62mmC-SerienModulmitTrench/FeldstopIGBT3undEmitterControlled3Diode 62mmC-seriesmodulewithtrench/fieldstopIGBT3andEmitterControlled3diode IGBT, 逆变器 /IGBT,Inverter 最大额定值 /MaximumRatedValues 集电极 - 发射极电压 Collector-emittervoltage 连续集电极直流电流 ContinuousDCcollectorcurrent 集电极重复峰值电流 Repetitivepeakcollectorcurrent 总功率损耗 Totalpowerdissipation 栅极 - 发射极峰值电压 Gate-emitterpeakvoltage VCES 7 V TC = 8 C, Tvj max = 5 C TC = 25 C, Tvj max = 5 C IC nom IC 44 tp = ms ICRM TC = 25 C, Tvj max = 5 Ptot 45 W VGES +/-2 V 特征值 /CharacteristicValues min. typ. max. 集电极 - 发射极饱和电压 Collector-emittersaturationvoltage 栅极阈值电压 Gatethresholdvoltage 栅极电荷 Gatecharge 内部栅极电阻 Internalgateresistor 输入电容 Inputcapacitance 反向传输电容 Reversetransfercapacitance 集电极 - 发射极截止电流 Collector-emittercut-offcurrent 栅极 - 发射极漏电流 Gate-emitterleakagecurrent 开通延迟时间 ( 电感负载 ) Turn-ondelaytime,inductiveload IC =, VGE = 5 V IC =, VGE = 5 V VCE sat 2, 2,4 2,45 V V IC = 2, m, VCE = VGE, VGEth 5,2 5,8 6,4 V VGE = -5 V... +5 V QG 3,5 µc RGint 2,5 Ω f = MHz,, VCE = 25 V, VGE = V Cies 27, nf f = MHz,, VCE = 25 V, VGE = V Cres,9 nf VCE = 7 V, VGE = V, ICES 3, m VCE = V, VGE = 2 V, IGES n IC =, VCE = 9 V VGE = ±5 V RGon = 4,7 Ω td on,28,3 上升时间 ( 电感负载 ) Risetime,inductiveload IC =, VCE = 9 V VGE = ±5 V RGon = 4,7 Ω tr,8, 关断延迟时间 ( 电感负载 ) Turn-offdelaytime,inductiveload IC =, VCE = 9 V VGE = ±5 V RGoff = 4,7 Ω td off,8, 下降时间 ( 电感负载 ) Falltime,inductiveload IC =, VCE = 9 V VGE = ±5 V RGoff = 4,7 Ω tf,2,2 开通损耗能量 ( 每脉冲 ) Turn-onenergylossperpulse IC =, VCE = 9 V, LS = 6 nh VGE = ±5 V, di/dt = 3 / RGon = 4,7 Ω Eon 7, 5 关断损耗能量 ( 每脉冲 ) Turn-offenergylossperpulse IC =, VCE = 9 V, LS = 6 nh VGE = ±5 V, du/dt = 3 V/ RGoff = 4,7 Ω Eoff 64, 94, 短路数据 SCdata 结 - 外壳热阻 Thermalresistance,junctiontocase 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 在开关状态下温度 Temperatureunderswitchingconditions VGE 5 V, VCC = V VCEmax = VCES -LsCE di/dt tp, ISC 每个 IGBT/perIGBT RthJC,85 K/W 每个 IGBT/perIGBT λpaste=w/(m K)/λgrease=W/(m K) RthCH,33 K/W Tvj op -4 25 C
二极管, 逆变器 /Diode,Inverter 最大额定值 /MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent I2t- 值 I²t-value VRRM 7 V IF tp = ms IFRM VR = V, tp = ms, I²t 4 ²s 特征值 /CharacteristicValues min. typ. max. 正向电压 Forwardvoltage 反向恢复峰值电流 Peakreverserecoverycurrent IF =, VGE = V IF =, VGE = V IF =, - dif/dt = 3 / (Tvj=25 C) VR = 9 V VGE = -5 V VF IRM,8,9 35 38 2,2 V V 恢复电荷 Recoveredcharge IF =, - dif/dt = 3 / (Tvj=25 C) VR = 9 V VGE = -5 V Qr 78, 3 µc µc 反向恢复损耗 ( 每脉冲 ) Reverserecoveryenergy IF =, - dif/dt = 3 / (Tvj=25 C) VR = 9 V VGE = -5 V Erec 4, 72, 结 - 外壳热阻 Thermalresistance,junctiontocase 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 在开关状态下温度 Temperatureunderswitchingconditions 每个二极管 /perdiode RthJC,3 K/W 每个二极管 /perdiode λpaste=w/(m K)/λgrease=W/(m K) RthCH,5 K/W Tvj op -4 25 C 2
