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FSBF15CH60BT Motion SPM 3 系列特性通过 UL 第 E209204 号认证 (UL1557) 600 V - 15 A 三相 IGBT 逆变器, 包含栅极驱动和保护的控制 IC 低损耗短路额定的 IGBT 内置自举二极管和专用的 Vs 引脚以简化印刷电路板布局低端 IGBT

的栅极驱动以最小化电磁干扰和能量损耗同时也提供多重模组保护特性, 集成欠压闭锁, 过流保护和故障报告内置的高速 HVIC 只需要一个单电源电压, 将逻辑电平栅极输入转化为适合驱动模块内部 IGBT 的高电压, 高电流驱动信号独立的 IGBT 负端在每个相位均有效, 可支持大量不同种类的控制算法应用运动控制 -

2 FSBF15CH60BT Motion SPM 3 系列特性通过 UL 第 E 号认证 (UL1557) 600 V - 15 A 三相 IGBT 逆变器, 包含栅极驱动和保护的控制 IC 低损耗短路额定的 IGBT 内置自举二极管和专用的 Vs 引脚以简化印刷电路板布局低端 IGBT 的独立发射极开路引脚用于三相电流感测单接地电源供电绝缘等级 :2500 V rms / 分钟概述 2014 年 8 月 FSBF15CH60BT 是一款先进的 Motion SPM 3 模块, 为交流感应 BLDC 和 PMSM 电机提供非常全面的高性能逆变器输出平台这些模块综合优化了内置 IGBT 的栅极驱动以最小化电磁干扰和能量损耗同时也提供多重模组保护特性, 集成欠压闭锁, 过流保护和故障报告内置的高速 HVIC 只需要一个单电源电压, 将逻辑电平栅极输入转化为适合驱动模块内部 IGBT 的高电压, 高电流驱动信号独立的 IGBT 负端在每个相位均有效, 可支持大量不同种类的控制算法应用运动控制 - 家用设备 / 工业电机相关资料 AN Motion SPM 3 Series Users Guide 图 1. 封装概览封装标识与定购信息器件器件标识封装包装类型数量 FSBF15CH60BT FSBF15CH60BT SPMJA-027 Rail 飞兆半导体公司 1

3 集成的功率功能 600 V - 15 A IGBT 逆变器, 适用于三相 DC / AC 功率转换 ( 请参阅图 3) 集成的驱动保护和系统控制功能对于逆变器高端 IGBT: 栅极驱动电路高压隔离的高速电平转换控制电路欠压锁定保护 (UVLO) 可用自举电路示例如图 12 和图 13 所示对于逆变器低端 IGBT: 栅极驱动电路短路保护 (SCP) 控制电源欠压锁定保护 (UVLO) 故障信号 : 对应 UVLO ( 低端电源 ) 和短路故障输入接口 : 高电平有效接口, 可用于 3.3 / 5 V 逻辑电平, 施密特触发脉冲输入引脚布局图 2. 俯视图 2007 飞兆半导体公司 2

4 引脚描述引脚号引脚名引脚描述 1 V CC(L) IC 和 IGBT 驱动的低端公共偏压 2 公共电源接地 3 IN (UL) 低端 U 相的信号输入 4 IN (VL) 低端 V 相的信号输入 5 IN (WL) 低端 W 相的信号输入 6 V FO 故障输出 7 C FOD 设置故障输出持续时间的电容 8 C SC 短路电流感测输入电容 ( 低通滤波器 ) 9 IN (UH) 高端 U 相的信号输入 10 V CC(H) IC 和 IGBT 驱动的高端公共偏压 11 V B(U) U 相 IGBT 驱动的高端偏压 12 V S(U) U 相 IGBT 驱动的高端偏压接地 13 IN (VH) 高端 V 相的信号输入 14 V CC(H) IC 和 IGBT 驱动的高端公共偏压 15 V B(V) V 相 IGBT 驱动的高端偏压 16 V S(V) V 相 IGBT 驱动的高端偏压接地 17 IN (WH) 高端 W 相的信号输入 18 V CC(H) IC 和 IGBT 驱动的高端公共偏压 19 V B(W) W 相 IGBT 驱动的高端偏压 20 V S(W) W 相 IGBT 驱动的高端偏压接地 21 N U U 相的直流输入负端 22 N V V 相的直流输入负端 23 N W W 相的直流输入负端 24 U U 相输出 25 V V 相输出 26 W W 相输出 27 P 直流输入正端 2007 飞兆半导体公司 3

