数据表 / Datasheet FP35R12W2T4_B11

EasyPIM 2BModulPressFITmitTrench/FeldstoppIGBT4undEmitterControlled4Diode EasyPIM 2BmodulePressFITwithtrench/fieldstopIGBT4andEmitterControlled4Diode IGBT, 逆变器 /IGBT,Inverter 最大额定值 /MaximumRatedalues 集电极 - 发射极电压 Collector-emittervoltage 连续集电极直流电流 ContinuousDCcollectorcurrent 集电极重复峰值电流 Repetitivepeakcollectorcurrent 总功率损耗 Totalpowerdissipation 栅极 - 发射极峰值电压 Gate-emitterpeakvoltage CES 12 TC = C, Tvj max = 17 C TC = 2 C, Tvj max = 17 C IC nom tp = 1 ms ICRM 7 TC = 2 C, Tvj max = 17 C Ptot 21 W GES +/-2 特征值 /Characteristicalues min. typ. max. 集电极 - 发射极饱和电压 Collector-emittersaturationvoltage 栅极阈值电压 Gatethresholdvoltage 栅极电荷 Gatecharge 内部栅极电阻 Internalgateresistor 输入电容 Inputcapacitance 反向传输电容 Reversetransfercapacitance 集电极 - 发射极截止电流 Collector-emittercut-offcurrent 栅极 - 发射极漏电流 Gate-emitterleakagecurrent 开通延迟时间 ( 电感负载 ) Turn-ondelaytime,inductiveload 上升时间 ( 电感负载 ) Risetime,inductiveload 关断延迟时间 ( 电感负载 ) Turn-offdelaytime,inductiveload 下降时间 ( 电感负载 ) Falltime,inductiveload 开通损耗能量 ( 每脉冲 ) Turn-onenergylossperpulse 关断损耗能量 ( 每脉冲 ) Turn-offenergylossperpulse 短路数据 SCdata 结 - 外壳热阻 Thermalresistance,junctiontocase 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 在开关状态下温度 Temperatureunderswitchingconditions IC =, GE = 1 IC =, GE = 1 IC =, GE = 1 IC CE sat 4 1,8 2,1 2,2 2,2 IC = 1,2 m, CE = GE, GEth,2,8 6,4 GE = -1... +1 QG,27 RGint, Ω f = 1 MHz,, CE = 2, GE = Cies 2, nf f = 1 MHz,, CE = 2, GE = Cres,7 nf CE = 12, GE =, ICES 1, m CE =, GE = 2, IGES 4 n IC =, CE = 6 RGon = 12 Ω IC =, CE = 6 RGon = 12 Ω IC =, CE = 6 RGoff = 12 Ω IC =, CE = 6 RGoff = 12 Ω IC =, CE = 6, LS = nh, di/dt = 2 / () RGon = 12 Ω IC =, CE = 6, LS = nh, du/dt = 36 / () RGoff = 12 Ω GE 1, CC = 8 CEmax = CES -LsCE di/dt tp, td on tr td off tf Eon Eoff,2,2,2,13,16,18,24,29,31,11,17,2 1,9 2,9 3,1 2, 2,9 3,2 每个 IGBT/perIGBT RthJC,6,7 K/W 每个 IGBT/perIGBT λpaste=1w/(m K)/λgrease=1W/(m K) ISC 13 RthCH,6 K/W Tvj op -4 1 C 1

