DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 Supersedes data of 1999 Apr 01 1999 Dec 06
FEATURES High power gain Easy power control Excellent ruggedness Source on underside eliminates DC isolators, reducing common mode inductance Designed for broadband operation (1.8 to 2 GHz) Internal input and output matching for high gain and efficiency. PINNING PIN DESCRIPTION 1 drain 2 gate 3 source, connected to flange APPLICATIONS Common source class-ab operation for PCN and PCS applications in the 1800 to 2000 MHz frequency range. handbook, halfpage 1 2 3 DESCRIPTION Top view MBK394 Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange. Fig.1 Simplified outline SOT502A. QUICK REFERENCE DATA RF performance at T h =25 C in a common source test circuit. MODE OF OPERATION f (MHz) V DS (V) P L (W) G p (db) η D (%) d im (dbc) Two-tone, class-ab f 1 = 2000; f 2 = 2000.1 26 65 (PEP) >10.5 >30 25 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER MIN. MAX. UNIT V DS drain-source voltage 65 V V GS gate-source voltage ±15 V I D DC drain current 9 A T stg storage temperature 65 +150 C T j junction temperature 200 C CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 1999 Dec 06 2
THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT thermal resistance from junction to T h =25 C, P tot = 152 W, note 1 1.15 K/W heatsink R th j-h Note 1. Determined under specified RF operating conditions. CHARACTERISTICS T j =25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)DSS drain-source breakdown voltage V GS = 0; I D = 1.4 ma 65 V V GSth gate-source threshold voltage V DS = 10 V; I D = 140 ma 1.5 3.5 V I DSS drain-source leakage current V GS = 0; V DS =26V 10 µa I DSX on-state drain current V GS =V GS th +9V; V DS =10V 18 A I GSS gate leakage current V GS = ±15 V; V DS =0 250 na g fs forward transconductance V DS = 10 V; I D =5A 4 S R DSon drain-source on-state resistance V GS =V GS th +9V; I D =5A 0.17 Ω C rss feedback capacitance V GS = 0; V DS = 26 V; f = 1 MHz 3.4 pf APPLICATION INFORMATION RF performance in a common source class-ab circuit. T h =25 C; R th j-h = 1.15 K/W, unless otherwise specified. MODE OF OPERATION Ruggedness in class-ab operation f (MHz) V DS (V) I DQ (ma) The is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: V DS = 26 V; I DQ = 350 ma; P L = 65 W; f = 2000 MHz. P L (W) G p (db) η D (%) d im (dbc) Two-tone, class-ab f 1 = 2000; f 2 = 2000.1 26 350 65 (PEP) >10.5 >30 25 1999 Dec 06 3
15 handbook, halfpage G p (db) G p MGS950 50 η D (%) 40 0 handbook, halfpage d im (dbc) 10 MGS951 20 10 η D 30 30 20 10 40 50 d 3 d 5 d 7 5 0 0 20 40 60 80 100 P L (PEP) (W) 60 0 20 40 60 80 100 P L (PEP) (W) f 1 = 2000 MHz; f 2 = 2000.1 MHz; V DS =26V; I DQ = 350 ma; T h 25 C. f 1 = 2000 MHz; f 2 = 2000.1 MHz; V DS =26V; I DQ = 350 ma; T h 25 C. Fig.2 Power gain and drain efficiency as a function of load power; typical values. Fig.3 Intermodulation distortion as a function of load power; typical values. 8 handbook, halfpage Z i (Ω) 6 MGS952 4 handbook, halfpage Z L (Ω) 2 R L MGS953 4 x i 0 2 r i 2 0 4 X L 2 1.6 1.8 2 2.2 2.4 f (GHz) 6 1.6 1.8 2 2.2 2.4 f (GHz) V DS = 26 V; I D = 350 ma; P L = 65 W; T h 25 C. V DS = 26 V; I D = 350 ma; P L = 65 W; T h 25 C. Fig.4 Input impedance as a function of frequency (series components); typical values. Fig.5 Load impedance as a function of frequency (series components); typical values. 1999 Dec 06 4
