VCES = 2V IC nom = 3 / ICRM = 6 典型应用 Typicalpplications 电机传动 Motordrives 电气特性 ElectricalFeatures 低开关损耗 Lowswitchinglosses Tvjop=5 C Tvjop=5 C 机械特性 MechanicalFeatures 铜基板 Copperbaseplate ModuleLabelCode BarcodeCode28 DMX-Code ContentoftheCode ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) Digit -5 6-2-9 2-2 22-23
IGBT, 逆变器 /IGBT,Inverter 最大额定值 /MaximumRatedValues 集电极 - 发射极电压 Collector-emittervoltage 连续集电极直流电流 ContinuousDCcollectorcurrent 集电极重复峰值电流 Repetitivepeakcollectorcurrent 总功率损耗 Totalpowerdissipation 栅极 - 发射极峰值电压 Gate-emitterpeakvoltage VCES 2 V TC = 85 C, Tvj max = 75 C TC = 25 C, Tvj max = 75 C 2 IC nom IC 3 4 tp = ms ICRM 6 TC = 25 C, Tvj max = 75 C Ptot 45 W VGES +/-2 V 特征值 /CharacteristicValues min. typ. max. 集电极 - 发射极饱和电压 Collector-emittersaturationvoltage 栅极阈值电压 Gatethresholdvoltage 栅极电荷 Gatecharge 内部栅极电阻 Internalgateresistor 输入电容 Inputcapacitance 反向传输电容 Reversetransfercapacitance 集电极 - 发射极截止电流 Collector-emittercut-offcurrent 栅极 - 发射极漏电流 Gate-emitterleakagecurrent 开通延迟时间 ( 电感负载 ) Turn-ondelaytime,inductiveload 上升时间 ( 电感负载 ) Risetime,inductiveload 关断延迟时间 ( 电感负载 ) Turn-offdelaytime,inductiveload 下降时间 ( 电感负载 ) Falltime,inductiveload 开通损耗能量 ( 每脉冲 ) Turn-onenergylossperpulse 关断损耗能量 ( 每脉冲 ) Turn-offenergylossperpulse 短路数据 SCdata 结 - 外壳热阻 Thermalresistance,junctiontocase 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 在开关状态下温度 Temperatureunderswitchingconditions IC = 3, VGE = 5 V IC = 3, VGE = 5 V IC = 3, VGE = 5 V VCE sat,85 2,2 2,3 2,25 V V V IC = 9,95 m, VCE = VGE, VGEth 5,2 5,8 6,4 V VGE = -5 V... +5 V QG 2, µc RGint 2,4 Ω f = MHz,, VCE = 25 V, VGE = V Cies 6,5 nf f = MHz,, VCE = 25 V, VGE = V Cres,7 nf VCE = 2 V, VGE = V, ICES 5, m VCE = V, VGE = 2 V, IGES 4 n IC = 3, VCE = 6 V VGE = ±5 V RGon =,5 Ω IC = 3, VCE = 6 V VGE = ±5 V RGon =,5 Ω IC = 3, VCE = 6 V VGE = ±5 V RGoff =,5 Ω IC = 3, VCE = 6 V VGE = ±5 V RGoff =,5 Ω IC = 3, VCE = 6 V, LS = 25 nh VGE = ±5 V, di/dt = 83 / () RGon =,5 Ω IC = 3, VCE = 6 V, LS = 25 nh VGE = ±5 V, du/dt = 36 V/ () RGoff =,5 Ω VGE 5 V, VCC = 8 V VCEmax = VCES -LsCE di/dt tp, td on tr td off tf Eon Eoff ISC,4,5,5,3,3,4,32,39,4,5,8,9 4,5 25, 28, 8,5 28,5 32, 每个 IGBT/perIGBT RthJC,5 K/W 每个 IGBT/perIGBT λpaste=w/(m K)/λgrease=W/(m K) RthCH,7 K/W Tvj op -4 5 C
二极管, 逆变器 /Diode,Inverter 最大额定值 /MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent I2t- 值 I²t-value VRRM 2 V IF 3 tp = ms IFRM 6 VR = V, tp = ms, VR = V, tp = ms, I²t 45 25 特征值 /CharacteristicValues min. typ. max. 正向电压 Forwardvoltage 反向恢复峰值电流 Peakreverserecoverycurrent 恢复电荷 Recoveredcharge 反向恢复损耗 ( 每脉冲 ) Reverserecoveryenergy 结 - 外壳热阻 Thermalresistance,junctiontocase 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 在开关状态下温度 Temperatureunderswitchingconditions IF = 3, VGE = V IF = 3, VGE = V IF = 3, VGE = V IF = 3, - dif/dt = 83 / (Tvj=5 C) VR = 6 V VGE = -5 V IF = 3, - dif/dt = 83 / (Tvj=5 C) VR = 6 V VGE = -5 V IF = 3, - dif/dt = 83 / (Tvj=5 C) VR = 6 V VGE = -5 V VF IRM Qr Erec,65,65,65 34 38 39 3,5 55, 64, 3, 23,5 27, ²s ²s 2, V V V 每个二极管 /perdiode RthJC,46 K/W 每个二极管 /perdiode λpaste=w/(m K)/λgrease=W/(m K) µc µc µc RthCH,87 K/W Tvj op -4 5 C 3
