FSRKS IGBT, 逆变器 /IGBT,Inverter 最大额定值 /MaximumRatedValues 集电极 - 发射极电压 Collector-emittervoltage 连续集电极直流电流 ContinuousDCcollectorcurrent 集电极重复峰值电流 Repetitivepeakcollectorcurrent 总功率损耗 Totalpowerdissipation 栅极 - 发射极峰值电压 Gate-emitterpeakvoltage VCES V TC = 7 C, Tvj max = C TC = C, Tvj max = C IC nom IC tp = ms ICRM TC = C, Tvj max = Ptot W VGES +/- V 特征值 /CharacteristicValues min. typ. max. 集电极 - 发射极饱和电压 Collector-emittersaturationvoltage 栅极阈值电压 Gatethresholdvoltage 栅极电荷 Gatecharge 内部栅极电阻 Internalgateresistor 输入电容 Inputcapacitance 反向传输电容 Reversetransfercapacitance 集电极 - 发射极截止电流 Collector-emittercut-offcurrent 栅极 - 发射极漏电流 Gate-emitterleakagecurrent 开通延迟时间 ( 电感负载 ) Turn-ondelaytime,inductiveload IC =, VGE = V IC =, VGE = V VCE sat,,8,7 V V IC =, m, VCE = VGE, VGEth,,, V VGE = - V... + V QG,8 µc RGint, Ω f = MHz,, VCE = V, VGE = V Cies, nf f = MHz,, VCE = V, VGE = V Cres, nf VCE = V, VGE = V, ICES, m VCE = V, VGE = V, IGES n IC =, VCE = V VGE = ± V RGon = 7, Ω td on,, 上升时间 ( 电感负载 ) Risetime,inductiveload IC =, VCE = V VGE = ± V RGon = 7, Ω tr,, 关断延迟时间 ( 电感负载 ) Turn-offdelaytime,inductiveload IC =, VCE = V VGE = ± V RGoff = 7, Ω td off,, 下降时间 ( 电感负载 ) Falltime,inductiveload IC =, VCE = V VGE = ± V RGoff = 7, Ω tf,, 开通损耗能量 ( 每脉冲 ) Turn-onenergylossperpulse IC =, VCE = V, LS = nh VGE = ± V RGon = 7, Ω Eon 9, 关断损耗能量 ( 每脉冲 ) Turn-offenergylossperpulse IC =, VCE = V, LS = nh VGE = ± V RGoff = 7, Ω Eoff,8 短路数据 SCdata 结 - 外壳热阻 Thermalresistance,junctiontocase 在开关状态下温度 Temperatureunderswitchingconditions VGE V, VCC = 9 V VCEmax = VCES -LsCE di/dt tp, 每个 IGBT/perIGBT RthJC, K/W Tvj op - C ISC dateofpublication:-- revision:.
