EconoDUL 3 模块 采用第三代沟槽栅 / 场终止 IGBT3 和第三代发射极控制二极管 带有温度检测 NTC EconoDUL 3modulewithTrench/FieldstopIGBT3andEmitterControlled3diodeandNTC VCES = V IC nom = / ICRM = 典型应用 Typicalpplications 大功率变流器 HighPowerConverters 电机传动 MotorDrives 伺服驱动器 ServoDrives UPS 系统 UPSSystems 风力发电机 WindTurbines 电气特性 ElectricalFeatures 沟槽栅 IGBT3 TrenchIGBT3 Tvjop=5 C Tvjop=5 C VCEsat 带正温度系数 VCEsatwithpositiveTemperatureCoefficient 机械特性 MechanicalFeatures 高功率密度 HighPowerDensity 绝缘的基板 IsolatedBasePlate 标封装 StandardHousing ModuleLabelCode BarcodeCode8 DMX-Code ContentoftheCode ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) Digit -5 6- -9 - -3 ULapproved(E83335)
IGBT, 逆变器 /IGBT,Inverter 最大额定值 /MaximumRatedValues 集电极 - 发射极电压 Collector-emittervoltage 连续集电极直流电流 ContinuousDCcollectorcurrent 集电极重复峰值电流 Repetitivepeakcollectorcurrent 总功率损耗 Totalpowerdissipation 栅极 - 发射极峰值电压 Gate-emitterpeakvoltage VCES V TC = 5 C, Tvj max = 75 C TC = 5 C, Tvj max = 75 C IC nom IC 55 tp = ms ICRM TC = 5 C, Tvj max = 75 Ptot 5 W VGES +/- V 特征值 /CharacteristicValues min. typ. max. 集电极 - 发射极饱和电压 Collector-emittersaturationvoltage 栅极阈值电压 Gatethresholdvoltage 栅极电荷 Gatecharge 内部栅极电阻 Internalgateresistor 输入电容 Inputcapacitance 反向传输电容 Reversetransfercapacitance 集电极 - 发射极截止电流 Collector-emittercut-offcurrent 栅极 - 发射极漏电流 Gate-emitterleakagecurrent 开通延迟时间 ( 电感负载 ) Turn-ondelaytime,inductiveload 上升时间 ( 电感负载 ) Risetime,inductiveload 关断延迟时间 ( 电感负载 ) Turn-offdelaytime,inductiveload 下降时间 ( 电感负载 ) Falltime,inductiveload 开通损耗能量 ( 每脉冲 ) Turn-onenergylossperpulse 关断损耗能量 ( 每脉冲 ) Turn-offenergylossperpulse 短路数据 SCdata 结 - 外壳热阻 Thermalresistance,junctiontocase 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 在开关状态下温度 Temperatureunderswitchingconditions IC =, VGE = 5 V IC =, VGE = 5 V IC =, VGE = 5 V Tvj = 5 C VCE sat,5,6,7,9 V V V IC = 7, m, VCE = VGE, VGEth,9 5,8 6,5 V VGE = -5 V... +5 V QG,8 µc RGint,67 Ω f = MHz,, VCE = 5 V, VGE = V Cies 8, nf f = MHz,, VCE = 5 V, VGE = V Cres,85 nf VCE = V, VGE = V, ICES 5, m VCE = V, VGE = V, IGES n IC =, VCE = V VGE = ±5 V RGon =,5 Ω IC =, VCE = V VGE = ±5 V RGon =,5 Ω IC =, VCE = V VGE = ±5 V RGoff =,5 Ω IC =, VCE = V VGE = ±5 V RGoff =,5 Ω Tvj = 5 C Tvj = 5 C Tvj = 5 C Tvj = 5 C IC =, VCE = V, LS = 3 nh VGE = ±5 V, di/dt = 5 / (Tvj = 5 C) RGon =,5 Ω Tvj = 5 C IC =, VCE = V, LS = 3 nh VGE = ±5 V, du/dt = V/ (Tvj = 5 C) RGoff =,5 Ω Tvj = 5 C VGE 5 V, VCC = 36 V VCEmax = VCES -LsCE di/dt tp 8, tp 6, Tvj = 5 C td on tr td off tf Eon Eoff ISC,75,8,85,65,7,75,7,5,5,7,95,,95 6,3 6,9 5, 7,5 8,5 每个 IGBT/perIGBT RthJC, K/W 每个 IGBT/perIGBT λpaste=w/(m K)/λgrease=W/(m K) RthCH,3 K/W Tvj op - 5 C
