主要参数 MAIN CHARACTERISTICS ID 18A 封装 Package VDSS 200 V Rdson-max (@Vgs=10V) 0.15Ω Qg-typ 27.5nC N 沟道增强型场效应晶体管 N- CHANNEL MOSFET 用途 高频开关电源 电子镇流器 UPS 电源 APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge UPS 产品特性 低栅极电荷 低 C rss ( 典型值 25pF) 开关速度快 产品全部经过雪崩测试 高抗 dv/dt 能力 RoHS 产品 FEATURES Low gate charge Low C rss (typical 25pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product 订货信息 ORDER MESSAGE 订货型号 Order codes 印 记 封 装 有卤 - 条管 无卤 - 条管 有卤 - 编带 无卤 - 编带 Marking Package Halogen-Tube Halogen-Free-Tube Halogen-Reel Halogen-Free-Reel JCS640VH-V-B JCS640VH-V-BR N/A N/A JCS640VH IPAK JCS640RH-R-B JCS640RH-R-BR JCS640RH-R-A JCS640RH-R-AR JCS640RH DPAK JCS640CH-C-B JCS640CH-C-BR N/A N/A JCS640CH TO-220C JCS640FH-F-B JCS640FH-F-BR N/A N/A JCS640FH TO-220MF 版本 :201807E 1/12
绝对最大额定值 ABSOLUTE RATINGS (Tc=25 ) 项 目 Parameter 最高漏极 - 源极直流电压 Drain-Source Voltage 连续漏极电流 Drain Current -continuous 最大脉冲漏极电流 ( 注 1) Drain Current -pulse (note 1) 最高栅源电压 Gate-Source Voltage 单脉冲雪崩能量 ( 注 2) Single Pulsed Avalanche Energy(note 2) * 漏极电流由最高结温限制 符号 *Drain current limited by maximum junction temperature 数值 Value Symbol JCS640VH/RH/CH JCS640FH 单位 V DSS 200 V I D T=25 T=100 Unit 18 18* A 16 16* A I DM 72 72* A V GSS ±30 V E AS 259 mj 雪崩电流 ( 注 1) Avalanche Current (note 1) I AR 18 A 重复雪崩能量 ( 注 1) Repetitive Avalanche Current (note 1) 二极管反向恢复最大电压变 化速率 ( 注 3) Peak Diode Recovery dv/dt (note 3) 耗散功率 Power Dissipation 最高结温及存储温度 Operating and Storage Temperature Range 引线最高焊接温度 Maximum Lead Temperature for Soldering Purposes E AR 14 4.4 mj dv/dt 5.5 V/ns P D T C =25 -Derate above 25 140 44 W 1.12 0.35 W/ T J,T STG -55~+150 T L 300 版本 :201807E 2/12
电特性 ELECTRICAL CHARACTERISTIC 项目 Parameter 关态特性 Off Characteristics 漏 - 源击穿电压 Drain-Source Voltage 击穿电压温度特性 Breakdown Voltage Temperature Coefficient 零栅压下漏极漏电流 Zero Gate Voltage Drain Current 正向栅极体漏电流 Gate-body leakage current, forward 反向栅极体漏电流 Gate-body leakage current, reverse 通态特性 On-Characteristics 阈值电压 Gate Threshold Voltage 静态导通电阻 Static Drain-Source On-Resistance 正向跨导 Forward Transconductance 动态特性 Dynamic Characteristics 栅电阻 Gate resistance 输入电容 Input capacitance 输出电容 Output capacitance 反向传输电容 Reverse transfer capacitance 符号 Symbol 测试条件 Tests conditions 最小典型最大单位 Min Typ Max Units BV DSS I D =250μA, V GS =0V 200 - - V ΔBV DSS /ΔT J 25 I DSS I D =250μA, referenced to - 0.2 - V/ V DS =200V, V GS =0V, T C =25 - - 1 μa V DS =160V, T C =125 - - 10 μa I GSSF V DS =0V, V GS =30V - - 100 na I GSSR V DS =0V, V GS =-30V - - -100 na V GS(th) V DS = V GS, I D =250μA 2.0-4.0 V R DS(ON) V GS =10V, I D =9A 0.08 0.12 0.15 Ω g fs - 14.5 - S V DS = 40V, I D =9A(note 4) V DS Open, Rg 0.5 1.5 2.5 Ω f=1.0mh Z C iss f=1.0mh Z C oss 104 173 300 pf C rss V DS =25V, 350 1001 1650 pf V GS =0V, 15 25 40 pf 版本 :201807E 3/12
