1

1 2 TEG p-nsio2-si FEOL-TEG TEGFEOL/ BEOLTEG FEOL 300mm FEOL/BEOLTEG 0.2μm 21.526.9mm2 FEOL/BEOL FEOL FEOL TEG p-nmos

3 1.1 1.2 FEOL/BEOLTEG 1.3 TEGNMOS 1.4 TEG 1.5 1.6 4 / 21/4 /9 22/3 /9 23/3 /9 24/3 (T1/T2) (T3) FEOL1Selete FEOLTei FEOL2Selete BEOL BEOL PKG PKG 1 2 Selete: Tei:

5 CAST-T2/T3 12 / 1 26.9 mm X 21.5 mm 8.6mm8.6mm 5.4mm8.6mm 12.9mm12.9mm 12.9mm2/1 F E O L B E O L μ μ μ μ 6 BEOL WLP WLP Φ QFP MOS Tr. MOS p-n MOS PN QFP MOS Tr. MOS

7 PN NMOS NMOS Sub Si3N4 SiO2 Si3N4 LOCOS LOCOS p-well LOCOS p-sub p-sub LOCOS ; Local Oxidation of Silicon 8 PN NMOS NMOS Sub Poly-Si LOCOS LOCOS Gate-SiO2 p-sub poly-si n+ LOCOS LOCOS n+ n+ p+ Gate-SiO2 p-sub LDD LDD ; Lightly Doped Drain

9 PN NMOS NMOS Sub NiSi n+ LOCOS LOCOS n+ n+ p+ Gate-SiO2 p-sub Ni- W Cu Cu W Poly-Si Cu Poly-Si Low-k SiN P-SiO NiSi P-SiO n+ LOCOS LOCOS n+ n+ p+ Gate-SiO2 p-sub W-Cu 10 [] 100μmx100μmx9 [L] N112.0VL10.6V N1L L1μA 100μmx100μmx9

11 L Vr10V L Vr10V μm2 μm Lp-n 12 N1 Vr11.5V N1 Vr11.5V μm2 μm N1p-n L

13 Lg=0.6μm Wg=10μm p-sioc NiSi/poly-Si Cu W p-sioc NiSi/poly-Si Cu W n+ Cu W n+ Id (A) E-2 E-4 E-6 E-8 E-10 E-12 p-sub FEOL/BEOL Vth 0 0.5 1.0 Vg (V) Vd=3V Vs=Vsub =0V 1.5 Id (ma) 2.0 0.6 0.5 0.4 0.3 0.2 0.1 Vs=Vsub =0V Vg=5V 0 0 1 2 Vd (V) ( 4V 3V 2V 1V 0V 3 14 M1 +5V PAD Cross-under PAD poly-si NMOS SUB PAD GND 0V 5 Lg=0.5um, R=7kΩ 10mV 1 ns

15 tpd ( μ 16 Ω A = =1 / = = R M1 / R M0 = A ICMTS2010 2010-080768

17 18

19 Ω Ω Ω Ω Ω L/S=0.2/0.2μm, 100mm Selete Tei 20 KrFi0.2 μm21.526.9 mm2 12p-n TEGTEG FEOL FEOL FEOLCASMATBEOL FEOL/BEOLTEG p-nfeol TEG

21 CMP Cup-n NaKMOS FEOL n+n-poly-si TEG Cu 22 2.1 a. b. 2.2 2.3 2.4 a. p-n b.

23 μ 32sq 100sq X 9 100sq μm 2 μm 2 μm 2 X9 24 11.5V Cu 100μm9

25 400 200 100 23 [] Cu(NO3)2/HF Cu(NO3)2/HF N2hr Cu 26 SiCSiCNSiN L=1.6μm W=10μm

27 Vt Vt 28 M2MOS M1MOS FGMOS Vt VtVt M2M1MOSNa1E+12 FGMOS1E+14Na

29 M2MOS M1MOS FGMOS Vt VtVt M2M1MOSK1E+13 K1E+12 FGMOS1E+14K 30 100μ

31 N- N+ Poly-Si 0 0 3N- 200 Mpa5% 32 TEG 2X2μm 6.5nm M1 2X2μm 6.5nm 46 46 M2

33 55k 05/46 125k 23/46 N Low-k: p-sioc M2 300k 38/46 2X2μm, 6.5nm 34 NLow-k: p-sioc NLow-k: p-msq PLow-k: p-sioc PLow-k: p-msq M1M2 p-msqp-sioc PNN

35 36

37 Ω Ω Ω P Cu 2012 38 1 3 5 7 9 11 13 15 17 19 21 23 2 4 6 8 10 12 14 16 18 20 22 24

39 16 16 ( ( ( ICPT2010ADMETA2010,2011No. 6,7,9,12,15 40 Cup-n NaKM1M2MOS n+n-poly-si TEG CMPCu p-n

