FS45R12KE3 -EconoPCK +ModulmitTrench/FeldstopIGBT3undHighEfficiencyDiode -EconoPCK +withtrench/fieldstopigbt3andemittercontrolledhighefficiencydiode IGBT, 逆变器 /IGBT,Inverter 最大额定值 /MaximumRatedValues 集电极 - 发射极电压 Collector-emittervoltage 连续集电极直流电流 ContinuousDCcollectorcurrent 集电极重复峰值电流 Repetitivepeakcollectorcurrent 总功率损耗 Totalpowerdissipation 栅极 - 发射极峰值电压 Gate-emitterpeakvoltage VCES 12 V TC = 8 C, Tvj max = 15 C TC = 25 C, Tvj max = 15 C IC nom IC 45 6 tp = 1 ms ICRM 9 TC = 25 C, Tvj max = 15 Ptot 21 W VGES +/-2 V 特征值 /CharacteristicValues min. typ. max. 集电极 - 发射极饱和电压 Collector-emittersaturationvoltage 栅极阈值电压 Gatethresholdvoltage 栅极电荷 Gatecharge 内部栅极电阻 Internalgateresistor 输入电容 Inputcapacitance 反向传输电容 Reversetransfercapacitance 集电极 - 发射极截止电流 Collector-emittercut-offcurrent 栅极 - 发射极漏电流 Gate-emitterleakagecurrent 开通延迟时间 ( 电感负载 ) Turn-ondelaytime,inductiveload IC = 45, VGE = 15 V IC = 45, VGE = 15 V VCE sat 1,7 2, 2,15 V V IC = 18, m, VCE = VGE, VGEth 5, 5,8 6,5 V VGE = -15 V... +15 V QG 4,3 µc RGint 1,7 Ω f = 1 MHz,, VCE = 25 V, VGE = V Cies 32, nf f = 1 MHz,, VCE = 25 V, VGE = V Cres 1,5 nf VCE = 12 V, VGE = V, ICES 5, m VCE = V, VGE = 2 V, IGES 4 n IC = 45, VCE = 6 V RGon = 1,6 Ω td on,25,3 上升时间 ( 电感负载 ) Risetime,inductiveload IC = 45, VCE = 6 V RGon = 1,6 Ω tr,9,1 关断延迟时间 ( 电感负载 ) Turn-offdelaytime,inductiveload IC = 45, VCE = 6 V RGoff = 1,6 Ω td off,55,65 下降时间 ( 电感负载 ) Falltime,inductiveload IC = 45, VCE = 6 V RGoff = 1,6 Ω tf,13,16 开通损耗能量 ( 每脉冲 ) Turn-onenergylossperpulse IC = 45, VCE = 6 V, LS = 8 nh RGon = 1,6 Ω Eon 33, 关断损耗能量 ( 每脉冲 ) Turn-offenergylossperpulse IC = 45, VCE = 6 V, LS = 8 nh RGoff = 1,6 Ω Eoff 65, 短路数据 SCdata 结 - 外壳热阻 Thermalresistance,junctiontocase 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 在开关状态下温度 Temperatureunderswitchingconditions VGE 15 V, VCC = 9 V VCEmax = VCES -LsCE di/dt tp 1, ISC 18 每个 IGBT/perIGBT RthJC,6 K/W 每个 IGBT/perIGBT λpaste=1w/(m K)/λgrease=1W/(m K) RthCH,48 K/W Tvj op -4 125 C dateofpublication:213-1-2 1
FS45R12KE3 二极管, 逆变器 /Diode,Inverter 最大额定值 /MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent I2t- 值 I²t-value VRRM 12 V IF 45 tp = 1 ms IFRM 9 VR = V, tp = 1 ms, I²t 35 ²s 特征值 /CharacteristicValues min. typ. max. 正向电压 Forwardvoltage 反向恢复峰值电流 Peakreverserecoverycurrent IF = 45, VGE = V IF = 45, VGE = V IF = 45, - dif/dt = 52 / (Tvj=125 C) VR = 6 V VGE = -15 V VF IRM 1,65 1,65 315 45 2,15 V V 恢复电荷 Recoveredcharge IF = 45, - dif/dt = 52 / (Tvj=125 C) VR = 6 V VGE = -15 V Qr 45, 85, µc µc 反向恢复损耗 ( 每脉冲 ) Reverserecoveryenergy IF = 45, - dif/dt = 52 / (Tvj=125 C) VR = 6 V VGE = -15 V Erec 21, 39, 结 - 外壳热阻 Thermalresistance,junctiontocase 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 在开关状态下温度 Temperatureunderswitchingconditions 每个二极管 /perdiode RthJC,1 K/W 每个二极管 /perdiode λpaste=1w/(m K)/λgrease=1W/(m K) RthCH,8 K/W Tvj op -4 125 C 负温度系数热敏电阻 /NTC-Thermistor 特征值 /CharacteristicValues min. typ. max. 额定电阻值 Ratedresistance R1 偏差 DeviationofR1 耗散功率 Powerdissipation B- 值 B-value B- 值 B-value B- 值 B-value 根据应用手册标定 Specificationaccordingtothevalidapplicationnote. TC = 25 C R25 5, kω TC = 1 C, R1 = 493 Ω R/R -5 5 % TC = 25 C P25 2, mw R2 = R25 exp [B25/5(1/T2-1/(298,15 K))] B25/5 3375 K R2 = R25 exp [B25/8(1/T2-1/(298,15 K))] B25/8 t.b.d. K R2 = R25 exp [B25/1(1/T2-1/(298,15 K))] B25/1 t.b.d. K dateofpublication:213-1-2 2