电特性 ELECTRICAL CHARACTERISTICS 项 Reverse recovery charge 热特性 THERMAL CHARACTERISTIC 项 目 Parameter 结到管壳的热阻 Thermal Resistance, Junction to Case 结到环境的热阻 Thermal Resistance, Junction to Ambient 目 Parameter 开关特性 Switching Characteristics 符号 Symbol 符号 Symbol 测试条件 Tests conditions 最大值 Value JCS640VH/RH/CH 最小典型最大单位 Min Typ JCS640FH Max Units 延迟时间 Turn-On delay time t d (on) V DD =100V,I D =18A,R G =25Ω 9 15.2 21 ns 上升时间 Turn-On rise time t r V GS =10V 16.5 38.7 60 ns 延迟时间 Turn-Off delay time t d (off) (note 4,5) 21.5 46.4 71.5 ns 下降时间 Turn-Off Fall time t f 6.8 12.8 18.8 ns 栅极电荷总量 Total Gate Charge Q g V DS =160V, 12 27.5 42 nc 栅 - 源电荷 Gate-Source charge Q gs I D =18A 2.5 5.7 8.9 nc 栅 - 漏电荷 Gate-Drain charge Q gd V GS =10V(note 4,5) 5.8 10.8 15.8 nc 漏 - 源二极管特性及最大额定值 Drain-Source Diode Characteristics and Maximum Ratings 正向最大连续电流 Maximum Continuous Drain-Source Diode Forward Current 正向最大脉冲电流 Maximum Pulsed Drain-Source Diode Forward Current 正向最大连续电流 Maximum Continuous Drain-Source Diode Forward Current 反向恢复时间 Reverse recovery time 反向恢复电荷 注 : 1: 脉冲宽度由最高结温限制 I S - - 18 A I SM - - 72 A V SD V GS =0V, I S =18A - 1.4 V t rr 124 224 324 ns V GS =0V, I S =18A Q rr 2:L=1.6mH, I AS=18A, V DD=50V, R G=25 Ω, 起始结温 T J=25 3:I SD 18A,di/dt 200A/μs, VDD BV DSS, 起始结温 T J=25 4: 脉冲测试 : 脉冲宽度 300μs, 占空比 2% 5: 基本与工作温度无关 di F /dt=100a/μs (note 4) 0.58 1.38 2.18 μc 单位 Unit Rth(j-c) 0.89 2.85 /W Rth(j-A) 62.5 /W Notes: 1:Pulse width limited by maximum junction temperature 2:L=1.6mH, I AS=18A, V DD=50V, R G=25 Ω,Starting T J=25 3:I SD 18A,di/dt 200A/μs, VDD BV DSS, Starting T J=25 4:Pulse Test:Pulse Width 300μs, Duty Cycle 2% 5:Essentially independent of operating temperature 版本 :201807E 4/12
特征曲线 ELECTRICAL CHARACTERISTICS (curves) Typical Output Characteristics, TC = 25 C Transfer Characteristics 100 I D [A] 25 150 10 Notes: 1.250μs pulse test 2.V DS =40V 1 4 6 8 10 12 V GS [V] Breakdown Voltage Variation vs. Temperature Body Diode Forward Voltage Variation vs. Source Current and Temperature Capacitance Characteristics Gate Charge Characteristics Capacitance [pf] 2.0x10 3 1.5x10 3 1.0x10 3 5.0x10 2 0.0 C rss C iss C oss 10 0 10 1 C iss =C gs +C gd (C ds =shorted) C oss =C ds +C gd C rss =C gd V GS Gate Source Voltage[V] V D S Drain-Source Voltage [V] 0 12 10 8 6 4 2 V DS =100V V DS =40V V DS =160V Notes: I D =18A 0 10 20 30 Q g Toltal Gate Charge [nc] 版本 :201807E 5/12