5 内部等效电路与输入 / 输出引脚 (19) V B(W) (18) V CC(H) (17) IN (WH) (20) V S(W) (15) V B(V) (14) V CC(H) (13) IN (VH) (16) V S(V) (11) V B(U) (10) V CC(H) (9) IN (UH) (12) V S(U) VB VCC IN VB VCC IN VB VCC IN OUT VS OUT VS OUT VS P (27) W (26) V (25) U (24) (8) C SC (7) C FOD (6) V FO C(SC) OUT(WL) C(FOD) VFO N W (23) (5) IN (WL) IN(WL) OUT(VL) (4) IN (VL) IN(VL) N V (22) (3) IN (UL) (2) (1) V CC(L) IN(UL) VCC OUT(UL) V SL N U (21) 图 3. 内部框图 1. 逆变器的低端由三个 IGBT 及相应的续流二极管和一个控制 IC 组成具有栅极驱动和保护功能 2. 逆变器的功率端由逆变器的四个直流母线输入端和三个输出端组成 3. 逆变器高端由三个 IGBT 以及相应的续流二极管和驱动 IC 组成 2007 飞兆半导体公司 4

6 绝对最大额定值 (T J = 25 C, 除非另有说明 ) 逆变器部分符号参数工作条件额定值单位 V PN 电源电压施加在 P - N U, N V, N W 之间 450 V V PN ( 浪涌 ) 电源电压 ( 浪涌 ) 施加在 P - N U, N V, N W 之间 500 V V CES 集电极 - 发射极之间电压 600 V ± I C 单个 IGBT 的集电极电流 T C = 25 C, T J 150 C 15 A ± I CP 单个 IGBT 的集电极电流 ( 峰值 ) T C = 25 C, T J 150 C, 脉冲宽度小于 1 ms 30 A P C 集电极功耗 T C = 25 C, 单个芯片 25 W T J 工作结温 ( 注 1) - 40 ~ 150 C 1. Motion SPM 3 产品中集成的功率芯片的最大结温额定值为 150 C ( 当 T C 125 C) 控制部分符号参数工作条件额定值单位 V CC 控制电源电压施加在 V CC(H), V CC(L) - 之间 20 V V BS 高端控制偏压施加在 V B(U) - V S(U), V B(V) - V S(V), 20 V V B(W) - V S(W) V IN 输入信号电压施加在 IN (UH), IN (VH), IN (WH), IN (UL), IN (VL), -0.3 ~ V CC V IN (WL) - 之间 V FO 故障输出电源电压施加在 V FO - 之间 -0.3 ~ V CC V I FO 故障输出电流 V FO 引脚处的灌电流 5 ma V SC 电流感测输入电压施加在 C SC - 之间 -0.3 ~ V CC V 自举二极管部分符号参数工作条件额定值单位 V RRM 最大重复反向电压 600 V I F 正向电流 T C = 25 C, T J 150 C 0.5 A I FP 正向电流 ( 峰值 ) T C = 25 C, T J 150 C 脉冲宽度小于 1 ms 2.0 A T J 工作结温 -40 ~ 150 C 整个系统符号参数工作条件额定值单位 V PN(PROT) 自我保护电源电压限制 V CC = V BS = 13.5 ~ 16.5 V 400 V ( 短路保护能力 ) T J = 150 C, 非重复性, < 2 μs T C 模块壳体工作温度 -40 C T J 150 C, 见图 2-40 ~ 125 C T STG 存储温度 -40 ~ 125 C V ISO 绝缘电压 60 Hz, 正弦波形, 交流 1 分钟, 连接陶瓷基板到引脚 2500 V rms 热阻符号参数工作条件最小值典型值最大值单位 R th(j-c)q 结点 - 壳体的热阻逆变器 IGBT 部分 ( 每 1 / 6 模块 ) C / W R th(j-c)f 逆变器 FWD 部分 ( 每 1 / 6 模块 ) C / W 2. 关于壳体温度 (T C ) 的测量点, 参见图飞兆半导体公司 5

