62mmC-Series 模块 采用第四代高速沟槽栅 / 场终止 IGBT 和 HE 型发射极控制二极管 62mmC-SeriesmodulewithfastTrench/FieldstopIGBT4andEmitterControlledHEdiode / VCES = V IC nom = A / ICRM = A 典型应用 TypicalApplications 大功率变流器 Highpowerconverters 电机传动 Motordrives UPS 系统 UPSsystems 风力发电机 Windturbines 电气特性 ElectricalFeatures 提高工作结温 Tvjop ExtendedoperatingtemperatureTvjop 低开关损耗 Lowswitchinglosses 低 VCEsat LowVCEsat 无与伦比的坚固性 Unbeatablerobustness VCEsat 带正温度系数 VCEsatwithpositivetemperaturecoefficient 机械特性 MechanicalFeatures 4kV 交流 分钟 绝缘 4kVACmininsulation 封装的 CTI> PackagewithCTI> 高爬电距离和电气间隙 Highcreepageandclearancedistances 预涂导热介质 Pre-appliedThermalInterfaceMaterial ModuleLabelCode BarcodeCode28 DMX-Code ContentoftheCode ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) Digit -5 6-2-9 2-2 22-23 ULapproved(E83335)
IGBT, 逆变器 /IGBT,Inverter 最大额定值 /MaximumRatedValues 集电极 - 发射极电压 Collector-emittervoltage 连续集电极直流电流 ContinuousDCcollectorcurrent 集电极重复峰值电流 Repetitivepeakcollectorcurrent 栅极 - 发射极峰值电压 Gate-emitterpeakvoltage VCES V TH = 75 C, Tvj max = 75 C IC nom A tp = ms ICRM A VGES +/-2 V 特征值 /CharacteristicValues min. typ. max. 集电极 - 发射极饱和电压 Collector-emittersaturationvoltage 栅极阈值电压 Gatethresholdvoltage 栅极电荷 Gatecharge 内部栅极电阻 Internalgateresistor 输入电容 Inputcapacitance 反向传输电容 Reversetransfercapacitance 集电极 - 发射极截止电流 Collector-emittercut-offcurrent 栅极 - 发射极漏电流 Gate-emitterleakagecurrent 开通延迟时间 ( 电感负载 ) Turn-ondelaytime,inductiveload 上升时间 ( 电感负载 ) Risetime,inductiveload 关断延迟时间 ( 电感负载 ) Turn-offdelaytime,inductiveload 下降时间 ( 电感负载 ) Falltime,inductiveload 开通损耗能量 ( 每脉冲 ) Turn-onenergylossperpulse 关断损耗能量 ( 每脉冲 ) Turn-offenergylossperpulse 短路数据 SCdata??? Thermalresistance,junctiontoheatsink 在开关状态下温度 Temperatureunderswitchingconditions IC = A, VGE = 5 V IC = A, VGE = 5 V IC = A, VGE = 5 V Tvj = 5 C VCE sat,75 2,5 2, 2,5 V V V IC =,5 ma, VCE = VGE, VGEth 5,2 5,8 6,4 V VGE = -5 V... +5 V QG 2,4 µc RGint 2,5 Ω f = MHz,, VCE = 25 V, VGE = V Cies 9, nf f = MHz,, VCE = 25 V, VGE = V Cres,8 nf VCE = V, VGE = V, ICES 5, ma VCE = V, VGE = 2 V, IGES na IC = A, VCE = V VGE = ±5 V RGon =,8 Ω IC = A, VCE = V VGE = ±5 V RGon =,8 Ω IC = A, VCE = V VGE = ±5 V RGoff =,8 Ω IC = A, VCE = V VGE = ±5 V RGoff =,8 Ω Tvj = 5 C Tvj = 5 C Tvj = 5 C Tvj = 5 C IC = A, VCE = V, LS = 3 nh VGE = ±5 V, di/dt = A/ (Tvj = 5 C) RGon =,8 Ω Tvj = 5 C IC = A, VCE = V, LS = 3 nh VGE = ±5 V, du/dt = 4 V/ (Tvj = 5 C) RGoff =,8 Ω Tvj = 5 C VGE 5 V, VCC = 8 V VCEmax = VCES -LsCE di/dt tp, 每个 IGBT/perIGBT validwithifxpre-appliedthermalinterfacematerial td on tr td off tf Eon Eoff ISC RthJH,6,7,8,4,45,5,45,52,54,,6,8 6,5 25, 3, 9,5 29,5 32,5 A,2 K/W Tvj op -4 5 C 2
二极管, 逆变器 /Diode,Inverter 最大额定值 /MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent I2t- 值 I²t-value VRRM V IF A tp = ms IFRM A VR = V, tp = ms, VR = V, tp = ms, Tvj = 5 C I²t 9 8 特征值 /CharacteristicValues min. typ. max. 正向电压 Forwardvoltage 反向恢复峰值电流 Peakreverserecoverycurrent 恢复电荷 Recoveredcharge 反向恢复损耗 ( 每脉冲 ) Reverserecoveryenergy??? Thermalresistance,junctiontoheatsink 在开关状态下温度 Temperatureunderswitchingconditions IF = A, VGE = V IF = A, VGE = V IF = A, VGE = V IF = A, - dif/dt = A/ (Tvj=5 C) VR = V VGE = -5 V IF = A, - dif/dt = A/ (Tvj=5 C) VR = V VGE = -5 V IF = A, - dif/dt = A/ (Tvj=5 C) VR = V VGE = -5 V Tvj = 5 C Tvj = 5 C Tvj = 5 C Tvj = 5 C 每个二极管 /perdiode validwithifxpre-appliedthermalinterfacematerial VF IRM Qr Erec RthJH,65,65,65 35 38 39 3, 48, 67, 3, 23,5 26, A²s A²s 2,5 V V V A A A µc µc µc,67 K/W Tvj op -4 5 C 3
