智能功率模块 Intelligent Power Module SPE02M50T-A_C 产品规格书主要功能及额定参数 : 500V,2A( 脉冲峰值 ), Main Function and Parameter: 封装 Package 1.2A( 连续电流 ) 500V,2A(Peak),1.

Size: px

Start display at page:

Download "智能功率模块 Intelligent Power Module SPE02M50T-A_C 产品规格书主要功能及额定参数 : 500V,2A( 脉冲峰值 ), Main Function and Parameter: 封装 Package 1.2A( 连续电流 ) 500V,2A(Peak),1."

技家
5 years ago
Views:

主要功能及额定 : 500V,2A( 脉冲峰值 ), Main Function and : 封装 Package 1.2A( 连续电流 ) 500V,2A(Peak),1.

3V 和 5V 的 MCU; 内置防直通保护 ; 内置欠压保护 ; 内部集成温度检测输出 ; 绝缘耐压 :1500V; Features: Active-High interface, works with 3.

产品名称封装形式打印名称 SPE02M50T-A DIP23A-FP SPE02M50T-A SPE02M50T-C SOP23-FP SPE02M50T-C 订货信息 ORDER MESSAGE 订货型号印记封装无卤素包装 Order codes Marking Package Halogen Free Packaging

1 主要功能及额定 : 500V,2A( 脉冲峰值 ), Main Function and : 封装 Package 1.2A( 连续电流 ) 500V,2A(Peak),1.2A(Continuou 下臂 MOSFET 源极开 s) 路输出 Low-Side MOSFET open-source output 应用 : Application: 风扇 Air Fan 电动工具 Electric Power Tools SOP23-FP 特点 : 信号高电平有效, 兼容 3.3V 和 5V 的 MCU; 内置防直通保护 ; 内置欠压保护 ; 内部集成温度检测输出 ; 绝缘耐压 :1500V; Features: Active-High interface, works with 3.3V/5V MCU Built-In protection of Shoot through; HVIC for Under-voltage Protection; HVIC Temperature-Sensing Built-In for temperature Monitoring; Isolation Rating:1500V; DIP23A-FP 产品名称封装形式打印名称 SPE02M50T-A DIP23A-FP SPE02M50T-A SPE02M50T-C SOP23-FP SPE02M50T-C 订货信息 ORDER MESSAGE 订货型号印记封装无卤素包装 Order codes Marking Package Halogen Free Packaging SPE02M50T-A SPE02M50T-A DIP23A-FP 否 NO 条管 Tube SPE02M50T-C SPE02M50T-C SOP23-FP 否 NO 条管 Tube 器件重量 Device Weight 模块内部电路图 Internal Block Diagram (1) (U)(2) P(17) (U)(3) IN(UH)(4) IN(UL)(5) U(18) NC(6) NU(19) (V)(7) (V)(8) NV(20) IN(VH)(9) IN(VL)(10) V(21) VTS(11) VTS (W)(12) (W)(13) NW(22) IN(WH)(14) IN(WL)(15) W(23) NC(16) 图 1: 模块内部电路图 Fig 1 Internal Block Diagram 版本 (Rev.):201801A 1/12

2 管脚说明 Pin Configuration 管脚编号管脚名称管脚描述图 2: 管脚图 Fig 2 Pin Configuration Pin Number Pin Name Pin Description 1 控制电源 GND 端子 IC Common Supply Ground 2 (U) U 相上臂驱动电源端子 Bias Voltage for U-Phase High-Side MOSFET Driving 3 (U) U 控制电源端子 Bias Voltage for U-Phase IC and Low-Side MOSFET Driving 4 IN(UH) U 相上臂控制信号输入端子 Signal Input for U-Phase High-Side 5 IN(UL) U 相下臂控制信号输入端子 Signal Input for U-Phase Low-Side 6 NC 无连接 No Connection 7 (V) V 相上臂驱动电源端子 Bias Voltage for V-Phase High Side MOSFET Driving 8 (V) V 控制电源端子 Bias Voltage for V-Phase IC and Low Side MOSFET Driving 9 IN(VH) V 相上臂控制信号输入端子 Signal Input for V-Phase High-Side 10 IN(VL) V 相下臂控制信号输入端子 Signal Input for V-Phase Low-Side 11 VTS HVIC 温度输出 Output for HVIC Temperature Sensing 12 (W) W 相上臂驱动电源端子 Bias Voltage for W-Phase High-Side MOSFET Driving 13 (W) W 控制电源端子 Bias Voltage for W-Phase IC and Low-Side MOSFET Driving 14 IN(WH) W 相上臂控制信号输入端子 Signal Input for W-Phase High-Side 15 IN(WL) W 相下臂控制信号输入端子 Signal Input for W-Phase Low-Side 16 NC 无连接 No Connection 17 P 逆变器直流输入端子 Positive DC-Link Input 18 U U 相输出端子 Output for U-Phase & Bias Voltage Ground for High-Side MOSFET Driving 19 NU U 相下臂 MOSFET 源极端子 Negative DC-Link Input for U-Phase 20 NV V 相下臂 MOSFET 源极端子 Negative DC-Link Input for V-Phase 21 V V 相输出端子 Output for V-Phase & Bias Voltage Ground for High-Side MOSFET Driving 22 NW W 相下臂 MOSFET 源极端子 Negative DC-Link Input for W-Phase 23 W W 相输出端子 Output for W Phase & Bias Voltage Ground for High-Side MOSFET Driving 版本 (Rev.):201801A 2/12