41 Low-k Low-k RO Low-k CMP MOS Low-k 208QFP Low-k BC BCWLP 42 3.1 ROLow-k 3.2 MOS 3.3 QFP 3.4 WLP

43 Low-k p-sioc MSQ1 MSQ2 MSQ3 CVD MSQ MSQ MSQ - A B B Shrinkage - 10 10 11 3.02 2.36 2.38 2.24 1 0.74 0.79 0.72 Pore size - 6.1 10.1 13.2 (A/cm2) 1.E-02 1.E-03 1.E-04 1.E-05 1.E-06 1.E-07 1.E-08 1.E-09 1.E-10 1.E-11 1.E-12 Low-k 1 = 0.5 = P(D) 0 1 2 3 4 5 6 (MV/cm) 1 p-sioc MSQ1 MSQ2 MSQ3 0.5-0.99 0.61 0.58 1 10 100 D () MSQ 44 as depo k 3.4 3.2 3.0 2.8 2.6 k=0.26 k=0.4 k=0.4 CMP as depo k=0.44 CF4/Ar/N2 2.4 2.2 NH3 + H2/He CMP (A/cm2) kc-v 2.0 1.E-02 1.E-03 1.E-04 1.E-05 1.E-06 1.E-07 1.E-08 1.E-09 1.E-10 1.E-11 1.E-12 p-sioc p-sioc 0 1 2 3 4 5 6 (MV/cm)

45 ( ) 1.1 M1_11 _MSQ1 M1_11 _MSQ2(1) 1.0 M1_11 _MSQ2(2) M1_11 _MSQ3 0.9 0.8 Cap Low-k 0.7 70 90 110 130 150 170 (kω) CuCap MSQ3MSQ125% CapMSQ1MSQ25% MSQ39% 46 C (pf/100mm) 7 6 5 Cap MSQ1 MSQ2 MSQ3 60 80 100 120 R (kω/100mm) RC ( ) 1.1 1.0 0.9 0.8 0.7 Cap MSQ1 MSQ2 MSQ3 Low-k 70 90 110 130 150 170 (kω) RCLow-k RC

47 M2 / Low-k Via / Low-k M1 / Low-k FG MOS M1 MOS M1 M2 MOS M2 [nm] FG / p-sio FG 250 500 800 Si sub (channel) 48 + 2.5 MV/cm* : 30s MOS: L1.6 x W10 [μm] Vd = 0.1, Vs = Vsub = 0 [V] Id : 20 na Vg: 0-2.5 MV/cm* : 30s 8 Id : 20 na Vg: 0 200V M2 200 V / 800 nm = 2.5 MV/cm

49 Id (A) 1E-05 1E-06 1E-07 1E-08 1E-09 1E-10 1E-11 1E-12 M2MOS : 20nA + Vth-Vth - Vth+Vth 1E-13 0 50 100 150 200 Vg (V) Vth (V) 200 150 100 50 M2 M1 FG 0 0 4 8 12 16 2011-2739672012-080920 50 MOS 6x4 FG M M V) FGM1MOS M2MSQp-SiOC

51 =250nmp-SiO=250nm=300nm =4p-SiO=4=3 E11/cm2 P-SiO MSQp-SiOC1/2 52 TEG Poly-Si MOS

53 FIM QFP 208pin 28mm 0.5mm 1.4mm 8.6mm 25410μm Low-k p-siocmsq1 BC1 54 = 11 = 5 V NMOS: μ μ poly-si: 30μm L X 1μm W MSQ1 p-sioc [%] [%] AL PKG AL PKG f [MHz] f R[kΩ] [MHz] QFPPKG6%

55 poly-si: 10μm L X 1μm W MSQ1 p-sioc [%] [%] AL PKG AL PKG R[kΩ] R[kΩ] QFPpoly-Si4% 56 BC

57 Si 58 Poly-Si

59 BC2 BC5 BC3 BC6 BC4 poly-si110μm TC -5515 12515 BCWLPUF500 poly-si 60 NMOS BC2 BC5 BC3 BC6 BC4 NMOS Lg=0.5μmWg=10μm Vth @ Id=10nAVd=3V BCWLPUF500 NMOS

61 UF UF TC5515min12515min IR Al / BC 62 μ μ μ φ φ μ μ μ μ μ μ μ μ μ μ

63 3 IR BC1 Si BC1 BC1 10 μm Cu BC2 50 μm SEM 50 um SEM BC2 BC1Cu 64 μ μ μ % 100 80 60 40 20 0 BC

65 CuTi/BC(MPa) E3 (GPa) 200.83 241 251.04 341.42 BC21 66 Low-k Low-kMOS 208QFPLow-k BC QFP6% poly-si BCWLP WLPBC