FS45R12KE3 模块 /Module 绝缘测试电压 Isolationtestvoltage 内部绝缘 Internalisolation 爬电距离 Creepagedistance 电气间隙 Clearance 相对电痕指数 Comperativetrackingindex 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 杂散电感, 模块 Strayinductancemodule 模块引线电阻, 端子 - 芯片 Moduleleadresistance,terminals-chip 储存温度 Storagetemperature 模块安装的安装扭距 Mountingtorqueformodulmounting 端子联接扭距 Terminalconnectiontorque 重量 Weight RMS, f = 5 Hz, t = 1 min VISOL 2,5 kv 基本绝缘 (class1,iec6114) basicinsulation(class1,iec6114) 端子 - 散热片 /terminaltoheatsink 端子 - 端子 /terminaltoterminal 端子 - 散热片 /terminaltoheatsink 端子 - 端子 /terminaltoterminal l2o3 CTI > 225 每个模块 /permodule λpaste=1w/(m K)/λgrease=1W/(m K) 14,5 1, min. typ. max. mm mm RthCH,5 K/W LsCE 2 nh TC=25 C, 每个开关 /perswitch RCC'+EE' 1,1 mω Tstg -4 125 C 螺丝 M5 根据相应的应用手册进行安装 ScrewM5-Mountingaccordingtovalidapplicationnote 螺丝 M6 根据相应的应用手册进行安装 ScrewM6-Mountingaccordingtovalidapplicationnote M 3, - 6, Nm M 3, - 6, Nm G 91 g dateofpublication:213-1-2 3
FS45R12KE3 输出特性 IGBT, 逆变器 ( 典型 ) outputcharacteristicigbt,inverter(typical) IC=f(VCE) VGE=15V 输出特性 IGBT, 逆变器 ( 典型 ) outputcharacteristicigbt,inverter(typical) IC=f(VCE) Tvj=125 C 9 75 9 75 VGE = 19V VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V 6 6 IC [] 45 IC [] 45 3 3 15 15,,5 1, 1,5 2, 2,5 3, 3,5 VCE [V],,5 1, 1,5 2, 2,5 3, 3,5 4, 4,5 5, VCE [V] 传输特性 IGBT, 逆变器 ( 典型 ) transfercharacteristicigbt,inverter(typical) IC=f(VGE) VCE=2V 开关损耗 IGBT, 逆变器 ( 典型 ) switchinglossesigbt,inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=±15V,RGon=1.6Ω,RGoff=1.6Ω,VCE=6V 9 75 14 12 Eon, Eoff, 6 1 8 IC [] 45 E [] 6 3 4 15 2 5 6 7 8 9 1 11 12 VGE [V] 15 3 45 6 75 9 IC [] dateofpublication:213-1-2 4
FS45R12KE3 开关损耗 IGBT, 逆变器 ( 典型 ) switchinglossesigbt,inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=±15V,IC=45,VCE=6V 瞬态热阻抗 IGBT, 逆变器 transientthermalimpedanceigbt,inverter ZthJC=f(t) 18 16 Eon, Eoff,,1 ZthJC : IGBT 14 12 E [] 1 8 ZthJC [K/W],1 6 4 2 2 4 6 8 1 12 14 16 RG [Ω] i: ri[k/w]: τi[s]: 1,36,1 2,198,2 3,192,5 4,174,1,1,1,1,1 1 1 t [s] 反偏安全工作区 IGBT, 逆变器 (RBSO) reversebiassafeoperatingareaigbt,inverter(rbso) IC=f(VCE) VGE=±15V,RGoff=1.6Ω,Tvj=125 C 正向偏压特性 二极管, 逆变器 ( 典型 ) forwardcharacteristicofdiode,inverter(typical) IF=f(VF) 1 9 IC, Modul IC, Chip 9 8 75 7 6 6 IC [] 5 IF [] 45 4 3 3 2 15 1 2 4 6 8 1 12 14 VCE [V],,2,4,6,8 1, 1,2 1,4 1,6 1,8 2, 2,2 2,4 VF [V] dateofpublication:213-1-2 5
FS45R12KE3 开关损耗 二极管, 逆变器 ( 典型 ) switchinglossesdiode,inverter(typical) Erec=f(IF) RGon=1.6Ω,VCE=6V 开关损耗 二极管, 逆变器 ( 典型 ) switchinglossesdiode,inverter(typical) Erec=f(RG) IF=45,VCE=6V 5 45 Erec, 5 45 Erec, 4 4 35 35 3 3 E [] 25 E [] 25 2 2 15 15 1 1 5 5 15 3 45 6 75 9 IF [] 2 4 6 8 1 12 14 16 18 RG [Ω] 瞬态热阻抗 二极管, 逆变器 transientthermalimpedancediode,inverter ZthJC=f(t) 负温度系数热敏电阻 温度特性 NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) 1 ZthJC : Diode 1 Rtyp,1 1 ZthJC [K/W] R[Ω],1 1 i: ri[k/w]: τi[s]: 1,6,1 2,33,2 3,32,5 4,29,1,1,1,1,1 1 1 t [s] 1 2 4 6 8 1 12 14 16 TC [ C] dateofpublication:213-1-2 6
FS45R12KE3 接线图 /circuit_diagram_headline J 封装尺寸 /packageoutlines In fin e o n dateofpublication:213-1-2 7
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