模块 /Module 绝缘测试电压 Isolationtestvoltage 模块基板材料 Materialofmodulebaseplate 内部绝缘 Internalisolation 爬电距离 Creepagedistance 电气间隙 Clearance 相对电痕指数 Comperativetrackingindex 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 杂散电感, 模块 Strayinductancemodule 模块引线电阻, 端子 - 芯片 Moduleleadresistance,terminals-chip 储存温度 Storagetemperature 模块安装的安装扭距 Mountingtorqueformodulmounting 端子联接扭距 Terminalconnectiontorque 重量 Weight RMS, f = 5 Hz, t = min. VISOL 3,4 kv Cu 基本绝缘 (class,iec64) basicinsulation(class,iec64) 端子 - 散热片 /terminaltoheatsink 端子 - 端子 /terminaltoterminal 端子 - 散热片 /terminaltoheatsink 端子 - 端子 /terminaltoterminal l2o3 CTI > 每个模块 /permodule λpaste=w/(m K)/λgrease=W/(m K) 2,, min. typ. max. mm mm RthCH, K/W LsCE 2 nh TC=25 C, 每个开关 /perswitch RCC'+EE',6 mω Tstg -4 25 C 螺丝 M6 根据相应的应用手册进行安装 ScrewM6-Mountingaccordingtovalidapplicationnote 螺丝 M6 根据相应的应用手册进行安装 ScrewM6-Mountingaccordingtovalidapplicationnote M 3, - 6, Nm M 2,5-5, Nm G 34 g 3
输出特性 IGBT, 逆变器 ( 典型 ) outputcharacteristicigbt,inverter(typical) IC=f(VCE) VGE=5V 输出特性 IGBT, 逆变器 ( 典型 ) outputcharacteristicigbt,inverter(typical) IC=f(VCE) Tvj=25 C VGE = 2V VGE = 5V VGE = 2V VGE = V VGE = 9V VGE = 8V IC [] IC [],,5,,5 2, 2,5 3, 3,5 4, VCE [V],,5,,5 2, 2,5 3, 3,5 4, 4,5 5, VCE [V] 传输特性 IGBT, 逆变器 ( 典型 ) transfercharacteristicigbt,inverter(typical) IC=f(VGE) VCE=2V 开关损耗 IGBT, 逆变器 ( 典型 ) switchinglossesigbt,inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=±5V,RGon=4.7Ω,RGoff=4.7Ω,VCE=9V 35 Eon, Eoff, 25 IC [] E [] 5 5 5 6 7 8 9 2 3 VGE [V] IC [] 4
开关损耗 IGBT, 逆变器 ( 典型 ) switchinglossesigbt,inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=±5V,IC=,VCE=9V 瞬态热阻抗 IGBT, 逆变器 transientthermalimpedanceigbt,inverter ZthJC=f(t) 55 Eon, Eoff, ZthJC : IGBT 45, E [] 35 25 ZthJC [K/W], 5 5 5 5 2 25 3 35 4 45 5 RG [Ω] i: ri[k/w]: τi[s]:,85, 2,255,4 3,34,6 4,7,3,,,, t [s] 反偏安全工作区 IGBT, 逆变器 (RBSO) reversebiassafeoperatingareaigbt,inverter(rbso) IC=f(VCE) VGE=±5V,RGoff=4.7Ω,Tvj=25 C 正向偏压特性 二极管, 逆变器 ( 典型 ) forwardcharacteristicofdiode,inverter(typical) IF=f(VF) 7 IC, Modul IC, Chip IC [] IF [] 8 8 VCE [V],,5,,5 2, 2,5 3, VF [V] 5
开关损耗 二极管, 逆变器 ( 典型 ) switchinglossesdiode,inverter(typical) Erec=f(IF) RGon=4.7Ω,VCE=9V 开关损耗 二极管, 逆变器 ( 典型 ) switchinglossesdiode,inverter(typical) Erec=f(RG) IF=,VCE=9V 9 Erec, 9 Erec, 8 8 7 7 6 6 E [] 5 E [] 5 4 4 3 3 2 2 IF [] 5 5 2 25 3 35 4 45 5 RG [Ω] 瞬态热阻抗 二极管, 逆变器 transientthermalimpedancediode,inverter ZthJC=f(t) ZthJC : Diode, ZthJC [K/W], i: ri[k/w]: τi[s]:,3, 2,39,4 3,52,6 4,26,3,,,, t [s] 6
接线图 /circuit_diagram_headline 封装尺寸 /packageoutlines j n j n i i 7
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