二极管, 逆变器 /Diode,Inverter 最大额定值 /MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage 连续正向直流电流 ContinuousDCforwardcurrent 正向重复峰值电流 Repetitivepeakforwardcurrent It- 值 I²t-value VRRM V IF tp = ms IFRM VR = V, tp = ms, VR = V, tp = ms, Tvj = 5 C I²t 5 特征值 /CharacteristicValues min. typ. max. 正向电压 Forwardvoltage 反向恢复峰值电流 Peakreverserecoverycurrent 恢复电荷 Recoveredcharge 反向恢复损耗 ( 每脉冲 ) Reverserecoveryenergy 结 - 外壳热阻 Thermalresistance,junctiontocase 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 在开关状态下温度 Temperatureunderswitchingconditions IF =, VGE = V IF =, VGE = V IF =, VGE = V IF =, - dif/dt = 5 / (Tvj=5 C) VR = V VGE = -5 V IF =, - dif/dt = 5 / (Tvj=5 C) VR = V VGE = -5 V IF =, - dif/dt = 5 / (Tvj=5 C) VR = V VGE = -5 V Tvj = 5 C Tvj = 5 C Tvj = 5 C Tvj = 5 C VF IRM Qr Erec,55,5,5 3 9 3 6,5 3, 35, 3,75 7,5 9, ²s ²s,95 V V V 每个二极管 /perdiode RthJC, K/W 每个二极管 /perdiode λpaste=w/(m K)/λgrease=W/(m K) µc µc µc RthCH,6 K/W Tvj op - 5 C 负温度系数热敏电阻 /NTC-Thermistor 特征值 /CharacteristicValues min. typ. max. 额定电阻值 Ratedresistance R 偏差 DeviationofR 耗散功率 Powerdissipation B- 值 B-value B- 值 B-value B- 值 B-value 根据应用手册标定 Specificationaccordingtothevalidapplicationnote. TC = 5 C R5 5, kω TC = C, R = 93 Ω R/R -5 5 % TC = 5 C P5, mw R = R5 exp [B5/5(/T - /(98,5 K))] B5/5 3375 K R = R5 exp [B5/8(/T - /(98,5 K))] B5/8 3 K R = R5 exp [B5/(/T - /(98,5 K))] B5/ 333 K 3
模块 /Module 绝缘测试电压 Isolationtestvoltage 模块基板材料 Materialofmodulebaseplate 内部绝缘 Internalisolation 爬电距离 Creepagedistance 电气间隙 Clearance 相对电痕指数 Comperativetrackingindex 外壳 - 散热器热阻 Thermalresistance,casetoheatsink 杂散电感, 模块 Strayinductancemodule 模块引线电阻, 端子 - 芯片 Moduleleadresistance,terminals-chip 储存温度 Storagetemperature 模块安装的安装扭距 Mountingtorqueformodulmounting 端子联接扭距 Terminalconnectiontorque 重量 Weight RMS, f = 5 Hz, t = min. VISOL,5 kv Cu 基本绝缘 (class,iec6) basicinsulation(class,iec6) 端子 - 散热片 /terminaltoheatsink 端子 - 端子 /terminaltoterminal 端子 - 散热片 /terminaltoheatsink 端子 - 端子 /terminaltoterminal lo3,5 