62mmC-Series 模块 采用 CoolSiC TrenchMOSFET 62mmC-SeriesmodulewithCoolSiC TrenchMOSFET / VDSS = 12V ID nom = 375A / IDRM = 75A 潜在应用 PotentialApplications DC/DC 变换器 DC/DCconverter UPS 系统 UPSsystems 太阳能应用 Solarapplications 高频开关应用 HighFrequencySwitchingapplication 电气特性 ElectricalFeatures 低开关损耗 Lowswitchinglosses 高电流密度 Highcurrentdensity ModuleLabelCode BarcodeCode128 DMX-Code ContentoftheCode ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) Digit 1-5 6-11 12-19 2-21 22-23 Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2. www.infineon.com
MOSFET/MOSFET 最大额定值 /MaximumRatedValues 漏源极电压 Drain-sourcevoltage 直流漏极电流 DCdraincurrent 脉冲漏极电流 Pulseddraincurrent 栅源峰值电压 Gate-sourcevoltage VDSS 12 V Tvj = 175 C, VGS = 15 V TC = 8 C ID nom 375 A 经设计验证,tp 由 Tvjmax 限定 verifiedbydesign,tplimitedbytvjmax ID pulse 75 A VGSS -1 / 2 V 特征值 /CharacteristicValues min. typ. max. 漏源通态电阻 Drain-sourceonresistance ID = 375 A VGS = 15 V RDS on 2,83 3,92 4,33 栅极阈值电压 Gatethresholdvoltage 总的栅极电荷 Totalgatecharge 内部栅极电阻 Internalgateresistor 输入电容 Inputcapacitance 输出电容 Outputcapacitance 反向传输电容 Reversetransfercapacitance ID=168mA,VDS=VGS,Tvj=25 C (testedafter1mspulseatvgs=+2v) mω VGS(th) 3,45 4,5 5,15 V VGS = -5 V / 15 V, VDS = 8 V QG 1, µc RGint 1, Ω f = 1 MHz, VDS = 25 V, VGS = V f = 1 MHz, VDS = 25 V, VGS = V f = 1 MHz, VDS = 25 V, VGS = V COSSstoredenergy VDS = 25 V, VGS = -5 V / 15 V 零栅电压漏极电流 Zerogatevoltagedraincurrent 栅极漏电流 Gate-sourceleakagecurrent 开通延迟时间 ( 电感负载 ) Turnondelaytime,inductiveload 上升时间 ( 电感负载 ) Risetime,inductiveload 关断延迟时间 ( 电感负载 ) Turnoffdelaytime,inductiveload 下降时间 ( 电感负载 ) Falltime,inductiveload 开通损耗 ( 每脉冲 ) Turn-onenergylossperpulse 关断损耗 ( 每脉冲 ) Turn-offenergylossperpulse 结 - 外壳热阻 Thermalresistance,junctiontocase 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 在开关状态下温度 Temperatureunderswitchingconditions Ciss 29,8 nf Coss 1,65 nf Crss,227 nf Eoss 66 µj VDS = 12 V, VGS = -5 V IDSS 5,4 52 µa VDS = V ID = 375 A, VDS = 6 V VGS = -5 V / 15 V RGon = 4,3 Ω ID = 375 A, VDS = 6 V VGS = -5 V / 15 V RGon = 4,3 Ω ID = 375 A, VDS = 6 V VGS = -5 V / 15 V RGoff = 3,6 Ω ID = 375 A, VDS = 6 V VGS = -5 V / 15 V RGoff = 3,6 Ω ID = 375 A, VDS = 6 V, Lσ = 1 nh di/dt = 7,5 ka/µs () VGS = -5 V / 15 V, RGon = 4,3 Ω ID = 375 A, VDS = 6 V, Lσ = 1 nh du/dt = 7,67 kv/µs () VGS = -5 V / 15 V, RGoff = 3,6 Ω VGS = 2 V VGS = -1 V IGSS td on tr td off tf Eon Eoff 79,4 71,6 71,6 198 219 219 69,3 6,4 6,4 51,5 46,8 46,8 18,5 16, 16, 13, 13,5 13,5 每个 MOSFET/perMOSFET RthJC,113 K/W 每个 MOSFET/perMOSFET λpaste=1w/(m K)/λgrease=1W/(m K) 4 na ns ns ns ns mj mj RthCH,32 K/W Tvj op -4 15 C Bodydiode 最大额定值 /MaximumRatedValues DCbodydiodeforwardcurrent Tvj = 175 C, VGS = -5 V TC = 8 C ISD 12 A 特征值 /CharacteristicValues min. typ. max. 正向电压 ISD = 375 A, VGS = -5 V 4,6 5,65 Forwardvoltage ISD = 375 A, VGS = -5 V ISD = 375 A, VGS = -5 V VSD 4,35 4,3 V Datasheet 2 V2.
