NANO COMMUNICATION 23 No.3 90 CMOS 94/188 GHz 23 90 CMOS 94/188 GHz A 94/188 GHz Dual-Band VCO with Gm- Boosted Push-Push Pair in 90nm CMOS 90 CMOS 94/188GHz LC class-b 0.70 0.75 mm 2 pad 1 V 19.6 ma (ƒ o ) 92.73 ~ 95.17GHz (2ƒ o ) 185.5 ~ 190.3 GHz -8.23 dbm (ƒ o ) -24.8 dbm (2ƒ o ) 1 MHz -92.49 dbc/hz Abstract In this study, a 94/188 GHz Voltage Controlled Oscillator (VCO) was designed by a standard 90 nm CMOS technology. This study proposes a LC-VCO with a gm- boosted push-push pair. The gm-boosted push-push pair obtains the highest conversion efficiency using class-b amplifier. The circuit occupies a chip area of 0.70 0.75 mm 2 including the output buffers and pads. At a supply voltage of 1 V and the supply current is 19.6 ma, the fabricated LC-VCO provides a frequency tuning range from 92.73-95.17GHz at the fundamental port (ƒ o ), and a frequency tuning range from 185.5~190.3 GHz at the push-push port (2ƒ o ). The circuit delivers a maximum output power of -8.23 dbm (ƒ o ) and -24.8 dbm (2ƒ o ) and the phase noise is -92.49 dbc/hz at 1 MHz frequency offset..
4 24 Keywords CMOSLC CMOS VCO LC Source-degeneration Gm-boosted Push-push Pair (Silicon-based IC Manufacturing Technology) CMOS/ BiCMOS (Millimeter-wave (MMW)) 60-GHz 24/77- GHz (Automatic Cruise Control, ACC) 94-GHz ft VCO SiGe HBT InP HBT CMOS 0.13 m 90 nm 65 nm 40 nm 28 nm IC 77 GHz 94 GHz VCO [1-2] LC CMOS 1 NMOS 1 (a) (b) LC-tank NMOS NMOS
NANO COMMUNICATION 23 No. 3 90 CMOS 94/188 GHz 25 (LC-tank) LC [3] 1(b) [1] LC [3-8] 2(b) Zin Distributed LC L1=L2=L/2 C1=C2=C/2 Distributed LC LC 2(a) 1.24 2 (a) LC (b) LC [1] 3 V ov V o i T 3 90nm CMOS DC RF pads 0.70
4 26-8.23 ~ -8.52 dbm 4(c) 1 MHz -91.26 to -92.46 dbc/hz 3.2 188.3-192.4 GHz 5(a) 185.5 ~ 190.3 GHz 5(b) -24.8 ~ -30.43 dbm 5(c) 1 MHz -91.26 to -92.46 dbc/hz FOM [4]: 4 (a) (b) (c) 0.75 mm 2 1V 19.6 mw 0.8V 12.16 mw 5 (a) (b) (c) 3.1 94.15-96.20 GHz 4(a) 92.73 ~ 95.17GHz 4(b) L( ƒ) fo ƒ dbc/hz Pdc
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