EasyDUAL 模块 采用 CoolSiC TrenchMOSFET 带有 pressfit 压接管脚和温度检测 NTC EasyDUALmodulewithCoolSiC TrenchMOSFETandPressFIT/NTC / VDSS = 1200V ID nom = 100A / IDRM = 200A 潜在应用 PotentialApplicatio DC/DC 变换器 DC/DCconverter UPS 系统 UPSsystems 太阳能应用 Solarapplicatio 高频开关应用 HighFrequencySwitchingapplication 电气特性 ElectricalFeatures 低开关损耗 Lowswitchinglosses 低电感设计 Lowinductivedesign 高电流密度 Highcurrentdeity 机械特性 MechanicalFeatures PressFIT 压接技术 PressFITcontacttechnology 集成 NTC 温度传感器 IntegratedNTCtemperatureseor 集成的安装夹使安装坚固 Rugged mounting due to integrated mounting clamps ModuleLabelCode BarcodeCode128 DMX-Code ContentoftheCode ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) Digit 1-5 6-11 12-19 20-21 22-23 Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.2 www.infineon.com
MOSFET/MOSFET 最大额定值 /MaximumRatedValues 漏源极电压 Drain-sourcevoltage 直流漏极电流 DCdraincurrent 脉冲漏极电流 Pulseddraincurrent 栅源峰值电压 Gate-sourcevoltage VDSS 1200 V Tvj = 175 C, VGS = 15 V TH = 35 C ID nom 100 A 经设计验证,tp 由 Tvjmax 限定 verifiedbydesign,tplimitedbytvjmax ID pulse 200 A VGSS -10 / 20 V 特征值 /CharacteristicValues min. typ. max. 漏源通态电阻 Drain-sourceonresistance ID = 100 A VGS = 15 V RDS on 11,3 14,8 16,5 栅极阈值电压 Gatethresholdvoltage 总的栅极电荷 Totalgatecharge 内部栅极电阻 Internalgateresistor 输入电容 Inputcapacitance 输出电容 Outputcapacitance 反向传输电容 Reversetrafercapacitance ID=40,0mA,VDS=VGS,Tvj=25 C (testedafter1mspulseatvgs=+20v) mω VGS(th) 3,45 4,50 5,55 V, VDS = 800 V QG 0,248 µc RGint 1,0 Ω f = 1 MHz, VDS = 800 V, VGS = 0 V, VAC = 25 mv f = 1 MHz, VDS = 800 V, VGS = 0 V, VAC = 25 mv f = 1 MHz, VDS = 800 V, VGS = 0 V, VAC = 25 mv COSSstoredenergy VDS = 800 V, 零栅电压漏极电流 Zerogatevoltagedraincurrent 栅极漏电流 Gate-sourceleakagecurrent 开通延迟时间 ( 电感负载 ) Turnondelaytime,inductiveload 上升时间 ( 电感负载 ) Risetime,inductiveload 关断延迟时间 ( 电感负载 ) Turnoffdelaytime,inductiveload 下降时间 ( 电感负载 ) Falltime,inductiveload 开通损耗 ( 每脉冲 ) Turn-onenergylossperpulse 关断损耗 ( 每脉冲 ) Turn-offenergylossperpulse 短路数据 SCdata 结 - 散热器热阻 Thermalresistance,junctiontoheatsink 在开关状态下温度 Temperatureunderswitchingconditio Ciss 7,36 nf Coss 0,44 nf Crss 0,056 nf Eoss 176 µj VDS = 1200 V, VGS = -5 V IDSS 0,40 380 µa VDS = 0 V RGon = 3,90 Ω RGon = 3,90 Ω RGoff = 3,90 Ω RGoff = 3,90 Ω, Lσ = 35 nh di/dt = 5,20 ka/µs (), RGon = 3,90 Ω, Lσ = 35 nh du/dt = 23,0 kv/µs (), RGoff = 3,90 Ω, VDD = 800 V VDSmax = VDSS -LsDS di/dt RG = 10,0 Ω VGS = 20 V VGS = -10 V tp 2 µs, tp 2 µs, IGSS td on tr td off tf Eon Eoff ISC 25,1 21,6 21,5 16,4 16,4 16,4 64,3 68,2 68,2 28,0 31,0 31,0 1,40 1,45 1,49 0,647 0,665 0,665 840 820 每个 MOSFET/perMOSFET RthJH 0,553 K/W 400 na mj mj A A Tvj op -40 150 C Bodydiode 最大额定值 /MaximumRatedValues DCbodydiodeforwardcurrent Tvj = 175 C, VGS = -5 V TH = 35 C ISD 32 A 特征值 /CharacteristicValues min. typ. max. 正向电压 ISD = 100 A, VGS = -5 V 4,60 5,65 Forwardvoltage ISD = 100 A, VGS = -5 V ISD = 100 A, VGS = -5 V VSD 4,35 4,30 V Datasheet 2 V2.2
