IGBT, 逆变器 /IGBT,Inverter 最大额定值 /MaximumRatedValues 集电极 - 发射极电压 Collector-emittervoltage 连续集电极直流电流 ContinuousDCcollectorcurrent 集电极重复峰值电流 Repetitivepeakcollectorcurrent 总功率损耗 Totalpowerdissipation 栅极 - 发射极峰值电压 Gate-emitterpeakvoltage VCES V TC = C, Tvj max = C TC = 25 C, Tvj max = C IC nom tp = ms ICRM TC = 25 C, Tvj max = Ptot W VGES +/- V 集电极 - 发射极饱和电压 Collector-emittersaturationvoltage 栅极阈值电压 Gatethresholdvoltage 栅极电荷 Gatecharge 内部栅极电阻 Internalgateresistor 输入电容 Inputcapacitance 反向传输电容 Reversetransfercapacitance 集电极 - 发射极截止电流 Collector-emittercut-offcurrent 栅极 - 发射极漏电流 Gate-emitterleakagecurrent 开通延迟时间 ( 电感负载 ) Turn-ondelaytime,inductiveload IC =, VGE = 5 V IC =, VGE = 5 V IC VCE sat 55, 2,5 2, V V IC =, m, VCE = VGE, VGEth 5, 5,8 6,5 V VGE = -5 V... +5 V QG,33 µc RGint 6, Ω f = MHz,, VCE = 25 V, VGE = V Cies 2, nf f = MHz,, VCE = 25 V, VGE = V Cres nf VCE = V, VGE = V, ICES 5, m VCE = V, VGE = V, IGES n IC =, VCE = V td on 上升时间 ( 电感负载 ) Risetime,inductiveload IC =, VCE = V tr,3,5 关断延迟时间 ( 电感负载 ) Turn-offdelaytime,inductiveload IC =, VCE = V td off,42,52 下降时间 ( 电感负载 ) Falltime,inductiveload IC =, VCE = V tf,7 开通损耗能量 ( 每脉冲 ) Turn-onenergylossperpulse IC =, VCE = V, LS = 45 nh Eon 4, 6, 关断损耗能量 ( 每脉冲 ) Turn-offenergylossperpulse IC =, VCE = V, LS = 45 nh Eoff 3, 3, 短路数据 SCdata 结 - 外壳热阻 Thermalresistance,junctiontocase 在开关状态下温度 Temperatureunderswitchingconditions VGE 5 V, VCC = 9 V VCEmax = VCES -LsCE di/dt tp, 每个 IGBT/perIGBT RthJC, K/W Tvj op - 25 C ISC preparedby:s
二极管, 逆变器 /Diode,Inverter 最大额定值 /MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent I2t- 值 I²t-value VRRM V IF tp = ms IFRM VR = V, tp = ms, I²t 3 ²s 正向电压 Forwardvoltage 反向恢复峰值电流 Peakreverserecoverycurrent IF =, VGE = V IF =, VGE = V IF =, - dif/dt = 9 / (Tvj=25 C) VR = V VGE = -5 V VF IRM,75,75 39, 38, 2, V V 恢复电荷 Recoveredcharge IF =, - dif/dt = 9 / (Tvj=25 C) VR = V VGE = -5 V Qr 4, 7, µc µc 反向恢复损耗 ( 每脉冲 ) Reverserecoveryenergy IF =, - dif/dt = 9 / (Tvj=25 C) VR = V VGE = -5 V Erec,35 2, 结 - 外壳热阻 Thermalresistance,junctiontocase 在开关状态下温度 Temperatureunderswitchingconditions 每个二极管 /perdiode RthJC,95 K/W Tvj op - 25 C 二极管, 整流器 /Diode,Rectifier 最大额定值 /MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage 最大正向均方根电流 ( 每芯片 ) MaximumRMSforwardcurrentperchip 最大整流器输出均方根电流 MaximumRMScurrentatrectifieroutput 正向浪涌电流 Surgeforwardcurrent I2t- 值 I²t-value VRRM V TC = C IFRMSM TC = C IRMSM 75 tp = ms, tp = ms, Tvj = C tp = ms, tp = ms, Tvj = C 正向电压 Forwardvoltage 反向电流 Reversecurrent 结 - 外壳热阻 Thermalresistance,junctiontocase 在开关状态下温度 Temperatureunderswitchingconditions IFSM I²t 35 2 3 Tvj = C, IF = VF, V ²s ²s Tvj = C, VR = V IR 2, m 每个二极管 /perdiode RthJC, K/W Tvj op C preparedby:s 2
