J CES = 2 IC nom = 75 / ICRM = 5 典型应用 Typicalpplications 三电平应用 3-level-applications 太阳能应用 Solarapplications 电气特性 ElectricalFeatures 高速 IGBTH3 HighspeedIGBTH3 低电感设计 Lowinductivedesign 低开关损耗 Lowswitchinglosses 低 CEsat LowCEsat 机械特性 MechanicalFeatures 3k 交流 分钟 绝缘 3kCmininsulation 低热阻的三氧化二铝 (l2o3 衬底 l2o3substratewithlowthermalresistance 紧凑型设计 Compactdesign PressFIT 压接技术 PressFITcontacttechnology 集成的安装夹使安装坚固 Rugged mounting due to integrated mounting clamps ModuleLabelCode BarcodeCode28 DMX-Code ContentoftheCode ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) Digit -5 6-2-9 2-2 22-23 ULapproved(E83335)
IGBT,T-T4/IGBT,T-T4 最大额定值 /MaximumRatedalues 集电极 - 发射极电压 Collector-emittervoltage 集电极电流 Implementedcollectorcurrent 连续集电极直流电流 ContinuousDCcollectorcurrent 集电极重复峰值电流 Repetitivepeakcollectorcurrent 总功率损耗 Totalpowerdissipation 栅极 - 发射极峰值电压 Gate-emitterpeakvoltage CES 2 TC = C, Tvj max = 75 C TC = 25 C, Tvj max = 75 C ICN 75 IC nom tp = ms ICRM 5 TC = 25 C, Tvj max = 75 C Ptot 275 W IC 45 GES +/-2 特征值 /Characteristicalues min. typ. max. 集电极 - 发射极饱和电压 Collector-emittersaturationvoltage 栅极阈值电压 Gatethresholdvoltage 栅极电荷 Gatecharge 内部栅极电阻 Internalgateresistor 输入电容 Inputcapacitance 反向传输电容 Reversetransfercapacitance 集电极 - 发射极截止电流 Collector-emittercut-offcurrent 栅极 - 发射极漏电流 Gate-emitterleakagecurrent 开通延迟时间 ( 电感负载 ) Turn-ondelaytime,inductiveload 上升时间 ( 电感负载 ) Risetime,inductiveload 关断延迟时间 ( 电感负载 ) Turn-offdelaytime,inductiveload 下降时间 ( 电感负载 ) Falltime,inductiveload 开通损耗能量 ( 每脉冲 ) Turn-onenergylossperpulse 关断损耗能量 ( 每脉冲 ) Turn-offenergylossperpulse 短路数据 SCdata 结 - 外壳热阻 Thermalresistance,junctiontocase IC =, GE = 5 IC =, GE = 5 IC =, GE = 5 Tvj = 5 C CE sat,45,55,,7 IC = 2, m, CE = GE, GEth 5, 5,8 6,5 GE = -5... +5 QG,57 µc RGint, Ω f = MHz,, CE = 25, GE = Cies 4,4 nf f = MHz,, CE = 25, GE = Cres,235 nf CE = 2, GE =, ICES, m CE =, GE = 2, IGES n IC =, CE = 4 GE = 5 RGon = 6,8 Ω IC =, CE = 4 GE = 5 RGon = 6,8 Ω IC =, CE = 4 GE = 5 RGoff = 6,8 Ω IC =, CE = 4 GE = 5 RGoff = 6,8 Ω IC =, CE = 4, LS = 4 nh GE = 5, di/dt = 2 / (Tvj = 5 C) RGon = 6,8 Ω IC =, CE = 4, LS = 4 nh GE = 5, du/dt = 24 / (Tvj = 5 C) RGoff = 6,8 Ω GE 5, CC = 8 CEmax = CES -LsCE di/dt Tvj = 5 C Tvj = 5 C Tvj = 5 C Tvj = 5 C Tvj = 5 C Tvj = 5 C tp, Tvj = 5 C td on tr td off tf Eon Eoff ISC,3,3,3,,2,2,25,32,34,25,4,45,4,,7,5,,75 27 每个 IGBT/perIGBT RthJC,5,55 K/W 2