handbook, full pagewidth F1 R1 C5 C6 V gate C15 C11 C13 C14 C12 R2 C16 V dd C17 C4 L4 L13 C10 L2 L6 L10 L11 L15 L17 input 50 Ω C3 L20 L1 L3 L5 L7 L8 L9 L12 L14 L16 L18 C9 L19 output 50 Ω C2 C1 C7 C8 MGS954 Fig.6 Class-AB test circuit at f = 2 GHz. 1999 Dec 06 5
List of components (see Figs. 6 and 7) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C2, C7 and C8 Tekelec variable capacitor; type 37271 0.6 to 4.5 pf C3, C9 multilayer ceramic chip capacitor; note 1 12 pf C4, C10 multilayer ceramic chip capacitor; note 2 12 pf C5, C12 and C16 electrolytic capacitor 4.5 µf; 50 V C6, C11 and C15 multilayer ceramic chip capacitor; note 1 1 nf C13 and C17 electrolytic capacitor 100 µf; 63 V 2222 037 58101 C14 multilayer ceramic chip capacitor 100 nf 2222 581 16641 F1 Ferroxcube chip-bead 8DS3/3/8/9-4S2 4330 030 36301 L1 50 Ω 2.9 2.4 mm L2 10.8 Ω 4 16.3 mm L3 50 Ω 3.7 2.4 mm L4 6 Ω 2 30.8 mm L5 50 Ω 3.6 2.4 mm L6 9 Ω 3 19.9 mm L7 50 Ω 7.8 2.4 mm L8 18.5 Ω 4 8.8 mm L9 24.4 Ω 5 6.3 mm L10 and L11 stripline; note 3 5.1 Ω 7 37 mm L12 25.4 Ω 10.1 6mm L13 5.7 Ω 2.4 32.8 mm L14 25.4 Ω 6.4 6mm L15 10 Ω 3.5 17.8 mm L16 50 Ω 10.8 2.4 mm L17 11.8 Ω 3 14.9 mm L18 50 Ω 2.3 2.4 mm L19 50 Ω 3 2.4 mm L20 50 Ω 5.5 2.4 mm R1 and R2 metal film resistor 10 Ω, 0.6 W 2322 156 11009 Notes 1. American Technical Ceramics type 100B or capacitor of same quality. 2. American Technical Ceramics type 100A or capacitor of same quality. 3. The striplines are on a double copper-clad printed-circuit board with Teflon dielectric (ε r = 2.2); thickness 0.79 mm. 1999 Dec 06 6
handbook, full pagewidth 50 50 95 INPUT PH990118 OUTPUT PH990117 V GS V DD C6 R1 C5 C17 C16 C11 R2 F1 C13 C15 C14 C4 C10 C12 C3 C2 C1 C7 C8 C9 INPUT PH990118 OUTPUT PH990117 MGS955 Dimensions in mm. The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (ε r = 2.2), thickness 0.79 mm. The other side is unetched and serves as a ground plane. Fig.7 Component layout for 2 GHz class-ab test circuit. 1999 Dec 06 7
PACKAGE OUTLINE Flanged LDMOST package; 2 mounting holes; 2 leads SOT502A D A 3 F D 1 U 1 B q C c 1 L H U 2 p E 1 E w 1 M A M B M A 2 b w 2 M C M Q 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D 1 E E 1 F H L p Q q U 1 U 2 w 1 w 2 mm 4.72 3.99 12.83 12.57 0.15 0.08 20.02 19.61 19.96 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 3.38 3.12 1.70 1.45 27.94 34.16 33.91 9.91 9.65 0.25 0.51 inches 0.186 0.157 0.505 0.495 0.006 0.003 0.788 0.772 0.786 0.774 0.374 0.366 0.375 0.364 0.045 0.035 0.785 0.745 0.210 0.170 0.133 0.123 0.067 0.057 1.100 1.345 1.335 0.390 0.380 0.01 0.02 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT502A 99-06-07 99-10-13 1999 Dec 06 8
DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Dec 06 9
NOTES 1999 Dec 06 10
NOTES 1999 Dec 06 11
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