EconoDUL 3ModulmitschnellemIGBTfürhochfrequentesSchalten EconoDUL 3modulewithfastIGBTforhighswitchingfrequency IGBT, 逆变器 /IGBT,Inverter 最大额定值 /MaximumRatedValues 集电极 - 发射极电压 Collector-emittervoltage 连续集电极直流电流 ContinuousDCcollectorcurrent 集电极重复峰值电流 Repetitivepeakcollectorcurrent 总功率损耗 Totalpowerdissipation 栅极 - 发射极峰值电压 Gate-emitterpeakvoltage VCES V TC = 6 C, Tvj max = 15 C TC = 5 C, Tvj max = 15 C IC nom IC 37 tp = 1 ms ICRM TC = 5 C, Tvj max = 15 Ptot 195 W VGES +/- V 特征值 /CharacteristicValues min. typ. max. 集电极 - 发射极饱和电压 Collector-emittersaturationvoltage 栅极阈值电压 Gatethresholdvoltage 栅极电荷 Gatecharge 内部栅极电阻 Internalgateresistor 输入电容 Inputcapacitance 反向传输电容 Reversetransfercapacitance 集电极 - 发射极截止电流 Collector-emittercut-offcurrent 栅极 - 发射极漏电流 Gate-emitterleakagecurrent 开通延迟时间 ( 电感负载 ) Turn-ondelaytime,inductiveload IC =, VGE = 15 V IC =, VGE = 15 V VCE sat 3, 3,85 3,75 V V IC = 1, m, VCE = VGE, VGEth,5 5,5 6,5 V VGE = -15 V... +15 V QG 3, µc RGint 1,7 Ω f = 1 MHz,, VCE = 5 V, VGE = V Cies, nf f = 1 MHz,, VCE = 5 V, VGE = V Cres 1, nf VCE = V, VGE = V, ICES 5, m VCE = V, VGE = V, IGES n IC =, VCE = V VGE = ±15 V RGon =,7 Ω td on,1,11 上升时间 ( 电感负载 ) Risetime,inductiveload IC =, VCE = V VGE = ±15 V RGon =,7 Ω tr,6,7 关断延迟时间 ( 电感负载 ) Turn-offdelaytime,inductiveload IC =, VCE = V VGE = ±15 V RGoff =,7 Ω td off,53,55 下降时间 ( 电感负载 ) Falltime,inductiveload IC =, VCE = V VGE = ±15 V RGoff =,7 Ω tf,3, 开通损耗能量 ( 每脉冲 ) Turn-onenergylossperpulse IC =, VCE = V, LS = 8 nh VGE = ±15 V, di/dt = 5 / RGon =,7 Ω Eon 17, 5, 关断损耗能量 ( 每脉冲 ) Turn-offenergylossperpulse IC =, VCE = V, LS = 8 nh VGE = ±15 V, du/dt = 6 V/ RGoff =,7 Ω Eoff 11, 15, 短路数据 SCdata 结 - 外壳热阻 Thermalresistance,junctiontocase 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 在开关状态下温度 Temperatureunderswitchingconditions VGE 15 V, VCC = 9 V VCEmax = VCES -LsCE di/dt tp 1, ISC 每个 IGBT/perIGBT RthJC,6 K/W 每个 IGBT/perIGBT λpaste=1w/(m K)/λgrease=1W/(m K) RthCH,3 K/W Tvj op - 15 C 1
二极管, 逆变器 /Diode,Inverter 最大额定值 /MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent It- 值 I²t-value VRRM V IF tp = 1 ms IFRM VR = V, tp = 1 ms, I²t ²s 特征值 /CharacteristicValues min. typ. max. 正向电压 Forwardvoltage 反向恢复峰值电流 Peakreverserecoverycurrent IF =, VGE = V IF =, VGE = V IF =, - dif/dt = 5 / (Tvj=15 C) VR = V VGE = -15 V VF IRM, 1,7 3,55 V V 恢复电荷 Recoveredcharge IF =, - dif/dt = 5 / (Tvj=15 C) VR = V VGE = -15 V Qr 18,, µc µc 反向恢复损耗 ( 每脉冲 ) Reverserecoveryenergy IF =, - dif/dt = 5 / (Tvj=15 C) VR = V VGE = -15 V Erec 7, 15, 结 - 外壳热阻 Thermalresistance,junctiontocase 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 在开关状态下温度 Temperatureunderswitchingconditions 每个二极管 /perdiode RthJC,1 K/W 每个二极管 /perdiode λpaste=1w/(m K)/λgrease=1W/(m K) RthCH,5 K/W Tvj op - 15 C 负温度系数热敏电阻 /NTC-Thermistor 特征值 /CharacteristicValues min. typ. max. 额定电阻值 Ratedresistance R 偏差 DeviationofR 耗散功率 Powerdissipation B- 值 B-value B- 值 B-value B- 值 B-value 根据应用手册标定 Specificationaccordingtothevalidapplicationnote. TC = 5 C R5 5, kω TC = C, R = 93 Ω R/R -5 5 % TC = 5 C P5, mw R = R5 exp [B5/5(1/T - 1/(98,15 K))] B5/5 3375 K R = R5 exp [B5/8(1/T - 1/(98,15 K))] B5/8 311 K R = R5 exp [B5/(1/T - 1/(98,15 K))] B5/ 333 K