外壳 - 散热器热阻 Thermalresistance,casetoheatsink 在开关状态下温度 Temperatureunderswitchingconditions 每个 IGBT/perIGBT λpaste=w/(m K)/λgrease=W/(m K) RthCH,45 K/W Tvj op -4 5 C 二极管,D/D4/Diode,D/D4 最大额定值 /MaximumRatedalues 反向重复峰值电压 Repetitivepeakreversevoltage 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent I2t- 值 I²t-value RRM 2 IF tp = ms IFRM 5 R =, tp = ms, R =, tp = ms, Tvj = 5 C 特征值 /Characteristicalues min. typ. max. 正向电压 Forwardvoltage 反向恢复峰值电流 Peakreverserecoverycurrent 恢复电荷 Recoveredcharge 反向恢复损耗 ( 每脉冲 ) Reverserecoveryenergy 结 - 外壳热阻 Thermalresistance,junctiontocase 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 在开关状态下温度 Temperatureunderswitchingconditions IF =, GE = IF =, GE = IF =, GE = IF =, - dif/dt = 2 / (Tvj=5 C) R = 4 GE = -5 IF =, - dif/dt = 2 / (Tvj=5 C) R = 4 GE = -5 IF =, - dif/dt = 2 / (Tvj=5 C) R = 4 GE = -5 Tvj = 5 C Tvj = 5 C Tvj = 5 C Tvj = 5 C I²t F IRM Qr Erec 9, 75,,85,9,9 72, 8, 82, 2,35 2,85 3,7,8,,35 ²s ²s 2,4 每个二极管 /perdiode RthJC,95,5 K/W 每个二极管 /perdiode λpaste=w/(m K)/λgrease=W/(m K) µc µc µc RthCH,85 K/W Tvj op -4 5 C 3
IGBT,T2/T3/IGBT,T2/T3 最大额定值 /MaximumRatedalues 集电极 - 发射极电压 Collector-emittervoltage 连续集电极直流电流 ContinuousDCcollectorcurrent 集电极重复峰值电流 Repetitivepeakcollectorcurrent 总功率损耗 Totalpowerdissipation 栅极 - 发射极峰值电压 Gate-emitterpeakvoltage CES 65 TC = 8 C, Tvj max = 75 C TC = 25 C, Tvj max = 75 C IC nom tp = ms ICRM TC = 25 C, Tvj max = 75 C Ptot 5 W IC 45 GES +/-2 特征值 /Characteristicalues min. typ. max. 集电极 - 发射极饱和电压 Collector-emittersaturationvoltage 栅极阈值电压 Gatethresholdvoltage 栅极电荷 Gatecharge 内部栅极电阻 Internalgateresistor 输入电容 Inputcapacitance 反向传输电容 Reversetransfercapacitance 集电极 - 发射极截止电流 Collector-emittercut-offcurrent 栅极 - 发射极漏电流 Gate-emitterleakagecurrent 开通延迟时间 ( 电感负载 ) Turn-ondelaytime,inductiveload 上升时间 ( 电感负载 ) Risetime,inductiveload 关断延迟时间 ( 电感负载 ) Turn-offdelaytime,inductiveload 下降时间 ( 电感负载 ) Falltime,inductiveload 开通损耗能量 ( 每脉冲 ) Turn-onenergylossperpulse 关断损耗能量 ( 每脉冲 ) Turn-offenergylossperpulse 