MEMRISYS 2018: 3-5 July 2018, Beijing, China Poster Program Poster Sessions Program 12:00~13:30, July Memory and device P1.01 P1.02 P1.03 P1.

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1 Poster Sessions Program 12:00~13:30, July Memory and device P1.01 P1.02 P1.03 P1.04 P1.05 Flexibility and retention analysis of fully inkjet-printed resistive memory Bernhard Huber, Jakob Schober, Michael Kaiser, Andrea Kreuzer, Andreas Ruediger, Christina Schindler HfO2 1R selector in nanoscale RRAM array using asymmetric-structure-induced self rectifying Ran Jiang, Xinlei Zhang, and Hao Ji Dopant-Mediated Extrinsic Tunability of Oxygen Vacancy Formation in Switching Oxides for Application in Non-Volatile Memory Devices Handan Yildirim, Ruth Pachter Low temperature processed flexible RRAM based on AlOx single layer Weijie Duan, Chang Rao, Xihua Fan, Yanli Pei Electrical characteristics and Transport Mechanisms of Oxides Based Memristive Devices X. Lian, F. Miao, J. Suñé, F. Gao, X. Wan, Y. Guo and Y. Tong A robust low threshold voltage, large self-rectifying and forming free homogeneous bilayer hafnium oxide selector based on activated P1.06 electrode Ag J. Yin, F. Zeng, Q. Wan, Y. D. Hu, J. L. Liu, Y. M. Sun, F. Pan

2 P1.07 P1.08 P1.09 P1.10 P1.11 P1.12 P1.13 P1.14 Multistate Data Storage in Solution Processed NiO Resistive Switching Memory Jinxing Chu, Ya Li, Xihua Fan, Yanli Pei UV-Switchable Transition Metal Oxide Optoelectronic Memory Feichi Zhou, Yang Chai HfO2 self rectifying based on asymmetric-structure for 1R selector application Ran Jiang, Xinlei Zhang, and Hao Ji n+mos2/i-mos2/psi Heterojunction Memristive Solar Cell P. Ramalingam, K. Rathnakannan New insights on resistive switching in ZnO Nanowires Gianluca Milano, Ilia Valov, Carlo Ricciardi Physical-based Stochastic Modeling of ReRAM Devices Anne Siemon, Christopher Bengel, Camilla La Torre, Stephan Menzel Interface barriers at Metal TiO2 contacts Loukas Michalas, Ali Khiat, Spyros Stathopoulos, Themis Prodromakis Oxygen Vacancies Control Transition of Resistive Switching Mode in Single-Crystal TiO2 Memory Device Jun Ge, Shusheng Pa P1.15 3D SiNx-based resistive switching memory with high uniformity

3 Zhongyuan Ma P1.16 P1.17 P1.18 P1.19 P1.20 P1.21 P1.22 P1.23 Memristive filter circuit design with programmable bandwidth Aidana Irmanova, Kizheppatt Vipin, Alex Pappachen James Carbon-Based Memristive Materials and Devices Juqing Liu Investigating forming in TiO2-based memristors for 1S1R integration A. Khiat, S. Cortese, A. Serb, L. Michalas, S. Stathopoulos and T. Prodromakis Resistive Switching Behavior in CsPbI3 Perovskite-Based Memory Device Shuaipeng Ge, Yimin Cui Improvement of the threshold switching characteristics of NbOx-based devices by Engineering of the layer stack Melanie Herzig, Thomas Mikolajick, Stefan Slesazeck Resistive switching memory based on ZnO Jing Qi, Cong Hu, Bo Wang, Bosen Zhang, Yingtao Li, Qi Wang, Deyan He, Mario Olmedo, Jianlin Liu Resistive switching behaviors mediated by grain boundaries in one longitudinal Al/MoS2&PVP/ITO device Jing Qi, Na Bai, Min Xu, Cong Hu, Qi Wang, Yingtao Li, Deyan He Conduction mechanisms in Pt/TiO2/Pt memristors Loukas Michalas, Spyros Stathopoulos, Ali Khiat, Themis Prodromakis