二极管, 逆变器 /Diode,Inverter 最大额定值 /MaximumRatedalues 反向重复峰值电压 Repetitivepeakreversevoltage 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent I2t- 值 I²t-value RRM 12 IF tp = 1 ms IFRM 7 R =, tp = ms, R =, tp = ms, 特征值 /Characteristicalues min. typ. max. 正向电压 Forwardvoltage 反向恢复峰值电流 Peakreverserecoverycurrent 恢复电荷 Recoveredcharge 反向恢复损耗 ( 每脉冲 ) Reverserecoveryenergy 结 - 外壳热阻 Thermalresistance,junctiontocase 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 在开关状态下温度 Temperatureunderswitchingconditions IF =, GE = IF =, GE = IF =, GE = IF =, - dif/dt = 2 / (Tvj=1 C) R = 6 GE = -1 IF =, - dif/dt = 2 / (Tvj=1 C) R = 6 GE = -1 IF =, - dif/dt = 2 / (Tvj=1 C) R = 6 GE = -1 I²t F IRM Qr Erec 24 22 1,6 1,6 1,6 81, 8, 88, 3,9 6,8 7, 1, 2,7 2,9 ²s ²s 2,1 每个二极管 /perdiode RthJC,8,9 K/W 每个二极管 /perdiode λpaste=1w/(m K)/λgrease=1W/(m K) RthCH,7 K/W Tvj op -4 1 C 二极管, 整流器 /Diode,Rectifier 最大额定值 /MaximumRatedalues 反向重复峰值电压 Repetitivepeakreversevoltage 最大正向均方根电流 ( 每芯片 ) MaximumRMSforwardcurrentperchip 最大整流器输出均方根电流 MaximumRMScurrentatrectifieroutput 正向浪涌电流 Surgeforwardcurrent I2t- 值 I²t-value RRM 16 TC = C IFRMSM TC = C IRMSM tp = ms, tp = ms, tp = ms, tp = ms, 特征值 /Characteristicalues min. typ. max. 正向电压 Forwardvoltage 反向电流 Reversecurrent 结 - 外壳热阻 Thermalresistance,junctiontocase 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 在开关状态下温度 Temperatureunderswitchingconditions IFSM I²t 4 37 68, IF = F,9 ²s ²s, R = 16 IR 1, m 每个二极管 /perdiode RthJC 1, 1,1 K/W 每个二极管 /perdiode λpaste=1w/(m K)/λgrease=1W/(m K) RthCH,9 K/W Tvj op C 2

IGBT, 制动 - 斩波器 /IGBT,Brake-Chopper 最大额定值 /MaximumRatedalues 集电极 - 发射极电压 Collector-emittervoltage 连续集电极直流电流 ContinuousDCcollectorcurrent 集电极重复峰值电流 Repetitivepeakcollectorcurrent 总功率损耗 Totalpowerdissipation 栅极 - 发射极峰值电压 Gate-emitterpeakvoltage CES 12 TC = C, Tvj max = 17 C TC = 2 C, Tvj max = 17 C IC nom tp = 1 ms ICRM 7 TC = 2 C, Tvj max = 17 C Ptot 21 W GES +/-2 特征值 /Characteristicalues min. typ. max. 集电极 - 发射极饱和电压 Collector-emittersaturationvoltage 栅极阈值电压 Gatethresholdvoltage 栅极电荷 Gatecharge 内部栅极电阻 Internalgateresistor 输入电容 Inputcapacitance 反向传输电容 Reversetransfercapacitance 集电极 - 发射极截止电流 Collector-emittercut-offcurrent 栅极 - 发射极漏电流 Gate-emitterleakagecurrent 开通延迟时间 ( 电感负载 ) Turn-ondelaytime,inductiveload 上升时间 ( 电感负载 ) Risetime,inductiveload 关断延迟时间 ( 电感负载 ) Turn-offdelaytime,inductiveload 下降时间 ( 电感负载 ) Falltime,inductiveload 开通损耗能量 ( 每脉冲 ) Turn-onenergylossperpulse 关断损耗能量 ( 每脉冲 ) Turn-offenergylossperpulse 短路数据 SCdata 结 - 外壳热阻 Thermalresistance,junctiontocase 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 在开关状态下温度 Temperatureunderswitchingconditions IC =, GE = 1 IC =, GE = 1 IC =, GE = 1 IC CE sat 4 1,8 2,1 2,2 2,2 IC = 1,2 m, CE = GE, GEth,2,8 6,4 GE = -1... +1 QG,27 RGint, Ω f = 1 MHz,, CE = 2, GE = Cies 2, nf f = 1 MHz,, CE = 2, GE = Cres,7 nf CE = 12, GE =, ICES 1, m CE =, GE = 2, IGES 4 n IC =, CE = 6 RGon = 47 Ω IC =, CE = 6 RGon = 47 Ω IC =, CE = 6 RGoff = 47 Ω IC =, CE = 6 RGoff = 47 Ω IC =, CE = 6, LS = t.b.d. nh RGon = 47 Ω IC =, CE = 6, LS = t.b.d. nh RGoff = 47 Ω GE 1, CC = 8 CEmax = CES -LsCE di/dt tp, td on tr td off tf Eon Eoff,7,7,7,4,,7,28,44,4,11,17,2, 6, 7, 2, 3, 3, 每个 IGBT/perIGBT RthJC,6,7 K/W 每个 IGBT/perIGBT λpaste=1w/(m K)/λgrease=1W/(m K) ISC 13 RthCH,6 K/W Tvj op -4 1 C 3