IGBT, 制动 - 斩波器 /IGBT,Brake-Chopper 最大额定值 /MaximumRatedValues 集电极 - 发射极电压 Collector-emittervoltage 连续集电极直流电流 ContinuousDCcollectorcurrent 集电极重复峰值电流 Repetitivepeakcollectorcurrent 总功率损耗 Totalpowerdissipation 栅极 - 发射极峰值电压 Gate-emitterpeakvoltage VCES V TC = C, Tvj max = C TC = 25 C, Tvj max = C IC nom tp = ms ICRM TC = 25 C, Tvj max = Ptot W VGES +/- V 集电极 - 发射极饱和电压 Collector-emittersaturationvoltage 栅极阈值电压 Gatethresholdvoltage 栅极电荷 Gatecharge 内部栅极电阻 Internalgateresistor 输入电容 Inputcapacitance 反向传输电容 Reversetransfercapacitance 集电极 - 发射极截止电流 Collector-emittercut-offcurrent 栅极 - 发射极漏电流 Gate-emitterleakagecurrent 开通延迟时间 ( 电感负载 ) Turn-ondelaytime,inductiveload IC =, VGE = 5 V IC =, VGE = 5 V IC VCE sat 55, 2,5 2, V V IC =, m, VCE = VGE, VGEth 5, 5,8 6,5 V VGE = -5 V... +5 V QG,33 µc RGint 6, Ω f = MHz,, VCE = 25 V, VGE = V Cies 2, nf f = MHz,, VCE = 25 V, VGE = V Cres nf VCE = V, VGE = V, ICES 5, m VCE = V, VGE = V, IGES n IC =, VCE = V td on 上升时间 ( 电感负载 ) Risetime,inductiveload IC =, VCE = V tr,3,5 关断延迟时间 ( 电感负载 ) Turn-offdelaytime,inductiveload IC =, VCE = V td off,42,52 下降时间 ( 电感负载 ) Falltime,inductiveload IC =, VCE = V tf,7 开通损耗能量 ( 每脉冲 ) Turn-onenergylossperpulse IC =, VCE = V, LS = t.b.d. nh Eon 4, 6, 关断损耗能量 ( 每脉冲 ) Turn-offenergylossperpulse IC =, VCE = V, LS = t.b.d. nh Eoff 3, 3, 短路数据 SCdata 结 - 外壳热阻 Thermalresistance,junctiontocase 在开关状态下温度 Temperatureunderswitchingconditions VGE 5 V, VCC = 9 V VCEmax = VCES -LsCE di/dt tp, 每个 IGBT/perIGBT RthJC, K/W Tvj op - 25 C ISC preparedby:s 3
二极管, 制动 - 斩波器 /Diode,Brake-Chopper 最大额定值 /MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent I2t- 值 I²t-value VRRM V IF 5 tp = ms IFRM VR = V, tp = ms, I²t, ²s 正向电压 Forwardvoltage 反向恢复峰值电流 Peakreverserecoverycurrent IF = 5, VGE = V IF = 5, VGE = V IF = 5, - dif/dt = / (Tvj=25 C) VR = V IRM VF,65,65 6, 5, 2, V V 恢复电荷 Recoveredcharge IF = 5, - dif/dt = / (Tvj=25 C) VR = V Qr, 3, µc µc 反向恢复损耗 ( 每脉冲 ) Reverserecoveryenergy IF = 5, - dif/dt = / (Tvj=25 C) VR = V Erec,55, 结 - 外壳热阻 Thermalresistance,junctiontocase 在开关状态下温度 Temperatureunderswitchingconditions 每个二极管 /perdiode RthJC, K/W Tvj op - 25 C 负温度系数热敏电阻 /NTC-Thermistor 额定电阻值 Ratedresistance R 偏差 DeviationofR 耗散功率 Powerdissipation B- 值 B-value B- 值 B-value B- 值 B-value 根据应用手册标定 Specificationaccordingtothevalidapplicationnote. TC = 25 C R25 5, kω TC = C, R = 493 Ω R/R -5 5 % TC = 25 C P25, mw R2 = R25 exp [B25/(/T2 - /(298,5 K))] B25/ 3375 K R2 = R25 exp [B25/(/T2 - /(298,5 K))] B25/ t.b.d. K R2 = R25 exp [B25/(/T2 - /(298,5 K))] B25/ t.b.d. K preparedby:s 4