3,,5, CTI > 每个模块 /permodule λpaste=w/(m K)/λgrease=W/(m K) min. typ. max. mm mm RthCH,9 K/W LsCE nh TC=5 C, 每个开关 /perswitch RCC'+EE', mω Tstg - 5 C 螺丝 M5 根据相应的应用手册进行安装 ScrewM5-Mountingaccordingtovalidapplicationnote 螺丝 M6 根据相应的应用手册进行安装 ScrewM6-Mountingaccordingtovalidapplicationnote M 3, - 6, Nm M 3, - 6, Nm G 35 g Eon, Eoff, Erec Messungen mit Vce-clamping und zusätzlichem Snubber-Kondensator Eon, Eoff, Erec measurements with Vce-clamping and additional snubber-condensator
输出特性 IGBT, 逆变器 ( 典型 ) outputcharacteristicigbt,inverter(typical) IC=f(VCE) VGE=5V 输出特性 IGBT, 逆变器 ( 典型 ) outputcharacteristicigbt,inverter(typical) IC=f(VCE) Tvj=5 C 75 Tvj = 5 C 75 VGE = 9V VGE = 7V VGE = 5V VGE = 3V VGE = V VGE = 9V IC [] IC [] 5 5,,,8,,6,,,8 VCE [V],,5,,5,,5 3, 3,5,,5 5, VCE [V] 传输特性 IGBT, 逆变器 ( 典型 ) transfercharacteristicigbt,inverter(typical) IC=f(VGE) VCE=V 开关损耗 IGBT, 逆变器 ( 典型 ) switchinglossesigbt,inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=±5V,RGon=.5Ω,RGoff=.5Ω,VCE=V 75 Tvj = 5 C 5 Eon, Eoff, Eon, Tvj = 5 C Eoff, Tvj = 5 C 3 IC [] E [] 5 5 6 7 8 9 VGE [V] 5 75 IC [] 5
开关损耗 IGBT, 逆变器 ( 典型 ) switchinglossesigbt,inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=±5V,IC=,VCE=V 瞬态热阻抗 IGBT, 逆变器 transientthermalimpedanceigbt,inverter ZthJC=f(t) Eon, Eoff, Eon, Tvj = 5 C Eoff, Tvj = 5 C ZthJC : IGBT 8, E [] 6 ZthJC [K/W], 6 8 6 RG [Ω] i: ri[k/w]: τi[s]:,7,,396, 3,38,5,38,,,,, t [s] 反偏安全工作区 IGBT, 逆变器 (RBSO) reversebiassafeoperatingareaigbt,inverter(rbso) IC=f(VCE) VGE=±5V,RGoff=.5Ω,Tvj=5 C 正向偏压特性 二极管, 逆变器 ( 典型 ) forwardcharacteristicofdiode,inverter(typical) IF=f(VF) 8 IC, Modul IC, Chip 75 Tvj = 5 C 7 IC [] 5 IF [] 5 5 7 VCE [V],,,,6,8,,,,6,8, VF [V] 6
开关损耗 二极管, 逆变器 ( 典型 ) switchinglossesdiode,inverter(typical) Erec=f(IF) RGon=.5Ω,VCE=V 开关损耗 二极管, 逆变器 ( 典型 ) switchinglossesdiode,inverter(typical) Erec=f(RG) IF=,VCE=V Erec, Erec, Tvj = 5 C Erec, Erec, Tvj = 5 C 8 8 E [] 6 E [] 6 5 75 IF [] 6 8 6 RG [Ω] 瞬态热阻抗 二极管, 逆变器 transientthermalimpedancediode,inverter ZthJC=f(t) 负温度系数热敏电阻 温度特性 NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) ZthJC : Diode Rtyp, ZthJC [K/W] R[Ω], i: ri[k/w]: τi[s]:,3,,76, 3,7,5,638,,,,, t [s] 6 8 6 TC [ C] 7
接线图 /circuit_diagram_headline 封装尺寸 /packageoutlines Infineon 8
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