102 210 GHz CMOS 103 e-learning ( ) 103 / http://www.cic.org.tw/cic_v13/login/login.jsp CIC Introduction to Conversational French - Syllabus Summer 2004 1
102 SoC ( CIC ) 102 4 30 Full-custom 32 Full-custom 28 Analog Circuit 28 FPGA 32 Cell Based Design 53 ESL 9 182 348 IC Linux performance 12 ESL 8-point FFT Cortex- M4 16-point FFT 2 8-point FFT RTL Verilog (B) Synopsys Platform Architect ARM DS-5 FFT FFT SystemC 8- point FFT Verilog Cortex-M4 SystemC/Verilog 2
Full-custom String Matching Engine Image process DSP Communication Filter DC Servo Loop Full-custom ( External Resistor) 8~12MHz FPGA CIC MorFPGA + 3 19 6 2 IC IC 5 2 3
4 1 40 IC IC 4 11 20 MEMS 4
4 25 5 C M O S 5
210 GHz CMOS (Design and Implementation of a 210 GHz CMOS Amplifier) / 40 CMOS 210 GHz 213.5 GHz 10.5 db 13 GHz 0.8 V 42.3 10 db CMOS 200 GHz CMOS 200 GHz (Cut-off Frequency, ft) (Silicon Substrate) (Ultra-Thick Top Metal ) MIM (Metal-Insulator-Metal) CMOS 100 GHz CMOS (Common Source) (Cascode) [1] (Impedance Transformation) ft (Inter-stage coupling) 210 GHz 40 CMOS 210 GHz CMOS 6
S ( Maximum Available Gain, MAG ) CMOS ft ( Unilateral Amplifier ) 0.5 db Ri Ci Ro Co (Transconductance) gm S- (1) f0 gm/ci ft [2] [3] RS = RL (1) (2) 7
40 NMOS MAG Gv,max H21 40 NMOS Gv,max MAG (H21) 10.8 (VGS) (VDD) 0.8V Gv,max MAG (Unconditionally Stable) 200 GHz (2) 210 GHz Gv,max (2) Ro ft L Ro ft RO L ft 1/L Gv,max Ro/Ri Cascode CS gmro (Intrinsic Gain) Cascode Ri Cascode (Ro/Ri) CS 5 CS CG (Common Gate) Cascode ft Cascode CS 1 db Cascode VDD CS Cascode 200GHz LC (Self-resonant Frequency) 200GHz 200 GHz (Single-Stub Shunt Matching Network) 8
(a) (b) (a) (b) (Insertion Loss, IL) ZL ZS (Smith Chart) (a) ZS= 50 Ω TL1 TL2 d l (b) Z0 A B α db/λ IL PL/Pin = (PL/Pd)(Pd/Pin) (4) Gd Gstub YD Ystub ΓL = (ZL-Z0)/(ZL+Z0) Z0 d l (Conjugate Matching) [4] Z0 50 Ω 210 GHz α 2.8 db/λ ZL ZS ZL ZS 50Ω Agilent ADS ZL ZS IL IL [5] Gv,max IL Gv,max Ro/Ri 9
IL GHz IL Ro/Ri 210 GHz CS Cascode IL IL Gv,max (Total Gain) ILi ILo 50Ω MOS VGS= 0.8V CS Cascode VDD 0.8V 1.6V finger number 2 32 finger 0.9 µm Cascode ILo Cascode 1.5 db Cascode (nr=20) Cascode CS 210 GHz 210 GHz 40 CMOS CS nr = 12 10
9 (CPW) (Microstrip) (Ground Plane) 4.5 µm (Multi-line De-embedding Method) Pad 720 µm 540 µm ADS MLIN (Modeling) ft ft VDS 0.9V VDS VGS ft ft VDS dc 0.67 / ft 11
Gv,max (ac) (dc) ac CS Gv,max 0.45 db Gv,max MOM 1 db dc (a) (b) Zout Zin (a) (b) d l x 0.1λ (Shunt Stub) 0.94 db 12
450 270 103 130 ADS Momentum ILi ILo 1.0 0.9 db 1.6 db 210 GHz 3.0 db 10 db 9 12.3 db 52.6 210 GHz 40 CMOS MIM 140 GHz 220 GHz S HP 4142B RF E8361C N5260A N5256AW05 LRRM 13
S S S21 213.5 GHz 10.5 db 3- db 13 GHz 213.5 GHz S11 S22-12 db -22 db (S12) -30 db 0.8 V 52.9 ma (NF)210 GHz 13.4 db 210 GHz (PAE) 0.8V 1dB (P1dB) -7.2 dbm (PSAT) -3.2 dbm PAE 0.75 VDD= 0.9 V PSAT -2.4 dbm 1.8 db210 GHz 140 GHz CMOS 14