短路数据 SCdata 结 - 外壳热阻 Thermalresistance,junctiontocase 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 在开关状态下温度 Temperatureunderswitchingconditions IC =, GE = 5 IC =, GE = 5 IC =, GE = 5 Tvj = 5 C CE sat,55,7,8 2, IC =, m, CE = GE, GEth 4,9 5,8 6,5 GE = -5... +5 QG, µc RGint, Ω f = MHz,, CE = 25, GE = Cies,65 nf f = MHz,, CE = 25, GE = Cres,5 nf CE = 65, GE =, ICES, m CE =, GE = 2, IGES n IC =, CE = 4 GE = 5 RGon = Ω IC =, CE = 4 GE = 5 RGon = Ω IC =, CE = 4 GE = 5 RGoff = Ω IC =, CE = 4 GE = 5 RGoff = Ω IC =, CE = 4, LS = 4 nh GE = 5, di/dt = 2 / (Tvj = 5 C) RGon = Ω IC =, CE = 4, LS = 4 nh GE = 5, du/dt = 47 / (Tvj = 5 C) RGoff = Ω GE 5, CC = 3 CEmax = CES -LsCE di/dt Tvj = 5 C Tvj = 5 C Tvj = 5 C Tvj = 5 C Tvj = 5 C Tvj = 5 C tp 8, tp 6, Tvj = 5 C td on tr td off tf Eon Eoff ISC,22,25,25,,2,2,6,8,85,25,37,4,34,5,53,85,5,2 2 5 每个 IGBT/perIGBT RthJC,9, K/W 每个 IGBT/perIGBT λpaste=w/(m K)/λgrease=W/(m K) RthCH,85 K/W Tvj op -4 5 C 4
二极管,D2/D3/Diode,D2/D3 最大额定值 /MaximumRatedalues 反向重复峰值电压 Repetitivepeakreversevoltage 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent I2t- 值 I²t-value RRM 65 IF tp = ms IFRM R =, tp = ms, R =, tp = ms, Tvj = 5 C 特征值 /Characteristicalues min. typ. max. 正向电压 Forwardvoltage 反向恢复峰值电流 Peakreverserecoverycurrent 恢复电荷 Recoveredcharge 反向恢复损耗 ( 每脉冲 ) Reverserecoveryenergy 结 - 外壳热阻 Thermalresistance,junctiontocase 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 在开关状态下温度 Temperatureunderswitchingconditions IF =, GE = IF =, GE = IF =, GE = IF =, - dif/dt = 2 / (Tvj=5 C) R = 4 IF =, - dif/dt = 2 / (Tvj=5 C) R = 4 IF =, - dif/dt = 2 / (Tvj=5 C) R = 4 Tvj = 5 C Tvj = 5 C Tvj = 5 C Tvj = 5 C I²t F IRM Qr Erec 5,45,35, 42, 48, 5,,8 2,4 2,,45,65,73 ²s ²s,65 每个二极管 /perdiode RthJC,,2 K/W 每个二极管 /perdiode λpaste=w/(m K)/λgrease=W/(m K) µc µc µc RthCH,7 K/W Tvj op -4 5 C 负温度系数热敏电阻 /NTC-Thermistor 特征值 /Characteristicalues min. typ. max. 额定电阻值 Ratedresistance R 偏差 DeviationofR 耗散功率 Powerdissipation B- 值 B-value B- 值 B-value B- 值 B-value 根据应用手册标定 Specificationaccordingtothevalidapplicationnote. TNTC = 25 C R25 5, kω TNTC = C, R = 493 Ω R/R -5 5 % TNTC = 25 C P25 2, mw R2 = R25 exp [B25/5(/T2 - /(298,5 K))] B25/5 3375 K R2 = R25 exp [B25/8(/T2 - /(298,5 K))] B25/8 34 K R2 = R25 exp [B25/(/T2 - /(298,5 K))] B25/ 3433 K 5
