主要参数 MAIN CHARACTERISTICS ID 28.0A 封装 Package VDSS 200 V Rdson-max (@Vgs=10V) 85mΩ Qg-typ 103nC N 沟道增强型场效应晶体管 N- CHANNEL MOSFET 用途 高频开关电源 电子镇流器 UPS 电源 APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge UPS 产品特性 低栅极电荷 低 C rss ( 典型值 81pF) 开关速度快 产品全部经过雪崩测试 高抗 dv/dt 能力 RoHS 产品 FEATURES Low gate charge Low C rss (typical 81pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product 订货信息 ORDER MESSAGE 订货型号 Order codes 印 记 封 装 有卤 - 条管 无卤 - 条管 有卤 - 编带 无卤 - 编带 Marking Package Halogen-Tube Halogen-Free-Tube Halogen-Reel Halogen-Free-Reel C-C-B C-C-BR N/A N/A C TO-220C F-F-B F-F-BR N/A N/A F TO-220MF S-S-B S-S-BR S-S-A S-S-AR S TO-263 版本 :201806E 1/11
绝对最大额定值 ABSOLUTE RATINGS (Tc=25 ) 数值 Value 项 目 符号 C 单位 Parameter Symbol S F Unit 最高漏极 - 源极直流电压 Drain-Source Voltage V DSS 200 V 连续漏极电流 Drain Current -continuous 最大脉冲漏极电流 ( 注 1) Drain Current -pulse (note 1) 最高栅源电压 Gate-Source Voltage 单脉冲雪崩能量 ( 注 2) Single Pulsed Avalanche Energy(note 2) 雪崩电流 ( 注 1) Avalanche Current (note 1) 重复雪崩能量 ( 注 1) Repetitive Avalanche Current (note 1) 二极管反向恢复最大电压变化速率 ( 注 3) Peak Diode Recovery dv/dt (note 3) I D T=25 T=100 28.0 28.0* A 17.7 17.7* A I DM 112 112* A V GSS ±30 V E AS 588 mj I AR 28 A E AR 15.8 5.0 mj dv/dt 5.5 V/ns 耗散功率 Power Dissipation 最高结温及存储温度 Operating and Storage Temperature Range 引线最高焊接温度 Maximum Lead Temperature for Soldering Purposes * 漏极电流由最高结温限制 P D T C =25 -Derate above 25 *Drain current limited by maximum junction temperature 158 50 W 1.265 0.40 W/ T J,T STG -55~+150 T L 300 版本 :201806E 2/11
电特性 ELECTRICAL CHARACTERISTIC 项目 Parameter 关态特性 Off Characteristics 漏 - 源击穿电压 Drain-Source Voltage 击穿电压温度特性 Breakdown Voltage Temperature Coefficient 零栅压下漏极漏电流 Zero Gate Voltage Drain Current 正向栅极体漏电流 Gate-body leakage current, forward 反向栅极体漏电流 Gate-body leakage current, reverse 通态特性 On-Characteristics 阈值电压 Gate Threshold Voltage 静态导通电阻 Static Drain-Source On-Resistance 正向跨导 Forward Transconductance 动态特性 Dynamic Characteristics 输入电容 Input capacitance 输出电容 Output capacitance 反向传输电容 Reverse transfer capacitance 符号 Symbol 测试条件 Tests conditions 最小典型最大单位 Min Typ Max Units BV DSS I D =250μA, V GS =0V 200 - - V ΔBV DSS /ΔT J 25 I DSS I D =250μA, referenced to - 0.19 - V/ V DS =200V, V GS =0V, T C =25 - - 1 μa V DS =160V, T C =125 - - 10 μa - I GSSF V DS =0V, V GS =30V - 100 na - I GSSR V DS =0V, V GS =-30V - -100 na V GS(th) V DS = V GS, I D =250μA 2.0-4.0 V R DS(ON) V GS =10V, I D =14.0A - 68 85 mω g fs V DS = 40V, I D =14.0A(note 4) - 24 - S V DS =25V, C iss - 2879 3742 pf V GS =0V, f=1.0mh Z C oss - 362 470 pf C rss - 81 105 pf 版本 :201806E 3/11
