IHM-B 模块 采用软特性的沟槽栅 IGBT IHM-Bmodulewithsoft-switchingTrench-IGBT4 / VCES = 7V IC nom = 2A / ICRM = A 典型应用 TypicalApplications 大功率变流器 HighPowerConverters 电机传动 MotorDrives 电气特性 ElectricalFeatures 提高工作结温 Tvjop ExtendedOperationTemperatureTvjop 低 VCEsat LowVCEsat Tvjop=5 C Tvjop=5 C 机械特性 MechanicalFeatures 4kV 交流 分钟 绝缘 4kVACminInsulation 封装的 CTI> PackagewithCTI> 高爬电距离和电气间隙 HighCreepageandClearanceDistances 高功率密度 HighPowerDensity IHMB 封装 IHMBHousing 铜基板 CopperBasePlate ModuleLabelCode BarcodeCode28 DMX-Code ContentoftheCode ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) Digit -5 6-2-9 2-2 22-23 ULapproved(E83335)
IGBT, 逆变器 /IGBT,Inverter 最大额定值 /MaximumRatedValues 集电极 - 发射极电压 Collector-emittervoltage 连续集电极直流电流 ContinuousDCcollectorcurrent 集电极重复峰值电流 Repetitivepeakcollectorcurrent 总损耗 Totalpowerdissipation 栅极 - 发射极峰值电压 Gate-emitterpeakvoltage VCES 7 V TC = C, Tvj = 75 C IC nom 2 A tp = ms ICRM A TC = 25 C, Tvj = 75 C Ptot 7,8 kw VGES +/-2 V 特征值 /CharacteristicValues min. typ. max. 集电极 - 发射极饱和电压 Collector-emittersaturationvoltage 栅极阈值电压 Gatethresholdvoltage 栅极电荷 Gatecharge 内部栅极电阻 Internalgateresistor 输入电容 Inputcapacitance 反向传输电容 Reversetransfercapacitance 集电极 - 发射极截止电流 Collector-emittercut-offcurrent 栅极 - 发射极漏电流 Gate-emitterleakagecurrent 开通延迟时间 ( 电感负载 ) Turn-ondelaytime,inductiveload 上升时间 ( 电感负载 ) Risetime,inductiveload 关断延迟时间 ( 电感负载 ) Turn-offdelaytime,inductiveload 下降时间 ( 电感负载 ) Falltime,inductiveload 开通损耗 ( 每脉冲 ) Turn-onenergylossperpulse 关断损耗 ( 每脉冲 ) Turn-offenergylossperpulse 短路数据 SCdata 结 - 壳热阻 Thermalresistance,junctiontocase 壳 - 散热器热阻 Thermalresistance,casetoheatsink IC = 2 A, VGE = 5 V IC = 2 A, VGE = 5 V IC = 2 A, VGE = 5 V Tvj = 5 C VCE sat,9 2,3 2,4 2,25 V V V IC = 48, ma, VCE = VGE, VGEth 5,2 5,8 6,4 V VGE = -5 V... +5 V QG 2,5 µc RGint,6 Ω f = MHz,, VCE = 25 V, VGE = V Cies 97, nf f = MHz,, VCE = 25 V, VGE = V Cres 3,2 nf VCE = 7 V, VGE = V, ICES 5, ma VCE = V, VGE = 2 V, IGES na IC = 2 A, VCE = 9 V VGE = ±5 V RGon =,62 Ω IC = 2 A, VCE = 9 V VGE = ±5 V RGon =,62 Ω IC = 2 A, VCE = 9 V VGE = ±5 V RGoff =,8 Ω IC = 2 A, VCE = 9 V VGE = ±5 V RGoff =,8 Ω IC = 2 A, VCE = 9 V, LS = 5 nh VGE = ±5 V, di/dt = 875 A/ (Tvj=5 C) RGon =,62 Ω IC = 2 A, VCE = 9 V, LS = 5 nh VGE = ±5 V, du/dt = 32 V/ (Tvj=5 C) RGoff =,8 Ω VGE 5 V, VCC = V VCEmax = VCES -LsCE di/dt Tvj = 5 C Tvj = 5 C Tvj = 5 C Tvj = 5 C Tvj = 5 C Tvj = 5 C tp, Tvj = 5 C td on tr td off tf Eon Eoff ISC,76,79,82,3,4,4,,2,25,35,52,56 265 365 375 32 45 44 5 每个 IGBT/perIGBT RthJC 9, K/kW 每个 IGBT/perIGBT λpaste=w/(m K)/λgrease=W/(m K) RthCH, K/kW A 2
二极管, 逆变器 /Diode,Inverter 最大额定值 /MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent I2t- 值 I²t-value 最大耗散功率 Maximumpowerdissipation 最小开通时间 Minimumturn-ontime VRRM 7 V IF 2 A tp = ms IFRM A VR = V, tp = ms, VR = V, tp = ms, Tvj = 5 C I²t 265 25 ka²s ka²s PRQM 2 kw ton min, 特征值 /CharacteristicValues min. typ. max. 正向电压 Forwardvoltage 反向恢复峰值电流 Peakreverserecoverycurrent 恢复电荷 Recoveredcharge 反向恢复损耗 ( 每脉冲 ) Reverserecoveryenergy 结 - 壳热阻 Thermalresistance,junctiontocase 壳 - 散热器热阻 Thermalresistance,casetoheatsink IF = 2 A, VGE = V IF = 2 A, VGE = V IF = 2 A, VGE = V IF = 2 A, - dif/dt = 875 A/ (Tvj=5 C) VR = 9 V VGE = -5 V IF = 2 A, - dif/dt = 875 A/ (Tvj=5 C) VR = 9 V VGE = -5 V IF = 2 A, - dif/dt = 875 A/ (Tvj=5 C) VR = 9 V VGE = -5 V Tvj = 5 C Tvj = 5 C Tvj = 5 C Tvj = 5 C VF IRM Qr Erec,8,9,95 35 55 55 35 5 56 75 35 35 2,2 V V V 每个二极管 /perdiode RthJC 32, K/kW 每个二极管 /perdiode λpaste=w/(m K)/λgrease=W/(m K) A A A µc µc µc RthCH, K/kW 3
模块 /Module 绝缘测试电压 Isolationtestvoltage 模块基板材料 Materialofmodulebaseplate 内部绝缘材料 Internalisolation 爬电距离 Creepagedistance 电气间隙 Clearance 相对电痕指数 Comperativetrackingindex 杂散电感, 模块 Strayinductancemodule 模块引线电阻, 端子 - 芯片 Moduleleadresistance,terminals-chip 最大结温 Maximumjunctiontemperature 在开关状态下温度 Temperatureunderswitchingconditions 储存温度 Storagetemperature 模块安装的安装扭距 Mountingtorqueformodulmounting 端子联接扭距 Terminalconnectiontorque 重量 Weight RMS, f = 5 Hz, t = min. VISOL 4, kv Cu 基本绝缘 (class,iec64) basicinsulation(class,iec64) 如何与取得联系 - 散热片 /terminaltoheatsink 如何与取得联系 - 如何与取得联系 /terminaltoterminal 如何与取得联系 - 散热片 /terminaltoheatsink 如何与取得联系 - 如何与取得联系 /terminaltoterminal Al2O3 32,2 32,2 9, 9, CTI > min. typ. max. mm mm LsCE 9, nh TC=25 C, 每个开关 /perswitch RCC'+EE',8 mω 逆变器, 制动 - 斩波器 /inverter,brake-chopper Tvj max 75 C 逆变器, 制动 - 斩波器 /inverter,brake-chopper Tvj op -4 5 C Tstg -4 5 C 螺丝 M6 根据相应的应用手册进行安装 ScrewM6-Mountingaccordingtovalidapplicationnote 螺丝 M8 根据相应的应用手册进行安装 ScrewM8-Mountingaccordingtovalidapplicationnote M 4,25-5,75 Nm G 3 g M,8 8, - - 2, Nm Nm 4