模块 /Module 绝缘测试电压 Isolationtestvoltage 内部绝缘 Internalisolation 爬电距离 Creepagedistance 电气间隙 Clearance 相对电痕指数 Comperativetrackingindex 杂散电感, 模块 Strayinductancemodule 模块引线电阻, 端子 - 芯片 Moduleleadresistance,terminals-chip 储存温度 Storagetemperature npresskraft für mech. Bef. pro Feder mountig force per clamp 重量 Weight RMS, f = 5 Hz, t = min. ISOL 3, k 基本绝缘 (class,iec64) basicinsulation(class,iec64) 端子至散热器 /terminaltoheatsink 端子至端子 /terminaltoterminal 端子至散热器 /terminaltoheatsink 端子至端子 /terminaltoterminal TC=25 C, 每个开关 /perswitch I2O3,5 6,3, 5, CTI > 2 min. typ. max. mm mm LsCE nh RCC'+EE' R'+CC' 5, 6, mω Tstg -4 25 C F 4-8 N G 24 g Der Strom im Dauerbetrieb ist auf 25 effektiv pro nschlusspin begrenzt. The current under continuous operation is limited to 25 rms per connector pin. 6
输出特性 IGBT,T-T4( 典型 ) outputcharacteristicigbt,t-t4(typical) IC=f(CE) GE=5 输出特性 IGBT,T-T4( 典型 ) outputcharacteristicigbt,t-t4(typical) IC=f(CE) Tvj=5 C 5 Tvj = 5 C 5 GE = 9 GE = 7 GE = 5 GE = 3 GE = GE = 9 4 4 IC [] IC [] 2 2,,5,,5 2, 2,5 CE [],,5,,5 2, 2,5 3, CE [] 传输特性 IGBT,T-T4( 典型 ) transfercharacteristicigbt,t-t4(typical) IC=f(GE) CE=2 开关损耗 IGBT,T-T4( 典型 ) switchinglossesigbt,t-t4(typical) Eon=f(IC),Eoff=f(IC) GE=±5,RGon=6.8Ω,RGoff=6.8Ω,CE=4 5 Tvj = 5 C 3, 2,5 Eon, Eoff, Eon, Tvj = 5 C Eoff, Tvj = 5 C 4 2, IC [] E [],5 2,,5 5 6 7 8 9 GE [], 2 4 5 IC [] 7
开关损耗 IGBT,T-T4( 典型 ) switchinglossesigbt,t-t4(typical) Eon=f(RG),Eoff=f(RG) GE=±5,IC=,CE=4 瞬态热阻抗 IGBT,T-T4 transientthermalimpedanceigbt,t-t4 ZthJH=f(t) 4, Eon, Eoff, Eon, Tvj = 5 C Eoff, Tvj = 5 C ZthJH : IGBT 3, E [] 2, ZthJH [K/W], i: ri[k/w]: τi[s]:,32,5 2,62,5 3,32,5 4,543,2, 2 4 5 7 RG [Ω],,,, t [s] 反偏安全工作区 IGBT,T-T4(RBSO) reversebiassafeoperatingareaigbt,t-t4(rbso) IC=f(CE) GE=±5,RGoff=6.8Ω,Tvj=5 C 正向偏压特性 二极管,D/D4( 典型 ) forwardcharacteristicofdiode,d/d4(typical) IF=f(F) 7 IC, Modul IC, Chip 5 45 4 Tvj = 5 C 5 35 4 IC [] IF [] 25 2 2 5 5 2 4 8 2 4 CE [],,5,,5 2, 2,5 3, F [] 8