Reverse recovery charge 热特性 THERMAL CHARACTERISTIC 电特性 ELECTRICAL CHARACTERISTICS 项 目 符号 测试条件 最小典型最大 单位 Parameter Symbol Tests conditions Min Typ Max Units 开关特性 Switching Characteristics 延迟时间 Turn-On delay time t d (on) V DD =100V,I D =28A,R G =25Ω - 28 69 ns 上升时间 Turn-On rise time t r V GS =10V - 251 494 ns 延迟时间 Turn-Off delay time t d (off) (note 4,5) - 309 617 ns 下降时间 Turn-Off Fall time t f - 220 412 ns 栅极电荷总量 Total Gate Charge Q g V DS =160V, - 103 136 nc 栅 - 源电荷 Gate-Source charge Q gs I D =28A - 16 - nc 栅 - 漏电荷 Gate-Drain charge V GS =10V(note 4,5) - 53 - nc Q gd 漏 - 源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings 正向最大连续电流 Maximum Continuous Drain-Source I S - - 28 A Diode Forward Current 正向最大脉冲电流 Maximum Pulsed Drain-Source Diode I SM - - 112 A Forward Current 正向最大连续电流 Maximum Continuous Drain-Source Diode Forward Current V SD V GS =0V, I S =28A - 1.4 V 反向恢复时间 Reverse recovery time 反向恢复电荷 t rr 218 ns V GS =0V, I S =28A Q rr di F /dt=100a/μs (note 4) 1.91 μc 最大值项目符号单位 Value Parameter Symbol Unit C/S F 结到管壳的热阻 Rth(j-c) 0.79 2.48 /W Thermal Resistance, Junction to Case 结到环境的热阻 Rth(j-A) 62.5 /W Thermal Resistance, Junction to Ambient 注 : 1: 脉冲宽度由最高结温限制 2:L=1.5mH, I AS=28A, V DD=50V, R G=25 Ω, 起始结温 T J=25 3:I SD 28A,di/dt 200A/μs, VDD BV DSS, 起始结温 T J=25 4: 脉冲测试 : 脉冲宽度 300μs, 占空比 2% 5: 基本与工作温度无关 Notes: 1:Pulse width limited by maximum junction temperature 2:L=1.5mH, I AS=28A, V DD=50V, R G=25 Ω,Starting T J=25 3:I SD 28A,di/dt 200A/μs, VDD BV DSS, Starting T J=25 4:Pulse Test:Pulse Width 300μs, Duty Cycle 2% 5:Essentially independent of operating temperature 版本 :201806E 4/11
Capacitance [pf] Capacitance Characteristics 5.0x10 3 4.5x10 3 4.0x10 3 3.5x10 3 3.0x10 3 2.5x10 3 2.0x10 3 1.5x10 3 1.0x10 3 5.0x10 2 0.0 C rss C oss C iss 10 0 10 1 C iss =C gs +C gd (C ds =shorted) C oss =C ds +C gd C rss =C gd V D S Drain-Source Voltage [V] V GS Gate Source Voltage[V] 12 10 8 6 4 2 Gate Charge Characteristics V DS =100V V DS =40V V DS =160V Notes: I D =28A 0 0 10 20 30 40 50 60 70 80 90 100 110 120 Q g Toltal Gate Charge [nc] 版本 :201806E 5/11
Maximum Safe Operating Area C/S Maximum Safe Operating Area F 版本 :201806E 6/11
特征曲线 ELECTRICAL CHARACTERISTICS (curves) Transient Thermal Response Curve (Zthjc) For C/S Transient Thermal Response Curve (Zthjc) For F 版本 :201806E 7/11
外形尺寸 PACKAGE MECHANICAL DATA TO-220C 单位 Unit:mm 版本 :201806E 8/11
外形尺寸 PACKAGE MECHANICAL DATA TO-220MF 单位 Unit:mm 版本 :201806E 9/11
外形尺寸 PACKAGE MECHANICAL DATA TO-263 单位 Unit:mm 版本 :201806E 10/11
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