3 最大额定值 (Tj= 25 C, 除非特殊说明 ) Absolute Maximum Ratings (Tj= 25 C, Unless Otherwise Specified) 逆变部分 Inverter Part 额定值 Ratings Units V DSS 漏 - 源电压 Drain-Source Voltage of Each MOSFET 500 V I D 漏极连续电流 Each MOSFET Current, Continuous Tc = 25 C(Tc 测量参考图 5) Tc = 25 C(Tc refer to Fig:5) 1.2 A I DM 漏极电流 ( 峰值 )Each MOSFET Pulse Current, Peak Tc = 25 C, 脉冲宽度小于 100us Tc = 25 C, less than 100us 2 A I Drms 漏极电流 ( 有效值 )Each MOSFET Current, Rms Tc = 25 C, F PWM <20KHz 0.85 Arms P D 最大功耗 Maximum Power Dissipation Tc = 25 C, 每个 MOSFET Tc = 25 C,For Each MOSFET 14.2 W 控制部分 Control Part 额定值 Ratings Units V CC 控制电源电压 Control Supply Voltage V CC- 之间 Applied between V CC and 20 V V BS 高侧控制电压 High-side Bias Voltage - 之间 Applied between and 20 V V IN 输入信号电压 Input Signal Voltage V IN- 之间 Applied between V IN and -0.3~V CC+0.3 V 内部自举电路 Bootstrap Diode Part V RRMB I FB 反向耐压 Control Supply Voltage 正向电流 High-side Bias Voltage I FPB 正向电流 ( 峰值 ) Input Signal Voltage Tc = 25 C Tc = 25 C, 脉冲宽度小于 1Ms Tc = 25 C,Less than 1mS 额定值 Ratings Units 500 V 1 A 2.5 A 整个系统 Total System 版本 (Rev.):201801A 3/12

4 额定值 Ratings Units Tj 结温 Operating Junction Temperature -40~150 T STG 贮存温度 Storage Temperature Tc = 25 C -40~125 60Hz, 正弦, AC 1 分钟, 连接管脚到散 V ISO 绝缘耐压 Isolation Voltage 热器 60Hz, Sinusoidal, AC 1 min, between 1500 V pins and heat-sink plate 备注 1: 为了确保 IPM 正常工作, 模块的结温应该小于 150 (@Tc 100 C) NOTE1:To insure safe operation of the IPM, the average junction temperature should be limited to TJ 150 C (@Tc 100 C). 热阻 Thermal Resistance Rth(j-c) 结到外壳的热阻 Junction to Case Thermal resistance 额定值 Ratings Units 每个 MOSFET For Each MOSFET 8.8 C/W 电气特性 (Tj= 25 C, 除非特殊说明 ) Electrical Characteristics (TJ= 25 C, Unless Otherwise Specified) 逆变部分 Inverter Part 最小值典型值最大值 Min. Typ. Max. Unit BV DSS 漏 - 源击穿电压 Drain Source Breakdown Voltage V IN = 0 V, I D = 1 ma ( 备注 2) (Note2) V I DSS V SD R DS(on) t ON 零栅极电压漏极电流 Zero Gate Voltage Drain Current V IN = 0 V, V DS = 500 V ma 源 - 漏二极管正向电压 Drain - V CC = V BS = 15V, V IN = 0 V, I D Source Diode =-0.5 A Forward Voltage V 漏 - 源导通电 Drain-Source V CC = V BS = 15 V, V IN = 5 V, I D Turn-On Resistance =0.5 A ohm 开关时间 V PN = 300 V, V CC = V BS = 15 V, I D ns t OFF Switching Times = 0.5 A ns 版本 (Rev.):201801A 4/12

