EconoDUL 3 模块 采用第四代沟槽栅 / 场终止 IGBT4 和 HE 型发射极控制二极管 带有温度检测 NTC EconoDUL 3modulewithTrench/FieldstopIGBT4andEmitterControlledHEdiodeandNTC VCES = 12V IC nom = / ICRM = 典型应用 Typicalpplications 电机传动 MotorDrives 伺服驱动器 ServoDrives UPS 系统 UPSSystems 风力发电机 WindTurbines 电气特性 ElectricalFeatures 低 VCEsat LowVCEsat Tvjop=15 C Tvjop=15 C 机械特性 MechanicalFeatures 标封装 StandardHousing ModuleLabelCode BarcodeCode128 DMX-Code ContentoftheCode ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) Digit 1-5 6-11 12-19 2-21 22-23 ULapproved(E83335) 1
IGBT, 逆变器 /IGBT,Inverter 最大额定值 /MaximumRatedValues 集电极 - 发射极电压 Collector-emittervoltage 连续集电极直流电流 ContinuousDCcollectorcurrent 集电极重复峰值电流 Repetitivepeakcollectorcurrent 总功率损耗 Totalpowerdissipation 栅极 - 发射极峰值电压 Gate-emitterpeakvoltage VCES 12 V TC = 1 C, Tvj max = 175 C TC = 25 C, Tvj max = 175 C IC nom IC 675 tp = 1 ms ICRM TC = 25 C, Tvj max = 175 C Ptot 225 W VGES +/-2 V 特征值 /CharacteristicValues min. typ. max. 集电极 - 发射极饱和电压 Collector-emittersaturationvoltage 栅极阈值电压 Gatethresholdvoltage 栅极电荷 Gatecharge 内部栅极电阻 Internalgateresistor 输入电容 Inputcapacitance 反向传输电容 Reversetransfercapacitance 集电极 - 发射极截止电流 Collector-emittercut-offcurrent 栅极 - 发射极漏电流 Gate-emitterleakagecurrent 开通延迟时间 ( 电感负载 ) Turn-ondelaytime,inductiveload 上升时间 ( 电感负载 ) Risetime,inductiveload 关断延迟时间 ( 电感负载 ) Turn-offdelaytime,inductiveload 下降时间 ( 电感负载 ) Falltime,inductiveload 开通损耗能量 ( 每脉冲 ) Turn-onenergylossperpulse 关断损耗能量 ( 每脉冲 ) Turn-offenergylossperpulse 短路数据 SCdata 结 - 外壳热阻 Thermalresistance,junctiontocase 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 在开关状态下温度 Temperatureunderswitchingconditions IC =, VGE = 15 V IC =, VGE = 15 V IC =, VGE = 15 V VCE sat 1,75 2, 2,5 2,1 V V V IC = 17, m, VCE = VGE, VGEth 5,2 5,8 6,4 V VGE = -15 V... +15 V QG 3,3 µc RGint 1,7 Ω f = 1 MHz,, VCE = 25 V, VGE = V Cies 28, nf f = 1 MHz,, VCE = 25 V, VGE = V Cres 1,55 nf VCE = 12 V, VGE = V, ICES 3, m VCE = V, VGE = 2 V, IGES 4 n IC =, VCE = V VGE = ±15 V RGon = 1,3 Ω IC =, VCE = V VGE = ±15 V RGon = 1,3 Ω IC =, VCE = V VGE = ±15 V RGoff = 1,3 Ω IC =, VCE = V VGE = ±15 V RGoff = 1,3 Ω IC =, VCE = V, LS = 35 nh VGE = ±15 V, di/dt = 7 / () RGon = 1,3 Ω IC =, VCE = V, LS = 35 nh VGE = ±15 V, du/dt = 31 V/ () RGoff = 1,3 Ω VGE 15 V, VCC = 8 V VCEmax = VCES -LsCE di/dt tp 1, td on tr td off tf Eon Eoff ISC,19,22,22,6,7,7,49,58,62,8,11,12 15, 26, 28,5 38, 55,5 61,5 18 每个 IGBT/perIGBT RthJC,66 K/W 每个 IGBT/perIGBT λpaste=1w/(m K)/λgrease=1W/(m K) RthCH,3 K/W Tvj op -4 15 C 2
二极管, 逆变器 /Diode,Inverter 最大额定值 /MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent I2t- 值 I²t-value VRRM 12 V IF tp = 1 ms IFRM VR = V, tp = 1 ms, VR = V, tp = 1 ms, I²t 35 285 特征值 /CharacteristicValues min. typ. max. 正向电压 Forwardvoltage 反向恢复峰值电流 Peakreverserecoverycurrent 恢复电荷 Recoveredcharge 反向恢复损耗 ( 每脉冲 ) Reverserecoveryenergy 结 - 外壳热阻 Thermalresistance,junctiontocase 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 在开关状态下温度 Temperatureunderswitchingconditions IF =, VGE = V IF =, VGE = V IF =, VGE = V IF =, - dif/dt = 7 / (Tvj=15 C) VR = V VGE = -15 V IF =, - dif/dt = 7 / (Tvj=15 C) VR = V VGE = -15 V IF =, - dif/dt = 7 / (Tvj=15 C) VR = V VGE = -15 V VF IRM Qr Erec 1,65 1,65 1,65 55 575 48, 92, 15 26,5 48,5 55, ²s ²s 2,1 V V V 每个二极管 /perdiode RthJC,1 K/W 每个二极管 /perdiode λpaste=1w/(m K)/λgrease=1W/(m K) µc µc µc RthCH,45 K/W Tvj op -4 15 C 负温度系数热敏电阻 /NTC-Thermistor 特征值 /CharacteristicValues min. typ. max. 额定电阻值 Ratedresistance R1 偏差 DeviationofR1 耗散功率 Powerdissipation B- 值 B-value B- 值 B-value B- 值 B-value 根据应用手册标定 Specificationaccordingtothevalidapplicationnote. TC = 25 C R25 5, kω TC = 1 C, R1 = 493 Ω R/R -5 5 % TC = 25 C P25 2, mw R2 = R25 exp [B25/5(1/T2-1/(298,15 K))] B25/5 3375 K R2 = R25 exp [B25/8(1/T2-1/(298,15 K))] B25/8 3411 K R2 = R25 exp [B25/1(1/T2-1/(298,15 K))] B25/1 3433 K 3