7 电气特性 (T J = 25 C, 除非另有说明 ) 逆变器部分符号参数工作条件最小值典型值最大值单位 V CE(SAT) 集电极 - 发射极间饱和电压 V CC = V BS = 15 V V IN = 5 V I C = 15 A, T J = 25 C V V F FWD 正向电压 V IN = 0 V I F = 15 A, T J = 25 C V HS t ON 开关时间 V PN = 300 V, V CC = V BS = 15 V s t I C = 15 A C(ON) s V IN = 0 V 5 V, 电感负载 t OFF ( 注 3) s t C(OFF) s t rr s LS t ON V PN = 300 V, V CC = V BS = 15 V s I C = 15 A t C(ON) s V IN = 0 V 5 V, 电感负载 t OFF ( 注 3) s t C(OFF) s t rr s I CES 集电极 - 发射极间漏电流 V CE = V CES ma 3. t ON 和 t OFF 包括模块内部驱动 IC 的传输延迟时间 t C(ON) 和 t C(OFF) 指在内部给定的栅极驱动条件下, IGBT 本身的开关时间详细信息, 请参见图 4 控制部分符号参数工作条件最小值典型值最大值单位 I QCCL V CC 静态电源电流 V CC = 15 V V CC(L) ma IN (UL, VL, WL) = 0 V I QCCH V CC = 15 V IN (UH, VH, WH) = 0 V V CC(H) A I QBS V BS 静态电源电流 V BS = 15 V IN (UH, VH, WH) = 0 V V B(U) - V S(U), V B(V) - V S(V), A V B(W) - V S(W) V FOH 故障输出电压 V SC = 0 V, V FO 电路 :4.7 k 至 5 V 上拉 V V FOL V SC = 1 V, V FO 电路 :4.7 k 至 5 V 上拉 V V SC(ref) 短路电流触发电平 V CC = 15 V ( 注 4) V TSD 过温保护 LVIC 的温度 C TSD 过温保护迟滞 LVIC 的温度 C UV CCD 电源电路欠压保护检测电平 V UV CCR 复位电平 V UV BSD 检测电平 V UV BSR 复位电平 V t FOD 故障输出脉宽 C FOD = 33 nf ( 注 5) ms V IN(ON) 导通阈值电压施加在 IN (UH), IN (VH), IN (WH), IN (UL), IN (VL), V V IN(OFF) 关断阈值电压 IN (WL) - 之间 V 4. 短路电流保护仅作用于低端 5. 故障输出脉宽 t FOD 取决于电容 C FOD 的值, 可采用下面的近似公式进行计算 :C FOD = 18.3 x 10-6 x t FOD [F] 2007 飞兆半导体公司 6

8 0 V IN V CE 100% I C t rr 100% I C I C V IN I C V CE t ON t OFF t C(ON) t C(OFF) V IN(ON) 10% I C 90% I C 10% V CE (a) turn-on V IN(OFF) 10% V CE 10% I C (b) turn-off 图 4. 开关时间的定义 SWITCHING LOSS(ON) VS. COLLECTOR CURRENT SWITCHING LOSS(OFF) VS. COLLECTOR CURRENT SWITCHING LOSS, E SW(ON) [uj] V CE =300V V CC =15V V IN =5V T J =25 T J =150 SWITCHING LOSS, E SW(OFF) [uj] V CE =300V V CC =15V V IN =5V T J =25 T J = COLLECTOR CURRENT, I c [AMPERES] COLLECTOR CURRENT, I c [AMPERES] 图 5. 开关损耗特性 ( 典型值 ) 2007 飞兆半导体公司 7

9 自举二极管部分符号参数工作条件最小值典型值最大值单位 V F 正向电压 I F = 0.1 A, T C = 25 C V t rr 反向恢复时间 I F = 0.1 A, T C = 25 C ns Built-in Bootstrap Diode V F -I F Characteristic I F [A] T C =25 o C V F [V] 6. 内置自举二极管其阻抗特性约为 15 图 6. 内置自举二极管特性推荐工作条件符号参数工作条件最小值典型值最大值单位 V PN 电源电压施加在 P - N U, N V, N W 之间 V V CC 控制电源电压施加在 V CC(H), V CC(L) - 之间 V V BS 高端偏压施加在 V B(U) - V S(U), V B(V) - V S(V), V B(W) - V S(W) V dv CC / dt, dv BS / dt 控制电源波动 -1-1 V / s t dead 防止桥臂直通的死区时间每个输入信号 s f PWM PWM 输入信号 -40 C T C 125 C, -40 C T J 150 C khz V SEN 电流感测产生的电压施加在 N U, N V, N W - 之间 ( 包括浪涌电压 ) -4 4 V 2007 飞兆半导体公司 8