4 P1.24 P1.25 P1.26 P1.27 P1.28 P1.29 P1.30 P1.31 Effect of Al2O3 thickness on the resistive switching properties of Al2O3/MgO nanostructures Catarina Dias, Hua Lv, Susana Cardoso, Paulo P. Freitas, João Ventura Ferroelectric/Mott insulator Memristors Ni Zhong, Ping-Hua Xiang, Bobo Tian, Chun-Gang Duan Solution-processable Biomaterial Memristor Ju Ruolin Switching Mechanism of TaOx/HfO2 Self-selective Cell in 3D VRRAM By Extracting the Traps with RTN Measurement Tiancheng Gong Low-Cost Upset Detector Circuit Design for Resilient Radiation Hardened Flip-Flop Chunhua Qi, Liyi Xiao, Tianqi Wang, Mingxue Huo, Guoliang Ma, Yanqing Zhang, Jiaqiang Li, Hongchen Li An Embedded Environmental Control Micro-Chamber System for RRAM Memristor Characterisation Tom Abbey, Alexander Serb, Nikos Vasilakis, Loukas Michalas, Ali Khiat, Spyros Stathopoulos, Themis Prodromakis The memristor switching behavior from the energetic point of view Bartlomiej Garda Bipolar resistive switching characteristics and mechanism of ZnO nano thin films based memristor device Xiaofeng Zhao, Li Yi P1.32 A Resistive-Switching Device with Self-Rectifying and Forming-Free Characteristics

5 Qing Luo P1.33 P1.34 P1.35 P1.36 P1.37 High performance non-volatile resistive random access memory based on CVD grown graphene oxide with a controllable oxidation T. Aziz1, L. Ma, S. Pei, B. Wang, Q. Liu, H. Cheng, and D. Sun Multistate storage nonvolatile memory device based on ferroelectricity and resistive switching effects of SrBi2Ta2O9 films Zhiwei Song, Minghua Tang Improving Performance by Doping Hafnium Into the Indium Tin Oxide Electrode in ZrO2-Based Resistive Random Access Memory Yonggao Hu, Lei Li, Kuan-Chang Chang The investigations of characteristics of GeSe thin films and devices for three-dimensional phase change memory Guangyu Liu, Liangcai Wu, Tao Li, Min Zhu, Jing Zhang, Zhitang Song The Impact of the electrode performance on operating parameters of phase change memory devices Yaotao Lu, Daolin Cai, Yifeng Chen, Shuai Yan, Lei Wu, Yuanguang Liu, Yang Li, Zhitang Song Neromorphic and Synapses P2.01 P2.02 Optoelectronic Memristor Based on ITO/Nb:SrTiO3 Heterojunction for Synaptic Emulation Applications Shuang Gao, Gang Liu, Run-Wei Li Reconfigurable parallel in-memory computing in memristive crossbar array Long Cheng, Yi Li, Yaxiong Zhou, Zhuorui Wang, Siyu Hu, Xiangshui Miao P2.03 Autonomous Agriculture Pesticides Spraying System using Digital Image Processing

6 S. Sundararajan P2.04 P2.05 P2.06 P2.07 P2.08 P2.09 P2.10 P2.11 Artificial neuron with leaky-integrate-and-fire functions based on memristors He-Ming Huang, Rui Yang, Xin Guo Impact of Line Resistance on the Crossbar Array Based Neuromorphic Computing Xi Zhu, Hui Xu, Zhiwei Li, Yinan Wang, Haijun Liu SnSe-based Memristor for Synaptic Plasticity Modulation and Learning Behavior Emulation Xinxin Chen, Chun Hung Suen, Hei-Man Yau, Feichi Zhou, Yang Chai, Xiaodan Tang, Xiaoyuan Zhou, Ji-Yan Dai An organic ferroelectric transistor as a regulable artificial synapse for neuromorphic computing Bobo Tian Realization of artificial cognitive memory based on different electrical properties of pure-gete films Yuli He, Guokun Ma, Chunlei liu, Hengmei Cai, Ao Chen, Qin Chen, Hao Wang Memristors of organic nanocrystal array with tunable switching dynamics to mimic synapse plasticity Fangxu Yang Modeling and Circuit Implementation of a Fractional-Order Memristor-Based Time-delay Chaoctic System Yecui Weng, Dawei Ding, Xin Qian, Xiaolei Yao, Hui Liu A Novel Neuristor and Optimization Design for Spiking Neural Network Xumeng Zhang, Jinsong Wei, Jian Lu, Rui Wang, Qing Luo, Tuo Shi, Hangbing Lv, Shibing Long, Qi Liu, Ming Liu