模块 /Module 绝缘测试电压 Isolationtestvoltage 模块基板材料 Materialofmodulebaseplate 内部绝缘 Internalisolation 爬电距离 Creepagedistance 电气间隙 Clearance 相对电痕指数 Comperativetrackingindex 杂散电感, 模块 Strayinductancemodule 模块引线电阻, 端子 - 芯片 Moduleleadresistance,terminals-chip 储存温度 Storagetemperature 最高基板工作温度 Maximumbaseplateoperationtemperature 模块安装的安装扭距 Mountingtorqueformodulmounting 端子联接扭距 Terminalconnectiontorque 重量 Weight RMS, f = 5 Hz, t = min. VISOL 4, kv 基本绝缘 (class,iec64) basicinsulation(class,iec64) 端子至散热器 /terminaltoheatsink 端子至端子 /terminaltoterminal 端子至散热器 /terminaltoheatsink 端子至端子 /terminaltoterminal Cu Al2O3 29, 23, 23,, CTI > min. typ. max. mm mm LsCE 2 nh TH=25 C, 每个开关 /perswitch RCC'+EE',7 mω 螺丝 M6 根据相应的应用手册进行安装 ScrewM6-Mountingaccordingtovalidapplicationnote 螺丝 M6 根据相应的应用手册进行安装 ScrewM6-Mountingaccordingtovalidapplicationnote Tstg -4 25 C TBPmax 25 C M 3, 6, Nm M 2,5-5, Nm G 34 g Lagerung und Transport von Modulen mit TIM => siehe AN Storage and shipment of modules with TIM => see AN 4
输出特性 IGBT, 逆变器 ( 典型 ) outputcharacteristicigbt,inverter(typical) IC=f(VCE) VGE=5V 输出特性 IGBT, 逆变器 ( 典型 ) outputcharacteristicigbt,inverter(typical) IC=f(VCE) Tvj=5 C Tvj = 5 C VGE = 9V VGE = 7V VGE = 5V VGE = 3V VGE = V VGE = 9V,,5,,5 2, 2,5 3, 3,5 VCE [V],,5,,5 2, 2,5 3, 3,5 4, 4,5 5, VCE [V] 传输特性 IGBT, 逆变器 ( 典型 ) transfercharacteristicigbt,inverter(typical) IC=f(VGE) VCE=2V 开关损耗 IGBT, 逆变器 ( 典型 ) switchinglossesigbt,inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=±5V,RGon=.8Ω,RGoff=.8Ω,VCE=V Tvj = 5 C 8 7 Eon, Eoff, Eon, Tvj = 5 C Eoff, Tvj = 5 C 6 5 E [] 4 3 2 5 6 7 8 9 2 3 VGE [V] 5
开关损耗 IGBT, 逆变器 ( 典型 ) switchinglossesigbt,inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=±5V,IC=A,VCE=V 瞬态热阻抗 IGBT, 逆变器 transientthermalimpedanceigbt,inverter ZthJH=f(t) 5 35 Eon, Eoff, Eon, Tvj = 5 C Eoff, Tvj = 5 C ZthJH : IGBT 2 5, 9 E [] 75 6 ZthJH [K/W] 45, 3 5 i: ri[k/w]: τi[s]:,72,35 2,259,85 3,687,852 4,92,682 2 4 6 8 2 4 6 8 RG [Ω],,,, t [s] 反偏安全工作区 IGBT, 逆变器 (RBSOA) reversebiassafeoperatingareaigbt,inverter(rbsoa) IC=f(VCE) VGE=±5V,RGoff=.8Ω,Tvj=5 C 正向偏压特性 二极管, 逆变器 ( 典型 ) forwardcharacteristicofdiode,inverter(typical) IF=f(VF) 7 IC, Modul IC, Chip Tvj = 5 C IF [A] 8 VCE [V],,2,4,6,8,,2,4,6,8 2, 2,2 2,4 VF [V] 6
开关损耗 二极管, 逆变器 ( 典型 ) switchinglossesdiode,inverter(typical) Erec=f(IF) RGon=.8Ω,VCE=V 开关损耗 二极管, 逆变器 ( 典型 ) switchinglossesdiode,inverter(typical) Erec=f(RG) IF=A,VCE=V 35 3 Erec, Erec, Tvj = 5 C 32 28 Erec, Erec, Tvj = 5 C 25 24 2 2 E [] 5 E [] 6 2 8 5 4 IF [A] 2 4 6 8 2 4 6 8 RG [Ω] 瞬态热阻抗 二极管, 逆变器 transientthermalimpedancediode,inverter ZthJH=f(t) ZthJH : Diode, ZthJH [K/W], i: ri[k/w]: τi[s]:,3,248 2,392,42 3,845,728 4,32,84,,,, t [s] 7
接线图 /Circuitdiagram 封装尺寸 /Packageoutlines In fin e o n 8
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