特征曲线 ELECTRICAL CHARACTERISTICS (curves) On-Resistance Variation Maximum Drain Current vs. Temperature vs. Case Temperature 20 I D Drain Current [A] 16 12 8 4 0 25 50 75 100 125 150 175 T C Case Temperature [ ] Maximum Safe Operating Area For JCS640CH/VH/RH Maximum Safe Operating Area For JCS640FH 版本 :201807E 6/12
特征曲线 ELECTRICAL CHARACTERISTICS (curves) Transient Thermal Response Curve For JCS640CH/VH/RH 1 Z θ JC (t) Thermal Response 0. 1 0. 0 1 D = 0. 5 0. 2 0. 1 0. 0 5 0. 0 2 0. 0 1 s i n g l e p u l s e N o t e s : 1 Z θ J C ( t ) = 0. 8 9 / W M a x 2 D u t y F a c t o r, D = t 1 / t 2 3 T J M - T c = P D M * Z θ J C ( t ) P D M t 1 t 2 1 E - 5 1 E - 4 1 E - 3 0. 0 1 0. 1 1 1 0 t 1 S q u a r e W a v e P u l s e D u r a t i o n [ s e c ] 1 0 Transient Thermal Response Curve For JCS640FH Z θ JC (t) Thermal Response 1 0. 1 D = 0. 5 0. 2 0. 1 0. 0 5 0. 0 2 0. 0 1 s i n g l e p u l s e N o t e s : 1 Z θ J C ( t ) = 2. 8 5 / W M a x 2 D u t y F a c t o r, D = t 1 / t 2 3 T J M - T c = P D M * Z θ J C ( t ) P D M t 1 t 2 0. 0 1 1 E - 5 1 E - 4 1 E - 3 0. 0 1 0. 1 1 1 0 t 1 S q u a r e W a v e P u l s e D u r a t i o n [ s e c ] 版本 :201807E 7/12
外形尺寸 PACKAGE MECHANICAL DATA TO-220C 单位 Unit:mm 版本 :201807E 8/12
外形尺寸 PACKAGE MECHANICAL DATA TO-220MF 单位 Unit:mm 版本 :201807E 9/12
外形尺寸 PACKAGE MECHANICAL DATA IPAK 单位 Unit:mm 版本 :201807E 10/12
外形尺寸 PACKAGE MECHANICAL DATA DPAK 单位 Unit:mm 版本 :201807E 11/12
注意事项 1. 吉林华微电子股份有限公司的产品销售分 为直销和销售代理, 无论哪种方式, 订货 时请与公司核实 2. 购买时请认清公司商标, 如有疑问请与公 司本部联系 3. 在电路设计时请不要超过器件的绝对最大 额定值, 否则会影响整机的可靠性 4. 本说明书如有版本变更不另外告知 NOTE 1. Jilin Sino-microelectronics co., Ltd sales its product either through direct sales or sales agent, thus, for customers, when ordering, please check with our company. 2. We strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don t be hesitate to contact us. 3. Please do not exceed the absolute maximum ratings of the device when circuit designing. 4. Jilin Sino-microelectronics co., Ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. 联系方式吉林华微电子股份有限公司 CONTACT JILIN SINO-MICROELECTRONICS CO., LTD. 公司地址 : 吉林省吉林市深圳街 99 号邮编 :132013 总机 :86-432-64678411 传真 :86-432-64665812 网址 :HTUwww.hwdz.com.cnUTH ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel: 86-432-64678411 Fax:86-432-64665812 Web Site:HTUwww.hwdz.com.cnUTH 市场营销部地址 : 吉林省吉林市深圳街 99 号邮编 :132013 电话 : 86-432-64675588 64675688 64678411 传真 : 86-432-64671533 MARKET DEPARTMENT ADD: No.99 Shenzhen Street, Jilin City, Jilin Province, China. Post Code: 132013 Tel: 86-432-64675588 64675688 64678411 Fax: 86-432-64671533 版本 :201807E 12/12