FGH40T65SPD 650 V、40 A 场截止沟道 IGBT

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C FGHT65SPD 65 V A 场截止沟道 IGBT G 绝对最大额定值集电极 (FLANGE) E 符号说明 FGHT65SPD-F55 单位 V CES 集电极 - 发射极之间电压 65 V V GES 栅极 - 发射极间电压 2 V 瞬态栅极 - 发射极间电压 3 V I C 集电极电流 @ T C = 25 C 8 A 集电极电流 @ T C = C A I CM

1 FGHT65SPD 65 V A 场截止沟道 IGBT 特性最大结温 :T J =75 C 正温度系数, 易于并联运行高电流能力低饱和电压 :V CE(sat) =.85 V ( 典型值 I C = A 高输入阻抗快速开关紧密的参数分布符合 RoHS 标准短路耐用性 > 5 25 C E C G 概述飞兆半导体的场截止第 3 代 IGBT 新系列采用新型场截止 IGBT 技术, 为光伏逆变器 UPS 焊机电信 ESS 和 PFC 等低导通和开关损耗至关重要的应用提供最佳性能应用光伏逆变器 UPS 焊机 PFC 电信 ESS C FGHT65SPD 65 V A 场截止沟道 IGBT G 绝对最大额定值集电极 (FLANGE) E 符号说明 FGHT65SPD-F55 单位 V CES 集电极 - 发射极之间电压 65 V V GES 栅极 - 发射极间电压 2 V 瞬态栅极 - 发射极间电压 3 V I C T C = 25 C 8 A T C = C A I CM 集电极脉冲电流 2 A I F T C = 25 C A T C = C 2 A I FM 二极管最大正向脉冲电流 2 A P D T C = 25 C 267 W T C = C 3 W SCWT T C = 25 C 5 s T J 工作结温 -55 至 +75 C T stg 存储温度范围 -55 至 +75 C T L 用于焊接的最大引脚温度, 距离外壳 /8", 持续 5 秒 3 C 注意 : : 重复额定值 : 脉宽受最大结温限制热性能符号参数典型值最大值单位 R JC (IGBT) 结点 - 壳体的热阻 -.56 C/W R JC ( 二极管 ) 结点 - 壳体的热阻 -.7 C/W R JA 结至环境热阻 - C/W 23 飞兆半导体公司 December-27, 修订版 3 Publication Order Number: FGHT65SPDCN/D

2 封装标识与定购信息器件标识器件封装卷尺寸带宽每卷管数量 FGHT65SPD FGHT65SPD-F55 TO-27 G ea IGBT 的电气特性 T C = 25 C 除非另有说明符号参数测试条件最小值典型值最大值单位关断特性 BV CES 集电极 - 发射极击穿电压 V GE = V, I C = ma V DBV CES 击穿温度系数电压 DT J V GE = V, I C = ma V/ C I CES 集电极切断电流 V CE = V CES, V GE = V μa I GES G-E 漏电流 V GE = V GES, V CE = V - - ± na 导通特性 V GE(th) G-E 阈值电压 I C = ma, V CE = V GE V I C = A, V GE = 5 V V V CE(sat) 集电极 - 发射极间饱和电压 I C = A, V GE = 5 V, T C = 75 C V FGHT65SPD 65 V A 场截止沟道 IGBT 动态特性 C ies 输入电容 pf C oes 输出电容 V CE = 3 V, V GE = V, f = MHz pf C res 反向传输电容 pf 开关特性 T d(on) 导通延迟时间 ns T r 上升时间 ns T d(off) 关断延迟时间 V CC = V, I C = A, ns T f 下降时间 R G = 6, V GE = 5 V, - - ns E on 导通开关损耗感性负载, T C = 25 C mj E off 关断开关损耗 mj E ts 总开关损耗 -. - mj T d(on) 导通延迟时间 - - ns T r 上升时间 ns T d(off) 关断延迟时间 V CC = V, I C = A, ns T f 下降时间 R G = 6, V GE = 5 V, ns E on 导通开关损耗感性负载, T C =75 C mj E off 关断开关损耗 mj E ts 总开关损耗 mj T SC 短路耐受时间 V CC = V, V GE = 5 V, R G = μs 2

3 IGBT 电气特性 ( 接上页 ) 符号参数测试条件最小值典型值最大值单位 Q g 总栅极电荷 nc Q ge 栅极 - 发射极间电荷 V CE = V, I C = A, V GE = 5 V - - nc Q gc 栅极 - 发射极间电荷 nc 二极管电气特性 T C = 25 C 除非另有说明符号参数测试条件最小值典型值最大值单位 V FM 二极管正向电压 I F = 2 A T C = 25 C V T C = 75 C E rec 反向恢复电能 T C = 75 C μj T rr 二极管反向恢复时间 I F = 2 A, di F /dt=2 A/μs T C = 25 C T C = 75 C ns Q rr 二极管反向恢复电荷 T C = 25 C nc T C = 75 C FGHT65SPD 65 V A 场截止沟道 IGBT 3