二极管, 制动 - 斩波器 /Diode,Brake-Chopper 最大额定值 /MaximumRatedalues 反向重复峰值电压 Repetitivepeakreversevoltage 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent I2t- 值 I²t-value RRM 12 IF tp = 1 ms IFRM 2 R =, tp = ms, R =, tp = ms, 特征值 /Characteristicalues min. typ. max. 正向电压 Forwardvoltage 反向恢复峰值电流 Peakreverserecoverycurrent 恢复电荷 Recoveredcharge 反向恢复损耗 ( 每脉冲 ) Reverserecoveryenergy 结 - 外壳热阻 Thermalresistance,junctiontocase 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 在开关状态下温度 Temperatureunderswitchingconditions IF =, GE = IF =, GE = IF =, GE = IF =, - dif/dt = / (Tvj=1 C) R = 6 IRM IF =, - dif/dt = / (Tvj=1 C) R = 6 Qr IF =, - dif/dt = / (Tvj=1 C) R = 6 Erec I²t F 16, 14, 1,7 1,7 1,7 12,, 8,,9 1,7 1,9,24,2,9 ²s ²s 2,2 每个二极管 /perdiode RthJC 1,7 1,9 K/W 每个二极管 /perdiode λpaste=1w/(m K)/λgrease=1W/(m K) RthCH 1,3 K/W Tvj op -4 1 C 负温度系数热敏电阻 /NTC-Thermistor 特征值 /Characteristicalues min. typ. max. 额定电阻值 Ratedresistance R 偏差 DeviationofR 耗散功率 Powerdissipation B- 值 B-value B- 值 B-value B- 值 B-value 根据应用手册标定 Specificationaccordingtothevalidapplicationnote. TC = 2 C R2, kω TC = C, R = 493 Ω R/R - % TC = 2 C P2 2, mw R2 = R2 exp [B2/(1/T2-1/(298,1 K))] B2/ 337 K R2 = R2 exp [B2/8(1/T2-1/(298,1 K))] B2/8 3411 K R2 = R2 exp [B2/(1/T2-1/(298,1 K))] B2/ 3433 K 4

模块 /Module 绝缘测试电压 Isolationtestvoltage 内部绝缘 Internalisolation 爬电距离 Creepagedistance 电气间隙 Clearance 相对电痕指数 Comperativetrackingindex 杂散电感, 模块 Strayinductancemodule 模块引线电阻, 端子 - 芯片 Moduleleadresistance,terminals-chip 储存温度 Storagetemperature npresskraft für mech. Bef. pro Feder mountig force per clamp 重量 Weight RMS, f = Hz, t = 1 min. ISOL 2, k 基本绝缘 (class1,iec6114) basicinsulation(class1,iec6114) 端子 - 散热片 /terminaltoheatsink 端子 - 端子 /terminaltoterminal 端子 - 散热片 /terminaltoheatsink 端子 - 端子 /terminaltoterminal l2o3 CTI > 2 11, 6,3,, min. typ. max. mm mm LsCE 3 nh TC=2 C, 每个开关 /perswitch RCC'+EE' R'+CC', 6, Tstg -4 12 C F 4-8 N G 39 g mω Der Strom im Dauerbetrieb ist auf 2 effektiv pro nschlusspin begrenzt. The current under continuous operation is limited to 2 rms per connector pin.

