DG12N60 N 沟道增强型场效应晶体管 N-CHANNEL ENHANCEMENT MODE MOSFET 版本号 201603-A 产品概述 General Description DG12N60 是 N 沟道增强型场效应晶体管, 应用了东晨电子的相关专利技术, 采用自对准平面工艺及先进的终端耐压技术, 降低了导通损耗, 提高了开关特性, 增强了雪崩耐量 该产品能应用于多种功率开关电路, 使得电源能效更高, 系统更加小型化 DG12N60 is an N-channel enhancement mode MOSFET, which is produced using Dongchen Electronics s proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for higher efficiency and system miniaturization. 主要参数 MAIN CHARACTERISTICS V DSS 600 V ID 12 A RDS(ON) 0.53 Ω Crss 30 pf 封装 Package 86-510-87136806 1 /10 http://www.jsdgme.com
绝对额定值 ABSOLUTE MAXIMUM RATINGS (Tc=25 ) 漏极 - 源极直流电压 Drain-Source Voltage 连续漏极电流 ContinuesDrain Current 脉冲漏极电流 ( 注 1) Plused DrainCurrent (note1) 最高栅源电压 Gate-to-Source Voltage 单脉冲雪崩能量 ( 注 2) SinglePulsed AvalancheEnergy(note2) 雪崩电流 ( 注 1) Avalanche Current (note1) 重复雪崩能量 ( 注 1) Repetitive Avalanche Energy(note1) 二极管反向恢复电压变化速率 ( 注 3) PeakDiode Recovery(note3) 耗散功率 PowerDissipation ID PD Tc=25 数值 Value VDSS 600 V Tc=25 12* A Tc=100 7.2* IDM 48 A V GS ±30 V EAS 600 mj I AR 10 A EAR 20 mj dv/dt 4.5 V/ns TO-220 240 W TO-220F 50 耗散功率减额因子 PowerDissipationDeratingFactor PD(DF) Above 25 TO-220 2.0 TO-220F 0.4 W/ 最高结温及存储温度 Operatingand Storage Temperature Range 引线最高焊接温度 imumtemperature for Soldering TJ,TSTG 150,-55~+150 TL 300 热特性 THERMAL CHARACTERIASTIC 结到管壳的热阻 Thermal Resistance,JunctiontoCase Rth(j-c) TO-220/TO- 262 0.52 TO-220F 2.5 /W 结到环境的热阻 Thermal Resistance,JunctiontoAmbient Rth(j-A) TO-220 62.5 TO-220F 62.5 /W * 漏极电流由最高结温限制 Draincurrentlimitedbymaximumjunctiontemperature 86-510-87136806 2 /10 http://www.jsdgme.com
电特性 ELECTRICAL CHARACTERISTICS 关断特性 Off-Characteristics 漏极 - 源极击穿电压 Drain-Source BreakdownVoltage 击穿电压温度特性 Breakdown Voltage Temperature Coefficient 测试条件 TestsConditions 最小 Min 典型 Type BVDSS I D=250μA, V GS=0V 600 - - V BV DSS/ TJ ID=250μA, referenced to 25-0.7 - V/ 零栅压下漏极漏电流 Zero GateVoltage Drain Current IDSS VDS=600V,VGS=0V, TC=25 - - 1 VDS=480V, TC=125 - - 10 μa 正向栅极体漏电流 Gate-bodyleakage current, forward 反向栅极体漏电流 Gate-bodyleakage current, reverse IGSSF VDS=0V, VGS =30V - - 100 na IGSSR VDS=0V, VGS = -30V - - -100 na 通态特性 On-Characteristics 阈值电压 GateThreshold Voltage 静态导通电阻 Static Drain-Source On-Resistance 正向跨导 ForwardTransconductance 测试条件 TestsConditions 最小 Min 典型 Type VGS(th) VDS = VGS, ID=250μA 2.0-4.0 V R DS(ON) V GS=10V, I D=6.0A - 0.53 0.65 Ω gfs VDS= 40V, ID=6.0A(note4) - 10 - S 动态特性 Dynamic Characteristics 测试条件 TestsConditions 最小 Min 典型 Type 输入电容 Inputcapacitance Ciss - 1860 2507 pf 输出电容 Output capacitance 反向传输电容 Reverse transfercapacitance Coss VDS=25V, VGS =0V, f=1.0mhz - 188 243 pf Crss - 30 48 pf 86-510-87136806 3 /10 http://www.jsdgme.com
