidth 9 1 1. 135.5 2 45.8.6.2 5.4 18.2.5 1 2 5 4 MHz.2.2 3 GHz 5 135.5 2 45 1 9 MGG716 1. I C = 3 ma; V CE = 2 V; Z o =5Ω. Fig.12 Common emitter output reflection coefficient (S 22 ); typical values. Noise data V CE = 2 V; typical values. f (MHz) I C (ma) F min (db) Γ mag Γ angle r n (Ω) 9.5.9.91 4.7 1.41 1 1.1.83 5.1 1.12 2 1.4.71 5.1.97 3 1.6.62 5..88 4 1.9.56 4.9.84 5 2.1.5 4.2.82 2.5 1.8.71 27.5 1.47 1 1.6.74 26.1 1.11 2 1.8.64 26.3.93 3 2.1.56 26.1.91 4 2.4.48 26.7.9 5 2.8.45 25.8.85 3 F min (db) 2 1 2 4 6 I C (ma) (1) V CE = 2 V; f = 2 GHz. (2) V CE = 2 V; f = 9 MHz. (1) (2) MGG712 Fig.13 Minimum noise figure as a function of the collector current; typical values. 1998 Mar 11 8
BFG43W SPICE parameters for the BFG43W die SEQUENCE No. PARAMETER VALUE UNIT 1 IS 5.554 aa 2 BF 145. 3 NF.993 4 VAF 31.12 V 5 IKF 35.75 ma 6 ISE 35.35 fa 7 NE 3. 8 BR 11.37 9 NR.985 1 VAR 1.874 V 11 IKR.14 A 12 ISC 57.8 aa 13 NC 1.546 14 RB 122.4 Ω 15 IRB. A 16 RBM 52.45 Ω 17 RE 1.511 Ω 18 RC 15.12 Ω 19 (1) XTB 1.5 2 (1) EG 1.11 ev 21 (1) XTI 3. 22 CJE 36.61 ff 23 VJE 9. mv 24 MJE.346 25 TF 4.122 ps 26 XTF 68.2 27 VTF 2.4 V 28 ITF.179 A 29 PTF. deg 3 CJC 16.21 ff 31 VJC 556.9 mv 32 MJC.27 33 XCJC.5 34 (1) TR. ns 35 (1) CJS 78.59 ff 36 (1) VJS 418.3 mv 37 (1) MJS.239 38 FC.55 SEQUENCE No. PARAMETER VALUE UNIT 39 (2)(3) C bp 145 ff 4 (2) R sb1 25 Ω 41 (3) R sb2 19 Ω Notes 1. These parameters have not been extracted, the default values are shown. 2. Bonding pad capacity C bp in series with substrate resistance R sb1 between B and E. 3. Bonding pad capacity C bp in series with substrate resistance R sb2 between C and E. B L1 Cbe QL B = 5; QL E = 5; QL B,E (f)=ql B,E (f/f c ) f c = scaling frequency = 1 GHz. Fig.14 Package equivalent circuit SOT343R2. List of components (see Fig.14) B' Ccb MGD956 DESIGNATION VALUE UNIT C be 8 ff C cb 2 ff C ce 8 ff L1 1.1 nh L2 1.1 nh L3 (note 1).25 nh Note 1. External emitter inductance to be added separately due to the influence of the printed-circuit board. E' E C' L3 L2 Cce C 1998 Mar 11 9
BFG43W PACKAGE OUTLINE Plastic surface mounted package; reverse pinning; 4 leads SOT343R D B E A X y H E v M A e 3 4 Q A A1 2 1 c w M B bp b1 Lp e 1 detail X 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A 1 max mm 1.1.8.1 b p b 1 c D E e e 1 H E L p Q v w.4.3.7.5.25.1 2.2 1.8 1.35 1.15 1.3 1.15 2.2 2..45.15.23.13.2.2 y.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT343R 97-5-21 1998 Mar 11 1
BFG43W DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 Mar 11 11
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