10 机械特性和额定值参数工作条件最小值典型值最大值单位安装扭矩安装螺钉 :M3 建议 0.62 N m N m 器件平面度见图 m 重量 g ( + ) ( + ) 图 7. 平面度测量位置 2007 飞兆半导体公司 9

11 保护功能时序图 Input Signal Protection Circuit State Control Supply Voltage Output Current Fault Output Signal UV CCR RESET a1 a2 UV CCD SET a3 a4 a5 RESET a6 a7 a1 : 控制电源电压上升 : 当电压上升到 UV CCR 后, 等到下一个开通信号时, 对应的电路才开始动作 a2 : 正常工作 :IGBT 导通并加载负载电流 a3 : 欠压检测 (UV CCD ) a4 : 不论控制输入的条件, IGBT 都关断 a5 : 故障输出工作启动 a6 : 欠压复位 (UV CCR ) a7 : 正常工作 :IGBT 导通并加载负载电流图 8. 欠压保护 ( 低端 ) Input Signal Protection Circuit State RESET SET RESET Control Supply Voltage UV BSR b1 b2 UV BSD b3 b4 b5 b6 Output Current Fault Output Signal High-level (no fault output) b1: 控制电源电压上升 : 当电压上升到 UV BSR 后, 等到下一个输入信号时, 对应的电路才开始动作 b2: 正常工作 :IGBT 导通并加载负载电流 b3: 欠压检测 (UV BSD ) b4: 不论控制输入的条件, IGBT 都关闭, 且无故障输出信号 b5: 欠压复位 (UV BSR ) b6: 正常工作 :IGBT 导通并加载负载电流图 9. 欠压保护 ( 高端 ) 2007 飞兆半导体公司 10

12 Lower Arms Control Input Protection Circuit State SET RESET Internal IGBT Gate - Emitter Voltage Output Current c1 c4 c3 c2 SC c6 c7 c8 Sensing Voltage of Shunt Resistance SC Reference Voltage Fault Output Signal c5 CR Circuit Time Constant Delay ( 包含外部分流电阻和 CR 连接 ) c1 : 正常工作 :IGBT 导通并加载负载电流 c2 : 短路电流感测 (SC 触发 ) c3 : IGBT 栅极硬中断 c4 : IGBT 关断 c5 : 故障输出延时工作启动 : 故障输出信号的脉宽通过外部电容 C FO 设置 c6 : 输入 LOW :IGBT 关断状态 c7 : 输入 HIGH :IGBT 导通, 但是在故障输出有效的时间内, IGBT 不导通 c8 : IGBT 关断状态图 10. 短路电流保护 ( 仅适用于低端的工作 ) 2007 飞兆半导体公司 11

13 MCU +5 V R PF = 4.7 kω 100 Ω 100 Ω 100 Ω 1 nf C PF = 1 nf 1 nf 1 nf SPM,, IN (UH) IN (VH) IN (WH),, IN (UL) IN (VL) IN (WL) V FO 图 11. 推荐的 MCU I/O 接口电路 1. 每个输入端的 RC 耦合可能随着应用程序中使用的 PWM 控制方案和应用程序印刷电路板接线抗阻而改变 Motion SPM 3 产品的输入信号部分集成了典型值为 5 k 的下拉电阻因此, 当使用外部的滤波电阻时, 请注意该信号在输入端的压降 2. 逻辑输入与标准 CMOS 或者 LSTTL 的输出兼容 These values depend on PWM control algorithm. 15 V 22 µf 0.1 µf One-Leg Diagram of Motion SPM 3 Product Vcc IN VB HO VS P 1000 µf 1 µf Vcc IN OUT Inverter Output VSL N 图 12. 推荐的自举工作电路和参数 3. 在 V CC - 之间的陶瓷电容应大于 1 F, 并且应尽可能靠近 Motion SPM 3 产品的引脚 2007 飞兆半导体公司 12