5 t rr V IN = 0/5 V, 感性负载 L(Inductive ns E ON Load) = 3 mh uj E OFF ( 备注 3)(Note3) uj R BSOA 反向偏置安全工作区 V PN = 400 V, V CC = V BS = 15 V, I D Reverse Bias Safe 全直角 Full Square = I DP, V DS = BV DSS,T = 150 C Operating Area 备注 2:BV DSS 是单个 MOSFET 漏源最大电压 V PN 应小于该值, 考虑到杂散电感,V DS 在任何情况下都不应超过 BV DSS NOTE 2:BV DSS is the absolute maximum voltage rating between drain and source terminal of each FRFET inside SPM. VPN should be sufficiently less than this value considering the effect of the stray inductance so that VDS should not exceed BV DSS in any case. 备注 3: t ON 和 t OFF 包含驱动 IC 传输延迟列表值是在实验下测得, 不同的 PCB 及连线会改变数值请参考图 3 的开关时间定义 NOTE 3: t ON and t OFF include the propagation delay time of the internal drive IC. Listed values are measured at the laboratory test condition, and they can be different according to the field applcations due to the effect of different printed circuit boards and wirings. Please see Fig 3 for the switching time definition. 控制部分 Control Part I QCC I QB UV CCD UV CCR UV BSD UV BSR V TS V IH V CC 静态电流 Quiescent Supply Current V BS 静态电流 Quiescent S Supply Current 低侧欠压保护 Low-Side Under-Voltage Protection 高侧欠压保护 High-Side Under-Voltage Protection HVIC 温度检测输出 HVIC Temperature Sensing Voltage Output 输入开启阈值电压 ON Threshold Voltage 最小值 Min. 典型值 Typ. 最大值 Max. Unit V CC 之间 V CC = 15V Applied between V IN = 5V and ua (U) U,(V) V,(W) W 之间 V DB = 15V Applied between V IN = 5V (U) -U,(V) - V, ua (W) -W 检测电平 Under-Voltage Protection Detection Level V 复位电平 Under-Voltage Protection Reset Level V 检测电平 S Under-Voltage Protection Detection Level V 复位电平 S Under-Voltage Protection Reset Level V V CC = 15 V, T HVIC = 25 C( 图 4 Figure4) V 逻辑高电平, 加在 V IN 与之间 Logic HIGH Level, Applied between VIN V and 版本 (Rev.):201801A 5/12

6 V IL V F(BSD) t rr(bsd) 输入关闭阈值电压 OFF Threshold Voltage 自举二极管导通压降 BSD Forward voltage 自举二极管反向恢复时间 Reverse Recovery Time 逻辑低电平, 加在 V IN 与之间 Logic Low Level, Applied between VIN and V I F = 0.1 A, TC = 25 C V I F = 0.1 A, TC = 25 C ns 推荐工作 Recommended Operating s V PN V CC V BS V IN(ON) V IN(OFF) t dead F PWM 电源电压 Supply Voltage 控制电源电压 Control Supply Voltage 高侧控制电源电压 High-Side Bias Voltage 输入开启阈值电压 Input ON Threshold Voltage 输入关闭阈值电压 Input OFF Threshold Voltage 死区时间 Blanking Time for Preventing Arm-Shor PWM 开关频率 PWM Switching Frequency 最小值 Min. 典型值 Typ. 最大值 Max. Unit P-N 之间 Applied between P and N V V CC- 之间 Applied between and V - 之间 Applied between and V V CC V V IN- 之间 Applied between VIN and V V CC = V BS = 13.5 ~ 16.5 V, Tj <150 C us Tj <150 C KHz 版本 (Rev.):201801A 6/12

7 100%Ic 100%Ic trr VCE Ic Ic VCE VIN VIN ton tc(on) VIN(ON) 10%Ic 90%Ic 10% VCE toff tc(off) 10%VCE 10%Ic (a) 开启 (b) 关断图 3: 开关时间定义 Fig 3: Switching Time Definition 3.5 温度检测电压 VTS(V)Output Voltage of VTS(V) Typ Min Max HVIC 温度 THVIC( C) HVIC Temp THVIC 图 4:HVIC 温度检测输出温度电压曲线 Fig 4:Curves of HVIC Temperature detection voltage curve 版本 (Rev.):201801A 7/12