负温度系数热敏电阻 /NTC-Thermistor 特征值 /CharacteristicValues min. typ. max. 额定电阻值 Ratedresistance R100 偏差 DeviationofR100 耗散功率 Powerdissipation B- 值 B-value B- 值 B-value B- 值 B-value 根据应用手册标定 Specificationaccordingtothevalidapplicationnote. TNTC = 25 C R25 5,00 kω TNTC = 100 C, R100 = 493 Ω R/R -5 5 % TNTC = 25 C P25 20,0 mw R2 = R25 exp [B25/50(1/T2-1/(298,15 K))] B25/50 3375 K R2 = R25 exp [B25/80(1/T2-1/(298,15 K))] B25/80 3411 K R2 = R25 exp [B25/100(1/T2-1/(298,15 K))] B25/100 3433 K 模块 /Module 绝缘测试电压 Isolationtestvoltage 内部绝缘 Internalisolation 爬电距离 Creepagedistance 电气间隙 Clearance 相对电痕指数 Comperativetrackingindex 杂散电感, 模块 Strayinductancemodule 储存温度 Storagetemperature Anpresskraft für mech. Bef. pro Feder mountig force per clamp 重量 Weight RMS, f = 50 Hz, t = 1 min. VISOL 3,0 kv 基本绝缘 (class1,iec61140) basiciulation(class1,iec61140) 端子至散热器 /terminaltoheatsink 端子至端子 /terminaltoterminal 端子至散热器 /terminaltoheatsink 端子至端子 /terminaltoterminal Al2O3 11,5 6,3 10,0 5,0 CTI > 200 min. typ. max. mm mm LsCE 9,0 nh Tstg -40 125 C F 20-50 N G 24 g The current under continuous operation is limited to 25 A rms per connector pin. Important note: The selection of positive and negative gate-source voltages impacts the long-term behavior of the device. The design guidelines described in Application Note AN 2018-09 must be coidered to eure sound operation of the device over the planned lifetime. Datasheet 3 V2.2
反偏安全工作区 MOSFET(RBSOA) reversebiassafeoperatingareamosfet(rbsoa) ID=f(VDS) VGS=-5V/15V,Tvj=150 C,RG=3,9Ω 瞬态热阻抗 MOSFET traientthermalimpedancemosfet ZthJH=f(t) 240 ID, Modul ID, Chip 1 Zth: MOSFET 200 160 120 ZthJH [K/W] 0,1 80 40 i: ri[k/w]: τi[s]: 1 0,0383 0,000795 2 0,107 0,0138 3 0,363 0,1702 4 0,0447 1,327 0 0 200 400 600 800 1000 1200 1400 VDS [V] 0,01 0,001 0,01 0,1 1 10 t [s] 输出特性 MOSFET( 典型 ) outputcharacteristicmosfet(typical) ID=f(VDS) VGS=15V 传输特性 MOSFET( 典型 ) trafercharacteristicmosfet(typical) ID=f(VGS) VDS=20V 200 175 Tvj = 25 C Tvj = 125 C Tvj = 150 C 200 175 150 150 125 125 100 100 75 75 50 50 25 25 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 VDS [V] 0 3 4 5 6 7 8 9 10 11 12 VGS [V] Datasheet 4 V2.2
开关损耗 MOSFET( 典型 ) switchinglossesmosfet(typical) Eon=f(ID),Eoff=f(ID) VGS=-5V/15V,RGon=3,9Ω,RGoff=3,9Ω,VDS=600V 开关损耗 MOSFET( 典型 ) switchinglossesmosfet(typical) Eon=f(RG),Eoff=f(RG) VGS=-5V/15V,ID=100A,VDS=600V 3,0 Eon, Eoff, ; Eoff, Eon, 15,0 13,5 Eon, Eoff, ; Eoff, Eon, 2,5 12,0 2,0 10,5 9,0 E [mj] 1,5 E [mj] 7,5 6,0 1,0 4,5 0,5 3,0 1,5 0,0 0 25 50 75 100 125 150 175 200 0,0 0 4 8 12 16 20 24 28 32 36 40 RG [Ω] 负温度系数热敏电阻 温度特性 NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) 100000 Rtyp 10000 R[Ω] 1000 100 0 20 40 60 80 100 120 140 160 TNTC [ C] Datasheet 5 V2.2
接线图 /Circuitdiagram 封装尺寸 /Packageoutlines Infineon Datasheet 6 V2.2
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