模块 /Module 绝缘测试电压 Isolationtestvoltage 模块基板材料 Materialofmodulebaseplate 内部绝缘 Internalisolation 爬电距离 Creepagedistance 电气间隙 Clearance 相对电痕指数 Comperativetrackingindex 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 杂散电感, 模块 Strayinductancemodule 模块引线电阻, 端子 - 芯片 Moduleleadresistance,terminals-chip 储存温度 Storagetemperature 模块安装的安装扭距 Mountingtorqueformodulmounting 端子联接扭距 Terminalconnectiontorque 重量 Weight RMS, f = 5 Hz, t = 1 min VISOL 2,5 kv Cu 基本绝缘 (class1,iec6114) basicinsulation(class1,iec6114) 端子 - 散热片 /terminaltoheatsink 端子 - 端子 /terminaltoterminal 端子 - 散热片 /terminaltoheatsink 端子 - 端子 /terminaltoterminal l2o3 14,5 13, 12,5 1, CTI > 2 每个模块 /permodule λpaste=1w/(m K)/λgrease=1W/(m K) min. typ. max. mm mm RthCH,9 K/W LsCE 2 nh TC=25 C, 每个开关 /perswitch RCC'+EE' 1,1 mω Tstg -4 125 C 螺丝 M5 根据相应的应用手册进行安装 ScrewM5-Mountingaccordingtovalidapplicationnote 螺丝 M6 根据相应的应用手册进行安装 ScrewM6-Mountingaccordingtovalidapplicationnote M 3, - 6, Nm M 3, - 6, Nm G 345 g 4
输出特性 IGBT, 逆变器 ( 典型 ) outputcharacteristicigbt,inverter(typical) IC=f(VCE) VGE=15V 输出特性 IGBT, 逆变器 ( 典型 ) outputcharacteristicigbt,inverter(typical) IC=f(VCE) Tvj=15 C 75 75 VGE = 19V VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V IC [] IC [] 15 15,,5 1, 1,5 2, 2,5 3, 3,5 VCE [V],,5 1, 1,5 2, 2,5 3, 3,5 4, 4,5 5, VCE [V] 传输特性 IGBT, 逆变器 ( 典型 ) transfercharacteristicigbt,inverter(typical) IC=f(VGE) VCE=2V 开关损耗 IGBT, 逆变器 ( 典型 ) switchinglossesigbt,inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=±15V,RGon=1.3Ω,RGoff=1.3Ω,VCE=V 75 14 12 Eon, Eon, Eoff, Eoff, 1 8 IC [] E [] 6 4 15 2 5 6 7 8 9 1 11 12 13 VGE [V] 15 75 IC [] 5
开关损耗 IGBT, 逆变器 ( 典型 ) switchinglossesigbt,inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=±15V,IC=,VCE=V 瞬态热阻抗 IGBT, 逆变器 transientthermalimpedanceigbt,inverter ZthJC=f(t) 22 2 18 Eon, Eon, Eoff, Eoff,,1 ZthJC : IGBT 16 14 E [] 12 1 ZthJC [K/W],1 8 6 4 2 2 4 6 8 1 12 14 16 RG [Ω] i: ri[k/w]: τi[s]: 1,396,1 2,2178,2 3,2112,5 4,1914,1,1,1,1,1 1 1 t [s] 反偏安全工作区 IGBT, 逆变器 (RBSO) reversebiassafeoperatingareaigbt,inverter(rbso) IC=f(VCE) VGE=±15V,RGoff=1.3Ω,Tvj=15 C 正向偏压特性 二极管, 逆变器 ( 典型 ) forwardcharacteristicofdiode,inverter(typical) IF=f(VF) 1 8 IC, Modul IC, Chip 75 7 IC [] 5 IF [] 4 2 15 1 2 4 8 1 12 14 VCE [V],,2,4,6,8 1, 1,2 1,4 1,6 1,8 2, 2,2 2,4 VF [V] 6
开关损耗 二极管, 逆变器 ( 典型 ) switchinglossesdiode,inverter(typical) Erec=f(IF) RGon=1.3Ω,VCE=V 开关损耗 二极管, 逆变器 ( 典型 ) switchinglossesdiode,inverter(typical) Erec=f(RG) IF=,VCE=V 8 7 Erec, Erec, 7 6 Erec, Erec, 6 5 5 4 E [] 4 3 E [] 3 2 2 1 1 15 75 IF [] 2 4 6 8 1 12 14 16 RG [Ω] 瞬态热阻抗 二极管, 逆变器 transientthermalimpedancediode,inverter ZthJC=f(t) 负温度系数热敏电阻 温度特性 NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) 1 ZthJC : Diode 1 Rtyp,1 1 ZthJC [K/W] R[Ω],1 1 i: ri[k/w]: τi[s]: 1,6,1 2,33,2 3,32,5 4,29,1,1,1,1,1 1 1 t [s] 1 2 4 6 8 1 12 14 16 TC [ C] 7
接线图 /circuit_diagram_headline 封装尺寸 /packageoutlines Infineon 8
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