8 图 5: 壳温 Tc 测试点 Fig 5:Case Temperature Measurement 保护功能时序图 Time Charts of Protective Function 图 6: 欠压保护时序图 ( 低侧 ) 版本 (Rev.):201801A 8/12

9 图 7: 欠压保护时序图 ( 高侧 ) 应用电路 Application Circuit MCU 10uF 15V R5 C2 C5 C4 VTS 图 8:MCU 接口和自举推荐电路 Recommended CPU Interface and Bootstrap Circuit with C1 s P U/V/W N R3 VDC C3 0 0 逆变器输出 Output 高阻 High Resistance VDC 1 1 开路 Open 开路 Open 禁止 Forbidden 高阻 High Resistance 备注 Note 上下桥 MOS 关闭 Both MOSFET Off 下桥 MOS 开通 Low side MOSFET On 上桥 MOS 开通 High side MOSFET On 直通 Shoot through 上下桥 MOS 关闭 Both MOSFET Off 备注 4: 自举电路的元器件要根据 PWM 周期而定, 以 15kHz 开关频率为例 :C1=C2=4.7uF NOTE 4:s for bootsrap circuit elements are dependent on PWM algorithm. For 15 khz of switching frequency, typical example of parameters is an example of:c1=c2=4.7uf 备注 5: 在模块的每个输入端和 MCU 输出端之间加入 RC 去耦电路, 如 R5 C5 和高频滤波电容, 如 :C4, 防止干扰噪声引起的信号失真 NOTE 5:RC coupling(r5 and C5) and C4 at each input of SPM and MCU may be used to prevent improper signal due to surge noise. Signal input of SPM is compatible with standard CMOS or LSTTL outputs. 版本 (Rev.):201801A 9/12

10 C1 +15V C4 (U) P P R5 (U) IN(UH) IN(UL) U CDC VDC C5 C2 NC NU (V) MCU R5 C5 C2 (V) IN(VH) IN(VL) VTS VTS NV V M (W) R5 (W) IN(WH) IN(WL) NW W C5 C2 NC 图 9: 典型应用电路图 C B R4 C3 R3 A Fig 9:Example of Application Circuit N1 备注 6: 输入驱动高有效 ;IC 内部集成有一个 500K ( 典型值 ) 下拉电阻 ; 为防止发生误动作, 输入布线应尽可能短 ; 当用 RC 去耦线路时, 须确保输入信号达到开启和关断阙值电压范围 NOTE 6:,Input drive is High-Active type. There is a 500kΩ(typ.) pull-down resistor integrated in the IC input circuit. To prevent malfunction, the wiring of each input should be as short as possible. When using RC coupling circuit, make sure the input signal level meet the turn-on and turn-off threshold voltage. 备注 7: 由于 R3 位于 MOSFET 源极与之间,R3 的压降会影响到下侧 MOSFET 的开关特性以及自举电路的特性, 因此 R3 的稳态压降应小于 1V NOTE 7:The voltage drop across R3 affects the low side switching performance and the bootstrap characteristics since it is placed between and the source terminal of the low side MOSFET. For this reason, the voltage drop across R3 should be less than 1V in the steady-state. 备注 8: 由于模块内置了专用 HVIC, 其控制端子可与 CPU 端子直接相连, 而不需要任何光耦或变压器等隔离电路 NOTE 8:Thanks for HVIC inside modules, direct coupling to MCU without any opto-coupler or transformer isolation is possible. 备注 9: 自举电路负极应直接连接到 U V W 的端 NOTE 9:Bootstrap negative electrodes should be connected to U,V,W terminals directly and separated from the main output wires. 备注 10: 为防止误保护, A B C 连线应尽可能短 NOTE 10:To prevent erroneous protection, the wiring of A, B, C should be as short as possible. 版本 (Rev.):201801A 10/12