模块 /Module 绝缘测试电压 Isolationtestvoltage 模块基板材料 Materialofmodulebaseplate 内部绝缘 Internalisolation 爬电距离 Creepagedistance 电气间隙 Clearance 相对电痕指数 Comperativetrackingindex 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 杂散电感, 模块 Strayinductancemodule 模块引线电阻, 端子 - 芯片 Moduleleadresistance,terminals-chip 储存温度 Storagetemperature 模块安装的安装扭距 Mountingtorqueformodulmounting 重量 Weight RMS, f = Hz, t = min VISOL 2,5 kv Cu 基本绝缘 (class,iec6) basicinsulation(class,iec6) 端子 - 散热片 /terminaltoheatsink 端子 - 端子 /terminaltoterminal 端子 - 散热片 /terminaltoheatsink 端子 - 端子 /terminaltoterminal I3 CTI > 225 每个模块 /permodule λpaste=w/(m K)/λgrease=W/(m K), 7,5 min. typ. max. mm mm RthCH,9 K/W LsCE nh TC=25 C, 每个开关 /perswitch RCC'+EE' R'+CC' 4, 2, Tstg - 25 C 螺丝 M5 根据相应的应用手册进行安装 ScrewM5-Mountingaccordingtovalidapplicationnote mω M 3, - 6, Nm G g preparedby:s 5
输出特性 IGBT, 逆变器 ( 典型 ) outputcharacteristicigbt,inverter(typical) IC=f(VCE) VGE=5V 输出特性 IGBT, 逆变器 ( 典型 ) outputcharacteristicigbt,inverter(typical) IC=f(VCE) Tvj=25 C VGE = 9V VGE = 7V VGE = 5V VGE = 3V VGE = V VGE = 9V IC [] IC [],,5,,5 2, 2,5 3, 3,5 VCE [V],,5,,5 2, 2,5 3, 3,5 4, 4,5 5, VCE [V] 传输特性 IGBT, 逆变器 ( 典型 ) transfercharacteristicigbt,inverter(typical) IC=f(VGE) VCE=V 开关损耗 IGBT, 逆变器 ( 典型 ) switchinglossesigbt,inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=±5V,RGon=27Ω,RGoff=27Ω,VCE=V 6 4 Eon, Eoff, 2 IC [] E [] 8 6 4 2 5 6 7 8 9 2 VGE [V] IC [] preparedby:s 6
开关损耗 IGBT, 逆变器 ( 典型 ) switchinglossesigbt,inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=±5V,IC=,VCE=V 瞬态热阻抗 IGBT, 逆变器 transientthermalimpedanceigbt,inverter ZthJC=f(t) 9 Eon, Eoff, ZthJC : IGBT 8 7 6 E [] 5 4 ZthJC [K/W], 3 2 RG [Ω] i: ri[k/w]: τi[s]:,6769,2345 2,29,28 3,523,28 4,52,282,,,, t [s] 反偏安全工作区 IGBT, 逆变器 (RBSO) reversebiassafeoperatingareaigbt,inverter(rbso) IC=f(VCE) VGE=±5V,RGoff=27Ω,Tvj=25 C 正向偏压特性 二极管, 逆变器 ( 典型 ) forwardcharacteristicofdiode,inverter(typical) IF=f(VF) 9 IC, Modul IC, Chip IC [] IF [] VCE [V],,5,,5 2, 2,5 3, VF [V] preparedby:s 7
开关损耗 二极管, 逆变器 ( 典型 ) switchinglossesdiode,inverter(typical) Erec=f(IF) RGon=27Ω,VCE=V 开关损耗 二极管, 逆变器 ( 典型 ) switchinglossesdiode,inverter(typical) Erec=f(RG) IF=,VCE=V 4, Erec, 4, Erec, 3,5 3,5 3, 3, 2,5 2,5 E [] 2, E [] 2,,5,5,,,5,5, IF [], RG [Ω] 瞬态热阻抗 二极管, 逆变器 transientthermalimpedancediode,inverter ZthJC=f(t) 正向偏压特性 二极管, 整流器 ( 典型 ) forwardcharacteristicofdiode,rectifier(typical) IF=f(VF) ZthJC : Diode Tvj = C ZthJC [K/W], IF [] i: ri[k/w]: τi[s]: 674,3333 2,6249,3429 3,8,294 4,5,7662,,,, t [s],,2,4,6,8,,2,4,6,8 VF [V] preparedby:s 8
输出特性 IGBT, 制动 - 斩波器 ( 典型 ) outputcharacteristicigbt,brake-chopper(typical) IC=f(VCE) VGE=5V 正向偏压特性 二极管, 制动 - 斩波器 ( 典型 ) forwardcharacteristicofdiode,brake-chopper(typical) IF=f(VF) IC [] IF [],,5,,5 2, 2,5 3, 3,5 VCE [V],,5,,5 2, 2,5 3, 3,5 4, VF [V] 负温度系数热敏电阻 温度特性 NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) Rtyp R[Ω] TC [ C] preparedby:s 9
接线图 /circuit_diagram_headline 封装尺寸 /packageoutlines Infineon preparedby:s
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