模块 /Module 绝缘测试电压 Isolationtestvoltage 模块基板材料 Materialofmodulebaseplate 内部绝缘 Internalisolation 爬电距离 Creepagedistance 电气间隙 Clearance 相对电痕指数 Comperativetrackingindex 相对温度指数 ( 电 ) RTIElec. 杂散电感, 模块 Strayinductancemodule 模块引线电阻, 端子 - 芯片 Moduleleadresistance,terminals-chip 储存温度 Storagetemperature 模块安装的安装扭距 Mountingtorqueformodulmounting 端子联接扭距 Terminalconnectiontorque 重量 Weight RMS, f = 5 Hz, t = 1 min. VISOL 4, kv 基本绝缘 (class1,iec6114) basicinsulation(class1,iec6114) 端子至散热器 /terminaltoheatsink 端子至端子 /terminaltoterminal 端子至散热器 /terminaltoheatsink 端子至端子 /terminaltoterminal 住房 housing Cu Al2O3 29, 23, 23, 11, CTI > 4 mm mm RTI 14 C min. typ. max. LsCE 2 nh TC=25 C, 每个开关 /perswitch RCC'+EE',475 mω 螺丝 M6 根据相应的应用手册进行安装 ScrewM6-Mountingaccordingtovalidapplicationnote 螺丝 M6 根据相应的应用手册进行安装 ScrewM6-Mountingaccordingtovalidapplicationnote Tstg -4 125 C M 3, 6, Nm M 2,5-5, Nm G 34 g Important note: The selection of positive and negative gate-source voltages impacts the long-term behavior of the device. The design guidelines described in Application Note AN 218-9 must be considered to ensure sound operation of the device over the planned lifetime. Datasheet 3 V2.
输出特性 MOSFET( 典型 ) outputcharacteristicmosfet(typical) ID=f(VDS) VGS=15V 输出特性 MOSFET( 典型 ) outputcharacteristicmosfet(typical) ID=f(VDS) Tvj=15 C 75 675 6 75 675 6 VGS = 19 V VGS = 17 V VGS = 15 V VGS = 13 V VGS = 11 V VGS = 9 V VGS = 7 V 525 525 45 45 375 375 3 3 225 225 15 15 75 75,,5 1, 1,5 2, 2,5 3, 3,5 4, VDS [V],,5 1, 1,5 2, 2,5 3, 3,5 4, 4,5 5, VDS [V] 传输特性 MOSFET( 典型 ) transfercharacteristicmosfet(typical) ID=f(VGS) VDS=2V 栅极电荷特性 MOSFET( 典型 ) gatechargecharacteristicmosfet(typical) VGS=f(QG) VDS=8V,ID=375A,Tvj=25 C 75 675 15 6 525 1 45 375 VGS [V] 5 3 225 15 75 2 3 4 5 6 7 8 9 1 11 VGS [V] -5 2 4 6 8 1 QG [nc] Datasheet 4 V2.
电容特性 MOSFET( 典型 ) capacitycharacteristicmosfet(typical) C=f(VDS) VGS=V,Tvj=25 C,f=1MHz 开关损耗 MOSFET( 典型 ) switchinglossesmosfet(typical) Eon=f(ID),Eoff=f(ID) VGS=-5V/+15V,RGon=4,3Ω,RGoff=3,6Ω,VDS=6V 1 Ciss Coss 35 Eon:, Eoff:, Crss 3 25 1 2 C [nf] E [mj] 15 1 1 5,1,1 1 1 1 1 VDS [V] 75 15 225 3 375 45 525 6 675 75 开关损耗 MOSFET( 典型 ) switchinglossesmosfet(typical) Eon=f(RG),Eoff=f(RG) VGS=-5V/+15V,ID=375A,VDS=6V 反偏安全工作区 MOSFET(RBSOA) reversebiassafeoperatingareamosfet(rbsoa) ID=f(VDS) VGS=-5V/+15V,RGoff=3,6Ω,VDS=6V,Tvj=15 C 18 16 14 Eon:, Eoff:, 825 75 675 6 ID: Modul ID: Chip 12 525 E [mj] 1 8 45 375 6 3 225 4 15 2 75 5 1 15 2 25 3 35 4 45 RG [Ω] 2 4 6 8 1 12 14 VDS [V] Datasheet 5 V2.
瞬态热阻抗 MOSFET transientthermalimpedancemosfet ZthJC=f(t) 1,1 ZthJC [K/W],1 i: ri[k/w]: τi[s]: 1,885,317 2,612,286 3,341,115 4,885 1,12,1,1,1,1 1 1 t [s] Datasheet 6 V2.
接线图 /Circuitdiagram 封装尺寸 /Packageoutlines Infineon Datasheet 7 V2.
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