14 M C U Gating WH Gating VH Gating UH RS RS RS CPS CPS CPS +5 V +15 V RF CBS C BS CBS CBSC C BSC CBSC (19) VB(W) (18) VCC(H) (17) IN(WH) (20) VS(W) (15) VB(V) (14) VCC(H) (13) IN(VH) (16) VS(V) (11) VB(U) (10) VCC(H) (9) IN(UH) (12) VS(U) VB VCC IN VB VCC IN VB VCC IN OUT VS OUT VS OUT VS P (27) W (26) V (25) U (24) M CDCS Vdc RPF CSC (8) CSC C(SC) OUT(WL) Fault RS CFOD (7) CFOD (6) VFO C(FOD) VFO NW (23) RSW Gating WL RS (5) IN(WL) IN(WL) OUT(VL) Gating VL RS (4) IN(VL) IN(VL) NV (22) RSV Gating UL RS (3) IN(UL) IN(UL) CBPF CPS CPS CPS CPF (2) (1) VCC(L) VCC OUT(UL) VSL NU (21) RSU C SP15 C SPC15 Inp ut S ig nal fo r Short- C irc uit P rotec tion W-Phase Current V-Phase Current U-Phase Current RFW RFV RFU CFW CFV CFU 1. 为了避免故障, 应尽可能缩短每个输入端的连线 ( 小于 2-3 cm) 图 13. 典型应用电路 2. 因为 Motion SPM 3 产品内部集成了一个具有特殊功能的 HVIC, 接口电路与 MCU 端口的直接耦合是可行的, 不需要任何光耦合器或变压器隔离 3. V FO 输出是集电极开路型该信号线应当采用 4.7 k 电阻上拉至 5V 电源的正极 ( 请参考图 11) 4. 推荐 C SP15 的取值应大于自举电容 C BS 的 7 倍左右 5. V FO 输出脉宽取决于连接在 C FOD ( 引脚 7) 和 ( 引脚 2) 之间的外部电容 (C FOD ) ( 示例 : 若 C FOD = 33 nf, 则 t FO = 1.8 ms( 典型值 )) 具体计算方法请参考说明 5 6. 输入信号为高电平有效在 IC 中, 有一个 5 k 的电阻将每一个输入信号线下拉接地应当采用 RC 耦合电路, 以避免输入信号振荡 R S C PS 时间常数应在 50~150 ns 的范围内选取 C PS 不应低于 1 nf ( 推荐 R S = 100, C PS = 1 nf) 7. 为避免保护功能出错, 应尽可能缩短 R F 和 C SC 周围的连线 8. 在短路保护电路中, R F C SC 的时间常数应在 1.5 ~ 2.0 s 的范围内选取 9. 每个电容都应尽可能地靠近 Motion SPM 3 产品的引脚安装 10. 为防止浪涌的破坏, 应尽可能缩短滤波电容和 P & GND 引脚间的连线推荐在 P 和 GND 引脚间使用 0.1 ~ 0.22 F 的高频无感电容 11. 在各种家用电器设备中, 几乎都用到了继电器在这些情况下, MCU 和继电器之间应留有足够的距离 12. C SPC15 应大于 1 F, 并尽可能靠近 Motion SPM 3 产品的引脚安装 2007 飞兆半导体公司 13

15 封装轮廓详图封装图纸作为一项服务, 提供给考虑飞兆半导体元件的客户具体参数可能会有变化, 且不会做出相应通知请注意图纸上的版本和 / 或日期, 并联系飞兆半导体代表核实或获得最新版本封装规格并不扩大飞兆公司全球范围内的条款与条件, 尤其是其中涉及飞兆公司产品保修的部分随时访问飞兆半导体在线封装网页, 可以获取最新的封装图纸 : 飞兆半导体公司 14

16 2007 飞兆半导体公司 15

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FNA41060 / FNA41060B2 Motion SPM 45 系列

FNA41060 / FNA41060B2 Motion SPM 45 系列 Motion SPM 45 系列特性通过 UL 第 E209204 号认证 (UL1557) 600 V - 10 A 三相 IGBT 逆变器, 包含栅极驱动和保护的控制 IC 使用陶瓷基板实现低热阻低损耗短路额定的 IGBT 内置自举二极管和专用的 Vs 引脚以简化印刷电路板布局内置负温度系数热敏电阻可实现温度监测低端 IGBT 的独立发射极开路引脚用于三相电流感测单接地电源供电针对