开关损耗 二极管,D/D4( 典型 ) switchinglossesdiode,d/d4(typical) Erec=f(IF) RGon=Ω,CE=4 开关损耗 二极管,D/D4( 典型 ) switchinglossesdiode,d/d4(typical) Erec=f(RG) IF=,CE=4 2,,8 Erec, Erec, Tvj = 5 C,6,4 Erec, Erec, Tvj = 5 C,6,4,2,2, E [], E [],8,8,6,6,4,4,2,2, 5 5 2 25 35 4 45 5 55 IF [], 2 4 5 7 8 9 RG [Ω] 瞬态热阻抗 二极管,D/D4 transientthermalimpedancediode,d/d4 ZthJH=f(t) 输出特性 IGBT,T2/T3( 典型 ) outputcharacteristicigbt,t2/t3(typical) IC=f(CE) GE=5 ZthJH: Diode 54 Tvj = 5 C 48 42 36 ZthJH [K/W] IC [] 24 8 i: ri[k/w]: τi[s]:,5,5 2,323,5 3,739,5 4,588,2 2 6,,,, t [s],,5,,5 2, 2,5 3, CE [] 9
输出特性 IGBT,T2/T3( 典型 ) outputcharacteristicigbt,t2/t3(typical) IC=f(CE) Tvj=5 C 传输特性 IGBT,T2/T3( 典型 ) transfercharacteristicigbt,t2/t3(typical) IC=f(GE) CE=2 54 48 GE = 9 GE = 7 GE = 5 GE = 3 GE = GE = 9 54 48 Tvj = 5 C 42 42 36 36 IC [] IC [] 24 24 8 8 2 2 6 6,,5,,5 2, 2,5 3, 3,5 4, 4,5 5, CE [] 5 6 7 8 9 2 GE [] 开关损耗 IGBT,T2/T3( 典型 ) switchinglossesigbt,t2/t3(typical) Eon=f(IC),Eoff=f(IC) GE=±5,RGon=Ω,RGoff=Ω,CE=4 开关损耗 IGBT,T2/T3( 典型 ) switchinglossesigbt,t2/t3(typical) Eon=f(RG),Eoff=f(RG) GE=±5,IC=,CE=4 2,5 Eon, Eoff, Eon, Tvj = 5 C Eoff, Tvj = 5 C 4, 3,5 Eon, Eoff, Eon, Tvj = 5 C Eoff, Tvj = 5 C 2, 3,,5 2,5 E [] E [] 2,,,5,5,,5, 2 4 5 IC [], 2 4 5 7 8 9 RG [Ω]
瞬态热阻抗 IGBT,T2/T3 transientthermalimpedanceigbt,t2/t3 ZthJH=f(t) 反偏安全工作区 IGBT,T2/T3(RBSO) reversebiassafeoperatingareaigbt,t2/t3(rbso) IC=f(CE) GE=±5,RGoff=Ω,Tvj=5 C ZthJH: IGBT 7 IC, Modul IC, Chip 5 ZthJH [K/W] IC [] 4 2 i: ri[k/w]: τi[s]:,42,5 2,9,5 3,79,5 4,58,2,,,, t [s] 2 4 5 7 CE [] 正向偏压特性 二极管,D2/D3( 典型 ) forwardcharacteristicofdiode,d2/d3(typical) IF=f(F) 开关损耗 二极管,D2/D3( 典型 ) switchinglossesdiode,d2/d3(typical) Erec=f(IF) RGon=6.8Ω,CE=4 55 5 45 4 Tvj = 5 C,,9,8,7 Erec, Erec, Tvj = 5 C 35, IF [] E [],5 25,4 2 5,,2 5,,,5,,5 2, F [], 2 4 5 IF []
开关损耗 二极管,D2/D3( 典型 ) switchinglossesdiode,d2/d3(typical) Erec=f(RG) IF=,CE=4 瞬态热阻抗 二极管,D2/D3 transientthermalimpedancediode,d2/d3 ZthJH=f(t),9,8 Erec, Erec, Tvj = 5 C ZthJH: Diode,7, E [],5,4 ZthJH [K/W],,2,, 2 4 5 RG [Ω] i: ri[k/w]: τi[s]:,25,5 2,3,5 3,5,5 4,65,2,,,, t [s] 负温度系数热敏电阻 温度特性 NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) Rtyp R[Ω] 2 4 8 2 4 TNTC [ C] 2
接线图 /Circuitdiagram J 封装尺寸 /Packageoutlines Infineon 3
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