11 备注 11: 保护线路 R4 C3 的时间常数建议选取在 1~2uS 关断时间可能随着布线的不同而多少有些变化建议 R4 C3 选择小容差, 温度补偿类型 NOTE 11:The time constant R4 C3 of the protection circuit should be selected in the range of 1.0-2μs. SC interrupting time might vary with the wiring pattern. Tight tolerance, temp-compensated type is recommended for R4, C3. 备注 12: 所有电容的位置尽可能的靠近 IPM NOTE 12:All capacitors should be mounted as close to the terminals of the IPM as possible. 备注 13: 为了防止噪声干扰, 储能电容与 P&N1 之间的引线应尽可能的短, 推荐在 P&N1 端子之间加约 0.1~0.22uF 的 MLCC 低频滤波电容 NOTE 13:To prevent surge destruction, the wiring between the smoothing capacitor and the P, N1 terminals should be as short as possible. Generally, a μF snubber between the P-N1 terminals is recommended. 备注 14:VTS 引脚是 IC 内部集成的温度检测输出脚, 如果不需要使用该引脚, 建议用 100K 电阻下拉至 GND, 不允许悬空 NOTE 14:The terminals of VTS is used to temperature detection, if you don t want to use it, please pull-down the terminal with a 100 KΩ resistor to GND. No connection is forbidden. 外形封装图 Detailed Package Outline Drawings SPE02M50T-A(DIP23-FP) :mm 图 10:SPE02M50T-A 封装外形图 Fig10:SPE02M50T-A Package Outline Drawings 版本 (Rev.):201801A 11/12

12 SPE02M50T-C(SOP23-FP) :mm 图 11:SPE02M50T-C 封装外形图 Fig 11:SPE02M50T-C Package Outline Drawings 版本 (Rev.):201801A 12/12

13 注意事项 1. 吉林华微电子股份有限公司的产品销售分为直销和销售代理, 无论哪种方式, 订货时请与公司核实 2. 购买时请认清公司商标, 如有疑问请与公司本部联系 3. 在电路设计时请不要超过器件的绝对最大额定值, 否则会影响整机的可靠性 4. 本说明书如有版本变更不另外告知联系方式吉林华微电子股份有限公司 NOTE 1. Jilin Sino-microelectronics co., Ltd sales its product either through direct sales or sales agent, thus, for customers, when ordering, please check with our company. 2. We strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don t be hesitate to contact us. 3. Please do not exceed the absolute maximum ratings of the device when circuit designing. 4. Jilin Sino-microelectronics co., Ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. CONTACT JI SINO-MICROELECTRONICS CO., LTD. 公司地址 : 吉林省吉林市深圳街 99 号邮编 : 总机 : 传真 : 网址 : ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: Tel: Fax: Web Site: 市场营销部地址 : 吉林省吉林市深圳街 99 号邮编 : 电话 : /3099 传真 : MARKET DEPARTMENT ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: Tel: /3099 Fax: 附录 (Appendix): 修订记录 (Revision History) 日期旧版本新版本 Date Last Rev. New Rev. 修订内容 Description of Changes A 初始版本版本 (Rev.):201801A 13/12

华微斯帕克 SPE05M50T-A/C 说明书 Control Part 智能功率模块 (IPM), 500V/5A 3 相全桥驱动主要功能及额定参数 : 500V,5A( 脉冲峰值 )2.4A( 连续电流 ) 下臂 MOSFET 源极输出内置自举二极管 DIP23-FP SOP23-FP 特点

华微斯帕克 SPE05M50T-A/C 说明书 Control Part 智能功率模块 (IPM), 500V/5A 3 相全桥驱动主要功能及额定参数 : 500V,5A( 脉冲峰值 )2.4A( 连续电流 ) 下臂 MOSFET 源极输出内置自举二极管 DIP23-FP SOP23-FP 特点华微斯帕克 Control Part 智能功率模块 (IPM), 500V/5A 3 相全桥驱动主要功能及额定参数 : 500V,5A( 脉冲峰值 )2.4A( 连续电流 ) 下臂 MOSFET 源极输出内置自举二极管 DIP23FP SOP23FP 特点 : 信号高电平有效, 兼容 3.3V 和 5V 的 MCU; 内置防直通保护 ; 内置欠压保护 ; 内部集成温度检测输出 ; 绝缘耐压 :1500V;

智能功率模块 Intelligent Power Module SPE02M50T-A_C 产品规格书 主要功能及额定参数 : 500V,2A( 脉冲峰值 ), Main Function and Parameter: 封装 Package 1.2A( 连续电流 ) 500V,2A(Peak),1.

智能功率模块 Intelligent Power Module SPE02M50T-A_C 产品规格书主要功能及额定参数 : 500V,2A( 脉冲峰值 ), Main Function and Parameter: 封装 Package 1.2A( 连续电流 ) 500V,2A(Peak),1.