7 P2.12 P2.13 P2.14 P2.15 P2.16 P2.17 P2.18 P2.19 A Cation-based Flexible Memristor with Synaptic Plasticity for Neuromorphic System Application Tian-Yu Wang, Zheng-Yu He, Lin Chen, Hao Zhu, Qing-Qing Sun, Peng Zhou, and David Wei Zhang Artificial Shape Perception Retina Network Lin Bao, Jian Kang, Yichen Fang, Zhizhen Yu, Zongwei Wang, Yuchao Yang, Yimao Cai, Ru Huang Multi-States and Low Power Synaptic Devices with Gate Controlled WS2 Memristors Hao Liu, Zhe-Hui Fan, Lin Chen, Hao Zhu, Qing-Qing Sun, Peng Zhou, and David Wei Zhang Early termination during training to deal with time-dependent variability in RRAM-based analog neural network Yimao Cai, Yichen Fang, Zongwei Wang, Kang Jian, Zhizhen Yu Optimized Linearity of Filamentary RRAM for Neuromorphic Hardware Wei Wu, Huaqiang Wu, Bin Gao and He Qian Simplified Neuromorphic Computing with Memristors Vasileios Ntinas, Iosif-Angelos Fyrigos, Georgios Sirakoulis, Ioannis Karafyllidis, Panagiotis Dimitrakis, Andrew Adamatzky, Antonio Rubio Stoichiometry of PLD-grown and magnetron-sputtered memristive BiFeO3 thin films Danilo Bürger, Venkata Rao Rayapati, Jörn Bankwitz, Ilona Skorupa, Nan Du, Ramona Ecke, Stefan Schulz, Heidemarie Schmidt Simulation of synaptic function based on organic semiconductor memristor Lutao Liu P2.20 Pattern Recognition Through Unsupervised Learning by Lithium Silicate Synapses

8 Bowei Chen, Shijie Li, Hui Yang, YuHui He, Xiangshui Miao P2.21 P2.22 P2.23 P2.24 P2.25 P2.26 P2.27 P2.28 Artificial neuron base on threshold switching memristor and Gasp Circuits Jinsong Wei, Xumeng Zhang, Jian Lu, Qi Liu, Ming Liu A neuron circuit with property of sensitization based on Mott memristor Hang Zhao, Wei Wang, Bing Song, Qingjiang Li, Jietao Diao Ultra-sensitive memristive synapses based on lightly oxidized sulfide films Lingxiang Hu, Fei Zhuge Current-Based LIF Neuron for Memristive Spiking Neural Network Jian Lu, Jinsong Wei, Xumeng Zhang, Qi Liu, Ming Liu Analog control unit for memristive crossbar memory arrays Moldir Assangali, Olga Krestinskaya, Alex Pappachen James Memristive HTM for solar cell classification an d performance prediction Aidana Irmanova, Olga Krestinskaya, Maxime Mussard, Alex Pappachen James Negative Differential Resistance Effect in Transition-Metal Dichalcogenides and Applications on Neuron Circuits Miao Wang, Cong Wang, Chen Pan, Chengyu Wang, Shi-Jun Liang, Feng Miao Analog-switching-RRAM based system for deep learning Peng Yao, Huaqiang Wu, Bin Gao, He Qian

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