Chapter 3 1
N P 掺 ( 掺 ) MOS 2
3
掺 Si Ge (SiGe), (SiC) (GaAs), (InP) 4
5
P 掺 掺 N 掺 6
, E c, E g, E v 7
E g = 1.1 ev E g = 8 ev 2.7 cm 4.7 cm ~ 10 10 cm > 10 20 cm 8
Shared electrons Si Si Si Si Si Si Si Si Si Si Si Si Si - Si 9
N ( ) 掺 Si Si Si Si As Si, E c E g = 1.1 ev E d ~ 0.05 ev Si Si - Si, E v 10
P ( ) 掺, E c Si Si Si Si B Si E g = 1.1 ev Si Si - Si, E v E a ~ 0.05 ev 11
, E c, Ec, Ec E g = 1.1 ev E a ~ 0.05 ev E g = 1.1 ev E g = 1.1 ev, E v, E v, E v 12
掺 N, 掺 13
掺 掺 ( ) 掺 N P 14
(Bipolar transistor) (MOS transistor) 15
l h w R l wh 16
IC 掺 17
l d h hl d C 0 0 8.85 10-12 F/m 18
DRAM High- 19
2 2 1 1 掺 20
RC,, l I d w 21
P-N 22
V1 V2 P1 P2 V1 > V2, P1 > P2, V1 < V2, P1 < P2, 23
P-N P + + + + + + + + + + N Vn Vp V0 24
Intrinsic Potential) kt V ln 0 q N a 2 i n N d k N a T q N d n i V 0 ~ 0.7 V 25
I -I 0 V 26
PNP NPN 27
NPN PNP E E B C B N P N C C E B C B P N P E 28
NPN Al Cu Si SiO 2 n + p n p + + n + P p + N 29
NPN CVD CVD CVD p n + p n + n + P 30
MOS Metal-oxide-semiconductor MOSFET (MOS Field Effect Transistor) 31
NMOS V G V D V G SiO 2 n + p-si n + V D 32
NMOS V G = 0 V D V G > V T > 0 V D > 0 SiO 2 n + p-si n + SiO 2 n + + + + + + + + p-si n + 33
PMOS V G = 0 V D V G < V T < 0 V D > 0 SiO 2 p + n-si p + SiO 2 p + + + + + + + + n-si p + 34
MOSFET 35
MOSFET BiCMOS : : (LED) 36
100% 8% 4% 50% MOSFET 88% 1980 1990 2000 37
IC IC chip 1961,, $150.00 TV, VCR, 38
PMOS MOFET, 1960 1970 NMOS 39
NMOS PMOS 1970s 1980s 1980s CMOS 40
CMOS 1980s IC 41
CMOS V dd V in V out PMOS V in V out NMOS In Out V ss 0 1 1 0 42
CMOS IC n + p + / p-si STI n-si USG Bulk Si 43
BiCMOS CMOS + bipolar 1990s CMOS Bipolar CMOS IC 1 44
IC (ASIC) 45
Dynamic random access memory (DRAM) Static random access memory (SRAM) Erasable programmable read only memory (EPROM) FLASH (EEPROM) 46
DRAM IC 47
DRAM NMOS V dd 48
SRAM (cache memory) 6 DRAM 49
EPROM (BIOS) UV 50
EPROM V G V D n + 2 1 p-si n + 51
EPROM V G >V T >0 V D > 0 n + 2 e - e - e - e - e - e - e - p-si n + 52
EPROM V G = 0 UV light V D n + e - e - 2 p-si n + 53
54 IC IC, SiO 2 CMP CVD PVD ( RIE) ( ) ( ) ( ) ( )
掺 掺 55
SiO 2 P-Silicon n + 56
n + n-epi P-Silicon 57
SiO 2 p + n-epi p+ n + P-Silicon 58
p + n + p n + n-epi p+ n + P-Silicon 59
SiO 2 Al Cu Si p + n + p n+ n-epi p + n + P-Silicon 60
SiO 2 Al Cu Si p + n + p n+ p + n-epi n + P-Silicon CVD oxide 61
1960s: PMOS IC 掺 PMOS 62
PMOS (1960s) (R) (R) (A) (R) 1. ( / ) (P) (A) (R) 4. ( ) (P) / (R) (R) S/D ( / ) (A) (R) 2. ( ) (P) (H) (R) CVD (A) / (R) 5. ( ) (P) (A) (R) 3. ( ) (P) 63
PMOS CVD p + N-Silicon p + 64
N-Silicon N-Silicon N-Silicon N-Silicon 65
/UV Light / N-Silicon N-Silicon N-Silicon N-Silicon 66
/ 掺 N-Silicon p + p + N-Silicon p + p + N-Silicon p + p + N-Silicon 67
Al Si p + p + N-Silicon p + p + N-Silicon CVD p + N-Silicon p + p + N-Silicon p + 68
NMOS (1970 掺 NMOS PMOS NMOS PMOS 69
, P + n + n + p-silicon / 70
NMOS (1970s) PSG 3. 1. PSG/USG / / 4. 2. / S/D CVD 5. CVD USG PSG 71
NMOS p-si p-si p-si p-si p-si poly p-si poly P + p-si poly poly n + p-si n + 72
NMOS PSG PSG poly p-si PSG poly p-si PSG PSG PSG poly p-si Al Si PSG poly p-si Al Si Al Si Si 3 N 4 PSG poly p-si PSG poly n + n + p-si 73
CMOS 1980s MOSFET LCD LED CMOS NMOS IC 74
CMOS 75
CMOS PD2 Nitride PD1 Oxide 2, Al Cu Si p + n + IMD PMD n + Al Cu Si BPSG LOCOS SiO 2 p + P USG p + p + N 76
CMOS 2, 1, USG 4 FSG 3 2 M 1 PSG n + n + FSG FSG FSG FSG FSG STI USG p + p + P-well N-well P-epi P-wafer Ti/TiN PMD 77
掺 78
掺 (B) P 掺 P) (As) (Sb) N 掺 掺 N P 79
R= l/a C= A/d DRAM MOSFET 80
1980 MOSFET IC IC ASIC CMOS 81
CMOS ( ) / ( ) 82