输出特性 IGBT, 逆变器 ( 典型 ) outputcharacteristicigbt,inverter(typical) IC=f(VCE) VGE=5V 输出特性 IGBT, 逆变器 ( 典型 ) outputcharacteristicigbt,inverter(typical) IC=f(VCE) Tvj=5 C Tvj = 5 C VGE = 2V VGE = 5V VGE = 2V VGE = V VGE = 9V VGE = 8V 6 6 2 2,,5,,5 2, 2,5 3, 3,5 4, VCE [V],,5,,5 2, 2,5 3, 3,5 4, 4,5 5, VCE [V] 传输特性 IGBT, 逆变器 ( 典型 ) transfercharacteristicigbt,inverter(typical) IC=f(VGE) VCE=2V 开关损耗 IGBT, 逆变器 ( 典型 ) switchinglossesigbt,inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=±5V,RGon=.62Ω,RGoff=.8Ω,VCE=9V Tvj = 5 C 9 Eon, Eon, Tvj = 5 C Eoff, Eoff, Tvj = 5 C 6 7 6 2 E [] 5 3 2 5 6 7 8 9 2 3 VGE [V] 2 6 5
开关损耗 IGBT, 逆变器 ( 典型 ) switchinglossesigbt,inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=±5V,IC=2A,VCE=9V 瞬态热阻抗 IGBT, 逆变器 transientthermalimpedanceigbt,inverter ZthJC=f(t) 3 2 Eon, Eon, Tvj = 5 C Eoff, Eoff, Tvj = 5 C ZthJC : IGBT E [] 9 7 ZthJC [K/W] 6 5 3 2,, 2, 3, 4, 5, 6, 7, 8, RG [Ω] i: ri[k/kw]: τi[s]:,546,6 2 5,3,42 3,787,226 4,489 4,,,,, t [s] 反偏安全工作区 IGBT, 逆变器 (RBSOA) reversebiassafeoperatingareaigbt,inverter(rbsoa) IC=f(VCE) VGE=±5V,RGoff=.8Ω,Tvj=5 C 正向偏压特性 二极管, 逆变器 ( 典型 ) forwardcharacteristicofdiode,inverter(typical) IF=f(VF) 2 IC, Modul IC, Chip 22 Tvj = 5 C 6 6 2 IF [A] 2 6 2 2 6 2 6 VCE [V],,5,,5 2, 2,5 3, VF [V] 6
开关损耗 二极管, 逆变器 ( 典型 ) switchinglossesdiode,inverter(typical) Erec=f(IF) RGon=.62Ω,VCE=9V 开关损耗 二极管, 逆变器 ( 典型 ) switchinglossesdiode,inverter(typical) Erec=f(RG) IF=2A,VCE=9V 6 Erec, Erec, Tvj = 5 C Erec, Erec, Tvj = 5 C 5 35 3 E [] E [] 25 3 2 2 5 2 6 IF [A],,6,2,8 2,4 3, 3,6 4,2 4,8 5,4 6, RG [Ω] 瞬态热阻抗 二极管, 逆变器 transientthermalimpedancediode,inverter ZthJC=f(t) 安全工作区 二极管, 逆变器 (SOA) safeoperationareadiode,inverter(soa) IR=f(VR) Tvj=5 C ZthJC : Diode 2 IR, Modul ZthJC [K/W] IR [A] 6 2 i: ri[k/kw]: τi[s]: 2,58,6 2 3,2,45 3 24,78,39 4 2,47,53,,,, t [s] 2 6 2 6 VR [V] 7
接线图 /circuit_diagram_headline 封装尺寸 /packageoutlines 8
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