输出特性 IGBT, 逆变器 ( 典型 ) outputcharacteristicigbt,inverter(typical) IC=f(CE) GE=1 输出特性 IGBT, 逆变器 ( 典型 ) outputcharacteristicigbt,inverter(typical) IC=f(CE) Tvj=1 C 7 6 6 7 6 6 GE = 19 GE = 17 GE = 1 GE = 13 GE = 11 GE = 9 4 4 4 4 IC [] 3 IC [] 3 2 2 2 2 1 1,, 1, 1, 2, 2, 3, 3, 4, CE [], 1, 2, 3, 4,, CE [] 传输特性 IGBT, 逆变器 ( 典型 ) transfercharacteristicigbt,inverter(typical) IC=f(GE) CE=2 开关损耗 IGBT, 逆变器 ( 典型 ) switchinglossesigbt,inverter(typical) Eon=f(IC),Eoff=f(IC) GE=±1,RGon=12Ω,RGoff=12Ω,CE=6 7 6 6, 9, 8, Eon, Eoff, Eon, Eoff, 4 4 7, 6, IC [] 3 2 2 E [], 4, 3, 1 2, 1, 6 7 8 9 11 12 13 GE [], 2 3 4 6 7 IC [] 6

开关损耗 IGBT, 逆变器 ( 典型 ) switchinglossesigbt,inverter(typical) Eon=f(RG),Eoff=f(RG) GE=±1,IC=,CE=6 瞬态热阻抗 IGBT, 逆变器 transientthermalimpedanceigbt,inverter ZthJH=f(t) 14 12 Eon, Eoff, Eon, Eoff, ZthJH : IGBT 1 E [] 8 6 ZthJH [K/W] 4,1 2 2 4 6 8 12 14 RG [Ω] i: ri[k/w]: τi[s]: 1,8, 2,1, 3,47, 4,37,2,1,1,1,1 1 t [s] 反偏安全工作区 IGBT, 逆变器 (RBSO) reversebiassafeoperatingareaigbt,inverter(rbso) IC=f(CE) GE=±1,RGoff=12Ω,Tvj=1 C 正向偏压特性 二极管, 逆变器 ( 典型 ) forwardcharacteristicofdiode,inverter(typical) IF=f(F) 77 7 63 IC, Modul IC, Chip 7 6 6 6 49 4 IC [] 42 IF [] 4 3 28 2 21 2 14 7 1 2 4 6 8 12 14 CE [],, 1, 1, 2, 2, F [] 7

开关损耗 二极管, 逆变器 ( 典型 ) switchinglossesdiode,inverter(typical) Erec=f(IF) RGon=12Ω,CE=6 开关损耗 二极管, 逆变器 ( 典型 ) switchinglossesdiode,inverter(typical) Erec=f(RG) IF=,CE=6, Erec, Erec, 4, 3, Erec, Erec, 4, 3, 3, 2, E [] E [] 2, 2, 1, 1, 1,,, 2 3 4 6 7 IF [], 2 4 6 8 12 14 RG [Ω] 瞬态热阻抗 二极管, 逆变器 transientthermalimpedancediode,inverter ZthJH=f(t) 正向偏压特性 二极管, 整流器 ( 典型 ) forwardcharacteristicofdiode,rectifier(typical) IF=f(F) ZthJH : Diode 7 6 6 4 ZthJH [K/W] 1 IF [] 4 3 2 2 1 i: ri[k/w]: τi[s]: 1,4, 2,237, 3,636, 4,73,2,1,1,1,1 1 t [s],2,4,6,8 1, 1,2 1,4 F [] 8

输出特性 IGBT, 制动 - 斩波器 ( 典型 ) outputcharacteristicigbt,brake-chopper(typical) IC=f(CE) GE=1 正向偏压特性 二极管, 制动 - 斩波器 ( 典型 ) forwardcharacteristicofdiode,brake-chopper(typical) IF=f(F) 7 6 6 2 18 16 4 4 14 12 IC [] 3 2 2 IF [] 8 6 1 4 2,, 1, 1, 2, 2, 3, 3, 4, CE [],, 1, 1, 2, 2, F [] 负温度系数热敏电阻 温度特性 NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) Rtyp R[Ω] 2 4 6 8 12 14 16 TC [ C] 9

接线图 /circuit_diagram_headline J 封装尺寸 /packageoutlines Infineon

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