模块 /Module 绝缘测试电压 Isolationtestvoltage 模块基板材料 Materialofmodulebaseplate 内部绝缘 Internalisolation 爬电距离 Creepagedistance 电气间隙 Clearance 相对电痕指数 Comperativetrackingindex 杂散电感, 模块 Strayinductancemodule 模块引线电阻, 端子 - 芯片 Moduleleadresistance,terminals-chip 储存温度 Storagetemperature 模块安装的安装扭距 Mountingtorqueformodulmounting 端子联接扭距 Terminalconnectiontorque 重量 Weight RMS, f = 5 Hz, t = min. VISOL 2,5 kv 基本绝缘 (class,iec64) basicinsulation(class,iec64) 端子至散热器 /terminaltoheatsink 端子至端子 /terminaltoterminal 端子至散热器 /terminaltoheatsink 端子至端子 /terminaltoterminal Cu l2o3 29, 23, 23,, CTI > 2 min. typ. max. mm mm LsCE 2 nh TC=25 C, 每个开关 /perswitch RCC'+EE',7 mω 螺丝 M6 根据相应的应用手册进行安装 ScrewM6-Mountingaccordingtovalidapplicationnote 螺丝 M6 根据相应的应用手册进行安装 ScrewM6-Mountingaccordingtovalidapplicationnote Tstg -4 25 C M 3, 6, Nm M 2,5-5, Nm G 285 g 4
输出特性 IGBT, 逆变器 ( 典型 ) outputcharacteristicigbt,inverter(typical) IC=f(VCE) VGE=5V 输出特性 IGBT, 逆变器 ( 典型 ) outputcharacteristicigbt,inverter(typical) IC=f(VCE) Tvj=5 C 6 5 6 5 VGE = 9V VGE = 7V VGE = 5V VGE = 3V VGE = V VGE = 9V 4 4 IC [] 3 IC [] 3 2 2,,5,,5 2, 2,5 3, 3,5 VCE [V],,5,,5 2, 2,5 3, 3,5 4, 4,5 5, VCE [V] 传输特性 IGBT, 逆变器 ( 典型 ) transfercharacteristicigbt,inverter(typical) IC=f(VGE) VCE=2V 开关损耗 IGBT, 逆变器 ( 典型 ) switchinglossesigbt,inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=±5V,RGon=.5Ω,RGoff=.5Ω,VCE=6V 6 5 2 Eon, Eon, Eoff, Eoff, 4 8 IC [] 3 E [] 6 2 4 2 5 6 7 8 9 2 3 VGE [V] 2 3 4 5 6 IC [] 5
开关损耗 IGBT, 逆变器 ( 典型 ) switchinglossesigbt,inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=±5V,IC=3,VCE=6V 瞬态热阻抗 IGBT, 逆变器 transientthermalimpedanceigbt,inverter ZthJC=f(t) 7 6 Eon, Eon, Eoff, Eoff, ZthJC : IGBT 5, E [] 4 3 ZthJC [K/W] 2, 2 3 4 5 6 RG [Ω] i: ri[k/w]: τi[s]:,7569,8725 2,6753866,345262 3,27878,2426927 4,9895664 2,27383,,,, t [s] 正向偏压特性 二极管, 逆变器 ( 典型 ) forwardcharacteristicofdiode,inverter(typical) IF=f(VF) 开关损耗 二极管, 逆变器 ( 典型 ) switchinglossesdiode,inverter(typical) Erec=f(IF) RGon=.5Ω,VCE=6V 6 5 35 3 Erec, Erec, 4 25 2 IF [] 3 E [] 5 2 5,,2,4,6,8,,2,4,6,8 2, 2,2 2,4 VF [V] 2 3 4 5 6 IF [] 6
开关损耗 二极管, 逆变器 ( 典型 ) switchinglossesdiode,inverter(typical) Erec=f(RG) IF=3,VCE=6V 瞬态热阻抗 二极管, 逆变器 transientthermalimpedancediode,inverter ZthJC=f(t) 35 Erec, Erec, ZthJC : Diode 3 25, E [] 2 5 ZthJC [K/W], 5,, 2, 3, 4, 5, 6, RG [Ω] i: ri[k/w]: τi[s]:,7,677 2,597,265 3,276,6 4,828,5,,,, t [s] 7
接线图 /Circuitdiagram 封装尺寸 /Packageoutlines mount ing dept h max. Einschraubt ief e max. 3,5,75 C 3x 29±,3 23±,3 Infineon mount ing depht min. 7mm Einst eckt ief e min. 7mm,4 CZ 2 4x 6 +,3-3,9±,5 3x 2±,2 3x Ø6,4±, 3x M6 4x 3,2±,2 C 4x 3,2±,2 4±,2 4±,2 4±,2 St ecker DIN46244-2.8-5- BZ Ø,5 B 4x 5 27 3±,3 48±,2 6,4±,3 4x 6,5 +,3 -, 3x Ø,8 B 28 28 93±,2 6,4±,3 B,3 B,3 8
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