fpeak Gain VDD PDC Ref. Tech. Gain P1dB (dbm) Area (GHz) (V) (mw) (db) (mm 2 ) [6] 65 nm 200 2.0 108 8.1-10 0.058 [7] 65 nm 150 1.1 25.5 8.2 1.5 0.16 [8] 65 nm 144 1.4 54.6 20.6 5 0.048 [9] 65 nm 142 * 1.2-11 -0.5 0.125 * [10] 65 nm 140 1.2 63 8-5 0.06 * [11] 65 nm 140 1.2 112 + 9.9-0.27 * This 40 nm 213.5 0.8 42.3 10.5-7.2 0.013 Work *. 40 CMOS 210 GHz 213.5 GHz 10.5 db 0.8 V 42.3 0.013 GHz [1] T. Yao et al., Algorithmic design of CMOS LNAs and PAs for 60GHz radio, IEEE J. of Solid State Circuits, Vol. 42, No. 5, May 2007. [2] C.-H. Li and C.-N. Kuo, 16.9-mW 33.7-dB gain mmwave receiver front-end in 65 nm CMOS, in 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2012, pp. 179 182. [3] E. Laskin, P. Chevalier, A. Chantre, B. Sautreuil, and S. P. Voinigescu, 165-GHz transceiver in SiGe technology, IEEE J. Solid-State Circuits, vol. 43, no. 5, pp. 1087 1100, May 2008. [4] D. M. Pozar, Microwave Engineering, 3rd ed. New York: Wiley, 2005. [5] I. Aoki, S. D. Kee, D. B. Rutledge, and A. Hajimiri, Distributed active transformer A new powercombining and impedance-transformation technique, IEEE Trans. Microw. Theory Tech., vol. 50, no. 1, pp. 316 331, Mar. 2002. [6] Z. Xu, Q. J. Gu and M.-C. F. Chang, 200 GHz CMOS amplifier working close to device ft, Electronics Letters, vol. 47, no. 11, pp. 639 641, May 2011. [7] M. Seo, B. Jagannathan, J. Pekarik, and M. J. W. Rodwell, A 150 GHz amplifier with 8 db gain and +6 dbm Psat in digital 65 nm CMOS using dummy-prefilled microstrip lines, IEEE J. Solid-State Circuits, vol. 44, no. 12, pp. 3410 3421, Dec. 2009. [8] Z. Xu, Q. J. Gu, and M.-C. F. Chang, A three stage, fully differential 128-157 GHz CMOS amplifier with wide band matching, IEEE Micorw. Wireless Compon. Lett., vol. 21, no. 10, pp. 550 552, Oct. 2011. [9] A. Tang, D. Murphy, F. Hsiao, Q. J. Gu, Z. Xu, G. Virbila, Y.-H. Wang, H. Wu, L. Nan, Y.-C. Wu, and M.-C. F. Chang, A CMOS 135-150 GHz 0.4 dbm EIRP transmitter with 5.1 db P1dB extension using IF envelope feed-forward gain compensation, in IEEE MTT-S Int. Microwave Symp. Dig., 2012, pp. 10 12. [10]S. T. Nicolson, A. Tomkins, K. W. Tang, A. Cathelin, D. Belot, and S. P. Voinigescu, A 1.2V, 140GHz receiver with on-die antenna in 65 nm CMOS, in Proc. IEEE Radio Frequency Integrated Circuits Symp., 2008, pp. 229 232. [11]R. Fujimoto, M. Motoyoshi, K. Takano, and M. Fujishima, A 120 GHz / 140 GHz dual-channel ASK receiver using standard 65 nm CMOS technology, in Proc. Eur. Microw. Conf., 2011, pp. 628 631. 15
CIC 103 5 27 (Automotive Transient Immunity Tester, TESEQ NSG5500) ISO 7637-2 (2004) ISO 7637-2(2011) ISO 16750-2(2010) http://ems.cic.org.tw/ebs/onlinebooking/init.action (06)2087971 107 16
103! IC IC IC 10 40 http://www.cic.narl.org.tw/ CIC 26 8 511 5,000 3,000 10,000 50% 70% 3 300 (1) (2) 03-5774064 300 26 7 1 80 60 03-577-3693 144 E-Mail: huyjen@narlabs.org.tw FAX 03-5774064 26 7 17
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103 e-learning 103 CIC http://www.cic.org.tw/ 103 5 5 10:00 103 5 25 http://www.cic.org.tw/ e-learning 流 劉 03-577-3693 144 E-Mail: huyjen@cic.narl.org.tw 6 9 11 5/5~5/25 8/4~8/24 10/6~10/26 6/2~6/15 9/1~9/14 11/03~11/16 19