模块 /Module 绝缘测试电压 Isolationtestvoltage 模块基板材料 Materialofmodulebaseplate 内部绝缘 Internalisolation 爬电距离 Creepagedistance 电气间隙 Clearance 相对电痕指数 Comperativetrackingindex 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 杂散电感, 模块 Strayinductancemodule 模块引线电阻, 端子 - 芯片 Moduleleadresistance,terminals-chip 储存温度 Storagetemperature 模块安装的安装扭距 Mountingtorqueformodulmounting 端子联接扭距 Terminalconnectiontorque 重量 Weight RMS, f = 5 Hz, t = 1 min. VISOL,5 kv Cu 基本绝缘 (class1,iec611) basicinsulation(class1,iec611) 端子 - 散热片 /terminaltoheatsink 端子 - 端子 /terminaltoterminal 端子 - 散热片 /terminaltoheatsink 端子 - 端子 /terminaltoterminal lo3 1,5 13, 1,5 1, CTI > 每个模块 /permodule λpaste=1w/(m K)/λgrease=1W/(m K) min. typ. max. mm mm RthCH,9 K/W LsCE nh TC=5 C, 每个开关 /perswitch RCC'+EE' 1,1 mω Tstg - 15 C 螺丝 M5 根据相应的应用手册进行安装 ScrewM5-Mountingaccordingtovalidapplicationnote 螺丝 M6 根据相应的应用手册进行安装 ScrewM6-Mountingaccordingtovalidapplicationnote M 3, - 6, Nm M 3, - 6, Nm G 35 g 3
输出特性 IGBT, 逆变器 ( 典型 ) outputcharacteristicigbt,inverter(typical) IC=f(VCE) VGE=15V 输出特性 IGBT, 逆变器 ( 典型 ) outputcharacteristicigbt,inverter(typical) IC=f(VCE) Tvj=15 C VGE =8V VGE =9V VGE =1V VGE =1V VGE =15V VGE =V IC [] IC [],,5 1, 1,5,,5 3, 3,5,,5 5, 5,5 6, VCE [V],,5 1, 1,5,,5 3, 3,5,,5 5, 5,5 6, VCE [V] 传输特性 IGBT, 逆变器 ( 典型 ) transfercharacteristicigbt,inverter(typical) IC=f(VGE) VCE=V 开关损耗 IGBT, 逆变器 ( 典型 ) switchinglossesigbt,inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=±15V,RGon=.7Ω,RGoff=.7Ω,VCE=V 7 6 Eon, Eoff, 5 IC [] E [] 3 1 5 6 7 8 9 1 11 1 VGE [V] IC []
开关损耗 IGBT, 逆变器 ( 典型 ) switchinglossesigbt,inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=±15V,IC=,VCE=V 瞬态热阻抗 IGBT, 逆变器 transientthermalimpedanceigbt,inverter ZthJC=f(t) 1 1 Eon, Eoff,,1 ZthJC : IGBT E [] 8 6 ZthJC [K/W],1 6 8 1 1 1 16 18 RG [Ω] i: ri[k/w]: τi[s]: 1,38,1,11, 3,8,5,1856,1,1,1,1,1 1 1 t [s] 反偏安全工作区 IGBT, 逆变器 (RBSO) reversebiassafeoperatingareaigbt,inverter(rbso) IC=f(VCE) VGE=±15V,RGoff=.7Ω,Tvj=15 C 正向偏压特性 二极管, 逆变器 ( 典型 ) forwardcharacteristicofdiode,inverter(typical) IF=f(VF) 7 IC, Modul IC, Chip IC [] IF [] 8 1 VCE [V],,,,6,8 1, 1, 1, 1,6 1,8,,,,6 VF [V] 5
开关损耗 二极管, 逆变器 ( 典型 ) switchinglossesdiode,inverter(typical) Erec=f(IF) RGon=.7Ω,VCE=V 开关损耗 二极管, 逆变器 ( 典型 ) switchinglossesdiode,inverter(typical) Erec=f(RG) IF=,VCE=V 18 Erec, 18 Erec, 16 16 1 1 1 1 E [] 1 E [] 1 8 8 6 6 IF [] 6 8 1 1 1 16 18 RG [Ω] 瞬态热阻抗 二极管, 逆变器 transientthermalimpedancediode,inverter ZthJC=f(t) 负温度系数热敏电阻 温度特性 NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) 1 ZthJC : Diode Rtyp,1 ZthJC [K/W] R[Ω],1 i: ri[k/w]: τi[s]: 1,6,1,33, 3,3,5,9,1,1,1,1,1 1 1 t [s] 6 8 1 1 16 TC [ C] 6
接线图 /circuit_diagram_headline 封装尺寸 /packageoutlines Infineon 7
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