4 典型性能特征图. 典型输出特性 Collector Current, IC [A] V 5V 2V V V GE = 8V 图 2. 典型输出特性图 3. 典型饱和电压特性图. 饱和电压与壳温的关系 ( 可变电流强度下 ) Collector Current, IC [A] V GE = 5V Collector Current, IC [A] 2 Collector-Emitter Voltage, VCE [V] V GE = 5V 2V 8A A 5V 2V V V GE = 8V I C = 2A Case Temperature, T C [ o C] FGHT65SPD 65 V A 场截止沟道 IGBT 图 5. 饱和电压与 V GE 的关系图 6. 饱和电压与 V GE 的关系 Collector-Emitter Voltage, VCE [V] I C = 2A 8A A Collector-Emitter Voltage, VCE [V] I C = 2A A 8A Gate-Emitter Voltage, V GE [V] Gate-Emitter Voltage, V GE [V]

5 典型性能特征图 7. 电容特性 Capacitance [pf] 图 9. 导通特性与栅极电阻的关系 Switching Time [ns] 2 V GE = V, f = MHz t r t d(on) C ies C oes C res V CC = V, V GE = 5V I C = A Gate Resistance, R G [ ] 3 图 8. 栅极电荷特性 Gate-Emitter Voltage, VGE [V] V CC = 2V 2 3 Gate Charge, Q g [nc] 图. 关断特性与栅极电阻的关系 Switching Time [ns] V CC = V, V GE = 5V I C = A t d(off) V 3V Gate Resistance, R G [ ] t f FGHT65SPD 65 V A 场截止沟道 IGBT 图. 开关损耗与栅极电阻的关系 Switching Loss [mj] 2 V CC = V, V GE = 5V I C = A E on E off 图 2. 导通特性与集电极电流的关系 Switching Time [ns] 2 V GE = 5V, R G = 6 T C = 75 o C t r t d(on) Gate Resistance, R G [ ] Collector Current, I C [A] 5

6 典型性能特征图 3. 关断特性与集电极电流的关系 Switching Time [ns] V GE = 5V, R G = 图 5. 负载电流与频率的关系 Collector Current, [A] Square Wave T C = o C t f t d(off) Collector Current, I C [A] V CC = V load current: peak of square wave T C = o C Power Dissipation = 3W k k k M Switching Frequency, f[hz] 图. 开关损耗与集电极电流的关系 Switching Loss [mj] 图 6. SOA 特性 Collector Current, Ic [A] 3 V GE = 5V, R G = 6 *Notes:. Collector Current, I C [A] E on E off s ms ms DC s 2. T J = 75 o C 3. Single Pulse. FGHT65SPD 65 V A 场截止沟道 IGBT 图 7. 正向特性图 8. 反向恢复电流 Forward Current, IF [A] 2 T J = 75 o C T J = 25 o C T J = 75 o C T C = 75 o C Forward Voltage, V F [V] Reverse Recovery Currnet, Irr [A] di F /dt = 2A/ s di F /dt = A/ s di F /dt = 2A/ s di F /dt = A/ s 2 3 Forward Current, I F [A] 6

7 典型性能特征图 9. 反向恢复时间 Reverse Recovery Time, trr [ns] di F /dt = A/ s di F /dt = 2A/ s 2 3 Forward Current, I F [A] 图 2. 存储电荷 Stored Recovery Charge, Qrr [nc] 图 2. IGBT 瞬态热阻抗 di F /dt = 2A/ s di F/dt = A/ s 2 3 Forward Current, I F [A] FGHT65SPD 65 V A 场截止沟道 IGBT Thermal Response [Zthjc] single pulse Duty Factor, D = t/t2 Peak T j = Pdm x Zthjc + T C E Rectangular Pulse Duration [sec] P DM t t 2 图 22. 二极管瞬态热阻抗 5 Thermal Response [Zthjc] single pulse Duty Factor, D = t/t2 Peak T j = Pdm x Zthjc + T C E Rectangular Pulse Duration [sec] P DM t t 2 7

8 机械尺寸 FGHT65SPD 65 V A 场截止沟道 IGBT 图 23. TO-27 3L - TO-27, 模塑封装, 3 引脚, JEDEC AB 长引脚封装图纸作为一项服务, 提供给考虑飞兆半导体元件的客户具体参数可能会有变化, 且不会做出相应通知请注意图纸上的版本和 / 或日期, 并联系飞兆半导体代表核实或获得最新版本封装规格并不扩大飞兆公司全球范围内的条款与条件, 尤其是其中涉及飞兆公司产品保修的部分 8

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T stg -40 to 125 C V cc 3.8V V dc RH 0 to 100 %RH T a -40 to +125 C -0.3 to 3.6V V -0.3 to VDD+0.3 V -10 to +10 ma = 25 = 3V) VDD

1/16 T stg -40 to 125 C V cc 3.8V V dc RH 0 to 100 %RH T a -40 to +125 C -0.3 to 3.6V V -0.3 to VDD+0.3 V -10 to +10 ma (@T = 25 C, @Vdd = 3V) VDD 1.8 3.0 3.6 V (1) 0.08 0.3 µa Idd 300 450 500 µa 0.25