103E001-B HSPICE 103E002-B Full-Custom IC Design Concept 103E003-B RF CMOS IC Design 103E004-B Verdi fundamental and Siloti full-chip-simulation training 103E005-B LakerADP+LakerL3 SDL flow training 103E006-B Advanced Design System - Fundamentals 103E007-B CMOS BioMEMS Sensing Technology 103E008-B Sensor Readout Circuit Technology 103E009-B RF 103E010-B Advanced Design System - Momentum 103E011-B Digital IC Testing Step-by-Step with Verigy 93000 103E012-B Step Into Electronic System Level Design 103E013-B FPGA Design Fundamentals for Altera 103E014-B Logic Synthesis (Synopsys) 103E015-B Cell-Based IC Physical Design and Verification with IC Compiler 103E016-B Brief Introduction of Cell-based Design 103E017-B T18 103E018-B TSMC 0.35UM 20
~103 ~ / 4 19 103 400 21
T25HVG2-103B IC ( )/ ( ) T25HVG2-103B-A0001, 1.900*1.900 T25HVG2-103B-A0002 / 1.635*1.335 T25HVG2-103B-A0003 1.900*0.955 T25HVG2-103B-A0004, 5.900*4.900 T25HVG2-103B-A0005 SAW 0.435*0.435 T25HVG2-103B-A0007 20V 1.402*1.900 T25HVG2-103B-A0008 LED open/short 1.700*1.300 T25HVG2-103B-A0009 0.25um T25HVG2-103B-A0010, 0.646*1.900 1.900*2.300 T25HVG2-103B-A0012 8-bit LED 1.500*1.250 T25HVG2-103B-A0017 1.900*0.900 T25HVG2-103B-A0018 1.132*1.161 T25HVG2-103B-A0020 1.950*1.850 T25HVG2-103B-A0021 1.126*0.868 T25HVG2-103B-A0022 T25HVG2-103B-A0023 T25HVG2-103B-A0024 2.640*1.900 1.947*1.984 1.347*1.453 T25HVG2-103B-E0001 0.900*1.200 T25HVG2-103B-I0001 3.229*1.900 22
Wafer Mapping (IC ) SiGe18-103B IC ( )/ ( ) SiGe18-103B-A0001 SiGe18-103B-A0003 SiGe BiC- MOS Q 5/60 GHz 1.050*0.356 2.527*1.625 SiGe18-103B-A0004 SiGe BiCMOS 0.624*0.996 SiGe18-103B-A0007 5 GHz / 60 GHz 2.652*1.708 SiGe18-103B-A0008 5 GHz 1.102*0.836 SiGe18-103B-A0010 1.500*1.500 SiGe18-103B-A0011 0.892*1.025 SiGe18-103B-A0012 1.392*1.400 SiGe18-103B-A0014 PCSNIM 2.4/5GHz 0.959*0.862 SiGe18-103B-A0016 3-10GHz 0.969*0.778 SiGe18-103B-A0018 Ku 1.296*0.855 SiGe18-103B-P0001 10 Gb/ s 0.450*0.650 SiGe18-103B-P0002 K 0.850*0.475 SiGe18-103B-P0003 Ku 0.945*0.470 SiGe18-103B-E0001 (III) 0.511*0.463 23
SiGe18-103B-E0002 ( ) 0.770*0.899 SiGe18-103B-E0004 ( ) 0.706*0.675 SiGe18-103B-E0005 ( ) 0.868*0.857 SiGe18-103B-E0006 ( ) 0.987*0.910 SiGe18-103B-E0007 ( ) 0.508*0.300 SiGe18-103B-E0008 ( ) 0.723*0.985 SiGe18-103B-E0009 ( ) 0.837*0.639 SiGe18-103B-E0010 ( ) 1.187*1.027 Wafer Mapping (IC ) 24
P15-103A ( )/ ( ) P15-103A-A0001 1.500*1.000 P15-103A-A0003 X 1.000*1.000 P15-103A-A0004 24 GHz 1.000*1.000 P15-103A-A0005 K-Band 1.000*1.000 P15-103A-A0006 5.8GHz 1.000*1.000 P15-103A-A0007 2.4GHz 1.000*1.000 P15-103A-A0008 1.000*2.000 P15-103A-A0009 1.500*2.000 P15-103A-A0010 LNA phemt 2.000*1.000 P15-103A-A0011 峯 1.000*1.000 P15-103A-A0012 峯 1.500*1.000 P15-103A-P0001 PHEMT ISM 1.500*1.000 25
Wafer Mapping (IC ) 26
TN40G-103A ( )/ ( ) TN40G-103A- P0001a TN40G-103A- P0002 TN40G-103A- P0003 TN40G-103A- P0004 2.065*2.064 THz 0.600*0.600, 6 2-bit 12.5 1.863*0.723 0.789*0.496 Wafer Mapping (IC ) 27