FSRKS 二极管, 逆变器 /Diode,Inverter 最大额定值 /MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent It- 值 I²t-value VRRM V IF tp = ms IFRM VR = V, tp = ms, I²t ²s 特征值 /CharacteristicValues min. typ. max. 正向电压 Forwardvoltage 反向恢复峰值电流 Peakreverserecoverycurrent IF =, VGE = V IF =, VGE = V IF =, - dif/dt = 8 / (Tvj= C) VR = V VGE = - V VF IRM,,7, 9,, V V 恢复电荷 Recoveredcharge IF =, - dif/dt = 8 / (Tvj= C) VR = V VGE = - V Qr,, µc µc 反向恢复损耗 ( 每脉冲 ) Reverserecoveryenergy IF =, - dif/dt = 8 / (Tvj= C) VR = V VGE = - V Erec,8, 结 - 外壳热阻 Thermalresistance,junctiontocase 在开关状态下温度 Temperatureunderswitchingconditions 每个二极管 /perdiode RthJC, K/W Tvj op - C 模块 /Module 绝缘测试电压 Isolationtestvoltage 内部绝缘 Internalisolation 爬电距离 Creepagedistance 电气间隙 Clearance 相对电痕指数 Comperativetrackingindex 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 杂散电感, 模块 Strayinductancemodule 模块引线电阻, 端子 - 芯片 Moduleleadresistance,terminals-chip 储存温度 Storagetemperature 模块安装的安装扭距 Mountingtorqueformodulmounting 重量 Weight RMS, f = Hz, t = min VISOL, kv 基本绝缘 (class,iec) basicinsulation(class,iec) 端子 - 散热片 /terminaltoheatsink 端子 - 端子 /terminaltoterminal 端子 - 散热片 /terminaltoheatsink 端子 - 端子 /terminaltoterminal I CTI > 每个模块 /permodule λpaste=w/(m K)/λgrease=W/(m K), 7, min. typ. max. mm mm RthCH,9 K/W LsCE 8 nh TC= C, 每个开关 /perswitch RCC'+EE',8 mω Tstg - C 螺丝 M 根据相应的应用手册进行安装 ScrewM-Mountingaccordingtovalidapplicationnote M, -, Nm G g dateofpublication:-- revision:.
FSRKS 输出特性 IGBT, 逆变器 ( 典型 ) outputcharacteristicigbt,inverter(typical) IC=f(VCE) VGE=V 输出特性 IGBT, 逆变器 ( 典型 ) outputcharacteristicigbt,inverter(typical) IC=f(VCE) Tvj= C VGE = V VGE = V VGE = V VGE = V VGE = 9 V VGE = 8 V IC [] IC [],,,,,,,,,,,,, VCE [V],,,,,,,,,,,,, VCE [V] 传输特性 IGBT, 逆变器 ( 典型 ) transfercharacteristicigbt,inverter(typical) IC=f(VGE) VCE=V 开关损耗 IGBT, 逆变器 ( 典型 ) switchinglossesigbt,inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=±V,RGon=7.Ω,RGoff=7.Ω,VCE=V 7 Eon, Eoff, 8 IC [] E [] 9 7 8 9 VGE [V] IC [] dateofpublication:-- revision:.
FSRKS 开关损耗 IGBT, 逆变器 ( 典型 ) switchinglossesigbt,inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=±V,IC=,VCE=V 瞬态热阻抗 IGBT, 逆变器 transientthermalimpedanceigbt,inverter ZthJC=f(t) Eon, Eoff, ZthJC : IGBT E [] ZthJC [K/W],,,,,,,, 7, RG [Ω] i: ri[k/w]: τi[s]:,79,,8,,8,,7,,,,, t [s] 反偏安全工作区 IGBT, 逆变器 (RBSO) reversebiassafeoperatingareaigbt,inverter(rbso) IC=f(VCE) VGE=±V,RGoff=7.Ω,Tvj= C 正向偏压特性 二极管, 逆变器 ( 典型 ) forwardcharacteristicofdiode,inverter(typical) IF=f(VF) 8 IC, Modul IC, Chip IC [] 9 IF [] 8 VCE [V],,,,,,, VF [V] dateofpublication:-- revision:.
FSRKS 开关损耗 二极管, 逆变器 ( 典型 ) switchinglossesdiode,inverter(typical) Erec=f(IF) RGon=7.Ω,VCE=V 开关损耗 二极管, 逆变器 ( 典型 ) switchinglossesdiode,inverter(typical) Erec=f(RG) IF=,VCE=V 8 Erec, Erec, 7 E [] E [] IF [] RG [Ω] 瞬态热阻抗 二极管, 逆变器 transientthermalimpedancediode,inverter ZthJC=f(t) ZthJC : Diode ZthJC [K/W], i: ri[k/w]: τi[s]:,,,78,7,8,,88,87,,,, t [s] dateofpublication:-- revision:.
FSRKS 接线图 /circuit_diagram_headline 封装尺寸 /packageoutlines Infineon dateofpublication:-- revision:.
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