开关特性 Switching Characteristics 测试条件 TestsConditions 最小 Min 典型 Type 延迟时间 Turn-Ondelaytime td(on) - 78 102 ns 上升时间 Turn-Onrisetime tr VDD=300V, ID=12A, RG=25Ω - 133 175 ns 延迟时间 Turn-Offdelaytime td(off) (note 4,5) - 233 310 ns 下降时间 Turn-OffFalltime tf - 105 180 ns 栅极电荷总量 TotalGateCharge Qg - 55 70 nc 栅 - 源电荷 Gate-Sourcecharge Qgs VDS=480V, ID=12A, VGS=10V (note 4,5) - 10 - nc 栅 - 漏电荷 Gate-Draincharge Qgd - 25 - nc 漏 - 源二极管特性及额定值 Drain-Source Diode Characteristics and imum Ratings 正向连续电流 imum ContinuousDrain-Source Diode ForwardCurrent 正向脉冲电流 imum PulsedDrain-Source Diode ForwardCurrent 正向压降 Drain-Source DiodeForward Voltage 测试条件 TestsConditions 最小 Min 典型 Type IS - - 12 A I SM - - 48 A VSD VGS=0V, IS=12A - - 1.4 V 反向恢复时间 Reverse recoverytime 反向恢复电荷 Reverse recoverycharge trr - 450 - ns VGS=0V, IS=12A dif/dt=100a/μs (note 4) Qrr - 4.9 - μc 注释 : 1: 脉冲宽度由最高结温限制 2:L=11mH, I AS=10A, V DD=50V, R G=25 Ω, 起始结温 T J=25 3:I SD 12A, di/dt 300A/μs, V DD BV DSS, 起始结温 T J=25 4: 脉冲测试 : 脉冲宽度 300μs, 占空比 2% 5: 基本与工作温度无关 Notes: 1:Pulse width limited by maximum junction temperature 2:L=11mH, I AS=10A, V DD=50V, R G=25Ω, Starting T J=25 3:I SD 12A, di/dt 300A/μs, V DD BV DSS, Starting T J=25 4:Pulse Test: Pulse Width 300μs, Duty Cycle 2% 5:Essentially independent of operating temperature 86-510-87136806 4 /10 http://www.jsdgme.com
特征曲线 ELECTRICAL CHARACTERISTICS (curves) 图 1. 输出特性曲线 Fig. 1 On-State Characteristics 图 2. 传输特性曲线 Fig. 2 Transfer Characteristics 图 3. 击穿电压随温度变化曲线 Fig. 3 Breakdown Voltage Variation vs Temperature 图 4. 导通电阻随温度变化曲线 Fig. 4 On-Resistance Variation vs Temperature 图 5. 电容特性曲线 Fig. 5 Capacitance Characteristics 图 6. 栅电荷特性曲线 Fig. 6 Gate Charge Characteristics 86-510-87136806 5 /10 http://www.jsdgme.com
图 7. 安全工作区 Fig. 7 imum Safe Operating Area 图 8. 漏极电流随温度变化曲线 Fig. 8 imum Drain Current vs Case Temperature 图 9. 瞬态热响应曲线 (TO-220) Fig. 9 Transient Thermal Response Curve(TO-220) 图 10. 瞬态热响应曲线 (TO-220F) Fig. 10 Transient Thermal Response Curve(TO-220F) 86-510-87136806 6 /10 http://www.jsdgme.com
测试电路及波形 TEST CIRCUITS AND WAVEFORMS 图 11. 开关特性测试 Fig.11 Resistive Switching Test Circuit & Waveforms 图 12. 栅电荷测试 Fig.12 Gate Charge Test Circuit & Waveform 图 13. 雪崩能量测试 Fig.13 Unclamped Inductive Switching Test Circuit & Waveforms 86-510-87136806 7 /10 http://www.jsdgme.com
封装尺寸 TPACKAGE MECHANICAL DATA 86-510-87136806 8 /10 http://www.jsdgme.com
产品标记说明 Product labels 修改履历 修改时间 Date Revision History 修改内容 Content modification 旧版本 Last Rev. 新版本 New Rev. 注意事项 Note 1 在应用中, 如果超出额定值使用势必会导致器件损伤, 甚至造成永久失效, 这将影响到整机 系统的可靠性 建议在器件的 80% 额定值范围内使用 2 在安装散热片的时候, 请注意扭矩及散热片的平整度 3 VDMOS 是静电敏感型器件, 在使用过程中需要采取必要的保护措施, 以防器件遭受静电损伤 4 本说明书如有版本变更不另行通知 1. Exceeding the maximun ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximun ratings of the device. 86-510-87136806 9 /10 http://www.jsdgme.com
2. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. 3. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. 4. This publication is made by Dongchen Electronics and subject to regular change without notice. 86-510-87136806 10 /10 http://www.jsdgme.com